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91. 发明专利

JPH07193065A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH07193065A
公开(公告)日：1995-07-28
申请号：JP33128893
申请日：1993-12-27
申请人： NEC CORP
发明人： SUGAI KAZUMI
IPC分类号： H01L23/52 , C23C16/02 , C23C16/12 , H01L21/205 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/522
摘要： PURPOSE:To obtain a smooth and thick aluminum film by a method wherein a process in which an aluminum film having a thickness not larger than a specific value is formed on a substrate surface covered with a titanium film by vapor phase chemical growth using organic aluminum gas and a process in which the temperature of the substrate is elevated are repeated a plurality of times. CONSTITUTION:A first aluminum film 4 having a thickness not larger than 0.2mum is formed by vapor phase chemical growth using dimethyl aluminum hydride over the whole surface of a silicon substrate 1 on which a silicon oxide film 2 and a titanium film 3 are formed. Then, if the temperature of the substrate 1 is elevated, titanium atoms in the titanium foundation film 3 are partially diffused and Ti is deposited on the surface of the first aluminum film 4. Then the vapor phase chemical growth using dimethyl aluminum hydride is performed again under the same conditions to deposit a second aluminum film 6 having a thickness not larger than 0.2mum with the Ti 5 as cores. Successively, the temperature elevating process and the vapor phase chemical process are repeated a plurality of times to form an aluminum film 7 having a smooth surface appearance.

92. 发明专利

JPH06267957A FORMING METHOD OF METALLIC FILM 失效
公开(公告)号：JPH06267957A
公开(公告)日：1994-09-22
申请号：JP5423393
申请日：1993-03-15
申请人： KAWASAKI STEEL CO
发明人： YAMAMOTO HIROSHI , KONDO HIDEKAZU , OOTA TOMOHIRO
IPC分类号： C23C16/12 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/90
摘要： PURPOSE:To provide a forming method of metallic film capable of selectively and evenly depositing an Al metallic film containing a specific element such as Cu. CONSTITUTION:A wiring metallic film 3 comprising AlCu is formed on an SiO2 film further to form an interlayer insulating film 4 comprising SiO2 on this wiring metallic film 3. This insulating film 4 is selectively removed to form a via hole 4a. Next, DMAH gas is fed to selectively form a buried plug 5 comprising pure Al inside this via hole 4a. Next, the feeding of the DMAH gas is stopped to be substituted with CpCuTEP gas to form a Cu film 6. Later, the mixed gas of the DMAH gas and the CpCuTEP gas is fed so as to evenly form the second wiring metallic film 7 comprising AlCu on the Cu film 6.

93. 发明专利

JPH0610352B2 失效
公开(公告)号：JPH0610352B2
公开(公告)日：1994-02-09
申请号：JP19773786
申请日：1986-08-22
申请人： ULVAC CORP
发明人： KUSUMOTO TOSHIO , TAKAKUWA KAZUO , IKUTA TETSUYA , SUZUKI AKITOSHI , NAKAYAMA IZUMI
IPC分类号： H01L21/285 , C23C16/10 , C23C16/12 , C23C16/14 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/46

94. 发明专利

JPH01179416A ALUMINUM ALLOY WIRING FORMING METHOD 失效
公开(公告)号：JPH01179416A
公开(公告)日：1989-07-17
申请号：JP134288
申请日：1988-01-08
申请人： RICOH KK
发明人： AKIYAMA ZENICHI
IPC分类号： H01L21/285 , C07F5/06 , C23C16/12 , H01L21/28 , H01L21/3205 , H01L23/52
摘要： PURPOSE:To form an aluminum alloy wiring having excellent electromigration characteristics by a method wherein an aluminum alloy thin film is formed on a substrate by conducting a CVD method using aluminum alkoxide and an alkoxide compound as raw gas. CONSTITUTION:The aluminum alloy wiring of a semiconductor device is formed on a semiconductor substrate or an insulative substrate. At that time, an aluminum alloy thin film is formed on the substrate by conducting a CVD method using the metal alkoxide compound M(OR)n containing an alloy element which will be alloyed with aluminum alkoxide Al(OR)n and aluminum. R indicates the alkyl radical such as CH3-, C2H5- and C3H7 and the like. M indicates the metal such as As, B, Be, Bi, Ce, Hf and the like. As a result, the aluminum alloy wiring having excellent electromigration characteristics can be formed.

95. 发明专利

JPS6219503B2 失效
公开(公告)号：JPS6219503B2
公开(公告)日：1987-04-28
申请号：JP6290582
申请日：1982-04-14
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： SHIMIZU YASUHIRO , DOI AKIRA , FUJIMORI NAOHARU , TAKAHASHI KUNIHIRO
IPC分类号： C23C14/06 , B23P15/28 , C23C12/00 , C23C14/02 , C23C14/48 , C23C16/02 , C23C16/12 , C23C16/34 , C23C28/00

96. 发明专利

JPS61189689A METAL FOIL FOR PRINTED CIRCUIT 失效
公开(公告)号：JPS61189689A
公开(公告)日：1986-08-23
申请号：JP2998085
申请日：1985-02-18
申请人： HITACHI CABLE
发明人： KAMATA OSAO , KOGA MASAOMI , SANKI SADAHIKO
IPC分类号： H05K3/38 , C23C14/14 , C23C14/16 , C23C16/12 , H05K1/09

97. 发明专利

JPS5948952B2 JPS5948952B2 - 失效
公开(公告)号：JPS5948952B2
公开(公告)日：1984-11-29
申请号：JP4220981
申请日：1981-03-23
申请人： Fujitsu Ltd
发明人： ITO TAKASHI
IPC分类号： C23C16/12 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/7684 , C23C16/12 , H01L21/28512 , H01L21/32051

98. 发明专利

JPS5618671B2 失效
公开(公告)号：JPS5618671B2
公开(公告)日：1981-04-30
申请号：JP1290577
申请日：1977-02-08
IPC分类号： C23C16/12 , C23C10/08 , C23C10/48 , C23C10/50 , C23C16/04

99. 发明专利

JPS50127896A 失效
公开(公告)号：JPS50127896A
公开(公告)日：1975-10-08
申请号：JP3212475
申请日：1975-03-17
IPC分类号： C01F7/02 , C01F7/30 , C23C16/12 , C30B25/00 , C30B29/20 , C30B29/62

100. 发明申请

WO2022177884A1 REDUCING AGENTS FOR ATOMIC LAYER DEPOSITION 审中-公开
公开(公告)号：WO2022177884A1
公开(公告)日：2022-08-25
申请号：PCT/US2022/016412
申请日：2022-02-15
申请人： APPLIED MATERIALS, INC.
发明人： BHUYAN, Bhaskar Jyoti , SALY, Mark , KALUTARAGE, Lakmal C. , KNISLEY, Thomas
IPC分类号： C23C16/455 , C23C16/14 , C23C16/12 , C23C16/30 , C23C16/56
摘要： Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound.

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