专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明专利

JP2000205832A GAP MEASURING INSTRUMENT USED FOR PLASMA REACTION DEVICE 失效
公开(公告)号：JP2000205832A
公开(公告)日：2000-07-28
申请号：JP1120499
申请日：1999-01-19
申请人： SHARP KK , MORI YUZO , JAPAN SCIENCE & TECH CORP
发明人： TAKEUCHI HIROAKI , OKUDA TORU , MORI YUZO , ISHIKAWA TOSHIO
IPC分类号： G01B11/14 , G02B26/10 , G02B26/12 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To accurately measure a gap without being affected by plasma light emission. SOLUTION: This measuring instrument 106 is used for the plasma reaction device 20 which performs at least one of filming, machining, and surface processes for a substrate by generating a plasma between an electrode 1 and the substrate 2 which are arranged opposite each other, and the gap G between the electrode 1 and substrate 2 is measured. Here, the device is equipped with a light projection unit 7 which irradiates the gap G with a light beam intermittently, a photodetection unit 8 which detects the quantity of a 2nd light beam after the 1st light beam passes through the gap G and outputs a photodetection signal consisting of a pulse signal corresponding to the light quantity, and a gap measurement part 106C which measures the gap G according to the photodetection signal.

42. 发明专利

JP2000005452A BUILDING BLOCKS TOY 失效
公开(公告)号：JP2000005452A
公开(公告)日：2000-01-11
申请号：JP18067798
申请日：1998-06-26
申请人： MORI YUZO
发明人： MORI YUZO
IPC分类号： G09B1/32 , A63H33/04
摘要： PROBLEM TO BE SOLVED: To learn the proper arrangement through the accomodation of building blocks by comprising a number of building blocks to be closely accomodated in a building blocks housing box, and forming the building blocks by plural kinds of rectangular parallelopiped obtained by providing each building block with a thickness (lateral width of plane) of integral times of a reference thickness, and the common vertical width and height of the plane. SOLUTION: A piece of building blocks P1-P10 comprises the combination of 13 pieces as P1 of a thickness (lateral width of plane) of one time of a reference thickness (for example, 1 cm), 5 pieces as P2 of a thickness of two times, 5 pieces as P3 of a thickness of three times, three pieces as P4 of a thickness of four times, 2 pieces as P5 of a thickness of five times, and each one as P6-P10 of the thicknesses of six to en times, as the minimum unit. Each unit is formed so that it can be closely accommodated in a housing box B. The building blocks P1-P10 have preferably different colors from one another by each thickness (lateral width of plane). Further, the multiples 1-10 to the reference thickness are indicated on each of building blocks P1-P10 so that they can be seen in a state that the building blocks are accommodated in the housing box B.

43. 发明专利

JPH11189879A FORMATION OF THIN FILM USING ROTARY ELECTRODE 失效
公开(公告)号：JPH11189879A
公开(公告)日：1999-07-13
申请号：JP36040897
申请日：1997-12-26
申请人： SANYO ELECTRIC CO , MORI YUZO
发明人： HIRANO HITOSHI , DOMOTO YOICHI , KURAMOTO KEIICHI , TARUI HISAKI , MORI YUZO
IPC分类号： C23C16/50 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To form a thin film more uniform in thickness on a substrate by rotating a rotary electrode around a rotating shaft, while passing the surface close to the surface of the substrate, impressing a high-frequency or DC power and making the shape of the electrode surface the shape along that of the substrate surface. SOLUTION: A rotary electrode 1 is rotated around a rotating shaft 2 and while the electrode surface is moved, is passed close to the surface of a substrate 3. Under such conditions, a high-frequency or DC power is impressed on the rotary electrode 1. Consequently, plasma is produced in a reacting gas kept at about 1 atm and the reacting gas is decomposed in the plasma to form a thin film on the substrate 3. The rotary electrode 1 in which the shape is along that of the substrate surface is used. For example, when the shape of the substrate 3 surface is curved, by matching it, the shape of the rotary electrode 1 is made to the curved shape in which the diameter of the central part 1a in the rotating shaft 2 direction is small and the diameters of both ends 1b and 1c are relatively large.

