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41. 发明专利

JP2005247657A Crystal growth method of group iii nitride and group iii nitride crystal 有权
标题翻译： III类氮化物和III类氮化物晶体的晶体生长方法
公开(公告)号：JP2005247657A
公开(公告)日：2005-09-15
申请号：JP2004062537
申请日：2004-03-05
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： IWATA HIROKAZU , SARAYAMA SHOJI , YAMANE HISANORI , SHIMADA MASAHIKO
IPC分类号： C30B11/12 , C30B9/10 , C30B29/38
摘要： PROBLEM TO BE SOLVED: To provide a crystal growth method of group III nitride by which the flux ratio in a melt can be controlled to a desired ratio.
SOLUTION: The crystal growth method of group III nitride is carried out by preparing a melt 28 in which a group III metal, flux, and nitrogen are dissolved to form a gas-liquid interface with an atmospheric gas containing the nitrogen source gas and the flux gas, and growing a crystal of the group III nitride 31 from the group III metal and nitrogen by dissolving the nitrogen through the gas-liquid interface into the melt. The group III nitride crystal 31 is grown while controlling the flux ratio in the melt 28 by controlling the pressure of the flux gas in the atmospheric gas in contact with the melt 28 on the gas-liquid interface.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供III族氮化物的晶体生长方法，通过该方法可以将熔体中的通量比控制到所需的比例。解决方案：通过制备其中溶解第III族金属，助熔剂和氮的熔体28与包含氮源气体的气氛气体形成气液界面来进行III族氮化物的晶体生长方法和助熔气体，并且通过将氮气通过气 - 液界面溶解到熔体中，从III族金属和氮生长III族氮化物31的晶体。通过控制与气液界面上的熔体28接触的大气气体中的磁通气体的压力来控制熔融物28中的通量比，生长III族氮化物晶体31。版权所有（C）2005，JPO＆NCIPI

42. 发明专利

JP2004256392A METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR CRYSTAL AND COMPOUND SEMICONDUCTOR CRYSTAL 审中-公开
公开(公告)号：JP2004256392A
公开(公告)日：2004-09-16
申请号：JP2004177249
申请日：2004-06-15
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： KAWASE TOMOHIRO , SAWADA SHINICHI , TATSUMI MASAMI
IPC分类号： C30B11/00 , C30B11/06 , C30B11/12 , C30B27/00 , C30B29/42
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor crystal by which carbon is added to a compound semiconductor crystal with remarkably high reproducibility and a compound semiconductor crystal manufactured by the method. SOLUTION: The method of manufacturing the compound semiconductor crystal comprizes a step for hermetically sealing gaseous carbon oxide 7 having a prescribed partial pressure and a compound semiconductor raw material 2 in a gas-impermeable airtight vessel 8, a step for melting the compound semiconductor raw material 2 hermetically sealed in the airtight vessel 8 by elevating the temperature of the airtight vessel 8 and a step for growing the compound semiconductor crystal containing a prescribed quantity of carbon by lowering the temperature of the airtight vessel 8 to solidify the melted compound semiconductor crystal raw material 2. COPYRIGHT: (C)2004,JPO&NCIPI

43. 发明专利

JP2004168650A Group iii nitride crystal, method and apparatus for growing group iii nitride crystal, and semiconductor device and system equipped with it 有权
公开(公告)号：JP2004168650A
公开(公告)日：2004-06-17
申请号：JP2003376768
申请日：2003-11-06
申请人： Ricoh Co Ltd , 株式会社リコー
发明人： IWATA HIROKAZU , SARAYAMA SHOJI
IPC分类号： C30B29/38 , C30B11/12 , H01L27/14 , H01L31/0264 , H01L33/32 , H01L33/40 , H01L33/62 , H01S5/323 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To perform stable growth of a group III nitride crystal by preventing crystal aggregate covering the surface of a mixed melt from being formed near the surface. SOLUTION: In a reaction vessel 11, a mixed melt 25 is formed from an alkali metal and a substance containing a group III metal; from the mixed melt 25 and a nitrogen-containing substance, a crystal of a group III nitride 24 composed of a group III metal and nitrogen is grown. In growing the crystal, the rate of increase in supersaturation degree of the group III nitride near the surface of the mixed melt 25 is controlled. COPYRIGHT: (C)2004,JPO

