Pixel unit and display device utilizing the same

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Pixel unit and display device utilizing the same
申请号	US11563718	申请日	2006-11-28	公开(公告)号	US07659956B2	公开(公告)日	2010-02-09
申请人	Yeong-Feng Wang; Chun-Hao Tung; Liang-Bin Yu;			发明人	Yeong-Feng Wang; Chun-Hao Tung; Liang-Bin Yu;
摘要	A pixel unit comprising a first metal layer and a second metal layer. The first metal layer comprises a gate electrode and a first electrode. The second metal layer comprises a drain electrode, a source electrode, and a second electrode. The drain electrode overlaps the gate electrode in a first overlapping region. The source electrode overlaps the gate electrode in a second overlapping region. The second electrode overlaps the first electrode in a third overlapping region. The size of the first electrode approximates that of the second electrode. The first electrode and the second electrode are staggered.
权利要求	What is claimed is: 1. A pixel unit, comprising: a first metal layer comprising a gate electrode and a first electrode; anda second metal layer comprising a drain electrode overlapping the gate electrode in a first overlapping region, a source electrode overlapping the gate electrode in a second overlapping region, and a second electrode overlapping the first electrode in a third overlapping region, wherein the size of the first electrode approximates that of the second electrode and wherein the first electrode and the second electrode are staggered, wherein the areas of the first, the second, and the third overlapping regions are changed when the second metal layer is horizontally or vertically moved. 2. The pixel unit of claim 1, wherein the variable quantity of the area of the first overlapping region and that of the area of the third overlapping region have a direct ratio correlation. 3. The pixel unit of claim 1, wherein the area of the third overlapping region is changed according to the area of the first overlapping region when the shapes of the first and the second electrode are changed. 4. The pixel unit of claim 3, wherein the shapes of the first and the second electrode are fish-bone-shaped or railing-shaped. 5. The pixel unit of claim 1, further comprising a connection electrode coupled between the second electrode and the drain electrode, wherein the connection electrode does not overlap the gate electrode or the first electrode when the area of first overlapping region is changed. 6. The pixel unit of claim 5, wherein the second metal layer comprises the connection electrode. 7. The pixel unit of claim 1, further comprising a semiconductor layer disposed between the first and the second metal layers, wherein the semiconductor layer overlaps the gate electrode in a fourth overlapping region and wherein the semiconductor layer overlaps the first electrode in a fifth overlapping region. 8. The pixel unit of claim 7, wherein the areas of the fourth and fifth overlapping regions are changed when the semiconductor layer is horizontally or vertically moved. 9. The pixel unit of claim 7, wherein the fourth overlapping region overlaps a portion of the first overlapping region and a portion of the second overlapping region and wherein the fifth overlapping region overlaps a portion of the third overlapping region. 10. The pixel unit of claim 1, further comprising a gate line, the gate electrode being coupled to the gate line, wherein the first electrode comprises a first hole, and the second electrode comprises a second hole, and wherein the first hole and the gate line are vertical and the second hole and the gate line are vertical when the drain electrode and the gate line are vertical. 11. The pixel unit of claim 1, further comprising a gate line, the gate electrode being coupled to the gate line, wherein the first electrode comprises a first hole, and the second electrode comprises a second hole, and wherein the first hole and the gate line are horizontal and the second hole and the gate line are horizontal when the drain electrode and the gate line are horizontal. 12. The pixel unit of claim 1, wherein the shapes of the first and the second electrodes are substantially the same. 13. A display device, comprising: a scan driver for providing at least one scan signal;a data driver for providing at least one data signal; anda plurality of pixel units for receiving the scan and data signals, each pixel unit comprising a first metal layer comprising a gate electrode and a first electrode, and a second metal layer comprising a drain electrode overlapping the gate electrode in a first overlapping region, a source electrode overlapping the gate electrode in a second overlapping region, and a second electrode overlapping the first electrode in a third overlapping region, wherein the size of the first electrode approximates that of the second electrode and wherein the first electrode and the second electrode are staggered, wherein the areas of the first, the second, and the third overlapping regions are changed when the second metal layer is horizontally or vertically moved. 