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11. 发明公开

CN106253884A 一种浪涌保护红外防盗报警系统无效
公开(公告)号：CN106253884A
公开(公告)日：2016-12-21
申请号：CN201610704257.4
申请日：2016-08-22
申请人：成都零一智慧科技有限公司
发明人：向勇 , 闫宗楷 , 朱焱麟 , 王彦
IPC分类号： H03K17/081 , H03K17/78
CPC分类号： H03K17/08112 , H03K17/78
摘要：本发明公开了一种浪涌保护红外防盗报警系统，其特征在于：主要由报警器BL，光电耦合器U，三极管VT3，三极管VT4，三极管VT5，三极管VT7，串接在三极管VT3的发射极和光电耦合器U的第二输入端之间的电阻R6等组成。本发明拥有较强的抗共模干扰能力，能够很好的抑制干扰，并且不受系统自身电磁干扰的影响，与传统的红外报警系统相比，其稳定性更高，相对于传统的红外报警系统容易出现误报警的情况，本发明能在现有在报警准确率仅有80％的情况下将该报警准确率提高到95％以上。同时，本发明可以对生产的流涌电压和浪涌电流进行抑制，使电压和电流保持在安全的范围内，从而保护电子元件不被损坏。

12. 发明公开

CN104348338A 半导体元件模块和栅极驱动电路失效
公开(公告)号：CN104348338A
公开(公告)日：2015-02-11
申请号：CN201410369596.2
申请日：2014-07-30
申请人：株式会社电装
发明人：三浦亮太郎 , 后藤崇
IPC分类号： H02M1/08
CPC分类号： H03K17/08112 , H03K17/167 , H03K17/168 , H02M1/082
摘要：本发明涉及半导体元件模块和栅极驱动电路。所述半导体元件模块(1、21、31)包括驱动元件(2)和电压变化检测元件(3)，每个所述电压变化检测元件(3)由电压驱动半导体元件形成。所述电压变化检测元件检测所述驱动元件的集电极与发射极之间或漏极与源极之间的电压的变化。所述电压变化检测元件的集电极或漏极连接到所述驱动元件的集电极或漏极，并且所述电压变化检测元件的栅极连接到所述电压变化检测元件的发射极或源极。所述电压变化检测元件的发射极或源极被提供为检测端子(S)。

13. 发明公开

CN102195624A 传感器用输出IC以及传感器装置有权
公开(公告)号：CN102195624A
公开(公告)日：2011-09-21
申请号：CN201010609534.6
申请日：2010-12-28
申请人：欧姆龙株式会社
发明人：小西康允
IPC分类号： H03K17/08 , H03K17/722
CPC分类号： H03K17/08112 , H03K17/08126
摘要：本发明的传感器用输出IC以及传感器装置比以往更加抑制传感器装置的电路规模以及制造成本，并且实现负载短路保护功能。传感器用输出IC(10)包括用于基于来自传感器的检测信号，使输出端子之间导通/截止的输出用晶体管(11)。传感器用输出IC(10)包括：温度限制电路(13)，若传感器用输出IC(10)内的温度成为规定值以上，则将输出用晶体管(11)维持为截止状态；以及电压限制电路(15)，将输出用晶体管(11)的基极电位(VB)限制为规定值以下。

