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91. 发明申请

WO2013049490A3 CAPACITIVE PRESSURE SENSOR WITH IMPROVED ELECTRODE STRUCTURE 审中-公开
标题翻译：具有改进的电极结构的电容式压力传感器
公开(公告)号：WO2013049490A3
公开(公告)日：2013-06-13
申请号：PCT/US2012057797
申请日：2012-09-28
申请人： MKS INSTR INC , BLANKENSHIP STEVEN D
发明人： BLANKENSHIP STEVEN D
IPC分类号： G01L9/00 , G01L19/04
CPC分类号： G01L9/0072 , G01L9/0048 , G01L19/04
摘要： An improved capacitive manometer, the manometer comprises: (a) a diaphragm including a common electrode and (b) an electrode structure including a center electrode and ring electrode, wherein the diaphragm is movable relative to the electrode structure between (i) a zero position when the pressure on each side of the diaphragm is the same and (ii) a maximum differential position when the maximum measurable differential pressure is applied to the diaphragm; and a diaphragm support structure arranged so as to support the diaphragm so that the diaphragm is constrained relative to the electrode structure, and the common electrode is spaced from and axially aligned with the center and ring electrodes relative to an alignment axis of the manometer; and an electrode support structure arranged to support the electrode structure and comprising a compliant ring including at least three flexures integrally formed in the ring and angularly spaced around the alignment axis; wherein the electrode support is clamped in place relative to the diaphragm at the locations of the compliant ring flexures.
摘要翻译：一种改进的电容式压力计，压力计包括：（a）包括公共电极的膜片和（b）包括中心电极和环形电极的电极结构，其中膜片相对于电极结构在（i）零位当隔膜的每一侧的压力相同时，以及（ii）当最大可测量差压被施加到隔膜时的最大差分位置; 以及隔膜支撑结构，布置成支撑所述隔膜，使得所述隔膜相对于所述电极结构被约束，并且所述公共电极相对于所述压力计的对准轴线与所述中心电极和所述环形电极隔开并且与所述中心电极和所述环形电极轴向对齐; 以及电极支撑结构，其被布置为支撑所述电极结构并且包括柔性环，所述柔性环包括一体地形成在所述环中并且围绕所述对准轴成角度地间隔开的至少三个挠曲件; 其中所述电极支撑件在所述柔性环挠曲件的位置处相对于所述隔膜被夹持就位。

92. 发明申请

WO2012112803A1 COMPENSATION OF STRESS EFFECTS ON PRESSURE SENSOR COMPONENTS 审中-公开
标题翻译：压力传感器部件的应力效应补偿
公开(公告)号：WO2012112803A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/025497
申请日：2012-02-16
申请人： SILICON MICROSTRUCTURES, INC. , AUGUST, Richard, J. , DOELLE, Michael, B.
发明人： AUGUST, Richard, J. , DOELLE, Michael, B.
IPC分类号： B81C1/00 , G01L19/04 , G01L19/06 , H01L29/84 , G01L1/22 , G01L9/00
CPC分类号： G01L9/0048 , G01L9/0042 , G01L9/0051 , G01L19/04 , H01C10/10 , H01C17/00 , H01G5/01 , Y10T29/41 , Y10T29/49 , Y10T29/49103
摘要： Pressure sensors having components with reduced variations due to stresses caused by various layers and components that are included in the manufacturing process. In one example, a first stress in a first direction causes a variation in a component. A second stress in a second direction is applied, thereby reducing the variation in the component. The first and second stresses may be caused by a polysilicon layer, while the component may be a resistor in a Wheatstone bridge.
摘要翻译：压力传感器具有由于包括在制造过程中的各种层和部件引起的应力而具有减小的变化的部件。在一个示例中，第一方向上的第一应力导致部件的变化。施加第二方向的第二应力，从而减小部件的变化。第一和第二应力可以由多晶硅层引起，而组件可以是惠斯通电桥中的电阻器。

93. 发明申请

WO2012003110A1 CAPACITIVE PRESSURE SENSOR WITH A GROOVE FOR RELIEVING DIAPHRAGM STRESSES 审中-公开
标题翻译：具有用于消除膜片压力的槽的电容式压力传感器
公开(公告)号：WO2012003110A1
公开(公告)日：2012-01-05
申请号：PCT/US2011/041211
申请日：2011-06-21
申请人： MKS INSTRUMENTS, INC. , GRUDZIEN, Chrisy
发明人： GRUDZIEN, Chrisy
IPC分类号： G01L7/08 , G01L9/00
CPC分类号： G01L9/0072 , G01L9/0048
摘要： A sensor assembly includes a housing assembly, an electrode arrangement and a diaphragm having a fixed portion secured to the housing assembly and an active portion movable relative to the electrode arrangement in response to a differential pressure applied to opposite sides of the diaphragm. The fixed portion of the diaphragm is secured at one or more locations relative to at least a portion of the housing assembly; and at least one groove is formed in the fixed portion of the diaphragm between the locations at which the diaphragm is fixed relative to the housing assembly and the active portion so as to relieve any stress on the active portion of the diaphragm. A method of making the sensor assembly is also disclosed.
摘要翻译：传感器组件包括壳体组件，电极装置和隔膜，其具有固定到壳体组件的固定部分，以及响应于施加到隔膜的相对侧的差压而相对于电极装置可移动的有源部分。隔膜的固定部分相对于壳体组件的至少一部分固定在一个或多个位置; 并且在膜片的固定部分中，在膜片相对于壳体组件和有源部分固定的位置之间形成至少一个凹槽，以便减轻膜片的有效部分上的任何应力。还公开了制造传感器组件的方法。