14. The display device of claim 13, wherein the variable quantity of the area of the first overlapping region and that of the area of the third overlapping region have a direct ratio correlation. 15. The display device of claim 13, wherein the area of the third overlapping region is changed according to the area of the first overlapping region when the shapes of the first and the second electrode are changed. 16. The display device of claim 15, wherein the shapes of the first and the second electrode are fish-bone-shaped or railing-shaped. 17. The display device of claim 13, further comprising a connection electrode coupled between the second electrode and the drain electrode, wherein the connection electrode does not overlap the gate electrode or the first electrode when the area of first overlapping region is changed. 18. The display device of claim 17, wherein the second metal layer comprises the connection electrode. 19. The display device of claim 13, further comprising a semiconductor layer disposed between the first and the second metal layers, wherein the semiconductor layer overlaps the gate electrode in a fourth overlapping region and wherein the semiconductor layer overlaps the first electrode in a fifth overlapping region. 20. The display device of claim 19, wherein the areas of the fourth and fifth overlapping regions are changed when the semiconductor layer is horizontally or vertically moved. 21. The display device of claim 20, wherein the fourth overlapping region overlaps part of the first overlapping region and part of the second overlapping region, and wherein the fifth overlapping region overlaps part of the third overlapping region. 22. The display device of claim 13, wherein each pixel unit further comprises a gate line, the gate electrode being coupled to the gate line, wherein the first electrode comprises a first hole, and the second electrode comprises a second hole, and wherein the first hole and the gate line are vertical and the second hole and the gate line are vertical when the drain electrode and the gate line are vertical. 23. The display device of claim 13, wherein each pixel unit further comprises a gate line, the gate electrode being coupled to the gate line, wherein the first electrode comprises a first hole, and the second electrode comprises a second hole, and wherein the first hole and the gate line are horizontal and the second hole and the gate line are horizontal when the drain electrode and the gate line are horizontal. 24. The display device of claim 13, wherein the shapes of the first and the second electrodes are substantially the same.
说明书全文	BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pixel unit, and more particular, to a pixel unit capable of auto-compensating parasitic capacitances. 2. Description of the Related Art FIG. 1a is a schematic diagram of a conventional pixel unit. The pixel unit 1 comprises a thin film transistor (TFT) 12 and a storage capacitor 14. The TFT 12 comprises a gate electrode 122 coupled to a gate line 16, a source electrode 124 coupled to a source line, and a drain electrode 126. The gate electrode 122 is formed by a first metal layer and the source electrode 124 and the drain electrode 126 is formed by a second metal layer. When an region 128, formed by a semiconductor layer, is disposed between the first and the second metal layers, a parasitical capacitor C_Pis formed by the gate electrode 122, an overlapping region A, and the drain electrode 126, wherein the drain electrode 126 overlaps the gate electrode 122 in the overlapping region A. Another parasitical capacitor is additionally formed near the gate electrode 122, an overlapping region B, and the source electrode 124, wherein the source electrode 124 overlaps the gate electrode 122 in the overlapping region B. FIG. 1b is an equivalent circuit for the conventional pixel unit shown in FIG. 1a. FIG. 1c is a timing diagram for the conventional pixel unit shown in FIG. 1a. During period t₁, a logic level of a scan signal, which is received by the gate line 16, is changed from low to high, the TFT 12 is turned on, the storage capacitor 14 and a liquid crystal