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1. 发明授权

US10497829B2 Semiconductor material doping 有权
公开(公告)号：US10497829B2
公开(公告)日：2019-12-03
申请号：US15856596
申请日：2017-12-28
申请人： Sensor Electronic Technology, Inc.
发明人： Maxim S. Shatalov , Remigijua Gaska , Jinwei Yang , Michael Shur , Alexander Dobrinsky
IPC分类号： H01L33/06 , H01L33/04 , H01L29/15 , H01L29/20 , H01L33/32 , H01L33/00 , B82Y10/00 , H01L29/201 , H01S5/20 , H01S5/32 , H01S5/34 , H01S5/343 , H01L29/207 , B82Y20/00
CPC分类号： H01L33/06 , B82Y10/00 , H01L29/155 , H01L29/2003 , H01L33/0075 , H01L33/04 , H01L33/32 , B82Y20/00 , H01L29/15 , H01L29/201 , H01L29/207 , H01S5/2009 , H01S5/3211 , H01S5/3216 , H01S5/3407 , H01S5/34333
摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).

2. 发明授权

US09985174B2 White light emitting structures with controllable emission color temperature 有权
公开(公告)号：US09985174B2
公开(公告)日：2018-05-29
申请号：US15173511
申请日：2016-06-03
申请人： Ostendo Technologies, Inc.
发明人： Hussein S. El-Ghoroury , Mikhail V. Kisin , Yea-Chuan Milton Yeh , Chih-Li Chuang , Jyh-Chia Chen
IPC分类号： H01L27/15 , H01L33/00 , H01L33/08 , H01L33/06 , H01L33/32 , H01S5/042 , H01S5/343 , H01S5/20 , H01S5/10 , H01S5/34 , H01S5/40
CPC分类号： H01L33/08 , H01L33/06 , H01L33/32 , H01S5/0421 , H01S5/1096 , H01S5/2009 , H01S5/3407 , H01S5/34333 , H01S5/4043 , H01S5/4093
摘要： Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

3. 发明申请

US20170338621A1 LASER ON SILICON MADE WITH 2D MATERIAL GAIN MEDIUM 有权
公开(公告)号：US20170338621A1
公开(公告)日：2017-11-23
申请号：US15156614
申请日：2016-05-17
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Ning Li , Devendra K. Sadana , Jinghui Yang
IPC分类号： H01S5/02 , H01S5/34 , H01S5/04
CPC分类号： H01S5/021 , H01L21/02381 , H01L21/02485 , H01L21/02488 , H01L21/02507 , H01L21/02568 , H01S5/026 , H01S5/041 , H01S5/1032 , H01S5/1046 , H01S5/1071 , H01S5/34 , H01S5/3401 , H01S5/3407 , H01S5/341
摘要： A laser structure includes a substrate and a first dielectric layer formed on the substrate. A multi-quantum well is formed on the first dielectric layer and has a plurality of alternating layers. The alternating layers include a dielectric layer having a sub-wavelength thickness and a monolayer of a two dimensional material.

4. 发明授权

US09444011B2 Nitride semiconductor device 有权
公开(公告)号：US09444011B2
公开(公告)日：2016-09-13
申请号：US14834470
申请日：2015-08-25
申请人： NICHIA CORPORATION
发明人： Tokuya Kozaki
IPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/24 , H01S5/183 , H01S5/34 , H01S5/343 , H01S5/20 , H01S5/22 , H01S5/30
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01L33/24 , H01S5/18308 , H01S5/18369 , H01S5/2009 , H01S5/22 , H01S5/305 , H01S5/3054 , H01S5/3086 , H01S5/3407 , H01S5/3415 , H01S5/343 , H01S5/34333 , H01S2304/12
摘要： In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.

5. 发明授权

US09263631B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09263631B2
公开(公告)日：2016-02-16
申请号：US14446929
申请日：2014-07-30
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Toshiki Hikosaka , Koichi Tachibana , Hajime Nago , Shinya Nunoue
IPC分类号： H01L21/00 , H01L33/06 , B82Y20/00 , H01S5/30 , H01S5/34 , H01S5/343 , H01L33/00 , H01L33/32
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0075 , H01L33/32 , H01S5/305 , H01S5/3407 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer.
摘要翻译：根据一个实施例，半导体发光器件包括n型层，p型层和设置在n型层和p型层之间并包括势垒层和阱层的发光单元。阻挡层中的至少一个包括第一和第二部分层。第一部分层设置在n型层的一侧。第二部分层设置在p型层的一侧，并且包含浓度高于第一部分层中的n型杂质。阱层中的至少一个包括第三和第四部分层。第三部分层设置在n型层的一侧。第四部分层设置在p型层的一侧，并且包含浓度高于第三部分层的n型杂质。

6. 发明授权

US09202971B2 Optoelectronic semiconductor chip 有权
标题翻译：光电半导体芯片
公开(公告)号：US09202971B2
公开(公告)日：2015-12-01
申请号：US14535044
申请日：2014-11-06
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： Adrian Avramescu , Désirée Queren , Christoph Eichler , Matthias Sabathil , Stephan Lutgen , Uwe Strauss
IPC分类号： H01S5/00 , H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/34 , H01S5/343
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01L2924/0002 , H01S5/3407 , H01S5/3425 , H01S5/34333 , H01S2301/173 , Y10S977/95 , Y10S977/951 , H01L2924/00
摘要： An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50≦∫(35−k(z))dz−2.5N−1.5∫dz≦120.
摘要翻译：一种基于氮化物材料系统的光电子半导体芯片，包括至少一个有源量子阱，其中在操作期间在有源量子阱中产生电磁辐射，有源量子阱在平行于生长方向z的方向上包括N个连续的区域的半导体芯片的N是大于或等于2的自然数，这些区域在与生长方向z平行的方向上连续编号，至少两个区域具有彼此不同的平均铝含量k，有效量子阱满足条件：50＆nlE;∫（35-k（z））dz-2.5N-1.5∫dz＆nlE; 120。

