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21. 发明公开

EP2749531A1 SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：圣彼得堡大学
公开(公告)号：EP2749531A1
公开(公告)日：2014-07-02
申请号：EP12825897.7
申请日：2012-08-23
申请人： Taiheiyo Cement Corporation
发明人： MASUDA, Kenta , ICHITSUBO, Kouki , KAWANO, Kohei , SUZUKI, Masakazu , KUMASAKA, Atsushi , TANAKA, Hideaki
IPC分类号： C01B31/36
CPC分类号： C01B31/36 , B82Y30/00 , C01B32/956 , C04B35/573 , C04B35/62695 , C04B2235/3418 , C04B2235/422 , C04B2235/424 , C04B2235/425 , C04B2235/5427 , C04B2235/5454 , C04B2235/549 , C04B2235/72 , C04B2235/727
摘要： Provided is a high-purity silicon carbide powder and its production method enabling mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production 1 in an Acheson furnace 4 using a heat generator 2. The raw material for silicon carbide production 1 is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production 1 contains the siliceous rawmaterial and the carbonaceous rawmaterial at a mixture mole ratio (C/SiO 2 ) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.
摘要翻译：提供一种高纯度碳化硅粉末及其制造方法，能够以低成本大量生产高纯度碳化硅粉末。碳化硅粉末中的杂质含量为500ppm以下。可以通过使用发热体2在Acheson炉4中加热生产碳化硅1的原料1来获得碳化硅粉末。通过混合硅质原料和碳质原料来制备碳化硅生产用原料1。碳化硅生产用原料1含有2.5〜4.0的混合摩尔比（C / SiO 2）的硅质原料和碳质原料，杂质含量为120ppm以下。

22. 发明公开

EP2245217A1 METHOD TO MANUFACTURE LARGE UNIFORM INGOTS OF SILICON CARBIDE BY SUBLIMATION/CONDENSATION PROCESSES 审中-公开
标题翻译：方法生产大型，单SILIZIUMCARBIDBARREN升华，缩合工艺
公开(公告)号：EP2245217A1
公开(公告)日：2010-11-03
申请号：EP08859709.1
申请日：2008-10-08
申请人： Dow Corning Corporation
发明人： LOBODA, Mark , PARK, Seung-ho , TORRES, Victor
IPC分类号： C30B23/00 , C30B29/36 , C01B31/36
CPC分类号： C01B31/36 , C01B32/90 , C01B32/956 , C01B33/00 , C01P2006/80 , C30B23/00 , C30B25/005 , C30B29/36
摘要： This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500 °C; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii).

23. 发明授权

EP2935099B1 PROCÉDÉ POUR LE CONTRÔLE DE LA PRODUCTION DE NANOPOUDRE DE DIAMÈTRE DONNÉ À PARTIR D'AU MOINS D'ACÉTYLÈNE CONTENU DANS UNE BOUTEILLE PRESSURISÉE 有权
标题翻译：方法用于控制与至少一个乙炔一定直径的纳米粉末的制造在压力负载辊
公开(公告)号：EP2935099B1
公开(公告)日：2017-05-31
申请号：EP13814946.3
申请日：2013-12-20
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： MASKROT, Hicham , GUIZARD, Benoît , ATMAN, Youssef
IPC分类号： C01B32/956 , B82Y40/00 , G01N15/02 , G01N15/00
CPC分类号： C01B31/36 , B82Y40/00 , C01B32/956 , G01N15/0205 , G01N21/55 , G01N2015/0038

24. 发明公开

EP3015428A4 SILICON CARBIDE POWDER 有权
标题翻译： SILICIUMCARBIDPULVER
公开(公告)号：EP3015428A4
公开(公告)日：2016-05-04
申请号：EP14817205
申请日：2014-06-20
申请人： BRIDGESTONE CORP
发明人： HASE KAZUHITO
IPC分类号： C01B31/36
CPC分类号： C01B31/36 , C01B32/956

