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1. 发明申请

US20190206676A1 METHOD AND DEVICE FOR REDUCING CONTAMINATION FOR RELIABLE BOND PADS 审中-公开
公开(公告)号：US20190206676A1
公开(公告)日：2019-07-04
申请号：US15857546
申请日：2017-12-28
申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.
发明人： Honghui MOU , Xiaodong LI , Yun Ling TAN , Alex SEE , Liang LI
IPC分类号： H01L21/02
CPC分类号： H01L21/02049 , H01L21/02054 , H01L21/0209 , H01L2021/60045
摘要： The present disclosure generally relates to methods for cleaning the backside of a wafer. A wet cleaning method may be used by stripping off the uppermost spacer layers on the backside of the wafer using a cleaning solution. In one embodiment, hydrogen fluoride (HF) solution may be employed to remove the nitride/oxide spacer layer. In another embodiment, a dry cleaning method may be employed to etch the wafer at the bevel region. Residues are completely removed from the wafer backside. This method improves the yield and storage life of the semiconductor wafers.

2. 发明申请

US20170200618A1 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM 审中-公开
公开(公告)号：US20170200618A1
公开(公告)日：2017-07-13
申请号：US15402419
申请日：2017-01-10
申请人： TOKYO ELECTRON LIMITED
发明人： Keiko HADA , Akitaka SHIMIZU , Koichi NAGAKURA , Mitsuhiro TACHIBANA
IPC分类号： H01L21/311 , H01L21/67 , H01J37/32
CPC分类号： H01L21/31116 , H01J37/32009 , H01J37/3244 , H01L21/02049 , H01L21/67069
摘要： There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

3. 发明申请

US20170084456A1 CLEANING METHOD 有权
公开(公告)号：US20170084456A1
公开(公告)日：2017-03-23
申请号：US15259489
申请日：2016-09-08
申请人： Applied Materials, Inc.
发明人： Christopher S. OLSEN , Peter STONE , Teng-fang KUO , Ping Han HSIEH , Manoj VELLAIKAL
IPC分类号： H01L21/02 , H01L21/67 , H01L21/3065
CPC分类号： H01L21/02658 , H01J2237/334 , H01L21/02046 , H01L21/02049 , H01L21/02052 , H01L21/0206 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/0262 , H01L21/3065 , H01L21/67167 , H01L21/67184 , H01L21/6719 , H01L21/68742
摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

4. 发明申请

US20160343565A1 SUBSTRATE CLEANING METHOD FOR REMOVING OXIDE FILM 审中-公开
标题翻译：用于去除氧化膜的基板清洁方法
公开(公告)号：US20160343565A1
公开(公告)日：2016-11-24
申请号：US15161892
申请日：2016-05-23
申请人： CANON ANELVA CORPORATION
发明人： Takuya SEINO , Manabu IKEMOTO , Kimiko MASHIMO
IPC分类号： H01L21/02 , H01L21/67 , H01L21/28
CPC分类号： H01L21/02049 , H01J37/32091 , H01J37/3244 , H01L21/02381 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02658 , H01L21/28194 , H01L21/28202 , H01L21/67196 , H01L29/4916 , H01L29/495 , H01L29/4966 , H01L29/4975 , H01L29/517 , H01L29/66651
摘要： It was found out that when radicals generated by plasma are fed to a treatment chamber via a plurality of holes (111) formed on a partition plate which separates a plasma-forming chamber (108) from the treatment chamber, and the radicals are mixed with a treatment gas which is separately fed to the treatment chamber, the excitation energy of the radicals is suppressed and thereby the substrate surface treatment at high Si-selectivity becomes possible, which makes it possible to conduct the surface treatment of removing native oxide film and organic matter without deteriorating the flatness of the substrate surface. The radicals in the plasma are fed to the treatment chamber via radical-passing holes (111) of a plasma-confinement electrode plate (110) for plasma separation, the treatment gas is fed to the treatment chamber (121) to be mixed with the radicals in the treatment chamber, and then the substrate surface is cleaned by the mixed atmosphere of the radicals and the treatment gas.
摘要翻译：已经发现，当通过等离子体形成室（108）与处理室分离的分隔板上形成的多个孔（111）将由等离子体产生的自由基供给到处理室时，将自由基与单独供给到处理室的处理气体被抑制，自由基的激发能被抑制，从而可以在高Si选择性下进行基板表面处理，这使得可以进行去除自然氧化膜和有机物的表面处理而不会降低基板表面的平坦度。通过用于等离子体分离的等离子体约束电极板（110）的自由基通过孔（111）将等离子体中的自由基供给到处理室，将处理气体供给到处理室（121）以与处理室中的自由基，然后通过自由基和处理气体的混合气氛清洁基板表面。

