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31. 发明申请

US20110165781A1 FLOWABLE DIELECTRIC USING OXIDE LINER 有权
标题翻译：可流动电介质使用氧化物衬里
公开(公告)号：US20110165781A1
公开(公告)日：2011-07-07
申请号：US12974495
申请日：2010-12-21
申请人： Jingmei Liang , Nitin K. Ingle
发明人： Jingmei Liang , Nitin K. Ingle
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/56 , H01J37/32357 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02337
摘要： Methods of forming silicon oxide layers are described. The methods include mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing a hydrogen-and-nitrogen-containing precursor into the plasma. Prior to depositing the silicon-and-nitrogen-containing layer, a silicon oxide liner layer is formed to improve adhesion, smoothness and flowability of the silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film. Methods also include forming a silicon oxide liner layer before applying a spin-on silicon-containing material.
摘要翻译：描述形成氧化硅层的方法。所述方法包括将无碳的含硅前体与自由基 - 氮前体混合，并在基底上沉积含硅和氮的层。通过使含氢和氮的前体流入等离子体，在等离子体中形成自由基 - 氮前体。在沉积含硅和氮的层之前，形成氧化硅衬层以提高含硅和含氮层的粘附性，平滑性和流动性。通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。方法还包括在施加旋涂的含硅材料之前形成氧化硅衬层。

32. 发明授权

US07935643B2 Stress management for tensile films 有权
标题翻译：拉伸薄膜的应力管理
公开(公告)号：US07935643B2
公开(公告)日：2011-05-03
申请号：US12604332
申请日：2009-10-22
申请人： Jingmei Liang , Anjana M. Patel , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Anjana M. Patel , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31608 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/3185 , H01L21/76829 , H01L21/76834 , H01L21/76837
摘要： The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves the formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.
摘要翻译：描述了具有降低的开裂倾向的间隙填充氧化硅层的形成。沉积涉及形成有助于填充沟槽的可流动的含硅层。在基板温度高的情况下，与根据现有技术中的方法形成的可流动膜相比，电介质膜中的裂纹少。描述在形成间隙填充氧化硅层之前沉积的压缩衬垫层，并且降低随后沉积的膜破裂的倾向。在可流动的含硅层之后沉积的压缩覆盖层也被确定以减少开裂。压缩衬里层和压缩覆盖层可以单独使用或组合使用以减少并经常消除开裂。已经确定了所公开的实施例中的压缩覆盖层，以使氮化硅的下层能够转变成氧化硅层。

33. 发明申请

US20110081782A1 POST-PLANARIZATION DENSIFICATION 失效
公开(公告)号：US20110081782A1
公开(公告)日：2011-04-07
申请号：US12787791
申请日：2010-05-26
申请人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/3105
CPC分类号： H01L21/3105 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02337 , H01L21/31055 , H01L21/316 , H01L21/67207 , H01L21/76229
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.

34. 发明申请

US20090031953A1 CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING A SILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN 审中-公开
标题翻译：使用含硅前体和原子氧的高品质流动二氧化硅的化学气相沉积
公开(公告)号：US20090031953A1
公开(公告)日：2009-02-05
申请号：US12249816
申请日：2008-10-10
申请人： Nitin K. Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
发明人： Nitin K. Ingle , Zheng Yuan , Paul Gee , Kedar Sapre
IPC分类号： C23C16/513
CPC分类号： C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/02337 , H01L21/31612
摘要： Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.
摘要翻译：描述了在衬底上沉积氧化硅层的方法。所述方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，以及将原子氧前体引入室中。所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。还描述了在衬底上沉积氧化硅层的系统。

35. 发明申请

US20130149462A1 SURFACE TREATMENT AND DEPOSITION FOR REDUCED OUTGASSING 有权
标题翻译：表面处理和沉积减少出口
公开(公告)号：US20130149462A1
公开(公告)日：2013-06-13
申请号：US13494341
申请日：2012-06-12
申请人： Jingmei Liang , Xiaolin Chen , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Xiaolin Chen , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： C23C16/40
CPC分类号： C23C16/401 , C23C16/345 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274
摘要： A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.
摘要翻译：描述形成电介质层的方法。该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）层。通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅和氮的层。氧化硅覆盖层可以由一部分无碳硅 - 含氮和氢的层形成，以避免在转化成氧化硅之前下层性质的时间演变。或者，氧化硅覆盖层形成在含硅 - 氮和氢的层之上。任一种形成方法都涉及在衬底处理区域内形成局部等离子体。

