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31. 发明授权

US08447697B2 Rights offering and granting 有权
公开(公告)号：US08447697B2
公开(公告)日：2013-05-21
申请号：US12815888
申请日：2010-06-15
申请人： Xin Wang , Bijan Tadayon
发明人： Xin Wang , Bijan Tadayon
IPC分类号： H04L9/00
CPC分类号： H04L63/08 , G06Q20/123 , G06Q20/1235 , G06Q20/401 , G06Q50/188 , G07F17/0014 , G07F17/16 , H04L63/0823 , H04L63/10 , H04L63/12 , H04L63/18 , H04L2463/101
摘要： Processes and systems for offering and granting digital rights that govern distribution and usage of content, services and resources. The processes and systems provide a basis for flexible business models and negotiation transactions between content providers and users. The concept of meta-rights, which permit digital rights to be derived, permits upstream parties in a content distribution chain to dictate rights granted and received by downstream parties. Therefore, each transaction can be considered as a two party transaction between a rights supplier and a rights consumer.

32. 发明授权

US08435849B2 Method of forming a CMOS IC having a compressively stressed metal layer in the NMOS area 有权
标题翻译：在NMOS区域中形成具有压应力金属层的CMOS IC的方法
公开(公告)号：US08435849B2
公开(公告)日：2013-05-07
申请号：US13440344
申请日：2012-04-05
申请人： Xin Wang , Zhiqiang Wu , Ramesh Venugopal
发明人： Xin Wang , Zhiqiang Wu , Ramesh Venugopal
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/28052 , H01L21/823842 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7845 , H01L29/7847
摘要： A gate stack for an NMOS transistor in an IC to induce tensile stress in the NMOS channel is disclosed. The gate stack includes a first layer of undoped polysilicon, a second layer of n-type polysilicon to establish a desired work function in the gate, layer of compressively stressed metal, and a third layer of polysilicon to provide a silicon surface for subsequent formation of metal silicide. Candidates for the compressively stressed metal are TiN, TaN, W, and Mo. In a CMOS IC, the n-type polysilicon layer and metal layer are patterned in NMOS transistor areas, while the first polysilicon layer and third polysilicon layer are patterned in both NMOS and PMOS transistor areas. Polysilicon CMP may be used to reduce topography between the NMOS and PMOS gate stacks to facilitate gate pattern photolithography.
摘要翻译：公开了用于在NMOS沟道中引起拉伸应力的IC中的NMOS晶体管的栅极堆叠。栅极堆叠包括第一层未掺杂的多晶硅，第二层n型多晶硅，以在栅极中建立所需的功函数，压缩应力金属层，以及第三层多晶硅，以提供硅表面，用于随后形成金属硅化物。用于压应力金属的候选物是TiN，TaN，W和Mo。在CMOS IC中，n型多晶硅层和金属层在NMOS晶体管区域中被图案化，而第一多晶硅层和第三多晶硅层被图案化 NMOS和PMOS晶体管区域。多晶硅CMP可以用于减小NMOS和PMOS栅极堆叠之间的形貌，以便于栅极图案光刻。

33. 发明授权

US08381933B2 Garbage bin 有权
标题翻译：垃圾桶
公开(公告)号：US08381933B2
公开(公告)日：2013-02-26
申请号：US12451638
申请日：2007-11-12
申请人： Xin Wang , Jiangqun Chen
发明人： Xin Wang , Jiangqun Chen
IPC分类号： B65D90/60 , B65D3/26 , B65D43/26
CPC分类号： B65F1/1638 , B65F1/1607
摘要： A garbage bin includes a bin body, a bin head, an inducting window, a garbage inlet disposed on the bin head, a bin cover disposed on the garbage inlet, an upright shaft and a driving unit for making the upright shaft rotate. The upright shaft is connected to the driving unit, and the bin cover is connected to the upright shaft, in which the connecting point is not at the center of the bin cover. The advantages of the invention is that the rotating shaft of the bin cover is the upright shaft on the bin head, so when the bin cover rotates about the upright shaft, the bin cover opens horizontally about the upright shaft, so that the driving force is small, the energy consumption is low, and a user's hand is prevented from touching by the bin cover.
摘要翻译：垃圾箱包括箱体，箱头，导入窗，设置在垃圾桶头上的垃圾入口，设置在垃圾入口上的垃圾桶盖，竖立轴和用于使竖立轴旋转的驱动单元。直立轴连接到驱动单元，并且箱盖连接到直立轴，其中连接点不在箱盖的中心。本发明的优点在于，箱盖的旋转轴是仓头上的立式轴，因此当仓盖围绕立式轴旋转时，仓盖围绕竖直轴水平地打开，使得驱动力为小，能量消耗低，并且防止用户的手被垃圾箱盖接触。

