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91. 发明公开

EP1613790A1 METHOD FOR HAFNIUM NITRIDE DEPOSITION 审中-公开
标题翻译：用于分离铪
公开(公告)号：EP1613790A1
公开(公告)日：2006-01-11
申请号：EP04759751.3
申请日：2004-03-24
申请人： APPLIED MATERIALS, INC.
发明人： METZNER, Craig , KHER, Shreyas , KIM, Yeong, Kwan , ROCKLEIN, M., Noel , GEORGE, Steven, M.
IPC分类号： C23C16/30 , C23C16/34 , H01L21/28 , H01L21/285
CPC分类号： H01L21/0228 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/45531 , H01L21/02148 , H01L21/02205 , H01L21/02208 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/318 , H01L29/513 , H01L29/517 , H01L29/518
摘要： The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.

92. 发明公开

EP1148539A3 Method of depositing low K films using an oxidizing plasma 审中-公开
标题翻译：使用氧化等离子体具有低介电常数膜的生产，
公开(公告)号：EP1148539A3
公开(公告)日：2004-12-29
申请号：EP01303567.0
申请日：2001-04-19
申请人： APPLIED MATERIALS, INC.
发明人： Huang, Tzu-Fang , Lu, Yung-Cheng , Xia, Li-Qun , Yieh, Ellie , Yau, Wai-Fan , Cheung, David W. , Willecke, Ralf B. , Liu, Kuo-Wei , Lee, Ju-Hyung , Moghadam, Farhad , Ma, Yeming Jim
IPC分类号： H01L21/316 , C23C16/40
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76829 , H01L21/76835 , H01L2221/1031
摘要： A silicon oxide layer is produced by plasma enhanced oxidation of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. Films having low moisture content and resistance to cracking are deposited-by introducing oxygen into the processing chamber at a flow rate of less than or equal to the flow rate of the organosilicon compounds, and generating a plasma at a power density ranging between 0.9 W/cm 2 and about 3.2 W/cm 2 . An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. The organosilicon compound preferably has 2 or 3 carbon atoms bonded to each silicon atom, such as trimethylsilane, (CH 3 ) 3 SiH. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.

93. 发明公开

EP1383163A3 Methods for forming silicon dioxide layers on substrates using atomic layer deposition 有权转让
标题翻译：使用原子层沉积在衬底上形成二氧化硅层的方法
公开(公告)号：EP1383163A3
公开(公告)日：2004-07-07
申请号：EP03253968.6
申请日：2003-06-24
申请人： Samsung Electronics Co., Ltd.
发明人： Lee, Joo-won , Chu, Kang-soo , Park, Jae-eun , Yang, Jong-ho
IPC分类号： H01L21/316 , C23C16/40 , C23C16/02
CPC分类号： H01L21/31612 , C23C16/402 , C23C16/45534 , C23C16/56 , H01L21/02164 , H01L21/02208 , H01L21/02277 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/3122 , H01L21/3141
摘要： Improved methods are disclosed for catalyst-assisted atomic layer deposition (ALD) to form a silicon dioxide layer having superior properties on a semiconductor substrate by using a first reactant component consisting of a silicon compound having at least two silicon atoms, or using a tertiary aliphatic amine as the catalyst component, or both in combination, together with related purging methods and sequencing.
摘要翻译：公开了改进的方法用于通过使用由具有至少两个硅原子的硅化合物组成的第一反应物组分或使用叔脂肪族化合物的催化剂辅助原子层沉积（ALD）在半导体衬底上形成具有优异性能的二氧化硅层胺作为催化剂组分，或两者结合，以及相关的清除方法和测序。

94. 发明授权

EP0442718B1 Method of manufacturing semiconductor device 失效
标题翻译：一种制造半导体器件的方法
公开(公告)号：EP0442718B1
公开(公告)日：2003-09-24
申请号：EP91301156.5
申请日：1991-02-13
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Suguro, Kyoichi, c/o Intell.Property Div. , Okano, Haruo, c/o Intell.Property Div.
IPC分类号： H01L21/768 , H01L21/316 , H01L21/76
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02208 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02271 , H01L21/02282 , H01L21/0234 , H01L21/31608 , H01L21/76879 , Y10S148/117