14. 发明申请

US20160277017A1 SNUBBER CIRCUIT 审中-公开
标题翻译： SNUBBER电路
公开(公告)号：US20160277017A1
公开(公告)日：2016-09-22
申请号：US15166236
申请日：2016-05-26
申请人： FSP TECHNOLOGY INC.
发明人： Kuo-Fan Lin
IPC分类号： H03K17/081 , H01L21/56 , H02M1/34 , H01L23/00 , H01L23/31
CPC分类号： H03K17/08112 , H01L21/56 , H01L23/3107 , H01L23/4952 , H01L23/49562 , H01L23/49589 , H01L23/62 , H01L24/06 , H01L24/09 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L25/16 , H01L25/18 , H01L2224/0401 , H01L2224/04042 , H01L2224/0603 , H01L2224/13111 , H01L2224/1403 , H01L2224/14051 , H01L2224/16106 , H01L2224/16225 , H01L2224/16245 , H01L2224/1703 , H01L2224/29339 , H01L2224/32013 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48106 , H01L2224/4813 , H01L2224/4816 , H01L2224/48175 , H01L2224/48247 , H01L2224/49107 , H01L2224/49113 , H01L2224/73265 , H01L2924/00014 , H01L2924/1203 , H01L2924/12035 , H01L2924/1205 , H01L2924/1206 , H01L2924/1207 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13063 , H01L2924/13091 , H01L2924/181 , H01L2924/3011 , H02M1/34 , H02M2001/344 , H03K17/08104 , H03K17/08116 , H01L2924/00012 , H01L2924/00 , H01L2224/05599
摘要： A snubber circuit is provided. The snubber circuit includes a transistor structure and a first capacitor. The transistor structure includes a chip package and two pins. The chip package includes a transistor die and a molding compound encapsulating the transistor die. A first pin of the two pins is electrically connected to a first bonding pad and a second bonding pad of the transistor die, and a second pin of the two pins is electrically connected to a third bonding pad of the transistor die. The first pin or the second pin of the transistor structure is electrically connected to a terminal of the first capacitor.
摘要翻译：提供缓冲电路。缓冲电路包括晶体管结构和第一电容器。晶体管结构包括芯片封装和两个引脚。芯片封装包括晶体管管芯和封装晶体管管芯的模塑料。两个引脚的第一引脚电连接到晶体管管芯的第一焊盘和第二接合焊盘，并且两个引脚的第二引脚电连接到晶体管管芯的第三焊盘。晶体管结构的第一引脚或第二引脚电连接到第一电容器的端子。

15. 发明授权

US5132566A BiMOS semiconductor integrated circuit having short-circuit protection 失效
标题翻译： BiMOS半导体集成电路具有短路保护功能
公开(公告)号：US5132566A
公开(公告)日：1992-07-21
申请号：US557990
申请日：1990-07-25
申请人： Akira Denda
发明人： Akira Denda
IPC分类号： H03K19/003 , H03K17/081 , H03K19/088
CPC分类号： H03K17/08112
摘要： An output circuit capable of limiting an output current from a BiMOS semiconductor integrated circuit without adversely affecting an operational speed includes a plurality of bipolar transistors connected to form a Darlington circuit and at least one field effect transistor which can be either a P-channel or an N-channel transistor. The circuit is capable of removing rise current limitations of the bipolar transistors in the Darlington circuit during a normal operation by using a single MOS transistor to provide a branch circuit for the Darlington circuit, which limits the output current of the circuit under the specific condition that it provides a high level output and its output terminal is short-circuited to the ground.
摘要翻译：能够限制来自BiMOS半导体集成电路的输出电流而不会不利地影响操作速度的输出电路包括连接形成达林顿电路的多个双极晶体管和至少一个场效应晶体管，其可以是P沟道或 N沟道晶体管。该电路能够在正常操作期间消除达林顿电路中的双极晶体管的上升电流限制，通过使用单个MOS晶体管为达林顿电路提供分支电路，这限制了在特定条件下电路的输出电流，它提供高电平输出，其输出端短路到地。

16. 发明授权

EP2367288B1 Sensor output IC and sensor device 有权
标题翻译：传感器用输出IC以及传感器装置
公开(公告)号：EP2367288B1
公开(公告)日：2014-09-03
申请号：EP10189085.3
申请日：2010-10-27
申请人： Omron Corporation
发明人： Konishi, Yasuchika
IPC分类号： H03K17/081 , H03K17/0812
CPC分类号： H03K17/08112 , H03K17/08126