34. 发明申请

US20120241669A1 Solvent Spun Bamboo Fiber with High Wet Modulus and Producing Method Thereof 有权
标题翻译：具有高湿模量的溶剂纺竹纤维及其生产方法
公开(公告)号：US20120241669A1
公开(公告)日：2012-09-27
申请号：US13499512
申请日：2010-09-07
申请人： Kun Jiang , Xiaoliang Wang , Changli Zhu , Xin Wang , Dianhai Zheng
发明人： Kun Jiang , Xiaoliang Wang , Changli Zhu , Xin Wang , Dianhai Zheng
IPC分类号： D01D5/06 , C09K3/00
CPC分类号： D01C1/00 , D01D5/04 , D01F2/00
摘要： A solvent spun bamboo fiber with a high wet modulus and a producing method thereof are disclosed. The producing method includes: activating by adding a bamboo pulp into de-ionized water, adjusting the pH value, adding cellulase and adjusting the pH value by adding alkali; squeezing by vacuum dehydration; pre-dissolving by adding an aqueous solution containing 50-88% by mass of N-methylmorpholine-N-oxide; then dissolving by putting the above pre-dissolved mixture into a dissolver, heating, vacuumizing, dehydrating, dissolving, homogenizing and defoaming; spinning by spraying through a spinneret and forming a bamboo fiber by dry-wet spinning; water washing; bleaching; oiling; and drying. The present method is simple to operate, free of industrial pollution, low energy consuming, and highly safe. The bamboo fiber produced by the present method not only keeps the natural physical and chemical properties of bamboo fiber, but also has a high wet modulus without harmful chemical residues.
摘要翻译：公开了一种具有高湿模量的溶剂纺丝竹纤维及其制造方法。其制造方法包括：通过向去离子水中加入竹浆进行活化，调节pH值，加入纤维素酶并通过加入碱调节pH值; 真空脱水挤压; 通过加入含有50-88质量％的N-甲基吗啉-N-氧化物的水溶液进行预溶解; 然后通过将上述预先溶解的混合物放入溶解器中进行溶解，加热，真空，脱水，溶解，均化和消泡; 通过喷丝头喷雾纺丝并通过干湿纺丝形成竹纤维; 水洗; 漂; 注油; 并干燥。本方法操作简单，无工业污染，能耗低，安全性高。本发明生产的竹纤维不仅保持了竹纤维的天然物理化学性质，而且具有较高的湿模量，无有害化学残留物。

35. 发明授权

US08244579B2 Method and apparatus for distributing enforceable property rights 有权
标题翻译：分配可执行产权的方法和装置
公开(公告)号：US08244579B2
公开(公告)日：2012-08-14
申请号：US11389096
申请日：2006-03-27
申请人： Xin Wang , Bijan Tadayon , Thomas DeMartini , Michael Raley , Guillermo Lao , Eddie J. Chen , Charles P. Gilliam
发明人： Xin Wang , Bijan Tadayon , Thomas DeMartini , Michael Raley , Guillermo Lao , Eddie J. Chen , Charles P. Gilliam
IPC分类号： G06Q30/00 , G07G1/14
CPC分类号： G06F21/10 , H04L63/10 , H04L2463/101 , Y10S707/99939 , Y10S707/99945
摘要： An enforceable property right and a system for controlling the manner of use of an item in accordance with usage rights. The enforceable property right includes an item ticket having a security mechanism incorporated therein and specifying an item for which the item ticket can be redeemed and a license associated with the item ticket. The license includes usage rights specifying a manner of use for redeeming the item ticket and a mechanism for unlocking said security mechanism.
摘要翻译：可执行财产权和根据使用权控制物品使用方式的制度。可执行财产权包括具有并入其中的安全机制的物品票，并且指定可以兑换物品票的物品和与物品票相关联的许可证。许可证包括指定用于兑换物品票的使用方式的使用权限以及用于解锁所述安全机制的机构。

