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91. 发明授权

US11251291B2 Silicon carbide semiconductor device 有权
公开(公告)号：US11251291B2
公开(公告)日：2022-02-15
申请号：US16951853
申请日：2020-11-18
申请人： FUJI ELECTRIC CO., LTD.
发明人： Shinichiro Matsunaga
IPC分类号： H01L29/739 , H01L29/74 , H01L29/16
摘要： A silicon carbide semiconductor device includes first semiconductor areas and second semiconductor areas. The first semiconductor areas have a first semiconductor layer of a second conductivity type, a second semiconductor layer of a first conductivity type, first semiconductor regions of the second conductivity type, second semiconductor regions of the first conductivity type, gate electrodes, and first electrodes. The second semiconductor areas have the first semiconductor layer, the second semiconductor layer, third semiconductor regions of the second conductivity type, the gate electrodes, and the first electrodes. The first semiconductor regions include low- impurity-concentration regions and high-impurity-concentration regions. The third semiconductor regions have a potential equal to that of the first electrodes. The first semiconductor regions are connected to the third semiconductor regions by MOS structures. In the first semiconductor regions, the high-impurity-concentration regions are provided at positions different from positions facing the first electrodes.

92. 发明授权

US11251271B2 Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device 有权
公开(公告)号：US11251271B2
公开(公告)日：2022-02-15
申请号：US17039525
申请日：2020-09-30
申请人： FUJI ELECTRIC CO., LTD.
发明人： Takumi Fujimoto
IPC分类号： H01L29/16 , H01L29/45 , H01L21/203 , H01L29/423 , H01L21/02 , H01L21/04
摘要： A semiconductor device having a semiconductor substrate that includes first to third epitaxial layers provided sequentially on a starting substrate, the third epitaxial layer forming a pn junction with the second epitaxial layer, and including a plurality of first semiconductor regions formed on a second semiconductor region. The semiconductor device further includes a plurality of trenches penetrating the first and second semiconductor regions to reach the second epitaxial layer, a plurality of gate electrodes provided in the trenches respectively via a gate insulating film, a metal film in ohmic contact with the first semiconductor regions, a first electrode electrically connected to the first semiconductor regions via the metal film, and a second electrode provided at a back surface of the starting substrate. Each of the starting substrate and the first to third epitaxial layers contains silicon carbide. The silicon carbide semiconductor device has a vacancy trap in an entire area of the semiconductor substrate.

93. 发明授权

US11245031B2 Semiconductor device 有权
公开(公告)号：US11245031B2
公开(公告)日：2022-02-08
申请号：US16836456
申请日：2020-03-31
申请人： FUJI ELECTRIC CO., LTD.
发明人： Yasuyuki Hoshi
IPC分类号： H01L29/78 , H01L29/10 , H01L29/06 , H01L23/00 , G01R19/165 , H01L29/66 , H01L27/02
摘要： A region of a portion directly beneath an OC pad is a sensing effective region in which unit cells of a current sensing portion are disposed. A p-type low-dose region is provided on a front surface of a semiconductor substrate and surrounds a periphery of the sensing effective region. The p-type low-dose region is fixed at an electric potential of a source pad of a main semiconductor element. The p-type low-dose region is disposed to be separated from a p-type base region of the sensing effective region by an n−-type region between the p-type low-dose region and the sensing effective region. A total dose of impurities in the p-type low-dose region is lower than a total dose of impurities in a p-type region of a front side of a semiconductor substrate in a main effective region in which unit cells of the main semiconductor element are disposed.

94. 发明授权

US11239356B2 Semiconductor device and method of manufacturing semiconductor device 有权
公开(公告)号：US11239356B2
公开(公告)日：2022-02-01
申请号：US15283501
申请日：2016-10-03
申请人： FUJI ELECTRIC CO., LTD.
发明人： Akimasa Kinoshita , Yasuyuki Hoshi , Yuichi Harada , Yasuhiko Oonishi
IPC分类号： H01L29/76 , H01L29/78 , H01L21/265 , H01L29/32 , H01L21/02 , H01L21/04 , H01L21/22 , H01L21/304 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/16 , H01L29/36 , H01L29/417 , H01L29/66 , H01L21/266
摘要： A semiconductor device includes an N-type silicon carbide layer, a P-type region, an N-type source region, a P-type contact region, a gate insulating film, a gate electrode, and a source electrode on the front surface side of an N-type silicon carbide substrate. A drain electrode is located on the back surface of the N-type silicon carbide substrate. A life time killer introduction region is located along an entire interface of the N-type silicon carbide layer and the bottom face of the P-type region. The life time killer is introduced by implanting helium or protons from the back surface side of the N-type silicon carbide substrate after forming a surface structure of an element on the front surface side of the N-type silicon carbide substrate and before forming the drain electrode.