94. 发明申请

WO2007018088A1 静電容量型圧力計のダイヤフラム取付構造审中-公开
标题翻译：静电电容型压力表的膜片安装结构
公开(公告)号：WO2007018088A1
公开(公告)日：2007-02-15
申请号：PCT/JP2006/315296
申请日：2006-08-02
申请人：株式会社堀場エステック , 池田亨
发明人：池田亨
IPC分类号： G01L9/12
CPC分类号： G01L9/0072 , G01L9/0048
摘要：　この発明は、製作容易でコストの上昇を抑えつつ、溶接不良及び熱歪の発生を抑制して計測精度の向上を達成することができる静電容量型圧力計のダイヤフラム取付構造を提供するものである。　この発明は、筒状ケースの一端開口側に流体圧受圧用のダイヤフラムが張設されているとともに、このダイヤフラムの受圧面とは反対側の筒状ケース内には該ダイヤフラムの撓み変位を電気容量の変化として取り出す固定側電極が設けられている静電容量型圧力計において、前記ダイヤフラムの外周縁部分を中央部分よりも肉厚に形成し、この肉厚外周縁部分を熱溶融させて前記筒状ケースの一端開口周りの端面部に溶接し固着している。
摘要翻译：静电电容式压力计的膜片安装结构容易制造，并且能够通过抑制焊接不良和热应变的发生而抑制成本的上升而实现测量精度的提高。在静电电容型压力计中，用于接收流体压力的膜片紧密地配合到管状壳体的一个端部开口侧，并且固定侧电极用于取出膜片的变形位移，因为电容变化被安装在在隔膜的压力接收表面的相对侧的管状壳体。膜片的外周边缘部分的壁厚比其中心部分形成得更大，并且隔膜的厚壁外周缘部分被热熔合，以将其固定地焊接到管状壳体的端面部分周围其一端开口部分。

95. 发明申请

WO1989005963A1 SILICON-BASED MASS AIRFLOW SENSOR 审中-公开
标题翻译：基于硅的大气压传感器
公开(公告)号：WO1989005963A1
公开(公告)日：1989-06-29
申请号：PCT/US1988004511
申请日：1988-12-16
申请人： SIEMENS-BENDIX AUTOMOTIVE ELECTRONICS L.P.
发明人： SIEMENS-BENDIX AUTOMOTIVE ELECTRONICS L.P. , LEE, Ki, W. , CHOI, Il-Hyun
IPC分类号： G01D01/68
CPC分类号： G01L9/0048 , G01F1/6845
摘要： A mass airflow sensor is fabricated on a semiconductor substrate (18) and includes a dielectric diaphragm (1), p-etch-stopped silicon rim (2), thin-film heating (3) and temperature sensing elements (4-7), and tapered chip edges (18). The dielectric diaphragm (1) is formed with thin silicon oxide and silicon nitride in a sandwich structure (32) and provides excellent thermal insulation for the sensing (4-7) and heating (3) elements of the sensor. The diaphragm (1) dimensions, including thickness, are accurately controlled through the use of the heavily-p-doped silicon rim (2) to help ensure uniform and reproducible sensor performance.

96. 发明申请

US20180346319A1 SEMICONDUCTOR MANUFACTURING METHOD 审中-公开
公开(公告)号：US20180346319A1
公开(公告)日：2018-12-06
申请号：US16046787
申请日：2018-07-26
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人： CHUN-WEN CHENG , CHIA-HUA CHU , FEI-LUNG LAI , SHIANG-CHI LIN
IPC分类号： B81B7/00 , B81C1/00 , G01L9/00 , G01N27/12
CPC分类号： B81B7/007 , B81B2201/0214 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81B2207/012 , B81B2207/07 , B81C1/0015 , B81C1/00158 , B81C1/00182 , B81C1/00301 , B81C2203/035 , B81C2203/0792 , G01L9/0041 , G01L9/0042 , G01L9/0044 , G01L9/0045 , G01L9/0048 , G01N27/123
摘要： A method of manufacturing a semiconductor structure includes receiving a substrate, receiving a heater, receiving an electrode, and receiving a sensing material. The substrate have a first surface, a second surface opposite to the first surface and a plurality of vias extending from the second surface toward the first surface and filled with a conductive or semiconductive material and a first oxide layer, the first oxide layer surrounding the conductive or semiconductive material in the plurality of vias, and a second oxide layer disposed over the first surface and the second surface. The heater is disposed within a membrane over the first surface of the substrate and electrically connected with the substrate. The electrode is over the heater and the membrane; and the sensing material covers a portion of the electrode.