capacitor C_LCbegins charging according to a data signal of the source line 18, and the voltage of the liquid crystal capacitor C_LCis charged to reach a voltage V₁. After period t₁, the logic level of the scan signal is changed from high to low such that the TFT 12 is turned off and a voltage V₁₄stored in the storage capacitor 14 is equal to the voltage V₁. Since the parasitical capacitor C_Pis generated between the gate electrode 122 and the drain electrode 126, the voltage V₁₄stored in the storage capacitor 14 is reduced ΔV from the voltage V₁. Since the voltage V₁₄and the voltage stored in the liquid crystal capacitor C_LCrepresent a brightness of the pixel unit 1, when the voltage V₁₄is changed, the pixel unit 1 will display abnormal brightness. A conventional method of solving this problem controls the common voltage V_comof a first electrode 22. When the voltage V₁₄stored in storage capacitor 14 reduces ΔV, the common voltage V_com1is reduced ΔV to a new common voltage V_com2. When manufacturing large size display panels, because the area of a mask region is insufficient to cover the display panel, the display panel is divided into various regions. Lithography technology comprising an exposure step, a developing step, an etching step, is then executed in each region. When an alignment error occurs in any step, the area of the overlapping region A is changed such that a capacitance of the parasitical capacitor C_Pis also changed. Since pixel units in different regions are formed during different periods, capacitances of the parasitical capacitors C_Pin different pixel units are different. When capacitances of parasitical capacitors C_Pin a display are different, the conventional solution cannot compensate effect for the effect upon parasitical capacitors. BRIEF SUMMARY OF THE INVENTION Pixel units are provided. An embodiment of a pixel unit comprises a first metal layer and a second metal layer. The first metal layer comprises a gate electrode and a first electrode. The second metal layer comprises a drain electrode overlapping the gate electrode in a first overlapping region, a source electrode overlapping the gate electrode in a second overlapping region, and a second electrode overlapping the first electrode in a third overlapping region. The size of the first electrode approximates that of the second electrode and the first electrode and the second electrode are staggered. Display devices are also provided. An embodiment of a display device comprises a scan driver, a data driver, and a plurality of pixel units. The scan driver provides at least one scan signal. The data driver provides at least one data signal. Each pixel unit receives the scan and data signals and comprises a first metal layer and a second metal layer. The first metal layer comprises a gate electrode and a first electrode. The second metal layer comprises a drain electrode overlapping the gate electrode in a first overlapping region, a source electrode overlapping the gate electrode in a second overlapping region, and a second electrode overlapping the first electrode in a third overlapping region. The size of the first electrode approximates that of the second electrode and the first electrode and the second electrode are staggered. A detailed description is given in the following embodiments with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The present invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein: FIG. 1a is a schematic diagram of a conventional pixel unit; FIG. 1b is an equivalent circuit for the conventional pixel unit shown in FIG. 1a; FIG. 1c is a timing diagram for the conventional pixel unit shown in FIG. 1a; FIG. 2a is a schematic diagram of an embodiment of pixel unit; and FIGS. 2b-5b are schematic diagrams of another embodiment of pixel unit. DETAILED DESCRIPTION OF THE INVENTION The following description is of the best-contemplated mode of carrying out the invention. This description is made for the purpose of illustrating the general principles of the invention and should not be taken in a limiting sense. The scope of the invention is best determined by reference to the appended claims. When a TFT 12 is turned from on to off, a voltage stored in a storage capacitor 14 is shifted due to a parasitical capacitor C_P. The shift value ΔV is expressed by the following equation 1. $\begin{matrix} Δ V = (V_{gateoff} - V_{gateon}) \frac{C_{gd}}{C_{gd} + C_{s} + C_{other}} & (equation 1) \end{matrix}$ wherein C_gdis a capacitance of the parasitic capacitor C_P, C_Sis a capacitance of the storage capacitor 14, C_otheris a capacitance of other