95. 发明公开

EP1148539A2 Method of depositing low K films using an oxidizing plasma 审中-公开
标题翻译：使用氧化等离子体具有低介电常数膜的生产，
公开(公告)号：EP1148539A2
公开(公告)日：2001-10-24
申请号：EP01303567.0
申请日：2001-04-19
申请人： APPLIED MATERIALS, INC.
发明人： Huang, Tzu-Fang , Lu, Yung-Cheng , Xia, Li-Qun , Yieh, Ellie , Yau, Wai-Fan , Cheung, David W. , Willecke, Ralf B. , Liu, Kuo-Wei , Lee, Ju-Hyung , Moghadam, Farhad , Ma, Yeming Jim
IPC分类号： H01L21/316
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76808 , H01L21/76829 , H01L21/76835 , H01L2221/1031
摘要： A silicon oxide layer is produced by plasma enhanced oxidation of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. Films having low moisture content and resistance to cracking are deposited-by introducing oxygen into the processing chamber at a flow rate of less than or equal to the flow rate of the organosilicon compounds, and generating a plasma at a power density ranging between 0.9 W/cm 2 and about 3.2 W/cm 2 . An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. The organosilicon compound preferably has 2 or 3 carbon atoms bonded to each silicon atom, such as trimethylsilane, (CH 3 ) 3 SiH. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.
摘要翻译：氧化硅层是通过等离子体增强的有机硅化合物的氧化所产生的，以沉积由atomicweight的至少1％的碳含量的薄膜。具有低水分含量和耐开裂膜沉积-通过在功率密度为0.9W之间的范围内将氧气引入所述处理腔室以小于或等于所述有机硅化合物的流速的流速，并产生等离子体/ 厘米<2>和大约3.2瓦/厘米<2>。任选的载体气体可被引入，以便于流率小于或等于所述有机硅化合物的流速的淀积工艺。的有机硅化合物优选具有键合到每个硅原子2或3个碳原子：例如三甲基硅烷（CH 3）3SiH。富含氧气的表面可以通过有机硅化合物的暂时增加氧化相邻地形成的氧化硅层。

96. 发明公开

EP1063692A1 Process for depositing a low dielectric constant film 审中-公开
标题翻译： Verfahren zur Abscheidung eines Films mit niedrigerDielektrizitätskonstante
公开(公告)号：EP1063692A1
公开(公告)日：2000-12-27
申请号：EP00112820.6
申请日：2000-06-16
申请人： Applied Materials, Inc.
发明人： Moghadam, Farhad , Cheung, David W. , Yieh, Ellie , Xia, Li-Qun , Yau, Wai-Fan , Lang, Chi-I , Jeng, Shin-Puu , Gaillard, Frederick , Venkataraman, Shankar , Nemani, Srinivas D.
IPC分类号： H01L21/316 , C23C16/40
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31053 , H01L21/3122 , H01L21/31604 , H01L21/31612 , H01L21/76828 , H01L21/76834
摘要： A method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400°C. The low dielectric constant films contain residual carbon and are useful for gap fill layers, pre-metal dielectric layers, inter-metal dielectric layers, and shallow trench isolation dielectric layers in sub-micrometer devices. The hydroxyl compound can be prepared prior to deposition from water or an organic compound. The silicon oxide layers are preferably deposited at a substrate temperature less than about 40°C onto a liner layer produced from the organosilicon compound to provide gap fill layers having a dielectric constant less than about 3.0.
摘要翻译：一种通过在低于约400℃的衬底温度下通过有机硅化合物和羟基形成化合物的反应沉积低介电常数的氧化硅层的方法。低介电常数膜含有残留的碳并且可用于间隙填充层，预金属介电层，金属间介电层和亚微米器件中的浅沟槽隔离电介质层。羟基化合物可以在从水或有机化合物沉积之前制备。氧化硅层优选在低于约40℃的衬底温度下沉积到由有机硅化合物制备的衬里层上，以提供介电常数小于约3.0的间隙填充层。

