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41. 发明授权

US06808954B2 Vacuum-cavity MEMS resonator 失效
标题翻译：真空腔MEMS谐振器
公开(公告)号：US06808954B2
公开(公告)日：2004-10-26
申请号：US09949368
申请日：2001-09-07
申请人： Qing Ma , Peng Cheng , Valluri Rao
发明人： Qing Ma , Peng Cheng , Valluri Rao
IPC分类号： H01L2100
CPC分类号： B81B7/0077 , H03H3/0072 , H03H9/1057 , H03H9/2405 , H03H9/2431 , H03H9/2457 , H03H9/2463 , H03H2009/02503 , H03H2009/02511
摘要： A microelectromechanical (MEMS) resonator with a vacuum-cavity is fabricated using polysilicon-enabled release methods. A vacuum-cavity surrounding the MEMS beam is formed by removing release material that surrounds the beam and sealing the resulting cavity under vacuum by depositing a layer of nitride over the structure. The vacuum-cavity MEMS resonators have cantilever beams, bridge beams or breathing-bar beams.
摘要翻译：具有真空腔的微机电（MEMS）谐振器是使用多晶硅启用释放方法制造的。围绕MEMS光束的真空腔通过去除围绕光束的释放材料并通过在结构上沉积氮化层而在真空下密封所得空腔来形成。真空腔MEMS谐振器具有悬臂梁，桥梁或呼吸杆梁。

42. 发明授权

US06753639B2 Micro-electromechanical structure resonator frequency adjustment using radiant energy trimming and laser/focused ion beam assisted deposition 有权
标题翻译：微机电结构谐振器频率调整采用辐射能量修整和激光/聚焦离子束辅助沉积
公开(公告)号：US06753639B2
公开(公告)日：2004-06-22
申请号：US10386062
申请日：2003-03-10
申请人： Qing Ma , Peng Cheng , Valluri Rao
发明人： Qing Ma , Peng Cheng , Valluri Rao
IPC分类号： H02N200
CPC分类号： B81C1/0015 , B81B2201/0271 , B81C2201/053 , H03H9/02393 , H03H9/2405 , H03H2009/02511 , Y10T29/49105 , Y10T29/4916
摘要： The invention relates to a microbeam oscillator. Tuning of the oscillator is carried out by addition or subtraction of material to an oscillator member in order to change the mass of the oscillator member.
摘要翻译：本发明涉及一种微波振荡器。振荡器的调谐是通过对振荡器元件进行加法或减法来实现的，以便改变振荡器元件的质量。

43. 发明授权

US6063688A Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition 失效
公开(公告)号：US6063688A
公开(公告)日：2000-05-16
申请号：US939578
申请日：1997-09-29
申请人： Brian S. Doyle , Peng Cheng
发明人： Brian S. Doyle , Peng Cheng
IPC分类号： H01L21/033 , H01L21/335 , H01L21/762 , H01L21/8234 , H01L21/76
CPC分类号： B82Y10/00 , H01L21/0337 , H01L21/0338 , H01L21/762 , H01L21/823437 , H01L29/66439 , H01L29/0665 , H01L29/66795 , H01L29/785 , Y10S438/946 , Y10S438/947
摘要： The invention relates to a method of forming reduced feature size spacers. The method includes providing a semiconductor substrate having an area region; patterning a first spacer over a portion of the area region of the substrate, the first spacer having a first thickness and opposing side portions; patterning a pair of second spacers, each second spacer adjacent to a side portion of the first spacer, each second spacer having a second thickness in opposing side portions, wherein the second thickness is less than the first thickness; removing the first spacer; patterning a plurality of third spacers, each third spacer adjacent to one of the side portions of one of the second spacers, each one of the third spacers having a third thickness, wherein the third thickness is less than the second thickness; and removing the second spacers. The invention also relates to a field of effect transistor. The transistor includes a semiconductor substrate having a source region and a drain region; a gate area of the substrate surface; a channel region in the substrate having a cross-sectional area defined by a portion of the gate area, a channel length measured accross a portion of the channel region between the source region and the drain region; and a trench formed in a portion of the channel region, the trench having a trench length substantially equivalent to the channel length.

