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    • 5. 发明授权
    • Integrated circuits and methods for enabling high-speed AC-coupled networks to suppress noise during low-frequency operation
    • 用于使高速交流耦合网络在低频操作期间抑制噪声的集成电路和方法
    • US08035438B2
    • 2011-10-11
    • US12467259
    • 2009-05-16
    • Gerald Lee Esch, Jr.
    • Gerald Lee Esch, Jr.
    • H03L5/00
    • H03F1/52H03F3/45475H03F2203/45536H03F2203/45541H03F2203/45542H03F2203/45561H03F2203/45591H03F2203/45594H03F2203/45596
    • An alternating-current (AC) coupling integrated circuit (IC) suppresses signal errors introduced by a steady-state input signal. The IC includes an operational amplifier, a true direct-current (DC) bias network, a complimentary DC-bias network and first and second feedback elements. The operational amplifier has an inverting input, a non-inverting input and an output. The true DC-bias network has first and second branches that are coupled to one another and the non-inverting input. The complimentary DC-bias network has third and fourth branches that are coupled to one another and the inverting input. First and second feedback elements generate first and second control signals in response to a characteristic of one of the true input signal and the complimentary input signal. The control signals prevent the voltage at the inputs to the operational amplifier from reaching an equivalent, steady-state, DC-bias voltage.
    • 交流(AC)耦合集成电路(IC)抑制由稳态输入信号引入的信号误差。 IC包括运算放大器,真正的直流(DC)偏置网络,互补的DC偏置网络以及第一和第二反馈元件。 运算放大器具有反相输入,非反相输入和输出。 真正的DC偏置网络具有彼此耦合的第一和第二分支和非反相输入。 互补DC偏置网络具有彼此耦合的第三和第四分支和反相输入。 第一和第二反馈元件响应于真实输入信号和互补输入信号之一的特性产生第一和第二控制信号。 控制信号可防止运算放大器输入端的电压达到等效的稳态直流偏置电压。
    • 8. 发明申请
    • TRANSCONDUCTOR AND MIXER WITH HIGH LINEARITY
    • 具有高线性度的TRANSCONDUCTOR AND MIXER
    • US20080284489A1
    • 2008-11-20
    • US11748014
    • 2007-05-14
    • Eng Chuan Low
    • Eng Chuan Low
    • H03F3/189
    • H03F1/3211H03D7/1441H03D7/145H03D7/1458H03D7/1491H03D2200/0084H03F3/45197H03F2203/45326H03F2203/45364H03F2203/45596
    • A transconductor. The transconductor comprises first and second active device networks. The first active device network has a first node and a second node and comprises a first MOS transistor having a gate, a source coupled to the first node, and a drain coupled to the second node. The second active device network has a first node and a second node respectively connected to the first and second nodes of the first active device network and comprises a second MOS transistor and a voltage drop generator. The second MOS transistor has a gate and a source respectively connected to the gate and the source of the first MOS transistor. The voltage drop generator is coupled between a drain of the second MOS transistor and the second nodes of the first and second active device networks and generates a voltage drop across the same.
    • 跨导体。 跨导体包括第一和第二有源器件网络。 第一有源器件网络具有第一节点和第二节点,并且包括具有栅极的第一MOS晶体管,耦合到第一节点的源极和耦合到第二节点的漏极。 第二有源器件网络具有分别连接到第一有源器件网络的第一和第二节点的第一节点和第二节点,并且包括第二MOS晶体管和电压降发生器。 第二MOS晶体管具有分别连接到第一MOS晶体管的栅极和源极的栅极和源极。 电压降发生器耦合在第二MOS晶体管的漏极和第一和第二有源器件网络的第二节点之间,并在其上产生一个电压降。