Contact via structures转让专利
申请号 : US16683609
文献号 : US10777735B2
文献日 : 2020-09-15
发明人 : Chih-Chao Yang , Daniel C. Edelstein , Bruce B. Doris , Henry K. Utomo , Theodorus E. Standaert , Nathan P. Marchack
申请人 : INTERNATIONAL BUSINESS MACHINES CORPORATION
摘要 :
Back end of line (BEOL) metallization structures and methods generally includes forming a landing pad on an interconnect structure. A multilayer structure including layers of metals and at least one insulating layer are provided on the structure and completely cover the landing pad. The landing pad is a metal-filled via and has a width dimension that is smaller than the multilayer structure, or the multilayer structure and the underlying metal conductor in the interconnect structure. The landing pad metal-filled via can have a width dimension that is sub-lithographic.