44. 发明授权

US6022815A Method of fabricating next-to-minimum-size transistor gate using mask-edge gate definition technique 失效
标题翻译：使用掩模边缘栅极定义技术制造下一个最小尺寸晶体管栅极的方法
公开(公告)号：US6022815A
公开(公告)日：2000-02-08
申请号：US775412
申请日：1996-12-31
申请人： Brian S. Doyle , Chunlin Liang , Peng Cheng , Qi-De Qian
发明人： Brian S. Doyle , Chunlin Liang , Peng Cheng , Qi-De Qian
IPC分类号： H01L21/033 , H01L21/28 , H01L21/3213 , H01L21/8234 , H01L21/3205
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/0338 , H01L21/28132 , H01L21/823456
摘要： A method of fabricating minimum size and next-to-minimum size electrically conductive members using a litho-less process is disclosed. A substrate is provided, and a layer of gate dielectric material is formed on the substrate. A layer of electrically conductive material is formed over the gate dielectric material. A first mask is used to form a hard mask. A layer of first spacer material is deposited over the existing structures, and the layer of first spacer material is etched back to form spacers adjacent to the hard mask. The width of the first spacers determines the minimum size gate length. A layer of second spacer material is deposited over the existing structures, including the hard mask and first spacers. The layer of second spacer material is etched back to form a second set of spacers adjacent to the first spacers. The width of the first and second spacers together determine the next-to-minimum size gate length. A second mask is used to protect the portion of the second spacers which are to be used to define next-to-minimum size gates, and the unprotected second spacers and the hard mask are removed. The exposed electrically conductive material is removed. The remaining spacers are then removed, leaving minimum size and next-to-minimum size gates.
摘要翻译：公开了使用无平滑工艺制造最小尺寸和接下来尺寸的导电构件的方法。提供衬底，并且在衬底上形成栅极电介质材料层。在栅极电介质材料上方形成一层导电材料。使用第一个掩模形成硬掩模。在现有结构上沉积第一间隔物层，并且将第一间隔物材料层回蚀刻以形成与硬掩模相邻的间隔物。第一间隔物的宽度决定了栅极长度的最小尺寸。在现有结构上沉积第二间隔物层，包括硬掩模和第一间隔物。第二间隔物材料层被回蚀刻以形成邻近第一间隔物的第二组间隔物。第一和第二间隔物的宽度一起确定下一个至最小尺寸的栅极长度。使用第二掩模来保护用于限定下一个至最小尺寸的门的第二间隔物的部分，并且去除未受保护的第二间隔物和硬掩模。暴露的导电材料被去除。然后移除剩余的间隔物，留下最小尺寸和下至最小尺寸的门。

45. 发明授权

US5918132A Method for narrow space formation and self-aligned channel implant 失效
标题翻译：狭窄空间形成和自对准通道植入的方法
公开(公告)号：US5918132A
公开(公告)日：1999-06-29
申请号：US775722
申请日：1996-12-31
申请人： Qi-De Qian , Peng Cheng
发明人： Qi-De Qian , Peng Cheng
IPC分类号： H01L21/033 , H01L21/28 , H01L21/336 , H01L29/10 , H01L29/423
CPC分类号： H01L29/1033 , H01L21/0338 , H01L21/28114 , H01L21/28141 , H01L29/66537 , H01L29/66583 , H01L29/66621 , H01L29/78 , H01L29/1083
摘要： A method of forming a narrow space using a litho-less process is disclosed. A first mask is formed on a substrate, the first mask having an edge. A spacer is then formed adjacent to the edge. A second mask is subsequently formed adjacent to the spacer. The spacer is then removed.
摘要翻译：公开了一种使用无光刻工艺形成狭窄空间的方法。第一掩模形成在基板上，第一掩模具有边缘。然后在边缘附近形成间隔物。随后在间隔物附近形成第二掩模。然后移除间隔物。