25. 发明公开

EP3015427A4 SILICON CARBIDE POWDER 审中-公开
标题翻译： SILICIUMCARBIDPULVER
公开(公告)号：EP3015427A4
公开(公告)日：2016-05-04
申请号：EP14816624
申请日：2014-06-20
申请人： BRIDGESTONE CORP
发明人： HASE KAZUHITO
IPC分类号： C01B31/36 , C04B35/575 , C04B35/626
CPC分类号： C01B31/36 , C01B32/956 , C01P2004/61 , C04B35/575 , C04B2235/5436 , C04B2235/5463 , C04B2235/77
摘要： The present invention is a silicon carbide powder which is suitable for producing a high-strength silicon carbide sintered body, wherein: the molar ratio between carbon and silicon in a mixture containing a silicon source, a carbon source, and a catalyst is 2.5 or more; and the average particle diameter is 10 µm or more and 25 µm or less.

26. 发明公开

EP2730541A1 PARTICLES FORMED OF SILICA AND CARBON, AND METHOD FOR PRODUCING MIXTURE OF SILICA AND CARBON 有权
标题翻译：从颗粒二氧化硅和碳及其制造方法二氧化硅和碳的混合物
公开(公告)号：EP2730541A1
公开(公告)日：2014-05-14
申请号：EP12806968.9
申请日：2012-07-03
申请人： Taiheiyo Cement Corporation
发明人： ICHITSUBO, Kouki , MASUDA, Kenta , SUZUKI, Masakazu , KAWANO, Kohei , KUMASAKA, Atsushi
IPC分类号： C01B33/12 , C01B31/36 , C01B33/18
CPC分类号： C01B31/36 , C01B32/956 , C01B33/193 , C01P2002/72 , C01P2004/01 , C01P2004/03 , C01P2004/61 , C01P2006/80
摘要： The invention provides a particle formed of silica and carbon which has a low impurities content and an excellent reactivity. In the particle formed of silica and carbon, the silica and carbon are each distributed throughout the particle interior, and the contents of boron (B) and phosphorus (P) are each 1 ppm or less. Also provided is a method of producing a silica and carbon-containing material which is an assembly of particles formed of silica and carbon, this method including: (B) a carbon mixing step of mixing an aqueous alkali silicate solution having a silicon (Si) concentration within the a liquid portion of at least 10 wt% with carbon so as to obtain a carbon-containing aqueous alkali silicate solution; and (C) a silica recovery step of mixing the carbon-containing aqueous alkali silicate solution obtained in the step (B) with a mineral acid so as to cause carbon (C) and silicon (Si) within the liquid portion to precipitate as particles formed of silica and carbon and thus obtaining a particle-containing liquid substance, then solid-liquid separating the particle-containing liquid substance so as to obtain a solid portion that contains a silica and carbon-containing material which is an assembly of particles formed of silica and carbon and a liquid portion that contains impurities.
摘要翻译：本发明提供了形成的二氧化硅和碳具有低杂质含量和优良的反应性的颗粒。在形成的二氧化硅和碳，二氧化硅和碳的颗粒分别分布在整个颗粒内部，和硼（B）和磷（P）的含量各自为1ppm以下。如此提供的是制造二氧化硅和含碳材料的所有这是在形成的二氧化硅和碳的颗粒集合体，该方法的方法，包括：（B）的羧酸混合，在具有硅wässrige碱金属硅酸盐溶液混合的步骤（Si）的与碳的至少10重量％的液体中的部分内浓度，以便获得含碳wässrige碱金属硅酸盐溶液; 和（C），以便将液体部分以沉淀作为颗粒内引起碳（C）和硅（Si）中的工序（B）中得到的含碳wässrige碱金属硅酸盐溶液与无机酸混合的二氧化硅回收步骤形成的二氧化硅和碳的和由此获得含有颗粒的液体物质，然后进行固液含有颗粒的液体物质分离，从而获得在部分的固体确实含有二氧化硅和含碳材料所有这些都设置在形成的颗粒的组件二氧化硅和碳和液体部分含有杂质一样。