capacitors, such as a liquid crystal capacitor C_LC, V_gateoffis a gate voltage when the TFT 12 is turned off, and V_gateonis a gate voltage when the TFT 12 is turned on. When an alignment error does not occur, if the TFT 12 is turned form on to off, the shift value ΔV₁of the storage capacitor 14 is expressed by the following equation 2. $\begin{matrix} Δ V_{1} = (V_{gateoff} - V_{gateon}) \frac{C_{gd 1}}{C_{gd 1} + C_{s 1} + C_{other}} & (equation 2) \end{matrix}$ wherein C_gd1is a capacitance of the parasitical capacitor C_Pwhen the alignment error does not occur, and C_S1is a capacitance of the storage capacitor 14 when the alignment error does not occur. When an alignment error occurs, if the TFT 12 is turned from on to off, the shift value ΔV₂of the storage capacitor 14 is expressed by the following equation 3. $\begin{matrix} Δ V_{2} = (V_{gateoff} - V_{gateon}) \frac{C_{gd 2}}{C_{gd 2} + C_{s 2} + C_{other}} & (equation 3) \end{matrix}$ wherein C_gd2is a capacitance of the parasitical capacitor C_Pwhen the alignment error occurs, and C_S2is a capacitance of the storage capacitor 14 when the alignment error occurs. To maintain the shift value, the shift value ΔV₁is set to equal the shift value ΔV₂. The result is given in following equation 4. $\begin{matrix} (V_{gateoff} - V_{gateon}) \frac{C_{gd 1}}{C_{gd 1} + C_{s 1} + C_{other}} = (V_{gateoff} - V_{gateon}) \frac{C_{gd 2}}{C_{gd 2} + C_{s 2} + C_{other}} & (equation 4) \end{matrix}$ Equation 4 is simplified to generate equation 5. $\begin{matrix} \frac{C_{gd 1}}{C_{gd 2}} = \frac{C_{S 1} + C_{other}}{C 2 + C_{other}} & (equation 5) \end{matrix}$ According to equation 5, when the capacitance C_gdof the parasitical capacitor C_Pis shifted from the capacitance C_gd1to the capacitance C_gd2, if the capacitance of the storage capacitor 14 is adjusted from the capacitance C_S1to the capacitance C_S2, the alignment error cannot effect the shift value ΔV of the capacitor 14. For example, when the alignment error does not occur, the capacitance C_gd1of the parasitic capacitor C_Pis 0.05 pF, the capacitance C_S1of the storage capacitor 14 is 0.7 pF, and the capacitance C_otheris 0.8 Pf. When the alignment error is occurring, the capacitance C_gd2of parasitic capacitor C_Pis changed to 0.05+ΔC_gdpF, the capacitance C_S1of the storage capacitor 14 is changed to 0.7+ΔC_SpF, and the capacitance C_otheris 0.8 Pf. Therefore, equation 5 is simplified as follows. $\begin{matrix} \frac{0.05}{0.05 + Δ C_{gd}} = \frac{0.7 + 0.8}{0.7 + Δ C_{S} + 0.8} & (equation 6) \\ Δ C_{S} = \frac{1.5}{0.05} \cdot Δ C_{gd} = 30 \cdot Δ C_{gd} & (equation 7) \end{matrix}$ To compensate for the alignment error, if the shift capacitance ΔC_gdof the parasitic capacitor C_Pis equal to 0.01 pF, the shift capacitance ΔC_Sof the storage capacitor 14 is equal to 0.3 Pf. A positive correlation, such as a direct ratio correlation, is between the capacitance C_gdand C_S. FIG. 2a is a schematic diagram of an exemplary embodiment of a pixel unit. The pixel unit can be applied in display devices for receiving scan signals provided by a scan driver (not shown) and data signals provided by a data driver (not shown). The pixel unit comprises a first metal layer and a second metal layer for constituting a driving device within the pixel unit. The first metal layer comprises a gate electrode 21 and a first electrode 22. A gate line 20 is coupled to the gate electrode 21 for providing scan signals. The second metal layer comprises a source electrode 23, a drain electrode 24, and a second electrode 25. A source line 27 is coupled to the source electrode 23 for providing data signals. Drain electrode 24 overlaps the gate electrode 21 in an overlapping region A, the source electrode 23 overlaps the gate electrode 21 in an overlapping region B, and the second electrode 25 overlaps the first electrode 22 in an overlapping region C. The size of the first electrode 22 approximates that of the second electrode 25 and the first electrode 22 and the second electrode 25 are staggered. The second metal layer further comprises a connection electrode 26 for connecting the drain electrode 24 and the second electrode 25. Connection electrode 26 does not overlap the first metal layer. Since a semiconductor layer is disposed between the first and the second metal layers, the parasitic capacitor C_Pshown in FIG. 1b is formed by the gate electrode 21, the overlapping region A, and the drain electrode 24, the storage capacitor 14 shown in FIG. 1b is formed by the first electrode 22, the overlapping region C, and the second electrode 25, and the TFT 12 shown in FIG. 1b is