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41. 发明公开

EP3238308A1 DISPOSITIF DE CONTRÔLE POUR LIGNE D'ALIMENTATION ÉLECTRIQUE 审中-公开
标题翻译： DispOSITIF DECONTRÔLEPOUR LIGNE D'ALIMENTATIONÉLECTRIQUE
公开(公告)号：EP3238308A1
公开(公告)日：2017-11-01
申请号：EP15823673.7
申请日：2015-12-18
申请人： Safran Electrical & Power
发明人： BALPE, Cédric , LHOMMEAU, Tony
IPC分类号： H02H3/087 , H02H3/02 , H02H9/02 , H03K17/081
CPC分类号： H03K17/04113 , H02H3/025 , H02H3/087 , H02H9/02 , H03K17/04126 , H03K17/08112 , H03K17/60 , H03K17/74 , H03K2017/226
摘要： The invention relates to a control device intended for being positioned between two portions (2a, 2b) of a power supply line. According to one general characteristic, the device includes a bipolar transistor (3) including a wide-bandgap semiconductor material, in which the emitter (4b) is connected to one portion of the supply line (2b) and the collector (4a) is connected to another portion (2a) of the supply line, the device further including control means (6) connected to the base (4c) of said transistor.
摘要翻译：本发明涉及一种用于定位在电源线的两个部分（2a，2b）之间的控制装置。根据一个一般特征，该器件包括包含宽带隙半导体材料的双极晶体管（3），其中发射极（4b）连接到供应线路（2b）的一部分并且集电极（4a）连接到电源线的另一部分（2a），该装置还包括连接到所述晶体管的基极（4c）的控制装置（6）。

42. 发明授权

EP0388896B1 Buffer circuit with an electrostatic protector 失效
标题翻译：缓冲电路的静电保护
公开(公告)号：EP0388896B1
公开(公告)日：1997-07-02
申请号：EP90105250.6
申请日：1990-03-20
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Itoh, Masashi, c/o Intellectual Property Division
IPC分类号： H03K17/08
CPC分类号： H03K17/08112 , H03K17/16 , H03K17/603 , H03K17/6242 , H03K17/6271

43. 发明授权

EP0602496B1 Tristate-fähige Treiberschaltung 失效
标题翻译：启用三驱动电路
公开(公告)号：EP0602496B1
公开(公告)日：1997-03-19
申请号：EP93119637.2
申请日：1993-12-06
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Berthold, Jörg, Dr. , Nebel, Gerhard , Schmitt-Landsiedel, Doris, Dr.
IPC分类号： H03K19/0175 , H03K19/003 , H03K17/08
CPC分类号： H03K17/08112 , H03K19/00307 , H03K19/09429 , H03K19/09448

44. 发明公开

KR1020120018657A 차량용 스위치 有权
标题翻译：车辆使用开关
公开(公告)号：KR1020120018657A
公开(公告)日：2012-03-05
申请号：KR1020100081633
申请日：2010-08-23
申请人： 엘지이노텍 주식회사
发明人： 이정세
IPC分类号： H03K17/08 , H03K17/081 , B60R16/02 , B60Q1/14
CPC分类号： H03K17/08 , B60Q1/1476 , B60R16/02 , H03K17/08112
摘要： PURPOSE: A switch for a vehicle is provided to prevent a leakage current flowing into a microcontroller in an off state through an outer switch by supplying power to a switch for a vehicle only when the microcontroller is in an operational mode. CONSTITUTION: A switch for a vehicle includes outer switch modules(30,40,50) which include a plurality of outer switches(SW21, SW22, SW23). The plurality of the outer switch modules is respectively independently connected with second distribution resistances(R14) in parallel. A leakage current prevention device(60) is supplied with a voltage corresponding to a distribution voltage of the second distribution resistance in an on-state. The plurality of the outer switch modules forms a distribution resistance, which is individually formed, into a first distribution resistance(R11) to check the input state of each outer switch.
摘要翻译：目的：提供一种用于车辆的开关，用于通过仅当微控制器处于操作模式时通过向车辆的开关供电才能通过外部开关流入处于断开状态的微控制器的漏电流。构成：用于车辆的开关包括包括多个外部开关（SW21，SW22，SW23）的外部开关模块（30,40,50）。多个外部开关模块分别独立地与第二分配电阻（R14）并联连接。泄漏电流防止装置（60）在导通状态下被提供与第二分配电阻的分配电压相对应的电压。多个外部开关模块将分别形成的分配电阻形成为第一分配电阻（R11），以检查每个外部开关的输入状态。

