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31. 发明授权

US06630871B2 Center-mass-reduced microbridge structures for ultra-high frequency MEM resonator 失效
标题翻译：用于超高频MEM谐振器的中心质量减小的微桥结构
公开(公告)号：US06630871B2
公开(公告)日：2003-10-07
申请号：US09967732
申请日：2001-09-28
申请人： Qing Ma , Peng Cheng
发明人： Qing Ma , Peng Cheng
IPC分类号： H03B530
CPC分类号： B81B3/0078 , B81B2201/016 , B81B2203/019 , H03H3/0077 , H03H9/2463
摘要： A micro-electromechanical (MEM) resonator is described that includes a substrate, a microbridge beam structure coupled to the substrate and at least one electrode disposed adjacent to the microbridge beam structure to induce vibration of the beam. The microbridge beam structure includes support sections and a beam formed between the support sections. The center region of the beam has a mass that is less than the mass of regions of the beam adjacent to the support sections.
摘要翻译：描述了一种微机电（MEM）谐振器，其包括衬底，耦合到衬底的微桥梁结构和邻近微桥梁结构设置的至少一个电极以引起梁的振动。微桥梁结构包括支撑部分和形成在支撑部分之间的梁。梁的中心区域的质量小于与支撑部分相邻的梁的区域的质量。

32. 发明授权

US06593672B2 MEMS-switched stepped variable capacitor and method of making same 有权
公开(公告)号：US06593672B2
公开(公告)日：2003-07-15
申请号：US09746718
申请日：2000-12-22
申请人： Qing Ma , Peng Cheng , Valluri Rao
发明人： Qing Ma , Peng Cheng , Valluri Rao
IPC分类号： H02M306
CPC分类号： H01G5/16 , H01G5/40 , Y10T307/724 , Y10T307/729
摘要： The present invention relates to a stepped micro electromechanical structure (MEMS) capacitor that is actuated by a plurality of MEMS switches. The MEMS switches may be within the stepped capacitor circuit, or they may be actuated by an independent circuit. The stepped capacitor may also be varied with intermediate steps of capacitance by providing at least one variable capacitor in the stepped MEMS capacitor structure.

33. 发明授权

US06570220B2 Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition 有权
公开(公告)号：US06570220B2
公开(公告)日：2003-05-27
申请号：US09524986
申请日：2000-03-14
申请人： Brian S. Doyle , Peng Cheng
发明人： Brian S. Doyle , Peng Cheng
IPC分类号： H01L2976
CPC分类号： B82Y10/00 , H01L21/0337 , H01L21/0338 , H01L21/762 , H01L21/823437 , H01L29/0665 , H01L29/66439 , H01L29/66795 , H01L29/785 , Y10S438/946 , Y10S438/947
摘要： The invention relates to a method of forming reduced feature size spacers. The method includes providing a semiconductor substrate having an area region; patterning a first spacer over a portion of the area region of the substrate, the first spacer having a first thickness and opposing side portions; patterning a pair of second spacers, each second spacer adjacent to a side portion of the first spacer, each second spacer having a second thickness in opposing side portions, wherein the second thickness is less than the first thickness; removing the first spacer; patterning a plurality of third spacers, each third spacer adjacent to one of the side portions of one of the second spacers, each one of the third spacers having a third thickness, wherein the third thickness is less than the second thickness; and removing the second spacers. The invention also relates to a field of effect transistor. The transistor includes a semiconductor substrate having a source region and a drain region; a gate area of the substrate surface; a channel region in the substrate having a cross-sectional area defined by a portion of the gate area, a channel length measured accross a portion of the channel region between the source region and the drain region; and a trench formed in a portion of the channel region, the trench having a trench length substantially equivalent to the channel length.

34. 发明授权

US06277765B1 Low-K Dielectric layer and method of making same 有权
标题翻译：低K电介质层及其制造方法
公开(公告)号：US06277765B1
公开(公告)日：2001-08-21
申请号：US09376510
申请日：1999-08-17
申请人： Peng Cheng , Brian S. Doyle , Chien Chiang , Mark Thiec-Hien Tran
发明人： Peng Cheng , Brian S. Doyle , Chien Chiang , Mark Thiec-Hien Tran
IPC分类号： H01L2131
CPC分类号： H01L21/02164 , H01L21/02203 , H01L21/02238 , H01L21/02255 , H01L21/02304 , H01L21/02362 , H01L21/31695 , H01L21/76807 , H01L21/7682 , H01L2221/1047
摘要： A low dielectric constant material, suitable for use as an interlayer dielectric in microelectronic structures includes a porous silicon oxide layer. In a further aspect of the present invention, a porous oxide of silicon is formed by the room temperature oxidation of porous silicon. The room temperature oxidation is achieved by exposing a porous silicon layer to a solution of hydrochloric acid, hydrogen peroxide, and water, in the presence of a metal catalyst.
摘要翻译：适用于微电子结构中的层间电介质的低介电常数材料包括多孔氧化硅层。在本发明的另一方面，通过多孔硅的室温氧化形成硅的多孔氧化物。通过在金属催化剂的存在下将多孔硅层暴露于盐酸，过氧化氢和水的溶液来实现室温氧化。