97. 发明申请

US20180179050A1 MINIATURIZED AND RUGGEDIZED WAFER LEVEL MEMS FORCE SENSORS 审中-公开
公开(公告)号：US20180179050A1
公开(公告)日：2018-06-28
申请号：US15904631
申请日：2018-02-26
申请人： NextInput, Inc.
发明人： Amnon Brosh , Ryan Diestelhorst , Steven Nasiri
IPC分类号： B81B3/00 , G01L1/18 , G01L1/20 , B81C1/00
CPC分类号： B81B3/0056 , B81B2201/0264 , B81B2201/0292 , B81C1/00626 , G01L1/18 , G01L1/205 , G01L9/0047 , G01L9/0048
摘要： Described herein is a miniaturized and ruggedized wafer level MEMS force sensor composed of a base and a cap. The sensor employs multiple flexible membranes, a mechanical overload stop, a retaining wall, and piezoresistive strain gauges.

98. 发明申请

US20180044166A1 MEMS Sensor, Especially Pressure Sensor 审中-公开
公开(公告)号：US20180044166A1
公开(公告)日：2018-02-15
申请号：US15556070
申请日：2016-03-04
申请人： Endress + Hauser GmbH + Co. KG
发明人： Rafael Teipen , Benjamin Lemke
IPC分类号： B81B3/00 , G01L9/00 , B81C1/00
CPC分类号： B81B3/0072 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81B2203/04 , B81C1/00531 , B81C2201/0132 , G01L9/0048 , G01L9/0073 , G01L13/025 , G01L19/0618
摘要： A MEMS sensor with improved overload resistance for metrological registering of a measured variable comprises a plurality of layers, especially silicon layers, arranged on one another. The layers include at least one inner layer, which is arranged between a first layer and a second layer, and in the inner layer there is provided extending perpendicularly to the plane of the inner layer through the inner layer at least one cavity, on which borders externally at least sectionally and forming a connecting element, a region of the inner layer, which is connected with the first layer and the second layer. A lateral surface of the connecting element externally at least sectionally bordering the cavity has in an end region facing the first layer a rounding decreasing the cross sectional area of the cavity in the direction of the first layer, and has in an end region facing the second layer a rounding decreasing the cross sectional area of the cavity in the direction of the second layer.

99. 发明授权

US09739680B2 Flat covered leadless pressure sensor assemblies suitable for operation in extreme environments 有权
公开(公告)号：US09739680B2
公开(公告)日：2017-08-22
申请号：US15339182
申请日：2016-10-31
申请人： KULITE SEMICONDUCTOR PRODUCTS, INC.
发明人： Alexander A. Ned , Joseph R. VanDeWeert , Leo Geras
IPC分类号： G01L7/08 , G01L19/06 , G01L9/00 , G01L19/00
CPC分类号： G01L19/0681 , G01L9/0044 , G01L9/0047 , G01L9/0048 , G01L9/0054 , G01L19/0076 , G01L19/0627 , Y10T29/49826
摘要： This disclosure provides example methods, devices and systems associated with flat covered leadless pressure sensor assemblies suitable for operation in extreme environments. In one embodiment, a system may comprise a semiconductor substrate having a first side and a second side; a diaphragm disposed on the first side of the semiconductor substrate; a first cover coupled to the first side of the semiconductor substrate such that it overlays at least the diaphragm, wherein a pressure applied at the first cover is transferred to the diaphragm; and a sensing element disposed on the second side of the semiconductor substrate, wherein the sensing element is used to measure the pressure.

100. 发明申请

US20170089783A1 VARIOUS STRESS FREE SENSOR PACKAGES USING WAFER LEVEL SUPPORTING DIE AND AIR GAP TECHNIQUE 审中-公开
公开(公告)号：US20170089783A1
公开(公告)日：2017-03-30
申请号：US15373360
申请日：2016-12-08
申请人： Apple Inc.
发明人： Caleb C. Han , Tongbi Jiang , Jun Zhai
IPC分类号： G01L7/08 , B81C1/00 , B81B7/00
CPC分类号： G01L7/08 , B81B7/0048 , B81B2201/025 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81B2207/012 , B81B2207/07 , B81B2207/094 , B81C1/0023 , B81C2203/0792 , G01L9/0045 , G01L9/0048 , G01L19/0618 , G01L19/146 , G01L19/148 , H01L41/094 , H01L41/1136 , H01L2224/16225 , H01L2224/32145 , H01L2224/48095 , H01L2224/73204 , H01L2224/73265 , H01L2224/94 , H01L2924/1461 , H01L2924/16151 , H01L2924/16195
摘要： Sensor packages and manners of formation are described. In an embodiment, a sensor package includes a supporting die characterized by a recess area and a support anchor protruding above the recess area. A sensor die is bonded to the support anchor such that an air gap exists between the sensor die and the recess area. The sensor die includes a sensor positioned directly above the air gap.

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