45. 发明授权

KR1019930009026B1 정전보호회로 失效
标题翻译：静电保护电路
公开(公告)号：KR1019930009026B1
公开(公告)日：1993-09-18
申请号：KR1019900003733
申请日：1990-03-20
申请人： 가부시끼가이샤 도시바
发明人： 이토마사시
IPC分类号： H01L27/04
CPC分类号： H03K17/08112 , H03K17/16 , H03K17/603 , H03K17/6242 , H03K17/6271
摘要： 내용 없음.

46. 发明申请

US20170366179A1 CONTROL DEVICE FOR POWER SUPPLY LINE 审中-公开
公开(公告)号：US20170366179A1
公开(公告)日：2017-12-21
申请号：US15538730
申请日：2015-12-18
申请人： SAFRAN ELECTRICAL & POWER
发明人： Cedric BALPE , Tony LHOMMEAU
IPC分类号： H03K17/041 , H03K17/74 , H03K17/60 , H03K17/0412 , H02H9/02 , H02H3/087 , H03K17/081 , H02H3/02 , H03K17/22
CPC分类号： H03K17/04113 , H02H3/025 , H02H3/087 , H02H9/02 , H03K17/04126 , H03K17/08112 , H03K17/60 , H03K17/74 , H03K2017/226
摘要： A control device for connecting between two portions of an electrical power supply line. The device includes a bipolar transistor including a wide bandgap semiconductor material and having its emitter connected to one portion of the power supply line, its collector connected to another portion of the power supply line, and the device also including control connected to the base of the transistor.

47. 发明授权

US09787298B2 Operation of double-base bipolar transistors with additional timing phases at switching transitions 有权
公开(公告)号：US09787298B2
公开(公告)日：2017-10-10
申请号：US15267085
申请日：2016-09-15
申请人： Ideal Power Inc.
发明人： William C. Alexander , Richard A. Blanchard
IPC分类号： H01L29/73 , H03K17/06 , H01L29/16 , H01L29/735 , H01L27/06 , H01L29/10 , H01L29/08 , H03K17/66 , H03K17/68 , H01L29/747
CPC分类号： H01L29/0619 , H01L27/0694 , H01L29/0808 , H01L29/0821 , H01L29/1004 , H01L29/1008 , H01L29/16 , H01L29/66295 , H01L29/732 , H01L29/735 , H01L29/7393 , H01L29/747 , H03K17/06 , H03K17/08112 , H03K17/66 , H03K17/665 , H03K17/68 , H03K2217/0054 , H03K2217/0063 , H03K2217/0072
摘要： Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.

48. 发明授权

US08629710B2 Sensor output IC and sensor device 有权
标题翻译：传感器输出IC和传感器设备
公开(公告)号：US08629710B2
公开(公告)日：2014-01-14
申请号：US12977955
申请日：2010-12-23
申请人： Yasuchika Konishi
发明人： Yasuchika Konishi
IPC分类号： H01L35/00
CPC分类号： H03K17/08112 , H03K17/08126
摘要： A sensor output IC has a switching element that turns on and off between output terminals based on a detection signal from a sensor, and a temperature-limiting circuit that maintains the switching element in an off state when a temperature at the sensor output IC becomes a predetermined value or more.
摘要翻译：传感器输出IC具有基于来自传感器的检测信号在输出端子之间导通和断开的开关元件，以及当传感器输出IC的温度变为1时将开关元件保持在断开状态的限温电路预定值以上。