36. 发明申请

US20130084711A1 REMOTE PLASMA BURN-IN 失效
标题翻译：远程等离子体燃烧
公开(公告)号：US20130084711A1
公开(公告)日：2013-04-04
申请号：US13527877
申请日：2012-06-20
申请人： Jingmei Liang , Lili Ji , Nitin K. Ingle
发明人： Jingmei Liang , Lili Ji , Nitin K. Ingle
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01J37/32862 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02326
摘要： Methods of treating the interior of a plasma region are described. The methods include a preventative maintenance procedure or the start-up of a new substrate processing chamber having a remote plasma system. A new interior surface is exposed within the remote plasma system. The (new) interior surfaces are then treated by sequential steps of (1) forming a remote plasma from hydrogen-containing precursor within the remote plasma system and then (2) exposing the interior surfaces to water vapor. Steps (1)-(2) are repeated at least ten times to complete the burn-in process. Following the treatment of the interior surfaces, a substrate may be transferred into a substrate processing chamber. A dielectric film may then be formed on the substrate by flowing one precursor through the remote plasma source and combining the plasma effluents with a second precursor flowing directly to the substrate processing region.
摘要翻译：描述了处理等离子体区域内部的方法。这些方法包括预防性维护程序或启动具有远程等离子体系统的新基板处理室。新的内表面暴露在远程等离子体系统内。（新）内表面然后通过（1）在远程等离子体系统内从含氢前体形成远程等离子体的顺序步骤进行处理，然后（2）将内表面暴露于水蒸汽。步骤（1） - （2）重复至少十次以完成老化过程。在内表面的处理之后，可以将衬底转移到衬底处理室中。然后可以通过使一个前体流过远程等离子体源并且将等离子体流出物与直接流到衬底处理区的第二前体结合在衬底上形成电介质膜。

37. 发明申请

US20130034968A1 DRY-ETCH FOR SILICON-AND-CARBON-CONTAINING FILMS 有权
标题翻译：含硅和碳膜的干燥剂
公开(公告)号：US20130034968A1
公开(公告)日：2013-02-07
申请号：US13279998
申请日：2011-10-24
申请人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Yunyu Wang , Young Lee
发明人： Jingchun Zhang , Anchuan Wang , Nitin K. Ingle , Yunyu Wang , Young Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的含硅和碳的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和碳的材料的暴露区域反应。等离子体流出物与图案化的异质结构反应，以便从暴露的含硅和碳的材料区域选择性地除去含硅和碳的材料，同时非常缓慢地除去其它暴露的材料。含硅和碳的材料选择性部分取决于位于远程等离子体和基板处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。该方法可用于以超过二氧化硅的二十倍的速率选择性地除去含硅和碳的材料。

38. 发明授权

US08329587B2 Post-planarization densification 失效
标题翻译：后平面化致密化
公开(公告)号：US08329587B2
公开(公告)日：2012-12-11
申请号：US12787791
申请日：2010-05-26
申请人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/311
CPC分类号： H01L21/3105 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02337 , H01L21/31055 , H01L21/316 , H01L21/67207 , H01L21/76229
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.
摘要翻译：描述了在图案化衬底上形成高密度间隙填充氧化硅的工艺。这些工艺增加了间隙填充氧化硅的密度，特别是在狭窄的沟槽中。在宽的沟槽和凹入的开放区域中，密度也可以增加。狭缝和宽沟槽/开放区域中填充间隙的氧化硅的密度在处理之后变得更加相似，这允许蚀刻速率更紧密地匹配。这种效果也可以被描述为模式加载效应的降低。该方法涉及形成二氧化硅平坦化。平面化暴露出更靠近窄沟槽设置的新介质界面。新暴露的界面通过将平坦化表面退火和/或暴露于等离子体来促进致密化处理。

39. 发明申请

US20120177846A1 RADICAL STEAM CVD 审中-公开
标题翻译：放射性CVD
公开(公告)号：US20120177846A1
公开(公告)日：2012-07-12
申请号：US13236388
申请日：2011-09-19
申请人： DongQing Li , Jingmei Liang , Xiaolin Chen , Nitin K. Ingle
发明人： DongQing Li , Jingmei Liang , Xiaolin Chen , Nitin K. Ingle
IPC分类号： C23C16/40 , C23C16/56 , C23C16/50
CPC分类号： C23C16/308 , C23C16/045 , C23C16/452 , C23C16/56
摘要： Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。这些方法包括同时将等离子体激发（自由基）蒸汽与未催化的硅前体组合。可以通过等离子体激发途径（例如通过向蒸汽中加入氨）和/或通过选择含氮的未催化的硅前体来供应氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有很少或不含氮的氧化硅层。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

40. 发明申请

US20110212620A1 POST-PLANARIZATION DENSIFICATION 有权
标题翻译：后期平面化差异
公开(公告)号：US20110212620A1
公开(公告)日：2011-09-01
申请号：US13043131
申请日：2011-03-08
申请人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/306
CPC分类号： H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31055 , H01L21/316 , H01L21/76229
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.
摘要翻译：描述了在图案化衬底上形成高密度间隙填充氧化硅的工艺。这些工艺增加了间隙填充氧化硅的密度，特别是在狭窄的沟槽中。在宽的沟槽和凹入的开放区域中，密度也可以增加。狭缝和宽沟槽/开放区域中填充间隙的氧化硅的密度在处理之后变得更加相似，这允许蚀刻速率更紧密地匹配。这种效果也可以被描述为模式加载效应的降低。该方法涉及形成二氧化硅平坦化。平面化暴露出更靠近窄沟槽设置的新介质界面。新暴露的界面通过将平坦化表面退火和/或暴露于等离子体来促进致密化处理。

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