5. 发明申请

US20160298235A1 SUBSTRATE PROCESSING APPARATUS AND GUIDE PORTION 审中-公开
标题翻译：基板加工设备和导向部分
公开(公告)号：US20160298235A1
公开(公告)日：2016-10-13
申请号：US15191151
申请日：2016-06-23
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Masato TERASAKI , Naonori AKAE , Hideki HORITA
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/4405 , B08B3/00 , B08B3/02 , B08B3/04 , B08B5/00 , B08B5/02 , B08B7/00 , B08B9/00 , B08B9/02 , B08B9/023 , B08B9/027 , B08B9/04 , C23C16/45523 , C23C16/45525 , C23C16/45561 , H01J37/32862 , H01L21/02049 , H01L21/02164 , H01L21/02211 , H01L21/0228
摘要： A cleaning method includes (a) providing a process chamber after forming an oxide film on a substrate in the process chamber formed by a reaction tube and a manifold supporting the reaction tube by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate through a first nozzle in the manifold extending upward to an inside of the reaction tube, and supplying an oxidizing gas to the substrate through a second nozzle in the manifold extending upward to the inside of the reaction tube; and (b) cleaning an inside of the process chamber. The step (b) includes a first cleaning process of supplying a hydrogen fluoride gas into the reaction tube through the second nozzle; and a second cleaning process of supplying a hydrogen fluoride gas onto an inner wall surface of the manifold through a third nozzle disposed in the manifold.
摘要翻译：清洁方法包括（a）在由反应管和支撑反应管的歧管形成的处理室中的基板上形成氧化膜之后，通过执行预定次数的循环来提供处理室，该循环包括供给通过歧管中的第一喷嘴将气体引导到基板，向上延伸到反应管的内部，并且通过歧管中的第二喷嘴向基板提供氧化气体，向上延伸到反应管的内部; 和（b）清洁处理室的内部。步骤（b）包括通过第二喷嘴将氟化氢气体供应到反应管中的第一清洗过程; 以及通过设置在歧管中的第三喷嘴将氟化氢气体供给到歧管的内壁表面上的第二清洗过程。

6. 发明申请

US20160211140A1 Method for Processing a Semiconductor Surface 审中-公开
标题翻译：半导体表面处理方法
公开(公告)号：US20160211140A1
公开(公告)日：2016-07-21
申请号：US14997221
申请日：2016-01-15
申请人： Infineon Technologies AG
发明人： Jens Peter Konrath , Ronny Kern , Stefan Krivec , Ulrich Schmid , Laura Stoeber
IPC分类号： H01L21/285 , H01L21/265 , H01L29/47
CPC分类号： H01L21/28537 , H01L21/02046 , H01L21/02049 , H01L21/0455 , H01L21/0495 , H01L21/2236 , H01L21/2652 , H01L21/67115 , H01L29/1608 , H01L29/167 , H01L29/36 , H01L29/365 , H01L29/401 , H01L29/47 , H01L29/6606 , H01L29/66143 , H01L29/66848 , H01L29/872
摘要： A method for processing a semiconductor includes irradiating a surface of a semiconductor with ions of a first gas type for cleaning the surface and implanting of ions of a second gas type in a region below the surface of the semiconductor for creating defects in the region below the surface. The irradiating and the implanting are performed within the same chamber.
摘要翻译：一种用于处理半导体的方法包括用半导体的表面照射用于清洁表面的第一气体类型的离子和将第二气体类型的离子注入到半导体表面下方的区域中，用于在低于该半导体区域的区域内产生缺陷表面。照射和植入在相同的室内进行。

7. 发明授权

US09299557B2 Plasma pre-clean module and process 有权
公开(公告)号：US09299557B2
公开(公告)日：2016-03-29
申请号：US14220001
申请日：2014-03-19
申请人： ASM IP HOLDING B.V.
发明人： John Tolle , Matthew G. Goodman , Robert Michael Vyne , Eric R. Hill
IPC分类号： H01L21/02 , H01L21/3205 , H01L21/324 , H01L21/311
CPC分类号： H01L21/02049 , B08B5/00 , B08B7/0014 , B08B7/0071 , C30B23/025 , C30B25/186 , C30B29/06 , H01L21/02046 , H01L21/02068 , H01L21/0217 , H01L21/02301 , H01L21/02348 , H01L21/02532 , H01L21/02598 , H01L21/02636 , H01L21/02661 , H01L21/31116 , H01L21/3205 , H01L21/324
摘要： A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber.