49. 发明授权

US06388496B1 Semiconductor output circuit 失效
标题翻译：半导体输出电路
公开(公告)号：US06388496B1
公开(公告)日：2002-05-14
申请号：US09549512
申请日：2000-04-14
申请人： Hiroyuki Tsurumi , Toshiro Kubota
发明人： Hiroyuki Tsurumi , Toshiro Kubota
IPC分类号： H03K508
CPC分类号： H03F3/3081 , H03F3/3432 , H03F3/68 , H03K17/08112 , H03K17/663
摘要： The present invention relates to a semiconductor output circuit that protects a circuit including such a reverse operation as reverses the potentials of a collector and an emitter of a bipolar transistor. A cathode of a protective diode is connected to a P type side of a base-emitter PN junction of a bipolar transistor constituting a semiconductor output circuit, while an anode of the protective diode is connected to an N type side of the base-emitter PN junction. By positively operating the bipolar transistor in a reverse direction with a reverse current gain &bgr;R>1, a reverse voltage between a collector and an emitter of the bipolar transistor is precluded from exceeding Veco to prevent the transistor from being broken down due to its reverse operation. In addition, by connecting the anode of the protective diode to a P type side of a base-collector PN junction of the bipolar transistor constituting the semiconductor output circuit, while connecting the cathode of the protective diode to an N type side of the base-collector junction, Veco is increased to a higher level within the entire circuit to prevent the bipolar transistor from being broken down due to its reverse operation.
摘要翻译：本发明涉及一种半导体输出电路，其保护包括这样的反向操作的电路，以反转双极晶体管的集电极和发射极的电位。保护二极管的阴极连接到构成半导体输出电路的双极晶体管的基极 - 发射极PN结的P型侧，而保护二极管的阳极连接到基极 - 发射极PN的N型侧交界处通过在反向电流增益βR> 1的情况下以相反方向正极操作双极晶体管，双极晶体管的集电极和发射极之间的反向电压不会超过Veco，以防止晶体管由于其反向操作而分解。此外，通过将保护二极管的阳极连接到构成半导体输出电路的双极晶体管的基极集电极PN结的P型侧，同时将保护二极管的阴极连接到基极集电极PN结的N型侧，集电极结，Veco在整个电路内增加到更高的电平，以防止双极晶体管由于其反向操作而分解。

50. 发明授权

US5371423A Tri-state-capable driver circuit 失效
标题翻译：三状态驱动电路
公开(公告)号：US5371423A
公开(公告)日：1994-12-06
申请号：US107960
申请日：1993-08-17
申请人： Joerg Berthold , Gerhard Nebel , Doris Schmitt-Landsiedel
发明人： Joerg Berthold , Gerhard Nebel , Doris Schmitt-Landsiedel
IPC分类号： H03K17/567 , H03K17/081 , H03K19/003 , H03K19/0175 , H03K19/094 , H03K19/0944 , H03K19/02
CPC分类号： H03K17/08112 , H03K19/00307 , H03K19/09429 , H03K19/09448
摘要： A tri-state capable driver circuit or totem pole circuit is formed in BiCMOS technology and includes a selection circuit, first and second drive circuits, and first and second bipolar transistors. A short circuit unit is connected between the base and the emitter of the first bipolar transistor to prevent excessively high inhibit voltages across the base-emitter junction of the first bipolar transistor. The operation of the short circuit unit depends upon signals received at the tri-state activation input.
摘要翻译：具有三态的驱动器电路或图腾柱电路以BiCMOS技术形成，包括选择电路，第一和第二驱动电路以及第一和第二双极晶体管。短路单元连接在第一双极晶体管的基极和发射极之间，以防止跨越第一双极晶体管的基极 - 发射极结的过高的抑制电压。短路单元的操作取决于在三态激活输入端接收到的信号。

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