27. 发明公开

EP2881494A4 SiC MOLDED BODY AND METHOD FOR PRODUCING SiC MOLDED BODY 审中-公开
标题翻译： SIC状体及其制造方法的SiC状体
公开(公告)号：EP2881494A4
公开(公告)日：2016-03-02
申请号：EP12882269
申请日：2012-09-13
申请人： TOKAI CARBON KK
发明人： SUGIHARA TAKAOMI , ASAKURA MASAAKI , TOKUNAGA TAKESHI , SADAKI TETSUYA
IPC分类号： C23C16/42 , C01B31/36 , C04B35/565 , C23C16/01 , C23C16/32
CPC分类号： C01B31/36 , C01B32/956 , C04B35/565 , C04B2235/421 , C04B2235/441 , C04B2235/444 , C04B2235/46 , C04B2235/483 , C04B2235/72 , C04B2235/722 , C23C16/01 , C23C16/325
摘要： A CVD-SiC formed body has low light transmittance and high resistivity, and may suitably be used as a member for an etcher that is used for a semiconductor production process, for example. The SiC formed body is formed using a CVD method, and includes 1 to 30 mass ppm of boron atoms, and more than 100 mass ppm and 1000 mass ppm or less of nitrogen atoms. The SiC formed body preferably has a resistivity of more than 10 ©·cm and 100,000 ©·cm or less, and a light transmittance at a wavelength of 950 nm of 0 to 1%.

28. 发明公开

EP2899176A1 Ceramic structure 审中-公开
标题翻译： Keramische Struktur
公开(公告)号：EP2899176A1
公开(公告)日：2015-07-29
申请号：EP15152307.3
申请日：2015-01-23
申请人： Ibiden Co., Ltd
发明人： Takagi, Takashi , Maruyama, Hisaaki
IPC分类号： C04B35/565 , C04B35/622
CPC分类号： C01B31/36 , C01B32/956 , C04B35/565 , C04B35/62281 , G21C3/07
摘要： There is provided a ceramic structure including silicon carbide (SiC). The silicon carbide includes carbon, and silicon which has 28 Si enriched in comparison with a natural abundance ratio. An enrichment level of the 28 Si in the silicon carbide may be 99% or higher. The silicon carbide may be in the form of at least any one of an SiC sintered body, CVD-SiC, SiC fiber, and an SiC/SiC composite.
摘要翻译：提供了包括碳化硅（SiC）的陶瓷结构。碳化硅包括碳和与天然丰度比相比富含28Si的硅。碳化硅中的28Si的富集水平可以为99％以上。碳化硅可以是SiC烧结体，CVD-SiC，SiC纤维和SiC / SiC复合体中的至少任一种的形式。

29. 发明公开

EP2749531A4 SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：碳化硅粉及其制备方法
公开(公告)号：EP2749531A4
公开(公告)日：2015-05-13
申请号：EP12825897
申请日：2012-08-23
申请人： TAIHEIYO CEMENT CORP
发明人： MASUDA KENTA , ICHITSUBO KOUKI , KAWANO KOHEI , SUZUKI MASAKAZU , KUMASAKA ATSUSHI , TANAKA HIDEAKI
IPC分类号： C01B31/36
CPC分类号： C01B31/36 , B82Y30/00 , C01B32/956 , C04B35/573 , C04B35/62695 , C04B2235/3418 , C04B2235/422 , C04B2235/424 , C04B2235/425 , C04B2235/5427 , C04B2235/5454 , C04B2235/549 , C04B2235/72 , C04B2235/727
摘要： Provided is a high-purity silicon carbide powder and its production method enabling mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production 1 in an Acheson furnace 4 using a heat generator 2. The raw material for silicon carbide production 1 is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production 1 contains the siliceous rawmaterial and the carbonaceous rawmaterial at a mixture mole ratio (C/SiO 2 ) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.

30. 发明公开

EP2598438A2 SILICON CARBIDE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：硅及其制造方法
公开(公告)号：EP2598438A2
公开(公告)日：2013-06-05
申请号：EP11812738.0
申请日：2011-07-25
申请人： LG Innotek Co., Ltd.
发明人： HAN, Jung Eun , KIM, Byung Sook
IPC分类号： C01B31/36 , C04B35/565 , C04B35/634
CPC分类号： C01B31/36 , C01B32/956 , C04B35/573 , C04B2235/3418 , C04B2235/422 , C04B2235/424 , C04B2235/48
摘要： Provided is a method for manufacturing silicon carbide. The method includes mixing a dry silicon source, a solid carbon source, and a binder with each other and heating the mixed source to form silicon carbide.

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