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11. 发明申请

US20130190036A1 MULTI-MODE BYPASS DRIVER AMPLIFIER WITH TUNABLE LOAD MATCHING 有权
标题翻译：多模式旁路驱动放大器，具有可调载荷匹配
公开(公告)号：US20130190036A1
公开(公告)日：2013-07-25
申请号：US13356492
申请日：2012-01-23
申请人： Yu Zhao , Nathan M. Pletcher
发明人： Yu Zhao , Nathan M. Pletcher
IPC分类号： H04W88/02
CPC分类号： H03F1/0277 , H03F1/565 , H03F3/195 , H03F3/211 , H03F3/245 , H03F3/72 , H03F2200/213 , H03F2200/222 , H03F2200/318 , H03F2200/378 , H03F2200/387 , H03F2200/411 , H03F2203/21136 , H03F2203/21175 , H03F2203/7233 , H03F2203/7239
摘要： A multi-mode driver amplifier with tunable load matching is disclosed. In an exemplary design, an apparatus includes a multi-mode driver amplifier and a tunable impedance matching circuit. The driver amplifier amplifies an input radio frequency (RF) signal and provides an amplified RF signal. The tunable impedance matching circuit matches an output impedance of the driver amplifier. The apparatus may include a main transmit path and a bypass transmit path. The bypass transmit path may include the driver amplifier and the tunable impedance matching circuit and no power amplifier. The main transmit path may include a second driver amplifier and a power amplifier. The main transmit path may be selected for transmit power levels higher than a threshold level, and the bypass transmit path may be selected for transmit power levels lower than the threshold level.
摘要翻译：公开了一种具有可调负载匹配的多模驱动放大器。在示例性设计中，装置包括多模式驱动器放大器和可调谐阻抗匹配电路。驱动器放大器放大输入射频（RF）信号并提供放大的RF信号。可调阻抗匹配电路匹配驱动器放大器的输出阻抗。该装置可以包括主发射路径和旁路发射路径。旁路发射路径可以包括驱动放大器和可调谐阻抗匹配电路，而不包括功率放大器。主发射路径可以包括第二驱动放大器和功率放大器。可以为高于阈值电平的发射功率电平选择主发射路径，并且可以选择低于阈值电平的发射功率电平的旁路发射路径。

12. 发明申请

US20110037519A1 AMPLIFIER WITH VARIABLE MATCHING CIRCUIT TO IMPROVE LINEARITY 有权
标题翻译：具有可变匹配电路的放大器，以提高线性度
公开(公告)号：US20110037519A1
公开(公告)日：2011-02-17
申请号：US12699659
申请日：2010-02-03
申请人： Nathan M. Pletcher , Yu Zhao
发明人： Nathan M. Pletcher , Yu Zhao
IPC分类号： H03F3/16
CPC分类号： H03F1/565 , H03F1/086 , H03F3/193
摘要： Techniques for reducing distortion and improving linearity of amplifiers are described. In an exemplary design, an apparatus includes a driver amplifier, a variable matching circuit, and a power amplifier. The driver amplifier amplifies a first RF signal and provides a second RF signal. The variable matching circuit receives the second RF signal and provides a third RF signal. The power amplifier amplifies the third RF signal and provides a fourth RF signal. The variable matching circuit matches a fixed impedance at the output of the driver amplifier to a variable impedance at the input of the power amplifier in order to improve the linearity of the amplifiers. In an exemplary design, the power amplifier includes a first transistor (e.g., an NMOS transistor) of a first type, and the variable matching circuit includes a second transistor (e.g., a PMOS transistor) of a second type that is different from the first type.
摘要翻译：描述了减小失真和提高放大器线性度的技术。在示例性设计中，装置包括驱动器放大器，可变匹配电路和功率放大器。驱动器放大器放大第一RF信号并提供第二RF信号。可变匹配电路接收第二RF信号并提供第三RF信号。功率放大器放大第三RF信号并提供第四RF信号。可变匹配电路将驱动放大器输出端的固定阻抗与功率放大器输入端的可变阻抗相匹配，以提高放大器的线性度。在示例性设计中，功率放大器包括第一类型的第一晶体管（例如，NMOS晶体管），并且可变匹配电路包括与第一类型不同的第二类型的第二晶体管（例如，PMOS晶体管）类型。

13. 发明申请

US20110043284A1 STACKED AMPLIFIER WITH DIODE-BASED BIASING 有权
标题翻译：基于二极管偏置的堆叠放大器
公开(公告)号：US20110043284A1
公开(公告)日：2011-02-24
申请号：US12711858
申请日：2010-02-24
申请人： Yu Zhao , Nathan M. Pletcher
发明人： Yu Zhao , Nathan M. Pletcher
IPC分类号： H03F3/16
CPC分类号： H03F1/0283 , H03F1/301 , H03F3/189
摘要： Techniques for improving linearity of amplifiers are described. In an exemplary design, an amplifier (e.g., a power amplifier) may include a plurality of transistors coupled in a stack and at least one diode. The plurality of transistors may receive and amplify an input signal and provide an output signal. The at least one diode may be operatively coupled to at least one transistor in the stack. Each diode may provide a variable bias voltage to an associated transistor in the stack. Each diode may have a lower voltage drop across the diode at high input power and may provide a higher bias voltage to the associated transistor at high input power. The at least one transistor may have higher gain at high input power due to the higher bias voltage from the at least one diode. The higher gain may improve the linearity of the amplifier.
摘要翻译：描述了用于提高放大器线性度的技术。在示例性设计中，放大器（例如，功率放大器）可以包括耦合在堆叠中的多个晶体管和至少一个二极管。多个晶体管可以接收和放大输入信号并提供输出信号。至少一个二极管可以可操作地耦合到堆叠中的至少一个晶体管。每个二极管可以向堆叠中的相关联的晶体管提供可变偏置电压。每个二极管可以在高输入功率下在二极管上具有较低的电压降，并且可以在高输入功率下向相关联的晶体管提供更高的偏置电压。由于来自至少一个二极管的较高偏置电压，至少一个晶体管可能在高输入功率下具有更高的增益。较高的增益可以提高放大器的线性度。

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