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    • 94. 发明专利
    • PROCESSING DEVICE
    • JPH09106897A
    • 1997-04-22
    • JP26445795
    • 1995-10-12
    • MORI YUZONIKON CORP
    • TAKINO HIDEOITO HIROSHIKOBAYASHI TERUNORISHIBATA NORIO
    • H05H1/46G02B3/00H01L21/302H01L21/3065
    • PROBLEM TO BE SOLVED: To obtain processing with its high-precision efficiency for a surface such as optical lens by removing a surface layer with its uniform thickness while the shape precision of a processing face of a material to be processed is maintained by means of radial reaction generated by means of plasma. SOLUTION: A spherical face lens 10 is placed on a work table 1 of a lens processing device. A chamber 9 is closed, and the chamber 9 is temporarily de-pressurized by means of a gas discharge system 5. A reaction gas is supplied by means of a gas supply system, the pressure in the chamber is set to a specified pressure. A plasma generating unit of a processing electrode 2 is made close to a predetermined distance from the surface of a processed lens 10. High- frequency power is applied to the processing electrode 2 by means of a power supply system 3. An arc-shaped local plasma is generated along the plasma generating unit of the processing electrode 2, and radical of reaction gas is generated by means of this plasma. The radical of the reaction gas and the processed lens 10 react, the processed lens 10 reacts, and the surface of the processed lens is processed. The generated gas is discharged by means of the gas discharge system.
    • 96. 发明专利
    • ELECTRODE FOR PLASMA CVM POLISHING AND PROCESSING
    • JPH07166375A
    • 1995-06-27
    • JP19377393
    • 1993-08-04
    • MORI YUZOJAPAN RES DEV CORPOFIC CO
    • TANI TAKENORI
    • B24B1/00C23F4/00
    • PURPOSE:To make processing patterns distinct and carry out polishing with a high accuracy and high efficiency by specifically providing the electrode using high-frequency plasma with holes for supplying a gaseous mixture and radiating plasma.radicals by swirling flow from a nozzle part. CONSTITUTION:This electrode has the conductive nozzle part 1, a hollow distributor part 2, a casing part 3 and a cover part 4. A graphite rod 5 for the electrode is inserted into the space within the nozzle part 1 reducing gradually toward a radiation port 11. The distributor part 2 and the casing part 3 are communicated with the supply holes 21 for supplying the gaseous mixture composed of reactive gases for plasma formation and inert gas introduced from an introducing port 41 via a distributing part 42 to the space in the distributor part 2. Plural pieces of the supply holes 21 are arranged to incline with the central axes of the distributor part 2 and the nozzle part 1. The gaseous mixture supplied by these holes form the swirling flow and the plasma radicals by this swirling flow are radiated to the surface 6 of the material to be worked opposite to the radiation port 11.
    • 98. 发明专利
    • PROCESSING OF SUPERFINE MIRROR SURFACE AND DEVICE THEREOF
    • JPH06168924A
    • 1994-06-14
    • JP10034792
    • 1992-03-25
    • YUUHA MIKAKUTOU SEIMITSU KOGAKMORI YUZO
    • MORI YUZO
    • C23F4/00H01L21/302H01L21/304H01L21/3065
    • PURPOSE:To provide a method of processing a superfine mirror surface, which is capable of processing smoothly the surface of a workpiece both in a microscopical manner and a macroscopical manner in the order of atom size without introducing a processing deteriorated layer utilizing a radical reaction, and a device for the method. CONSTITUTION:An electrode support body 3 consisting of an insulator having a plurality of parallel grooves 4 opened on the side of a processed surface 8 is provided and a wire electrode 5 or a blade electrode for applying a high-frequency voltage from a high-frequency power supply is arranged in each groove. An electrode structure 1 constituted in such a way as to provide nozzles 6, which are opened in the grooves and generate a high-speed gas flow of the mixed gas consisting of reaction gas and inert gas in the longitudinal direction of the grooves, and a stage 9 for fixing a workpiece W, which is provided at a prescribed fine interval D to the structure 1 and has a plane-shaped processed surface, are provided and a superfine mirror surface processing device consists of the electrode support body 3, the structure 1, the stage 9 and a workpiece support structure 2 having a driving mechanism, which maintains the stage in parallel to the structure 1 and enables the stage to make a relative motion.
    • 99. 发明专利
    • JPH05234942A
    • 1993-09-10
    • JP7446591
    • 1991-03-13
    • MORI YUZOYUUHA MIKAKUTOU SEIMITSU KOGAK
    • MORI YUZO
    • H01L21/302H01L21/3065
    • PURPOSE:To obtain an electrode capable of always supplying a constant amount of reaction gas to the whole part of a working region, or supplying constant density neutral radicals based on the reaction gas, when cutting or mirror- finishing is performed, by a method wherein a gas supply channel which is opened toward the processed surface side and supplies atmosphere gas containing the reaction gas is installed in the inside. CONSTITUTION:A DC voltage or an AC voltage is applied to an electrode 2. Neutral radicals 4 based on reaction gas 3 are formed by the electric field. Volatile material 6 formed by radical reaction of the neutral radicals with atoms or molecules constituting the processed surface 7 of an object to be processed is vaporized and eliminated to progress the working. As to the electrode 2 for working use of a distortionless precise machining equipment, a gas supplying channel 8 is installed inside the electrode open toward the processed surface 7 side to supply atmosphere gas containing the reaction gas 3. For example, the gas supplying channel 8 is formed in the inside, the tip is constituted as a pin type to which electric field concentrates, and the neutral radicals are formed between the electrode and the processed surface 7.
    • 100. 发明专利
    • METHOD AND APPARATUS FOR UNDISTORTED PRECISION CUTTING BY RADICAL REACTION
    • JPH04162523A
    • 1992-06-08
    • JP28927190
    • 1990-10-25
    • YUUHA MIKAKUTOU SEIMITSU KOUGAMORI YUZO
    • MORI YUZO
    • H01L21/304H01L21/302H01L21/3065
    • PURPOSE:To narrow the cutting width of a silicon single crystal or the like and to eliminate a danger that an electrode is cut by a highly corrosive reaction gas by a method wherein a workpiece is turned in a gas atmosphere containing a reaction gas and neutral radicals are generated between the end edge of a ribbon-shaped blade electrode to which a high-frequency voltage has been applied and a working part. CONSTITUTION:A workpiece W, which has been arranged in a gas atmosphere containing a reaction gas is turned; a high-frequency voltage is applied to a ribbon- shaped blade electrode 11 which has been stretched and installed parallel with a face perpendicular to its shaft R; neutral radicals based on the reaction gas are generated between the end edge 9 of the blade electrode 1 and a working part 7; a volatile substance produced by a radical reaction of the neutral radicals with atoms or molecules at the working part 7 is gasified and removed. As the working part 7 is retreated, the blade electrode 1 is advanced parallel and the workpiece W is cut. For example, flat nozzles 15 are inserted into a working groove 8 which has been formed in a workpiece W by means of said blade electrode 1, a gas containing a reaction gas is spouted from the nozzles 15 and said cutting operation is executed.