8. 发明申请

US20150270122A1 PLASMA PRE-CLEAN MODULE AND PROCESS 有权
标题翻译：等离子体预清洁模块和过程
公开(公告)号：US20150270122A1
公开(公告)日：2015-09-24
申请号：US14220001
申请日：2014-03-19
申请人： ASM IP Holding B.V.
发明人： John Tolle , Matthew G. Goodman , Robert Michael Vyne , Eric R. Hill
IPC分类号： H01L21/02 , H01L21/3205 , H01L21/324
CPC分类号： H01L21/02049 , B08B5/00 , B08B7/0014 , B08B7/0071 , C30B23/025 , C30B25/186 , C30B29/06 , H01L21/02046 , H01L21/02068 , H01L21/0217 , H01L21/02301 , H01L21/02348 , H01L21/02532 , H01L21/02598 , H01L21/02636 , H01L21/02661 , H01L21/31116 , H01L21/3205 , H01L21/324
摘要： A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber.
摘要翻译：用于集成电路制造的方法可以包括通过预清洁工艺去除氧化硅。预清洁方法可以包括在第一反应室中在基材的表面上沉积含卤素的材料，并将具有含卤素材料的基材转移到第二反应室。氧化硅材料可以通过升华第二反应室中的含卤物质从基板的表面去除。诸如导电材料的目标材料随后可以沉积在第二反应室中的基板表面上。

9. 发明申请

US20140360979A1 DRY NON-PLASMA TREATMENT SYSTEM AND METHOD OF USING 有权
标题翻译：干非等离子体处理系统及其使用方法
公开(公告)号：US20140360979A1
公开(公告)日：2014-12-11
申请号：US14466146
申请日：2014-08-22
申请人： Tokyo Electron Limited
发明人： Martin Kent , Eric J. Strang
IPC分类号： C23F1/02 , C09K13/08 , C01B7/19 , C23F1/12
CPC分类号： B05B12/12 , B05B12/04 , B05B13/02 , C01B7/191 , C09K13/08 , C23F1/02 , C23F1/12 , H01L21/02049 , H01L21/0337 , H01L21/0338 , H01L21/30621 , H01L21/31116 , H01L21/67069 , H01L21/67109 , H01L21/67248 , H01L21/68742
摘要： A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.
摘要翻译：描述了干燥的非等离子体处理系统和用于去除氧化物材料的方法。处理系统被配置为提供一个或多个基底的化学处理，其中每个基底在受控条件下暴露于气态化学物质，包括表面温度和气体压力。此外，处理系统被配置为提供每个基板的热处理，其中每个基板被热处理以去除每个基板上的经化学处理的表面。

10. 发明申请

US20140148014A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20140148014A1
公开(公告)日：2014-05-29
申请号：US14082823
申请日：2013-11-18
申请人： KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
发明人： ShinJae You , Jung-Hyung Kim , Yong-Hyung Shin , Dae-Jin Seong , Daewoong Kim
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01J37/32357 , H01J37/32568 , H01L21/02049
摘要： A substrate processing apparatus and method includes a chamber, a remote plasma source outside the chamber to provide activated ammonia and activated hydrogen fluoride into the chamber, and a direct plasma source to provide ion energy to a substrate inside the chamber. The plasma source includes ground electrodes extending in a first direction on a first plane perpendicularly spaced apart from a plane on which the substrate is disposed and defined by the first direction and a second direction perpendicular to the first direction and power electrodes disposed between the ground electrodes, extending in the first direction parallel to each other and receiving power from an RF power source to generate plasma between adjacent ground electrodes. The activated ammonia and the activated hydrogen fluoride are supplied on the substrate through a space between the power electrode and the ground electrode.
摘要翻译：基板处理装置和方法包括：腔室，室外的远程等离子体源，以将激活的氨和活化的氟化氢提供到腔室中，以及直接等离子体源，以向腔室内的基底提供离子能量。等离子体源包括接地电极，该接地电极在垂直于第一平面间隔开的第一平面上延伸，该第一平面垂直于基板设置并由第一方向和垂直于第一方向的第二方向定义的平面间隔开，并且布置在接地电极在第一方向上彼此平行延伸并且从RF电源接收功率以在相邻接地电极之间产生等离子体。活性氨和活性氟化氢通过电力电极和接地电极之间的空间在基板上供应。

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