formed by the gate electrode 21, the source electrode 23, and the drain electrode 24. A parasitic capacitor is formed by the gate electrode 21, the overlapping region B, and the source electrode 23, when the TFT 12 is turned off, the parasitic capacitor formed by the gate electrode 21, the overlapping region B, and the source electrode 23 does not effect upon the voltage stored in the storage capacitor 14. Thus, the parasitic capacitor is omitted When the shape of the first electrode 22 and the second electrode 25 are changed, overlapping region C is changed accordingly to correspond to the overlapping region A. The sharps of the first electrode 22 and the second electrode 25 are not limited. In this embodiment, the first electrode 22 and the second electrode 25 are have a fish bones shape. As shown in FIG. 2a, when the drain electrode 24 and the second electrode 25 shifts from a left direction to a right direction, the areas of the overlapping regions A and C are reduced. Thus, the capacitances of the parasitical capacitor C_Pand the storage capacitor 14 are reduced. When the drain electrode 24 and the second electrode 25 shifts from the right direction to the left direction, the areas of the overlapping regions A and C are increased. Thus, the capacitances of the parasitic capacitor C_Pand the storage capacitor 14 are increased. When the area of the overlapping region A does not change, the area of the overlapping region C does not be change. FIG. 2b is a schematic diagram of another embodiment of a pixel unit. FIG. 2b is similar to FIG. 2a except the first electrode 22 and the second electrode 25 are rail shaped. When the drain electrode 24 moves horizontally in a left-right direction, the second electrode 25 also moves horizontally in the left-right direction. As shown in FIG. 2b, the drain electrode 24 and the gate line 20 are vertical such that holes of the first electrode 22 and the second electrode 25 and the gate line 20 are vertical. FIG. 3a is a schematic diagram of another embodiment of a pixel unit. The pixel unit shown in FIG. 3a compensates the alignment error in a vertical direction. When the drain electrode 24 moves vertically in a top-down direction, the second electrode 25 also moves vertically in the top-down direction. Therefore the area of overlapping region C is changed correspond to the area of the overlapping region A. As shown in FIG. 3a, drain electrode 24 and gate line 20 are horizontal such that holes of the first electrode 22 and the second electrode 25 and the gate line 20 are horizontal. FIG. 3b is a schematic diagram of another embodiment of a pixel unit. FIG. 3b is similar to FIG. 3a except the sharps of the first electrode 22 and the second electrode 25. The embodiments shown in FIGS. 2a-3b prevent the alignment error from occurring in the second metal layer. The embodiments shown in FIGS. 4a-5b prevent the alignment error from occurring in the semiconductor layer disposed between the first and the second metal layers. As shown in FIGS. 4a and 4b, the semiconductor layer comprises regions 42 and 44. The region 42 overlaps the gate electrode 21 in a first overlapping region. The region 44 overlaps the first electrode 22 in a second overlapping region. When the region 42 shifts from a right direction to a left direction, the area of the first overlapping region are reduced. When region 42 shifts from the left direction to the right direction, the area of the first overlapping region are increased. To prevent the effect of capacitance from parasitic capacitor C_Pon the first overlapping region, the area of the second overlapping region is changed to correspond to the area of the first overlapping region. As shown in FIGS. 5a and 5b, when the semiconductor layer moves horizontally in a left-right direction, the measures of the first and the second overlapping regions are changed. Since the capacitance of the storage capacitor is changed according to the capacitance of the parasitical capacitor, the capacitance of the parasitic capacitor can be auto-compensated when an alignment error occurs. Therefore, the shift value of storage capacitor is fixed such that the conventional solution can be applied to compensate the shift value of storage capacitor. While the invention has been described by way of example and in terms of the preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. Rather, it is intended to cover various modifications and similar arrangements (as would be apparent to those skilled in the art). Therefore, the scope of the appended claims should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements.