Contact via structures转让专利

申请号 : US16683609

文献号 : US10777735B2

文献日 :

基本信息:

PDF:

法律信息:

相似专利:

发明人 : Chih-Chao YangDaniel C. EdelsteinBruce B. DorisHenry K. UtomoTheodorus E. StandaertNathan P. Marchack

申请人 : INTERNATIONAL BUSINESS MACHINES CORPORATION

摘要 :

Back end of line (BEOL) metallization structures and methods generally includes forming a landing pad on an interconnect structure. A multilayer structure including layers of metals and at least one insulating layer are provided on the structure and completely cover the landing pad. The landing pad is a metal-filled via and has a width dimension that is smaller than the multilayer structure, or the multilayer structure and the underlying metal conductor in the interconnect structure. The landing pad metal-filled via can have a width dimension that is sub-lithographic.