7. 发明授权

US09196786B2 Semiconductor light emitting element and method for manufacturing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US09196786B2
公开(公告)日：2015-11-24
申请号：US14104105
申请日：2013-12-12
申请人： Kabushiki Kaisha Toshiba
发明人： Hajime Nago , Shigeya Kimura , Yoshiyuki Harada , Shinya Nunoue
IPC分类号： H01L33/06 , H01L33/32 , H01S5/343 , B82Y20/00 , H01L33/02 , H01S5/32 , H01S5/34 , H01L33/00 , H01L33/14
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/007 , H01L33/025 , H01L33/14 , H01L33/325 , H01S5/3211 , H01S5/3407 , H01S5/34333 , H01S5/34346
摘要： According to one embodiment, a semiconductor light emitting element includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer includes a first p-side layer of Alx1Ga1−x1N (0≦x1
摘要翻译：根据一个实施例，半导体发光元件包括包括氮化物半导体，p型半导体层和发光层的n型半导体层。 p型半导体层包括包含Mg的Al x Ga 1-x N n（0＆nlE; x1 <1）的第一p侧层，包括Mg的Al x Ga 1-x 2 N（0

8. 发明申请

US20150311677A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150311677A1
公开(公告)日：2015-10-29
申请号：US14680678
申请日：2015-04-07
申请人： Renesas Electronics Corporation
发明人： Ryuji KOBAYASHI , Masahide KOBAYASHI
IPC分类号： H01S5/343 , H01S5/32 , H01S5/34 , H01S5/22
CPC分类号： H01S5/34333 , H01S5/0602 , H01S5/0658 , H01S5/22 , H01S5/221 , H01S5/2216 , H01S5/321 , H01S5/3407
摘要： The characteristics of a semiconductor laser are improved. In a semiconductor laser having an n type cladding layer, an active layer, and a p type cladding layer, a current block layer is provided. For example, the current block layer is arranged partially between the p type cladding layer and the active layer, and in the overlapping region of the p type cladding layer and the active layer. Thus, in a current narrowing region of the overlapping region of the p type cladding layer and the active layer, the current block layer is arranged, thereby to suppress the current injected into a part of the active layer. This results in the formation of a saturable absorbing region, which causes a difference in intensity of the optical output of the semiconductor laser. This can implement self-pulsation.
摘要翻译：提高了半导体激光器的特性。在具有n型包覆层，有源层和p型覆层的半导体激光器中，设置电流阻挡层。例如，当前块层部分地设置在p型覆层和有源层之间，并且在p型覆层和有源层的重叠区域中。因此，在p型覆层和有源层的重叠区域的电流变窄区域中，设置电流阻挡层，从而抑制注入有源层的一部分的电流。这导致形成可饱和吸收区域，这导致半导体激光器的光输出的强度差。这可以实现自我脉动。

9. 发明授权

US08994000B2 Optoelectronic semiconductor chip 有权
标题翻译：光电半导体芯片
公开(公告)号：US08994000B2
公开(公告)日：2015-03-31
申请号：US13546857
申请日：2012-07-11
申请人： Adrian Avramescu , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
发明人： Adrian Avramescu , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
IPC分类号： H01L29/06 , H01S5/343 , B82Y20/00 , H01L33/04 , H01S5/042 , H01L33/06 , H01L33/32 , H01S5/20 , H01S5/30 , H01S5/32 , H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/3072 , H01S5/3095 , H01S5/3202 , H01S5/3407 , H01L2924/00
摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.
摘要翻译：光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的有源区（2），适合的有源区（2）用于产生电磁辐射，所述有源区基于六方晶系化合物半导体，以及用于所述有源区（2）的n掺杂阻挡层（3）。还公开了包括这种半导体芯片的部件，以及制造这种半导体芯片的方法。

10. 发明授权

US08975616B2 Quantum efficiency of multiple quantum wells 有权
标题翻译：多量子阱的量子效率
公开(公告)号：US08975616B2
公开(公告)日：2015-03-10
申请号：US13541559
申请日：2012-07-03
申请人： Liang Wang , Ilyas Mohammed , Masud Beroz
发明人： Liang Wang , Ilyas Mohammed , Masud Beroz
IPC分类号： H01L29/06 , H01L31/00 , H01L33/06 , H01L31/0352 , H01L31/105 , H01L33/24 , H01S5/20 , H01S5/34 , H01S5/343 , H01S5/32
CPC分类号： H01L33/0075 , B82Y20/00 , H01L31/035236 , H01L31/105 , H01L33/0025 , H01L33/0066 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/62 , H01L2933/0033 , H01L2933/0066 , H01S5/2009 , H01S5/3205 , H01S5/3407 , H01S5/34333
摘要： Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for supplying electrons. The article of manufacture also includes a plurality of quantum well periods between the p side and the n side, each of the quantum well periods includes a quantum well layer and a barrier layer, with each of the barrier layers having a barrier height. The plurality of quantum well periods include different barrier heights.
摘要翻译：提高多量子阱的量子效率。根据本发明的实施例，制品包括用于供应空穴的p侧和用于提供电子的n侧。制品还包括在p侧和n侧之间的多个量子阱周期，每个量子阱周期包括量子阱层和阻挡层，其中每个势垒层具有势垒高度。多个量子阱周期包括不同的屏障高度。

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