44. 发明专利

JPH11189877A THIN FILM FORMING DEVICE USING ROTARY ELECTRODE 失效
公开(公告)号：JPH11189877A
公开(公告)日：1999-07-13
申请号：JP36040697
申请日：1997-12-26
申请人： SANYO ELECTRIC CO , MORI YUZO
发明人： DOMOTO YOICHI , HIRANO HITOSHI , KURAMOTO KEIICHI , TARUI HISAKI , MORI YUZO
IPC分类号： C23C16/50 , C23C16/27 , C23C16/455 , C23C16/507 , H01L21/205 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To obtain a thin film forming device capable of swiftly and uniformly mixing a reaction gas to be newly fed with a dilution gas and thereby capable of forming uniform thin film in a thin film forming device using a rotary electrode 1. SOLUTION: This thin film forming device is the one in which a rotary electrode 1 provided in a reaction vessel 5 is applied with electric power from a high frequency power source 4 to generate plasma, and a reaction gas diluted with a dilution gas is decomposed to form thin film on a substrate 2, and in which a gas circulating path 10 exhausting the gas in the reaction vessel 5 and again returning it into the reaction vessel 5 is provided, and the reaction gas to be fed into the reaction vessel 5 is introduced from the gas introducing port 15 of the gas circulating path 10.

45. 发明专利

JPH11172449A THIN FILM FORMING DEVICE USING ROTARY ELECTRODE 失效
公开(公告)号：JPH11172449A
公开(公告)日：1999-06-29
申请号：JP34481397
申请日：1997-12-15
申请人： SANYO ELECTRIC CO , MORI YUZO
发明人： DOMOTO YOICHI , HIRANO HITOSHI , KURAMOTO KEIICHI , TARUI HISAKI , MORI YUZO
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23C16/50 , C23C16/507 , H01L21/205 , H05H1/48
摘要： PROBLEM TO BE SOLVED: To improve the film forming rate and to obtain a uniform thin film by applying high-frequency electric power or d.c. electric power to a rotary electrode moving in the vicinity of the surface of a substrate and spraying a reaction gas onto a space between the rotary electrode and the substrate in the generated plasma. SOLUTION: A substrate 2 is set to the surface of a substrate holder 3 provided in a chamber 6, and the upper direction thereof is provided with a rotary electrode 1 rotating by a rotary shaft 1b. The rotary shaft 1b rotates by a rotary means such as a motor or the like. The rotary shaft 1b is connected with a high-frequency power source 5 for feeding high-frequency electric power to the rotary electrode 1. The reaction gas spouts from the tip 4a of a reaction gas supply tube 4 provided on a space between the electrode surface 1a of the rotary electrode 1 and the substrate 2 and is ejected upon the space between the electrode surface 1a and the substrate 2. Since the reaction gas supply tube 4 has a width same as that of the rotary electrode 1, the reaction gas can uniformly be supplied. In this way, the diameter of the rotary electrode 1 is made small to reduce the plasma generation region, by which the generation of free fine particles is reduced.

46. 发明专利

JPH11170161A POLISHING DEVICE 失效
公开(公告)号：JPH11170161A
公开(公告)日：1999-06-29
申请号：JP33885297
申请日：1997-12-09
申请人： MORI YUZO , JAPAN SCIENCE & TECH CORP , KOYO SEIKO CO
发明人： MORI YUZO , HIRAOKA TAIJI , HAMAZAKI KOJI , MATSUMURA KENJIRO , KAWAGUCHI KOSHI
IPC分类号： B24B37/00
摘要： PROBLEM TO BE SOLVED: To provide a polishing device which can highly and stably hold a working phenomenon by EEM(Elastic Emission Machining). SOLUTION: A polishing device uses a working solution 100 in which powder particles having such a nature that it is combined with a workpiece 10 under interaction therebetwee are dispersed in pure water, and the working solution 100 is allowed to flow toward a surface 10a to be polished of the workpiece 10 by a flow generating part 61 so as to process the surface 10a to be polished thereof. The solution 100 is reserved in a closed tank 3 which accommodates therein worktables 22, 32, 42 for holding the workpiece 10, actuators 20, 30, 40 for moving the worktables in the closed tank 3, and the flow generating part 61, they are dipped in the working solution 100.

