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    • 91. 发明申请
    • ELECTRONIC ALTERNATING VOLTAGE SWITCH
    • 电子交流电源开关
    • WO00003483A1
    • 2000-01-20
    • PCT/DE1999/000385
    • 1999-02-10
    • H03K17/687H03K17/689H03K17/785
    • H03K17/785H03K17/6874H03K17/6895
    • Mechanical alternating voltage switches are generally used to switch alternating voltages. Since electronics has been successfully introduced to various fields including car manufacturing, there is a need to develop high power electronic alternating voltage switches. The invention relates to an electronic alternating voltage switch with the following features: two series-connected MOS transistors (20, 30; 20, 30'), whereby an alternating voltage thus applied can be blocked and conducted; at least one device (24, 27, 34, 37, 24', 34', 60) that is linked to the gateway connections of the MOS transistors for the storage of charges; whereby a charge supplying device (40, 50; 50) is associated with each charge storage device (24, 27, 34, 37; 24', 34', 60) in order to supply a predetermined amount of charge to said charge storage device (24, 34, 37; 24', 34'), corresponding to a first switching state, and in order to remove a predetermined amount of charge, corresponding to a second switching state.
    • 用于切换大交流电压主要机械交流电压开关。 但是,随着电子技术的如此成功采取了许多领域,包括汽车领域的集合,有必要大力发展电子交流电压开关高性能。 为了这个目的,本发明提出了一种具有以下特征的电子AC电压开关它:两个串联连接的MOS晶体管(20,30; 20”,30' ),使得它们可以阻断所施加的交流电压和发送,至少一个,来的栅极端子 在通信装置的MOS晶体管(24,27,34,37; 24 '34' ,60),用于存储电荷,每一个电荷存储装置(24,27,34,37; 24',34' ,60) 用于电荷存储装置上施加电荷的预定量;相应于第一开关状态和用于从电荷存储装置移除电荷的预定量时,第二开关状态;充电供给装置(50 40,50)(24,34 24”,34' ) 相当于分配。
    • 92. 发明申请
    • CIRCUIT PROTECTION ARRANGEMENT
    • 电路保护装置
    • WO1993001639A1
    • 1993-01-21
    • PCT/GB1992001237
    • 1992-07-08
    • RAYCHEM LIMITEDPRYOR, Dennis, MalcolmCHALLIS, Michael
    • RAYCHEM LIMITED
    • H02H03/087
    • H02H3/087H02H9/025H03K17/0822H03K17/785
    • An arrangement that is intended to be series connected in a line of an electrical circuit for protecting the circuit from an overcurrent, comprises a depletion mode FET (1) that switches the line current and a control device (4) that is connected across a resistance in the line, preferably the channel resistance of the FET (1), and will bias the gate of the FET (1) in response to the voltage difference across the resistance in order to switch the FET off when the arrangement is subjected to an overcurrent in the line. The arrangement has the advantage that since the FET (1) is normally on, there is no initial voltage drop across the arrangement before it becomes conductive so that the arrangement can be substantially linear.
    • 旨在串联连接在用于保护电路免于过电流的电路线路中的装置包括切换线路电流的耗尽型FET(1)和跨过电阻连接的控制装置(4) 在线路中,优选地是FET(1)的沟道电阻,并且将响应于跨过电阻的电压差而偏压FET(1)的栅极,以便在该布置经受过电流时切断FET 在线 该布置的优点在于,由于FET(1)通常导通,所以在布置变得导通之前,不存在初始的电压降,使得该布置可以是基本上线性的。
    • 95. 发明公开
    • 리모트 콘트롤러
    • 遥控器
    • KR1020110137965A
    • 2011-12-26
    • KR1020100058005
    • 2010-06-18
    • 어보브반도체 주식회사
    • 김사현
    • H04Q9/04H03K17/785
    • H04Q9/04H03K17/785H04Q2209/80
    • PURPOSE: A remote controller is provided to control each NMOS(N-channel Metal Oxide Semiconductor) transistors in orders. CONSTITUTION: A remote control transmission signal generating unit(222) generates a remote control transmission signal(Rs) by receiving the control signal. An output switch circuit unit(223) has a plurality of switching transistors. The output switch circuit unit generates an output current to an output terminal(P) according to the switching operation. A power supply voltage sense driving control unit(220a) receives a remote control transmission signal. The power supply voltage sense driving control unit realizes selective switching operation about a plurality of switching transistors of the output switch circuit unit.
    • 目的:提供遥控器以按顺序控制每个NMOS(N沟道金属氧化物半导体)晶体管。 构成:遥控发送信号生成部(222)通过接收控制信号来生成遥控发送信号(Rs)。 输出开关电路单元(223)具有多个开关晶体管。 输出开关电路单元根据开关动作向输出端子(P)产生输出电流。 电源电压检测驱动控制单元(220a)接收遥控发送信号。 电源电压检测驱动控制单元实现关于输出开关电路单元的多个开关晶体管的选择性开关操作。
    • 98. 发明申请
    • HIGH SPEED SWITCHING SOLID STATE RELAY CIRCUIT
    • 高速开关固态继电器电路
    • WO2016179553A1
    • 2016-11-10
    • PCT/US2016/031334
    • 2016-05-06
    • QM POWER, INC.
    • FLYNN, CharlesTRACY, CooperHUNTER, Scott
    • H02H7/10
    • H03K17/785H02J4/00H02M1/32H02M7/2176H02M2005/2937H03K17/6871
    • The invention discloses a high speed switching solid state relay circuit with a switching section, a current limiting section and a voltage limiting section. The switching section comprises a bridge rectifier receiving the load voltage inputs, a MOSFET with a source connected to the negative voltage of the load through the bridge rectifier, a drain connected to the load voltage output, and a gate. The switching section further includes an isolator circuit comprising an optically-coupled LED. The isolator circuit is configured to receive a logic input signal and generate an isolated output signal based on the logic input signal, and the gate of the MOSFET is driven by the isolated output signal. The current limiting section includes a first set of resistors connecting the voltage drop across the load to the gate of the MOSFET through diodes. The voltage limiting section comprises a Zener diode connected to the gate of the MOSFET.
    • 本发明公开了一种具有开关部分,限流部分和限压部分的高速开关式固态继电器电路。 开关部分包括接收负载电压输入的桥式整流器,具有通过桥式整流器连接到负载的负电压的源极的MOSFET,连接到负载电压输出的漏极和栅极。 切换部分还包括隔离器电路,其包括光耦合LED。 隔离器电路被配置为接收逻辑输入信号并且基于逻辑输入信号产生隔离的输出信号,并且MOSFET的栅极由隔离的输出信号驱动。 电流限制部分包括第一组电阻器,其通过二极管将负载两端的压降连接到MOSFET的栅极。 电压限制部分包括连接到MOSFET的栅极的齐纳二极管。