44. 发明专利

JP2003160398A METHOD AND APPARATUS FOR GROWTH OF GROUP III NITRIDE CRYSTAL 审中-公开
公开(公告)号：JP2003160398A
公开(公告)日：2003-06-03
申请号：JP2001355720
申请日：2001-11-21
申请人： RICOH KK
发明人： SARAYAMA SHOJI , IWATA HIROKAZU , YAMANE HISANORI , SHIMADA MASAHIKO , ARAKI TAKASHI
IPC分类号： C30B29/38 , C30B11/12
摘要： PROBLEM TO BE SOLVED: To supply group III raw materials more stably into a reaction vessel when supplying group III raw materials and group V raw materials into the reaction vessel from the outside. SOLUTION: Substance 110 including at least a metal of group III can be fed into a reaction vessel 101 by the dead weight of the substance 110 by elevating the height of a container 109 which is outside the reaction vessel 101 and accommodating the substance 110. COPYRIGHT: (C)2003,JPO

45. 发明专利

JP2821061B2 失效
公开(公告)号：JP2821061B2
公开(公告)日：1998-11-05
申请号：JP15411892
申请日：1992-05-22
IPC分类号： C30B25/18 , C30B11/00 , C30B11/12 , C30B29/06 , C30B29/62 , G01R1/067

46. 发明专利

JPH0733597A ELECTROCONDUCTIVE NEEDLE SINGLE CRYSTAL AND EMBEDDED PRODUCT 失效
公开(公告)号：JPH0733597A
公开(公告)日：1995-02-03
申请号：JP18504993
申请日：1993-07-27
申请人： DENKI KAGAKU KOGYO KK
发明人： AMAMIYA MASARU , KATO KAZUO
IPC分类号： C30B11/12 , C30B29/62 , G01Q60/16 , G01Q60/38 , G01Q70/10 , G01Q70/16 , G01R1/067 , H01B1/00 , H01B1/08 , H01B1/14 , H01L21/66 , H01L29/06
摘要： PURPOSE:To obtain an electroconductive needle single crystal which can be used as a probe for measuring the electric properties of semiconductor integrated circuits, its embedded product and a kit made from the products for measuring the electric properties. CONSTITUTION:An electroconductive needle single crystal comprising (A) a needle single crystal formed by the VLS method and (B) an electroconductive needle single crystal coated with an electroconductive film of 0.1 to 10mum thickness on at least its side surface and having at an aspect ratio of 1 to 500, an embedded product made form the single crystal, and a kit made form the embedded products for measuring the electric properties.

47. 发明专利

JPS57100912A METHOD AND APPARATUS FOR MANUFACTURING SILICON HAVING HIGH PURITY 失效
公开(公告)号：JPS57100912A
公开(公告)日：1982-06-23
申请号：JP16782781
申请日：1981-10-20
申请人： EAROKEMU RESEARCH LAB INC
发明人： ROBAATO KEI GOURUDO , CHIYAARUZU AARU DEITSUKUSON
IPC分类号： C01B33/02 , B01J12/00 , B01J19/26 , C01B33/027 , C01B33/033 , C30B11/12 , C30B29/06

48. 发明专利

JPS5443997B2 失效
公开(公告)号：JPS5443997B2
公开(公告)日：1979-12-22
申请号：JP2408575
申请日：1975-02-28
IPC分类号： C30B11/10 , C30B11/12 , C30B15/00 , C30B15/02 , C30B15/08 , H01L21/208

49. 发明专利

JPS51151299A METHOD OF MAKING SINGLE CRYSTAL GALLIUMNITRIDE 失效
公开(公告)号：JPS51151299A
公开(公告)日：1976-12-25
申请号：JP6721176
申请日：1976-06-10
申请人： PHILIPS NV
发明人： JIYAN FUIRITSUPU ARAI , ROORAN MADAA
IPC分类号： C30B25/02 , C30B11/12 , C30B29/38

50. 发明专利

JPS51151067A MANUFACTURING METHOD OF A MALTI*SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPS51151067A
公开(公告)日：1976-12-25
申请号：JP7537375
申请日：1975-06-20
申请人： FUJITSU LTD
发明人： UEDA RIYUUICHI , SHINOHARA KOUJI
IPC分类号： C22C1/00 , C01B19/04 , C22B7/00 , C22C7/00 , C30B11/12 , C30B23/00 , C30B29/48 , H01L21/208 , H01L21/368
摘要： PURPOSE:To manufacture the malti-semiconductor crystal of Hg, Cd, Te etc. as desired composition ratia.

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