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    • 42. 发明申请
    • METHOD FOR INSPECTING CERAMIC STRUCTURES
    • 检查陶瓷结构的方法
    • WO2005095932A1
    • 2005-10-13
    • PCT/JP2005/006817
    • 2005-03-31
    • NGK INSULATORS, LTD.KATO, Shigeki
    • KATO, Shigeki
    • G01N23/04
    • G01N23/046G01N2223/419
    • There is provided a nondestructive method for inspecting ceramic structures, the method which not only easily detects the position and size of an internal defect in a ceramic structure in a short time, but also accurately identifies the position, shape, and size of the internal defect. In the method, the distribution of X-ray absorption coefficients (CT numbers) at fault planes of the ceramic structure is measured by irradiating the periphery of the ceramic structure with X rays along the periphery of the ceramic structure so that the X rays scan the entire periphery. The X rays are emitted from an X-ray tube at a tube voltage in the range of 80 to 400 kV and a tube current in the range of 2 to 400 mA.
    • 提供了一种用于检查陶瓷结构的非破坏性方法,该方法不仅可以在短时间内容易地检测陶瓷结构中的内部缺陷的位置和尺寸,而且可以精确地识别内部缺陷的位置,形状和尺寸 。 在该方法中,陶瓷结构的断层面的X射线吸收系数(CT数)的分布通过沿着陶瓷结构的周边用X射线照射陶瓷结构体的周边来测量,使得X射线扫描 整个周边。 X射线从X射线管以80〜400kV的管电压和2〜400mA范围内的管电流发射。
    • 45. 发明申请
    • SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • WO1998012756A1
    • 1998-03-26
    • PCT/JP1997003324
    • 1997-09-19
    • NGK INSULATORS, LTD.TERASAWA, YoshioSEKIYA, Takayuki
    • NGK INSULATORS, LTD.
    • H01L29/744
    • H01L21/30604H01L21/3086H01L21/31111H01L21/31144H01L29/7392
    • There are repeated the step of isotropically etching an oxide film (12) formed over the surface of a semiconductor substrate (11) through an opening (12a) to form a recess (11a), the step of anisotropically etching an oxide film (14) formed on the inner face of the recess to form an opening (14a), and the step of isotropically etching through the opening to form a recess (11b) succeeding to the recess (11a) through the opening (14a). A deep gate structure can be achieved within a short time while eliminating the overlapping errors of a mask, by using the overhangs of the openings formed in the oxide films (12, 14, 15 and 16) as the mask in all the following etching steps to repeat the isotropic and anisotropic etching steps through the same mask. The sectional shapes of the recesses are formed of a plurality of curved surfaces having different curvatures. It is possible to achieve a semiconductor device having recesses of a large aspect ratio (i.e., length/width ratio), i.e., of a larger depth than an opening width.
    • 重复对通过开口(12a)在半导体衬底(11)的表面上形成的氧化膜(12)进行各向同性蚀刻以形成凹部(11a)的步骤,各向异性蚀刻氧化膜(14)的步骤, 形成在所述凹部的内表面上以形成开口(14a),并且通过所述开口各向同性蚀刻以形成通过所述开口(14a)在所述凹部(11a)之后的凹部(11b)的步骤。 可以在短时间内实现深栅极结构,同时通过在所有后续蚀刻步骤中通过使用在氧化物膜(12,14,15和16)中形成的开口的突出部作为掩模来消除掩模的重叠误差 通过相同的掩模重复各向同性和各向异性蚀刻步骤。 凹部的截面形状由具有不同曲率的多个曲面形成。 可以实现具有大的纵横比(即长宽比)的凹槽,即比开口宽度更大的深度的半导体器件。
    • 46. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • WO1998012755A1
    • 1998-03-26
    • PCT/JP1997003276
    • 1997-09-17
    • NGK INSULATORS, LTD.TERASAWA, Yoshio
    • NGK INSULATORS, LTD.
    • H01L29/74
    • H01L29/66356H01L29/66416H01L29/7392H01L29/7722
    • An electrostatic induction type semiconductor device especially for a high electric power, a recess (12) is formed in one surface of a silicon substrate (11) of one conduction type, in which a gate region (13) of the opposite conduction type is formed in the bottom face of the recess, in which a recess (14) is formed in the portion which is surrounded by the adjoining gate regions, and in which an island cathode short-circuiting region (15) of the opposite conduction type is so formed in the bottom face of the recess as to extend to the surface of the silicon substrate. A cathode region (17) extending to the surface of the silicon substrate is formed to continue to a channel region (16) which is surrounded by the gate region (13) and the cathode short-circuiting region (15). A cathode electrode substrate (21) is mounted in contact with the cathode short-circuiting region (15) and the cathode region (17). The carriers to reside in the channel region is directly swept, when turned OFF, through the cathode short-circuiting region (15) to the cathode electrode substrate (21) so that the electrostatic induction type semiconductor device capable of breaking a high current at a high speed without increasing the ON resistance can be provided.
    • 特别是用于高功率的静电感应型半导体器件,在一个导电类型的硅衬底(11)的一个表面上形成凹槽(12),其中形成相反导电类型的栅极区域(13) 在所述凹部的底面中,在由相邻的栅极区域包围的部分中形成有凹部(14),并且形成有相反导电型的岛状阴极短路区域(15) 在凹槽的底面中延伸到硅衬底的表面。 形成延伸到硅衬底表面的阴极区域(17),以连续到由栅极区域(13)和阴极短路区域(15)围绕的沟道区域(16)。 阴极电极基板(21)与阴极短路区域(15)和阴极区域(17)接触地安装。 驻留在通道区域中的载流子在关闭时通过阴极短路区域(15)直接扫描到阴极电极基板(21),使得能够在一个或多个阴极电极基板上断开高电流的静电感应型半导体器件 可以提供高速度而不增加导通电阻。
    • 48. 发明申请
    • SOLID INSULATOR AND METHOD OF MANUFACTURING THE SAME
    • 固体绝缘体及其制造方法
    • WO1994008345A1
    • 1994-04-14
    • PCT/JP1993001354
    • 1993-09-21
    • NGK INSULATORS, LTD.ITOH, HiromuYAMAGUCHI, MakioITOH, NaohitoNAKAI, TakaoMORI, Shigeo
    • NGK INSULATORS, LTD.
    • H01B17/14
    • H01B17/14H01B19/00H01B19/04
    • The present invention aims at providing a solid insulator of a high strength, and a method of manufacturing the same. The solid insulator is characterized in that it consists of porcelain in which the quantity of crystals of cristobalite is not more than 10 %, an internal strain in the direction of compression in a columnar insulator body being larger in the diametrically inner portion thereof than in the diametrically outer portion thereof, the difference Y between the internal strain in the outer circumferential portion of the insulator body and that in the diametrically central portion thereof Y >= (1.76 x 10-6)X, wherein X(mm) represents the diameter of the insulator body. A method of manufacturing such a solid insulator is characterized in that a sintered insulator is quenched so as to increase the difference between the internal strain in the inner portion of the insulator and that in the outer portion thereof.
    • 本发明旨在提供一种高强度的固体绝缘体及其制造方法。 固体绝缘体的特征在于,其中方石英晶体的量不超过10%的陶瓷,柱状绝缘体的压缩方向的内部应变在直径方向内部比在 绝缘体的外周部的内部应变与其直径方向的中心部Y> =(1.76×10 -6)X的内部应变之间的差异Y,其中X(mm)表示直径 绝缘子体。 制造这种固体绝缘体的方法的特征在于,烧结绝缘体被淬火以增加绝缘体的内部部分和其外部部分中的内部应变之间的差异。