35. 发明授权

US06187694B1 Method of fabricating a feature in an integrated circuit using two edge definition layers and a spacer 失效
公开(公告)号：US06187694B1
公开(公告)日：2001-02-13
申请号：US08969008
申请日：1997-11-10
申请人： Peng Cheng , Brian S. Doyle
发明人： Peng Cheng , Brian S. Doyle
IPC分类号： H01L21265
CPC分类号： H01L21/28132 , H01L21/31116 , H01L21/31144 , H01L21/32137 , H01L21/32139 , Y10S438/947
摘要： A method of fabricating a feature on a substrate is disclosed. In a described embodiment the feature is the gate electrode of an MOS transistor. In this embodiment a polysilicon layer is formed on the substrate. Next, an edge definition layer of silicon nitride is formed on the feature layer. Then, a patterned edge definition layer of silicon dioxide is formed on the first edge definition layer. Then, a silicon nitride spacer is formed adjacent to an edge of the patterned second edge definition layer. Finally, the polysilicon layer is etched, forming the transistor gate electrode from the polysilicon that remains under the spacer.

36. 发明授权

US6162696A Method of fabricating a feature in an integrated circuit using a two mask process with a single edge definition layer 失效
标题翻译：使用具有单个边缘定义层的两个掩模处理在集成电路中制造特征的方法
公开(公告)号：US6162696A
公开(公告)日：2000-12-19
申请号：US160012
申请日：1998-09-24
申请人： Peng Cheng , Brian S. Doyle
发明人： Peng Cheng , Brian S. Doyle
IPC分类号： H01L21/28 , H01L21/311 , H01L21/3213 , H01L21/331
CPC分类号： H01L21/28132 , H01L21/31116 , H01L21/31144 , H01L21/32137 , H01L21/32139
摘要： A method of fabricating a feature on a substrate is described. In one embodiment, the fabricated feature is the gate electrode of an MOS transistor. A feature layer is formed on the substrate with a patterned edge definition layer then formed on the feature layer. Next, a spacer layer is formed adjacent to an edge of the patterned edge definition layer. Finally, the feature layer is etched, forming the transistor gate electrode from the feature layer that remains under the spacer.
摘要翻译：描述了在衬底上制造特征的方法。在一个实施例中，所制造的特征是MOS晶体管的栅电极。特征层形成在衬底上，然后形成在特征层上的图案化边缘限定层。接下来，与图案化边缘限定层的边缘相邻地形成间隔层。最后，蚀刻特征层，从保留在间隔物下方的特征层形成晶体管栅电极。

37. 发明申请

US20130277804A1 BIPOLAR JUNCTION TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION CAPACITANCE 审中-公开
标题翻译：具有降低的基极集电极结电容的双极晶体管
公开(公告)号：US20130277804A1
公开(公告)日：2013-10-24
申请号：US13452335
申请日：2012-04-20
申请人： Peng Cheng , David L. Harame , Robert K. Leidy , Qizhi Liu
发明人： Peng Cheng , David L. Harame , Robert K. Leidy , Qizhi Liu
IPC分类号： H01L29/732 , G06F17/50 , H01L21/331
CPC分类号： H01L29/66287 , H01L29/0649 , H01L29/0804 , H01L29/7325
摘要： Methods for fabricating a device structure such as a bipolar junction transistor, device structures for a bipolar junction transistor, and design structures for a bipolar junction transistor. The device structure includes a collector region formed in a substrate, an intrinsic base coextensive with the collector region, an emitter coupled with the intrinsic base, a first isolation region surrounding the collector region, and a second isolation region formed at least partially within the collector region. The first isolation region has a first sidewall and the second isolation region having a second sidewall peripherally inside the first sidewall. A portion of the collector region is disposed between the first sidewall of the first isolation region and the second sidewall of the second isolation region.
摘要翻译：用于制造诸如双极结型晶体管的器件结构的方法，用于双极结型晶体管的器件结构以及用于双极结型晶体管的设计结构。器件结构包括形成在衬底中的集电极区域，与集电极区域共同延伸的本征基极，与本征基极耦合的发射极，围绕集电极区域的第一隔离区域和至少部分地形成在集电极区域内的第二隔离区域地区。第一隔离区域具有第一侧壁，第二隔离区域在第一侧壁周围具有第二侧壁。集电极区域的一部分设置在第一隔离区域的第一侧壁和第二隔离区域的第二侧壁之间。