97. 发明公开

EP0430476A1 Improved silicone-polyimide material for electronic devices 失效
标题翻译： Verbessertes材料aus Silikon-Polyimidenfürelektronische Anordnungen。
公开(公告)号：EP0430476A1
公开(公告)日：1991-06-05
申请号：EP90312277.8
申请日：1990-11-09
申请人： AT&T Corp.
发明人： Wong, Ching Ping
IPC分类号： H01L21/312 , H01L23/498
CPC分类号： H01L21/02126 , H01L21/02208 , H01L21/02288 , H01L21/3121 , H01L23/49894 , H01L2924/0002 , H05K3/4676 , H01L2924/00
摘要： A dielectric layer for use in an electronic device comprises a silicone-polyimide co-polymer, which, prior to cure, has been mixed with a silane coupling agent selected from the group consisting of N-(2-aminoethyl-3-aminopropyl) trimethoxysilane and 3-mercaptopropyltrimethoxysilane.
摘要翻译：用于电子器件的电介质层包括聚硅氧烷 - 聚酰亚胺共聚物，其在固化之前已经与选自N-（2-氨基乙基-3-氨基丙基）三甲氧基硅烷的硅烷偶联剂混合和3-巯基丙基三甲氧基硅烷。

98. 发明申请

WO2016010267A1 고종횡비를 가지는 오목부 상에 절연막을 증착하는 방법 审中-公开
标题翻译：用于在具有高比例比的残余部分上沉积绝缘膜的方法
公开(公告)号：WO2016010267A1
公开(公告)日：2016-01-21
申请号：PCT/KR2015/006055
申请日：2015-06-16
申请人： 주식회사 유진테크
发明人： 김해원 , 신창훈 , 김석윤 , 정춘식
IPC分类号： H01L21/31 , H01L21/336
CPC分类号： H01L21/0234 , H01L21/02164 , H01L21/0217 , H01L21/02208 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/31111 , H01L21/473 , H01L21/76224
摘要： 본 발명의 일 실시예에 의하면, 5:1 이상의 종횡비를 갖는 오목부가 형성된 기판에서 상기 오목부 상에 절연막을 증착하는 방법은, 상기 기판이 로딩된 챔버의 내부에 실리콘 전구체를 주입하여 상기 기판 상에 실리콘을 흡착하는 흡착 단계, 상기 챔버의 내부에서 미반응 실리콘 전구체 및 반응부산물을 제거하는 제1 퍼지 단계, 상기 챔버의 내부에 제1 반응 소스를 공급하여 흡착된 상기 실리콘을 실리콘이 포함되는 절연막으로 형성하는 반응 단계 및 상기 챔버의 내부에서 미반응의 제1 반응 소스와 반응 부산물을 제거하는 제2 퍼지 단계를 수행하는 절연막 증착 단계; 그리고 RF 전원을 인가하여 상기 챔버의 내부에 플라즈마 분위기를 형성하고 상기 플라즈마 분위기를 이용하여 상기 실리콘이 포함되는 절연막을 치밀하게 만드는 치밀화 단계를 포함하되, 상기 RF 전원의 주파수는 400kHz 내지 2MHz이다.
摘要翻译：根据本发明的一个实施例，一种用于在其中形成具有5:1或更大的纵横比的凹陷部分的基底中的凹部上沉积绝缘膜的方法包括：绝缘膜沉积步骤进行吸附步骤，将硅前体注入到其中负载衬底以使硅吸附到衬底上的室中，从室的内部除去未反应的硅前体和反应副产物的第一吹扫步骤，反应通过将作为包括硅的绝缘膜的第一反应源提供到室的内部，形成硅的步骤，以及从第二反应源的内部除去未反应的第一反应源和反应副产物的第二吹扫步骤室; 以及致密化步骤，通过向其中施加RF功率而在室内形成等离子体气氛，并且通过使用等离子体气氛使包括硅的绝缘膜致密化，其中RF功率的频率范围为400kHz至2MHz。

