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    • 13. 发明申请
    • BOLOMETER AND PREPARATION METHOD THEREOF
    • BOLOMETER及其制备方法
    • US20150021479A1
    • 2015-01-22
    • US14353020
    • 2012-07-25
    • Jian CaiQian WangZiyu LiuYang Hu
    • Jian CaiQian WangZiyu LiuYang Hu
    • H05K1/11G01J5/24H01L27/146G01J5/10
    • H05K1/115G01J5/00G01J5/02G01J5/10G01J5/20G01J5/24H01L21/6835H01L23/481H01L27/1443H01L27/14683H01L31/02005H01L2221/68327H01L2221/6834H01L2221/68354H01L2224/11002H05K2201/032H05K2201/0329
    • A bolometer and a preparation method thereof. The bolometer includes: an infrared detection element (1) and a readout circuit (2), wherein the infrared detection element (1) is formed on one side of a first substrate (100), and an edge of the infrared detection element (1) is provided with an electrode hole (9), and the readout circuit (2) is formed on one side of a second substrate (200) and the readout circuit (2) has an electrode, the first substrate (100) is formed thereon with a silicon via (8) passing through the first substrate (100) and filed with a conductive material, the electrode hole (9) of the infrared detection element (1) is electrically connected to the electrode of the readout circuit (2) via the conductive material filled in the silicon via (8). The following defects are overcome: bolometers in the prior art need to flatten the silicon wafer surface with a suitable chemical-mechanical polishing process after a readout circuit thereof has been manufactured, the circuit is large in area, and the requirements of the system integration process are high.
    • 测辐射热谱仪及其制备方法。 测辐射热计包括:红外线检测元件(1)和读出电路(2),其中红外线检测元件(1)形成在第一基板(100)的一侧,红外线检测元件(1)的边缘 )设置有电极孔(9),读出电路(2)形成在第二基板(200)的一侧,读出电路(2)具有电极,第一基板(100)形成在其上 通过硅通孔(8)穿过第一衬底(100)并放置导电材料,红外线检测元件(1)的电极孔(9)经由读出电路(2)的电极经由 填充在硅通孔(8)中的导电材料。 克服了以下缺陷:现有技术中的辐射热测量仪在其制造的读出电路之后需要用合适的化学机械抛光工艺来平坦化硅晶片表面,电路面积大,并且系统集成工艺的要求 很高
    • 20. 发明申请
    • Nanoelectronic sensor with integral suspended micro-heater
    • 纳米电子传感器与集成悬浮微型加热器
    • US20070045756A1
    • 2007-03-01
    • US11488465
    • 2006-07-18
    • Ying-Lan ChangJean-Christophe GabrielSergei SkarupoAlexander StarChristian ValckeQian Wang
    • Ying-Lan ChangJean-Christophe GabrielSergei SkarupoAlexander StarChristian ValckeQian Wang
    • H01L29/82
    • G01K5/486B82Y10/00B82Y15/00G01K2211/00
    • A nanoelectronic sensing device includes a substrate, a nanostructure element disposed adjacent the substrate, and at least a conductive element electrically connected to the nanostructure element. The device is configured to heat at least a portion of the sensor structure including the nanostructure element. In certain embodiments, the nanostructure element comprises at least one nanotube, the nanotube being electrically connected to at least two conductors so as to permit an electric current on the order of 10 microAmps or greater to be passed through the nanotube, causing the nanotube to heat up relative to the substrate. In alternative embodiments, the sensing device includes a platform or membrane which is at least partially thermally isolated by one or more cavities, the platform supporting at least the nanostructure element adjacent to a microheater element. The heating of the sensor structure may be employed, for example, for thermoregulation, to accelerate and/or increase sensor response, and to improve other sensor characteristics.
    • 纳米电子感测装置包括衬底,邻近衬底设置的纳米结构元件和至少导电元件,电连接到纳米结构元件。 该装置构造成加热包括纳米结构元件的传感器结构的至少一部分。 在某些实施例中,纳米结构元件包括至少一个纳米管,纳米管电连接到至少两个导体,以便允许10微安或更大量级的电流通过纳米管,导致纳米管加热 相对于基底。 在替代实施例中,感测装置包括至少部分地通过一个或多个空腔热隔离的平台或膜,所述平台支撑至少与微加热器元件相邻的纳米结构元件。 可以采用传感器结构的加热,例如用于温度调节,加速和/或增加传感器响应,并改善其它传感器特性。