17. 发明公开

EP0388896A2 Buffer circuit with an electrostatic protector 失效
标题翻译： Pufferschaltung mit einem elektrostatischen Schutz。
公开(公告)号：EP0388896A2
公开(公告)日：1990-09-26
申请号：EP90105250.6
申请日：1990-03-20
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Itoh, Masashi, c/o Intellectual Property Division
IPC分类号： H03K17/08
CPC分类号： H03K17/08112 , H03K17/16 , H03K17/603 , H03K17/6242 , H03K17/6271
摘要： A buffer circuit comprises an interface node (IN, OUT), a bipolar transistor (Q₁, Q₂) having a collector connected to a first power source (Vcc), an emitter connected to a second power source (GND), and a base, for transferring a signal supplied to and from the interface node, and a diode structure (D) formed between the emitter and base of the bipolar transistor (Q₁, Q₂), the diode structure containing a PN junction reversely coupled across the emitter-base junction of the bipolar transistor (Q₁, Q₂).
摘要翻译：缓冲电路包括接口节点（IN，OUT），具有连接到第一电源（Vcc）的集电极的双极晶体管（Q1，Q2），连接到第二电源（GND）的发射极，用于传送提供给接口节点和从接口节点提供的信号;以及二极管结构（D），形成在双极晶体管（Q1，Q2）的发射极和基极之间，二极管结构包含反向耦合在发射极 - 基极结的双极晶体管（Q1，Q2）。

18. 发明公开

EP0388896A3 Buffer circuit with an electrostatic protector 失效
标题翻译：缓冲电路与静电保护器
公开(公告)号：EP0388896A3
公开(公告)日：1991-10-09
申请号：EP90105250.6
申请日：1990-03-20
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Itoh, Masashi, c/o Intellectual Property Division
IPC分类号： H03K17/08
CPC分类号： H03K17/08112 , H03K17/16 , H03K17/603 , H03K17/6242 , H03K17/6271
摘要： A buffer circuit comprises an interface node (IN, OUT), a bipolar transistor (Q₁, Q₂) having a collector connected to a first power source (Vcc), an emitter connected to a second power source (GND), and a base, for transferring a signal supplied to and from the interface node, and a diode structure (D) formed between the emitter and base of the bipolar transistor (Q₁, Q₂), the diode structure containing a PN junction reversely coupled across the emitter-base junction of the bipolar transistor (Q₁, Q₂).

19. 发明申请

US20180219061A1 Operation of Double-Base Bipolar Transistors with Additional Timing Phases at Switching Transitions 审中-公开
公开(公告)号：US20180219061A1
公开(公告)日：2018-08-02
申请号：US15868918
申请日：2018-01-11
申请人： Ideal Power Inc.
发明人： William C. Alexander , Richard A. Blanchard
IPC分类号： H01L29/06 , H01L29/739 , H03K17/66 , H03K17/081
CPC分类号： H01L29/0619 , H01L27/0694 , H01L29/0808 , H01L29/0821 , H01L29/1004 , H01L29/1008 , H01L29/16 , H01L29/66295 , H01L29/732 , H01L29/735 , H01L29/7393 , H01L29/747 , H03K17/06 , H03K17/08112 , H03K17/66 , H03K17/665 , H03K17/68 , H03K2217/0054 , H03K2217/0063 , H03K2217/0072
摘要： Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.

20. 发明申请

US20170104478A1 Operation of Double-Base Bipolar Transistors with Additional Timing Phases at Switching Transitions 审中-公开
公开(公告)号：US20170104478A1
公开(公告)日：2017-04-13
申请号：US15267085
申请日：2016-09-15
申请人： Ideal Power Inc.
发明人： William C. Alexander , Richard A. Blanchard
IPC分类号： H03K17/06 , H01L29/08 , H01L27/06 , H01L29/10 , H01L29/16 , H01L29/735
CPC分类号： H01L29/0619 , H01L27/0694 , H01L29/0808 , H01L29/0821 , H01L29/1004 , H01L29/1008 , H01L29/16 , H01L29/66295 , H01L29/732 , H01L29/735 , H01L29/7393 , H01L29/747 , H03K17/06 , H03K17/08112 , H03K17/66 , H03K17/665 , H03K17/68 , H03K2217/0054 , H03K2217/0063 , H03K2217/0072
摘要： Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.

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