99. 发明申请

WO2015095845A1 CYCLOPENTADIENYL TITANIUM ALKOXIDES WITH OZONE ACTIVATED LIGANDS FOR ALD OF TIO2 审中-公开
标题翻译：具有OZONE激活配位体的二环戊二烯氧化钛对于TIO2的ALD
公开(公告)号：WO2015095845A1
公开(公告)日：2015-06-25
申请号：PCT/US2014/071754
申请日：2014-12-20
申请人： ENTEGRIS, INC.
发明人： CAMERON, Thomas, M. , HUNKS, William
IPC分类号： C07F7/28 , C23C16/18 , C23C14/22 , C23C14/12
CPC分类号： C23C16/45553 , C01G23/07 , C07F7/28 , C07F17/00 , C23C16/405 , H01L21/02186 , H01L21/02208 , H01L21/02271
摘要： An organotitanium compound selected from the group consisting of: (i) organotitanium compounds of Formulae (I): wherein: each of R 0 , R 1 and R 2 is the same as or different from the others, and each is independently selected from organo substituents containing olefinic or alkynyl unsaturation; and each of R 3 , R 4 , R 5 , R 6 , and R 7 is the same as or different from the others, and each is independently selected from H, C 1 -C 12 alkyl, and substituents containing olefinic or alkynyl unsaturation; (ii) organotitanium compounds including at least one tris(alkylaminoalkyl)amine ligand and at least one dialkylamine ligand, wherein alkyl is C 1 -C 6 alkyl; and (iii) organotitanium compounds including a cyclopentadienyl ligand, and a cyclic dienyl or trienyl ligand other than cyclopentadienyl Such organotitanium compounds are usefully employed in vapor deposition processes for depositing titanium on substrates, e.g., in the manufacture of microelectronic devices and microelectronic device precursor structures.
摘要翻译：选自以下的有机钛化合物：（i）式（I）的有机钛化合物：其中：R 0，R 1和R 2各自与其它相同或不同，并且各自独立地选自含有烯烃的有机基取代基或炔基不饱和度; R 3，R 4，R 5，R 6和R 7中的每一个与其它相同或不同，各自独立地选自H，C1-C12烷基和含有烯属或炔基不饱和键的取代基; （ii）包括至少一种三（烷基氨基烷基）胺配体和至少一种二烷基胺配体的有机钛化合物，其中烷基是C 1 -C 6烷基; 和（iii）包括环戊二烯基配位体和除环戊二烯基以外的环状二烯基或三烯基配位体的有机钛化合物这种有机钛化合物可用于蒸镀沉积工艺中用于在基底上沉积钛，例如在制造微电子器件和微电子器件前体结构。

100. 发明申请

WO2014077210A1 半導体装置及びその製造方法审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2014077210A1
公开(公告)日：2014-05-22
申请号：PCT/JP2013/080389
申请日：2013-11-11
申请人：ピーエスフォールクスコエスエイアールエル , 呉楠
发明人：呉　楠
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L27/10885 , H01L21/02164 , H01L21/02208 , H01L21/02271 , H01L21/02282 , H01L21/31111 , H01L27/10805 , H01L27/10873 , H01L27/10891 , H01L27/10894
摘要：　半導体装置は、半導体基板上のメモリセル領域に配置されたビット線と、半導体基板上の周辺回路領域に配置された周辺回路用トランジスタのゲート電極と、を有する。ゲート電極の側面には複数層のサイドウォール絶縁膜が設置され、ビット線の側面には単層のサイドウォール絶縁膜が設置されている。
摘要翻译：该半导体器件包括：布置在半导体衬底上的存储单元区域中的位线; 以及配置在半导体基板的外围电路区域中的用于外围电路的晶体管的栅电极。栅电极的侧表面设置有多个侧壁绝缘膜，而位线的侧表面设置有单个侧壁绝缘膜。

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