95. 发明授权

US11239353B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US11239353B2
公开(公告)日：2022-02-01
申请号：US16670412
申请日：2019-10-31
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人： Sun Jin Yun , Kwang Hoon Jung , So Hyun Kim , Jung Wook Lim
IPC分类号： H01L31/00 , H01L29/76 , H01L29/06 , H01L29/786 , H01L21/02 , H01L29/04
摘要： Provided is a method of manufacturing a semiconductor device. The method includes providing a substrate, forming uneven portions in a region of the substrate in which an electrode is to be formed, forming a precursor film formed of a two-dimensional material on the substrate on which the uneven portions are formed, forming a metal chalcogen film by performing a chalcogenation process on the formed precursor film, and forming the electrode on the formed metal chalcogen film.

96. 发明授权

US11239131B2 Semiconductor module 有权
公开(公告)号：US11239131B2
公开(公告)日：2022-02-01
申请号：US17003604
申请日：2020-08-26
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tomoyuki Wakiyama
IPC分类号： H01L23/367 , H01L23/498
摘要： A semiconductor module, including a laminated substrate that has an insulating plate, a circuit board disposed on a top surface of the insulating plate, and a heat dissipation plate disposed on a bottom surface of the insulating plate. The semiconductor module further has a semiconductor element disposed on a top surface of the circuit board, a metal wiring board disposed on a top surface of the semiconductor element, and a temperature sensor that detects a temperature of the semiconductor element, and that is disposed on a top surface of the metal wiring board. The metal wiring board includes a heat blocking part that blocks heat of the semiconductor element.

97. 发明授权

US11233165B2 Multi-junction solar cell and manufacturing method of the same 有权
公开(公告)号：US11233165B2
公开(公告)日：2022-01-25
申请号：US16366111
申请日：2019-03-27
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Jeung Hyun Jeong , In Ho Kim , Won Mok Kim , Jong Keuk Park , Hyeong Geun Yu
IPC分类号： H01L31/0725 , H01L31/074 , H01L31/0749 , H01L31/0224 , H01L31/0352 , H01L31/18 , B23K26/00 , B23K26/06 , B23K26/0622 , B23K26/53 , B23K101/40
摘要： Provided is a multi-junction solar cell in which two or more absorption layers having different bandgaps are stacked on one another. The multi-junction solar cell includes a first cell including a first absorption layer, and a second cell electrically connected in series onto the first cell, wherein the second cell includes a second absorption layer having a higher bandgap compared to the first absorption layer, and a plurality of recesses penetrating through the second absorption layer.

98. 发明授权

US11232764B2 Display driver and display device 有权
公开(公告)号：US11232764B2
公开(公告)日：2022-01-25
申请号：US17064077
申请日：2020-10-06
申请人： LAPIS Semiconductor Co., Ltd.
发明人： Hideki Masai
IPC分类号： G09G3/36
摘要： A first latch retrieves a pixel data piece for each one horizontal scanning period of a video data signal and holds the pixel data piece as a first pixel data piece. A second latch retrieves the first pixel data piece from the first latch at a timing when the retrieval by the first latch is completed and holds the first pixel data piece as a second pixel data piece. An interpolation data generating unit obtains the first pixel data piece and the second pixel data piece and generates an interpolation data piece. A third latch alternately performs a retrieval of the second pixel data piece and a retrieval of the interpolation data piece, and sequentially outputs the retrieved data piece as a third pixel data piece. A gradation voltage output unit outputs the gradation voltage signal based on the third pixel data piece.

99. 发明授权

US11232762B2 Semiconductor device and data driver 有权
公开(公告)号：US11232762B2
公开(公告)日：2022-01-25
申请号：US16831780
申请日：2020-03-26
申请人： LAPIS Semiconductor Co., Ltd.
发明人： Hiroshi Tsuchi
IPC分类号： G09G3/36 , H03F3/45 , H03K3/356
摘要： In the present invention, a differential amplifier that includes a first output transistor and a second output transistor includes a boost circuit that includes a third output transistor and a fourth output transistor. The first output transistor delivers a current according to a first differential signal generated in a differential stage to an output terminal. The second output transistor extracts a current according to a second differential signal generated as a signal which is the same phase with a different potential of the first differential signal from the output terminal. The third output transistor delivers a current to the output terminal according to a level-shifting signal generated by level-shifting the first differential signal. The fourth output transistor extracts a current from the output terminal according to a level-shifting signal generated by level-shifting the second differential signal. As the third and fourth output transistors, transistors having withstand voltages against gate-source voltages lower than those of the first and second output transistors and drain currents larger than those of the first and second output transistors are employed.

100. 发明授权

US11231033B2 Cartridge vane pump and pump device 有权
公开(公告)号：US11231033B2
公开(公告)日：2022-01-25
申请号：US16611982
申请日：2018-04-25
申请人： KYB Corporation
发明人： Masamichi Sugihara
IPC分类号： F03C2/00 , F03C4/00 , F04C18/00 , F04C2/00 , F04C2/344 , F01C21/10 , F04C15/00
摘要： A cartridge vane pump includes a rotor, a plurality of vanes, a cam ring, a side member brought into contact with a first end surface of the cam ring, a cover member brought into contact with a second end surface of the cam ring, the cover member being attached to the body, and a linkage member provided to extend between the side member and the cover member over an outer circumferential surface of the cam ring, the linkage member being configured to link the side member and the cover member.

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