36. 发明授权

US08141734B2 Induction actuation container with rechargeable power supply 有权
标题翻译：具有可充电电源的感应驱动容器
公开(公告)号：US08141734B2
公开(公告)日：2012-03-27
申请号：US12454612
申请日：2009-05-19
申请人： Xin Wang , Jiangqun Chen
发明人： Xin Wang , Jiangqun Chen
IPC分类号： B65D55/00
CPC分类号： B65F1/1607 , B65F1/1638 , B65F2210/172
摘要： A container includes a container body having a receiving cavity and a container opening communicating with the receiving cavity, a cover panel movably coupled mounted at the container opening to fold between a closed position and an opened position, and an induction actuation system. The induction actuation system includes an actuation unit to automatically drive the cover panel moving between the closed position and the opened position in responsive to a presence of a user and a power recharging arrangement which includes a battery unit detachably supported by the container body, wherein the battery unit is mounted at the container body to electrically connect to the actuation unit for resuming proper operation thereof and is detached from the container body for recharging purpose.
摘要翻译：容器包括具有容纳腔和与容纳腔连通的容器开口的容器本体，可移动地连接在容器开口处以在关闭位置和打开位置之间折叠的盖板和感应致动系统。感应致动系统包括致动单元，其响应于用户的存在和包括由容器主体可拆卸地支撑的电池单元的电力充电装置，自动驱动盖板在关闭位置和打开位置之间移动，其中，电池单元安装在容器主体处以电连接到致动单元以恢复其正常操作，并且从容器主体拆卸用于充电目的。

37. 发明申请

US20120028167A1 METHOD FOR PREPARING A POROUS POLYIMIDE FILM AND A COMPOSITE MEMBRANE COMPRISING THE SAME 审中-公开
标题翻译：制备多孔聚酰亚胺膜的方法和包含其的复合膜
公开(公告)号：US20120028167A1
公开(公告)日：2012-02-02
申请号：US13193143
申请日：2011-07-28
申请人： Xin Wang , Tien Hoa Nguyen
发明人： Xin Wang , Tien Hoa Nguyen
IPC分类号： H01M8/10 , B29C67/20 , C08G73/10 , B29C39/00
CPC分类号： H01M8/103 , C08G73/1042 , C08G73/105 , C08G73/1067 , C08G73/1071 , H01M8/1023 , H01M8/1025 , H01M8/1027 , H01M8/1032 , H01M8/1039 , H01M8/1044 , H01M8/1048 , H01M8/1051 , H01M8/106 , H01M8/1062 , H01M8/1067 , H01M8/1072 , H01M8/1081 , Y02P70/56
摘要： The present invention relates to a method for preparing a porous polyimide film, comprising reacting an aromatic dianhydride with one or more aromatic diamines in a suitable solvent to form poly(amic acid), adding a dehydrated agent of an acid anhydride and an organic base to the reaction mixture to convert the poly(amic acid) to a polyimide precursor, casting the reaction mixture comprising the polyimide precursor onto a solid support to form a film, coagulating the polyimide precursor in a coagulating bath comprising a mixture of a solvent and a non-solvent to develop a porous structure, and drying the coagulated polyimide precursor in air to form the porous polyimide film. A composite membrane comprising same and its use are also provided.
摘要翻译：本发明涉及一种制备多孔聚酰亚胺膜的方法，包括使芳族二酐与一种或多种芳族二胺在合适的溶剂中反应形成聚（酰胺酸），加入酸酐和有机碱的脱水剂将聚（酰胺酸）转化为聚酰亚胺前体的反应混合物，将包含聚酰亚胺前体的反应混合物浇铸到固体载体上以形成膜，使聚酰亚胺前体在包含溶剂和非溶剂的混合物的凝固浴中凝结开发多孔结构，并在空气中干燥凝结的聚酰亚胺前体以形成多孔聚酰亚胺膜。还提供了包含其的复合膜及其用途。

38. 发明授权

US08105841B2 Method and assembly for determining the temperature of a test sensor 有权
标题翻译：用于确定测试传感器温度的方法和组件
公开(公告)号：US08105841B2
公开(公告)日：2012-01-31
申请号：US12252348
申请日：2008-10-15
申请人： Jeffrey D. Blais , Steve Sun , Bern Harrison , Narasinha C. Parasnis , Serban F. Peteu , Tony Nguyen , Paul Ripley , Xin Wang , Igor Gofman
发明人： Jeffrey D. Blais , Steve Sun , Bern Harrison , Narasinha C. Parasnis , Serban F. Peteu , Tony Nguyen , Paul Ripley , Xin Wang , Igor Gofman
IPC分类号： G01N25/20
CPC分类号： A61B5/14532 , A61B5/1455 , A61B5/1486 , A61B2560/0242 , A61B2560/0252 , G01N21/78 , G01N21/8483 , G01N27/3274
摘要： An assembly determines an analyte concentration in a sample of body fluid. The assembly includes a test sensor having a fluid-receiving area for receiving a sample of body fluid, where the fluid-receiving area contains a reagent that produces a measurable reaction with an analyte in the sample. The assembly also includes a meter having a port or opening configured to receive the test sensor; a measurement system configured to determine a measurement of the reaction between the reagent and the analyte; and a temperature-measuring system configured to determine a measurement of the test-sensor temperature when the test sensor is received into the opening. The meter determines a concentration of the analyte in the sample according to the measurement of the reaction and the measurement of the test-sensor temperature.
摘要翻译：组件确定体液样品中的分析物浓度。组件包括具有用于接收体液样本的流体接收区域的测试传感器，其中流体接收区域包含与样品中的分析物产生可测量反应的试剂。组件还包括具有端口或开口的表，该端口或开口被配置为接收测试传感器; 测量系统，被配置为确定所述试剂和所述分析物之间的反应的测量; 以及温度测量系统，被配置为当测试传感器被接收到开口中时确定测试传感器温度的测量。根据反应的测量和测试传感器温度的测量，仪表确定样品中分析物的浓度。