46. 发明申请

US20130277804A1 BIPOLAR JUNCTION TRANSISTORS WITH REDUCED BASE-COLLECTOR JUNCTION CAPACITANCE 审中-公开
标题翻译：具有降低的基极集电极结电容的双极晶体管
公开(公告)号：US20130277804A1
公开(公告)日：2013-10-24
申请号：US13452335
申请日：2012-04-20
申请人： Peng Cheng , David L. Harame , Robert K. Leidy , Qizhi Liu
发明人： Peng Cheng , David L. Harame , Robert K. Leidy , Qizhi Liu
IPC分类号： H01L29/732 , G06F17/50 , H01L21/331
CPC分类号： H01L29/66287 , H01L29/0649 , H01L29/0804 , H01L29/7325
摘要： Methods for fabricating a device structure such as a bipolar junction transistor, device structures for a bipolar junction transistor, and design structures for a bipolar junction transistor. The device structure includes a collector region formed in a substrate, an intrinsic base coextensive with the collector region, an emitter coupled with the intrinsic base, a first isolation region surrounding the collector region, and a second isolation region formed at least partially within the collector region. The first isolation region has a first sidewall and the second isolation region having a second sidewall peripherally inside the first sidewall. A portion of the collector region is disposed between the first sidewall of the first isolation region and the second sidewall of the second isolation region.
摘要翻译：用于制造诸如双极结型晶体管的器件结构的方法，用于双极结型晶体管的器件结构以及用于双极结型晶体管的设计结构。器件结构包括形成在衬底中的集电极区域，与集电极区域共同延伸的本征基极，与本征基极耦合的发射极，围绕集电极区域的第一隔离区域和至少部分地形成在集电极区域内的第二隔离区域地区。第一隔离区域具有第一侧壁，第二隔离区域在第一侧壁周围具有第二侧壁。集电极区域的一部分设置在第一隔离区域的第一侧壁和第二隔离区域的第二侧壁之间。

47. 发明申请

US20120271545A1 METHOD AND APPARATUS FOR PROVIDING A MULTI-DIMENSIONAL DATA INTERFACE 审中-公开
标题翻译：用于提供多维数据接口的方法和装置
公开(公告)号：US20120271545A1
公开(公告)日：2012-10-25
申请号：US13089870
申请日：2011-04-19
申请人： Peng Cheng
发明人： Peng Cheng
IPC分类号： G01C21/36
CPC分类号： G06F1/169 , G06F1/1692 , G06F3/04815 , G06F3/0483 , G06F3/0488 , G06F2203/0339
摘要： Various methods for providing a multi-dimensional data interface are provided. One example method may include receiving first data navigation instructions for navigating data in a first dimension or a second dimension via a first user interface device, causing a presentation of the data to be modified within the first dimension or the second dimension in response to at least receiving the first data navigation instructions, receiving second data navigation instructions for navigating the data in a third dimension via a second user interface device, and causing the presentation of the data to be modified within a third dimension in response to at least receiving the second data navigation instructions. Similar and related example methods, example apparatuses, and example computer program products are also provided.
摘要翻译：提供了用于提供多维数据接口的各种方法。一个示例性方法可以包括接收用于经由第一用户界面设备导航第一维度或第二维度中的数据的第一数据导航指令，以响应于至少在第一维度或第二维度中对数据进行修改接收第一数据导航指令，接收用于经由第二用户界面设备导航第三维度中的数据的第二数据导航指令，并且响应于至少接收第二数据使得在第三维度内修改数据的呈现导航说明。还提供了类似的和相关的示例性方法，示例性装置和示例性计算机程序产品。