47. 发明专利

JPH111782A SHAPE GENERATING DEVICE 失效
公开(公告)号：JPH111782A
公开(公告)日：1999-01-06
申请号：JP15248097
申请日：1997-06-10
申请人： NIKON CORP , MORI YUZO
发明人： ITO HIROSHI , TAKINO HIDEO , MORI YUZO
IPC分类号： C23F4/00
摘要： PROBLEM TO BE SOLVED: To provide a shape generating device capable of stabilizing the plasma used for processing and generating a shape with high accuracy. SOLUTION: The surface of a work table 51 which is loaded with a work 10 and functions as its supporting part is provided with a forming base 20. The plasma P is formed between this forming base 20 and the front end 52a of an electrode 52 and this state is maintained until the plasma P stabilizes. The processing is thereafter executed by relatively moving the electrode 52 to the processing position on the work 10 by a positioning unit in the state of forming the plasma P.

48. 发明专利

JPH10337638A SHAPE CREATING METHOD 失效
公开(公告)号：JPH10337638A
公开(公告)日：1998-12-22
申请号：JP15093297
申请日：1997-06-09
申请人： NIKON CORP , MORI YUZO
发明人： TAKINO HIDEO , SHIBATA NORIO , ITO HIROSHI , KAWAMATA KATSUHIDE , MORI YUZO
IPC分类号： G02B3/00 , B23K15/00 , B23Q15/013 , B24B49/00 , C03C19/00 , C23F4/00
摘要： PROBLEM TO BE SOLVED: To create a good finishing surface without waviness. SOLUTION: Prior to the working, a working amount (e) (x, y) to be removed from a pre-working surface is calculated (S700), and also an approximation function of staying time which lessens the squared sum of the difference between the working amount (e) (x, y) and a theoretical value of the working amount is calculated by a least square method (S701). During the working, the staying time of working tool on each working point on a tool route is changed smoothly in accordance with the approximation function of the staying time.

49. 发明专利

JPH10284469A ELECTRODE FOR RADICAL REACTION TYPE WORKING DEVICE 失效
公开(公告)号：JPH10284469A
公开(公告)日：1998-10-23
申请号：JP8501797
申请日：1997-04-03
申请人： NIKON CORP , MORI YUZO
发明人： KOBAYASHI TERUNORI , MORI YUZO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To generate such plasma as converged into a shape appropriate for shape forming without degrading stable reaction gas flow, by providing, at an electrode part of such shape as rotationally symmetric about a rotation axis, a conductive member of conductive material and an insulating member of insulation material. SOLUTION: An electrode part 13 is spherical as a hole comprising a conductive member 1 and an insulating member 2, and the conductive member 1 is a spherical member 1a of aluminum and specified thickness while the radius of sphere is identical with that of the electrode part 13. Then, a work piece 9 is placed on a work table 10, and a high-frequency electric power is introduced into the conductive member 1 at the center of the electrode part 13 through a metal bearing 3b, and a plasma 7 is generated while a reaction gas is supplied between the work piece 9 and the conductive member 1. Thus, the generated plasma is converged only to the exposed part of the conductive member 1, and thanks to the viscous flow of reaction gas by the spherical electrode part 13, the reaction gas is stably supplied to a plasma generation part.

50. 发明专利

JPH10270420A MANUFACTURE OF THIN FILM ELEMENT AND DRY ETCHING METHOD 失效
公开(公告)号：JPH10270420A
公开(公告)日：1998-10-09
申请号：JP7018497
申请日：1997-03-24
申请人： SHARP KK , MORI YUZO
发明人： OKUDA TORU , NISHIKAWA KAZUHIRO , MORI YUZO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a thin film element manufacturing method by which residues can be removed in a relatively early stage of the whole manufacturing process and the productivity of the element can be improved, and then, the manufacturing cost of the element can be reduced. SOLUTION: After a first thin film pattern (pattern for contact) 7c and a second thin film pattern (pattern for picture element electrode) 8d are formed, the residue 12 resulting from a first thin film is removed by using the resistor 11 used for the formation of the second thin film pattern 8d as a mask. The dry etching device used for removing the residue 12 supplies a high-frequency voltage in a highly dense gas atmosphere and performs plasma treatment by preventing the peeling of the resist 11.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式