38. 发明申请

US20120271545A1 METHOD AND APPARATUS FOR PROVIDING A MULTI-DIMENSIONAL DATA INTERFACE 审中-公开
标题翻译：用于提供多维数据接口的方法和装置
公开(公告)号：US20120271545A1
公开(公告)日：2012-10-25
申请号：US13089870
申请日：2011-04-19
申请人： Peng Cheng
发明人： Peng Cheng
IPC分类号： G01C21/36
CPC分类号： G06F1/169 , G06F1/1692 , G06F3/04815 , G06F3/0483 , G06F3/0488 , G06F2203/0339
摘要： Various methods for providing a multi-dimensional data interface are provided. One example method may include receiving first data navigation instructions for navigating data in a first dimension or a second dimension via a first user interface device, causing a presentation of the data to be modified within the first dimension or the second dimension in response to at least receiving the first data navigation instructions, receiving second data navigation instructions for navigating the data in a third dimension via a second user interface device, and causing the presentation of the data to be modified within a third dimension in response to at least receiving the second data navigation instructions. Similar and related example methods, example apparatuses, and example computer program products are also provided.
摘要翻译：提供了用于提供多维数据接口的各种方法。一个示例性方法可以包括接收用于经由第一用户界面设备导航第一维度或第二维度中的数据的第一数据导航指令，以响应于至少在第一维度或第二维度中对数据进行修改接收第一数据导航指令，接收用于经由第二用户界面设备导航第三维度中的数据的第二数据导航指令，并且响应于至少接收第二数据使得在第三维度内修改数据的呈现导航说明。还提供了类似的和相关的示例性方法，示例性装置和示例性计算机程序产品。

39. 发明申请

US20110259039A1 Thermally Driven Heat Pump for Heating and Cooling 审中-公开
标题翻译：用于加热和冷却的热驱动热泵
公开(公告)号：US20110259039A1
公开(公告)日：2011-10-27
申请号：US12745168
申请日：2008-11-26
申请人： Hongbin Ma , Joseph A. Boswell , Peng Cheng
发明人： Hongbin Ma , Joseph A. Boswell , Peng Cheng
IPC分类号： F25B17/00 , F25B41/00
CPC分类号： F25B1/08 , F25B15/02 , F25B2341/0011 , F25B2341/0015 , Y02A30/277 , Y02B30/62
摘要： A thermally driven heat pump includes a low temperature evaporator for evaporating cooling fluid to remove heat A first heat exchanger located at an outlet of a converging/diverging chamber of a first ejector receives a flow of primary fluid vapor and cooling fluid vapor ejected from the first ejector for condensing a portion of the cooling fluid vapor An absorber located in the first heat exchanger absorbs cooling fluid vapor into an absorbing fluid to reduce the pressure in the first heat exchanger A second heat exchanger located at an outlet of a converging/diverging chamber of a second ejector receives primary fluid vapor and cooling fluid vapor ejected from the second ejector for condensing the cooling fluid vapor and the primary fluid vapor A separator in communication with the second ejector, the low temperature evaporator and the primary fluid evaporator separates the primary fluid from the cooling fluid.
摘要翻译：热驱动热泵包括用于蒸发冷却流体以去除热量的低温蒸发器。位于第一喷射器的会聚/发散室的出口处的第一热交换器接收从第一喷射器喷射的主流体蒸气和冷却流体蒸汽的流动用于冷凝冷却流体蒸气的一部分的喷射器位于第一热交换器中的吸收器将冷却流体蒸气吸收到吸收流体中以降低第一热交换器中的压力位于位于会聚/发散室的出口处的第二热交换器第二喷射器接收从第二喷射器喷射的主要流体蒸汽和冷却流体蒸气，用于冷凝冷却流体蒸气和与第二喷射器连通的主流体蒸汽A分离器，低温蒸发器和主流体蒸发器将主流体从冷却液。

40. 发明授权

US07245057B2 Micro-electromechanical structure resonator frequency adjustment using radiant energy trimming and laser/focused ion beam assisted deposition 有权
标题翻译：微机电结构谐振器频率调整采用辐射能量修整和激光/聚焦离子束辅助沉积
公开(公告)号：US07245057B2
公开(公告)日：2007-07-17
申请号：US10763779
申请日：2004-01-22
申请人： Qing Ma , Peng Cheng , Valluri Rao
发明人： Qing Ma , Peng Cheng , Valluri Rao
IPC分类号： H01L41/08
CPC分类号： B81C1/0015 , B81B2201/0271 , B81C2201/053 , H03H9/02393 , H03H9/2405 , H03H2009/02511 , Y10T29/49105 , Y10T29/4916
摘要： The invention relates to a microbeam oscillator. Tuning of the oscillator is carried out by addition or subtraction of material to an oscillator member in order to change the mass of the oscillator member.
摘要翻译：本发明涉及一种微波振荡器。振荡器的调谐是通过对振荡器元件进行加法或减法来实现的，以便改变振荡器元件的质量。

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