39. 发明申请

US20110191059A1 Systems and Methods for Predicting Ambient Temperature in a Fluid Analyte Meter 有权
标题翻译：用于预测流体分析仪中环境温度的系统和方法
公开(公告)号：US20110191059A1
公开(公告)日：2011-08-04
申请号：US13122098
申请日：2009-10-02
申请人： John Farrell , Harris Lieber , Hoi-Cheong Steve Sun , Mu Wu , Jun Chen , Igor Gofman , Jeffery S. Reynolds , Xin Wang , Gregory Stefkovic , Bern Harrison
发明人： John Farrell , Harris Lieber , Hoi-Cheong Steve Sun , Mu Wu , Jun Chen , Igor Gofman , Jeffery S. Reynolds , Xin Wang , Gregory Stefkovic , Bern Harrison
IPC分类号： G06F15/00
CPC分类号： A61B5/14532 , A61B2562/0295 , G01K7/427 , G01N33/48785
摘要： A system for a meter configured to determine an analyte concentration of a fluid sample includes a housing and a temperature sensor disposed within the housing. The system also includes a processor configured to receive temperature data from the temperature sensor upon the meter entering one of a charge state and a discharge state. The processor is further configured to predict a temperature value that approximates the ambient temperature outside of the housing. The predicted temperature value is based on historical temperature data received from the temperature sensor such that the predicted temperature value remains constant if a recently received temperature value remains within predetermined upper and lower temperature thresholds and the recently received temperature value exceeds the at least one predicted temperature value.
摘要翻译：配置用于确定流体样品的分析物浓度的仪表系统包括设置在壳体内的壳体和温度传感器。该系统还包括处理器，该处理器被配置为当仪表进入充电状态和放电状态之一时从温度传感器接收温度数据。处理器还被配置为预测近似于壳体外部的环境温度的温度值。预测温度值基于从温度传感器接收的历史温度数据，使得如果最近接收的温度值保持在预定的上限和下限温度阈值内并且最近接收的温度值超过至少一个预测温度，则预测温度值保持恒定值。

40. 发明申请

US20110169012A1 NANOWIRE AND LARGER GaN BASED HEMTS 有权
标题翻译： NANOWIRE和LARGER基于GaN的HEMTS
公开(公告)号：US20110169012A1
公开(公告)日：2011-07-14
申请号：US12246044
申请日：2008-10-06
申请人： Stephen D. Hersee , Xin Wang
发明人： Stephen D. Hersee , Xin Wang
IPC分类号： H01L27/105 , H01L29/778 , H01L21/338 , H01L21/8232
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02389 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/8252 , H01L27/0605 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L29/7788 , H01L29/7789
摘要： Nanowire and larger, post-based HEMTs, arrays of such HEMTs, and methods for their manufacture are provided. In one embodiment, a HEMT can include a III-N based core-shell structure including a core member (e.g., GaN), a shell member (e.g., AlGaN) surrounding a length of the core member and a two-dimensional electron gas (2-DEG) at the interface therebetween. The core member including a nanowire and/or a post can be disposed over a doped buffer layer and a gate material can be disposed around a portion of the shell member. Exemplary methods for making the nanowire HEMTs and arrays of nanowire HEMTs can include epitaxially forming nanowire(s) and epitaxially forming a shell member from each formed nanowire. Exemplary methods for making the post HEMTs and arrays of post HEMTs can include etching a III-N layer to form II-N post(s) followed by formation of the shell member(s).
摘要翻译：提供了纳米线和更大的后置HEMT，这样的HEMT的阵列及其制造方法。在一个实施例中，HEMT可以包括基于III-N的核 - 壳结构，其包括芯构件（例如，GaN），围绕芯构件的长度的壳构件（例如，AlGaN）和二维电子气 2-DEG）。包括纳米线和/或柱的芯构件可以设置在掺杂缓冲层上方，并且栅极材料可以围绕壳构件的一部分设置。用于制造纳米线HEMT和纳米线HEMT阵列的示例性方法可以包括外延形成纳米线并从每个形成的纳米线外延地形成壳部件。制备后HEMT和后HEMT阵列的示例性方法可以包括蚀刻III-N层以形成II-N柱，随后形成壳构件。

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