48. 发明申请

US20110259039A1 Thermally Driven Heat Pump for Heating and Cooling 审中-公开
标题翻译：用于加热和冷却的热驱动热泵
公开(公告)号：US20110259039A1
公开(公告)日：2011-10-27
申请号：US12745168
申请日：2008-11-26
申请人： Hongbin Ma , Joseph A. Boswell , Peng Cheng
发明人： Hongbin Ma , Joseph A. Boswell , Peng Cheng
IPC分类号： F25B17/00 , F25B41/00
CPC分类号： F25B1/08 , F25B15/02 , F25B2341/0011 , F25B2341/0015 , Y02A30/277 , Y02B30/62
摘要： A thermally driven heat pump includes a low temperature evaporator for evaporating cooling fluid to remove heat A first heat exchanger located at an outlet of a converging/diverging chamber of a first ejector receives a flow of primary fluid vapor and cooling fluid vapor ejected from the first ejector for condensing a portion of the cooling fluid vapor An absorber located in the first heat exchanger absorbs cooling fluid vapor into an absorbing fluid to reduce the pressure in the first heat exchanger A second heat exchanger located at an outlet of a converging/diverging chamber of a second ejector receives primary fluid vapor and cooling fluid vapor ejected from the second ejector for condensing the cooling fluid vapor and the primary fluid vapor A separator in communication with the second ejector, the low temperature evaporator and the primary fluid evaporator separates the primary fluid from the cooling fluid.
摘要翻译：热驱动热泵包括用于蒸发冷却流体以去除热量的低温蒸发器。位于第一喷射器的会聚/发散室的出口处的第一热交换器接收从第一喷射器喷射的主流体蒸气和冷却流体蒸汽的流动用于冷凝冷却流体蒸气的一部分的喷射器位于第一热交换器中的吸收器将冷却流体蒸气吸收到吸收流体中以降低第一热交换器中的压力位于位于会聚/发散室的出口处的第二热交换器第二喷射器接收从第二喷射器喷射的主要流体蒸汽和冷却流体蒸气，用于冷凝冷却流体蒸气和与第二喷射器连通的主流体蒸汽A分离器，低温蒸发器和主流体蒸发器将主流体从冷却液。

49. 发明授权

US07245057B2 Micro-electromechanical structure resonator frequency adjustment using radiant energy trimming and laser/focused ion beam assisted deposition 有权
标题翻译：微机电结构谐振器频率调整采用辐射能量修整和激光/聚焦离子束辅助沉积
公开(公告)号：US07245057B2
公开(公告)日：2007-07-17
申请号：US10763779
申请日：2004-01-22
申请人： Qing Ma , Peng Cheng , Valluri Rao
发明人： Qing Ma , Peng Cheng , Valluri Rao
IPC分类号： H01L41/08
CPC分类号： B81C1/0015 , B81B2201/0271 , B81C2201/053 , H03H9/02393 , H03H9/2405 , H03H2009/02511 , Y10T29/49105 , Y10T29/4916
摘要： The invention relates to a microbeam oscillator. Tuning of the oscillator is carried out by addition or subtraction of material to an oscillator member in order to change the mass of the oscillator member.
摘要翻译：本发明涉及一种微波振荡器。振荡器的调谐是通过对振荡器元件进行加法或减法来实现的，以便改变振荡器元件的质量。

50. 发明申请

US20060027891A1 Sacrificial layer technique to make gaps in MEMS applications 有权
标题翻译：牺牲层技术在MEMS应用中产生空白
公开(公告)号：US20060027891A1
公开(公告)日：2006-02-09
申请号：US11241024
申请日：2005-09-30
申请人： Qing Ma , Peng Cheng
发明人： Qing Ma , Peng Cheng
IPC分类号： H01L29/00
CPC分类号： B81C1/00126 , B81C2201/0109 , H03H3/0072
摘要： A method comprising over an area of a substrate, forming a plurality of three dimensional first structures; following forming the first structures, conformally introducing a sacrificial material over the area of the substrate; introducing a second structural material over the sacrificial material; and removing the sacrificial material. An apparatus comprising a first structure on a substrate; and a second structure on the substrate and separated from the first structure by an unfilled gap defined by the thickness of a removed film.
摘要翻译：一种方法，包括在衬底的一个区域上，形成多个三维第一结构; 在形成第一结构之后，在衬底的区域上保形地引入牺牲材料; 在牺牲材料上引入第二结构材料; 并去除牺牲材料。一种装置，包括在基板上的第一结构; 以及第二结构，并且通过由去除膜的厚度限定的未填充间隙与第一结构分离。

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