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51. 发明申请

WO2017115461A1 BONDED SUBSTRATE AND METHOD FOR MANUFACTURING BONDED SUBSTRATE 审中-公开
标题翻译：粘合基板和用于制造粘合基板的方法
公开(公告)号：WO2017115461A1
公开(公告)日：2017-07-06
申请号：PCT/JP2016/005212
申请日：2016-12-22
申请人： NGK INSULATORS, LTD.
发明人： TANI, Makoto , AWAKURA, Yasutaka , KAKU, Takeshi , EBIGASE, Takashi
IPC分类号： H01L23/15 , H01L21/48
CPC分类号： H01L23/3735 , B32B15/04 , B32B15/20 , B32B2457/14 , C04B35/645 , C04B37/026 , C04B2237/08 , C04B2237/125 , C04B2237/126 , C04B2237/127 , C04B2237/366 , C04B2237/368 , C04B2237/407 , C04B2237/60 , C04B2237/704 , C04B2237/706 , C04B2237/708 , C04B2237/72 , H01L21/4846 , H01L23/15
摘要： Provided is a bonded substrate mainly for mounting a power semiconductor in which the reliability to a thermal cycle has been enhanced as compared with a conventional one. In a bonded substrate in which a copper plate is bonded to one or both main surface(s) of a nitride ceramic substrate, a bonding layer consisting of TiN intervenes between the nitride ceramic substrate and the copper plate and is adjacent at least to the copper plate, and an Ag distribution region in which Ag atoms are distributed is set to be present in the copper plate. Preferably, an Ag-rich phase is set to be present discretely at an interface between the bonding layer and the copper plate.
摘要翻译：提供了一种键合衬底，主要用于安装功率半导体，与传统的半导体相比，热循环的可靠性得到提高。在将铜板粘合到氮化物陶瓷基板的一个或两个主表面上的粘合基板中，由氮化钛构成的粘合层介于氮化物陶瓷基板和铜板之间，并且至少与铜其中Ag原子分布的Ag分布区设置为存在于铜板中。优选地，富含Ag的相被设定为分散地存在于结合层和铜板之间的界面处。

52. 发明申请

WO2013027638A1 METHOD OF CONTROLLING STORAGE BATTERY, APPARATUS FOR CONTROLLING STORAGE BATTERY, AND ELECTRIC POWER CONTROL SYSTEM 审中-公开
标题翻译：储存电池的控制方法，储存电池的控制装置及电力控制系统
公开(公告)号：WO2013027638A1
公开(公告)日：2013-02-28
申请号：PCT/JP2012/070716
申请日：2012-08-08
申请人： NGK INSULATORS, LTD. , HATTA, Tetsuya , KAI, Akihiro
发明人： HATTA, Tetsuya , KAI, Akihiro
IPC分类号： H01M10/39 , H01M10/44 , H01M10/46 , H02J9/06 , H01M10/50
CPC分类号： H01M10/633 , H01M10/3909 , H01M10/443 , H01M10/46 , H01M10/465 , H01M10/6571 , H01M2220/00 , H02J3/32 , H02J9/062
摘要： A method of controlling a high-temperature storage battery (20) connected to an electric power system (12), an apparatus for controlling the storage battery (20), and an electric power control system reside in that, when the temperature of the storage battery (20) is equal to or lower than a reference temperature, charging and discharging the storage battery (20) with charging and discharging electric power, which is the sum of charging and discharging electric power based on a preset process of operating the storage battery and charging and discharging electric power corresponding to charging and discharging cycles each of a continuous charging time of 1 hour or shorter and a continuous discharging time of 1 hour or shorter, for thereby supplying thermal energy to the storage battery (20).
摘要翻译：一种控制连接到电力系统（12）的高温蓄电池（20）的控制方法，用于控制蓄电池（20）的装置以及电力控制系统，其特征在于，当存储器电池（20）等于或低于参考温度，以蓄电池（20）的充电和放电电力为基础，充电和放电电力是充电和放电电力的总和，其基于预设的操作蓄电池的处理以及对连续充电时间为1小时以下且连续放电时间为1小时以下的充放电循环进行充放电，从而向蓄电池（20）供给热能。

53. 发明申请

WO2010101308A3 POSITIVE ELECTRODE ACTIVE MATERIAL AND LITHIUM SECONDARY BATTERY 审中-公开
标题翻译：正电极活性材料和锂二次电池
公开(公告)号：WO2010101308A3
公开(公告)日：2010-11-11
申请号：PCT/JP2010060933
申请日：2010-06-21
申请人： NGK INSULATORS LTD , YURA YUKINOBU , KOBAYASHI NOBUYUKI , NANATAKI TSUTOMU , KAIGAWA KAZUYUKI
发明人： YURA YUKINOBU , KOBAYASHI NOBUYUKI , NANATAKI TSUTOMU , KAIGAWA KAZUYUKI
IPC分类号： C01G45/00 , H01M4/505
CPC分类号： H01M4/505 , H01M2004/021
摘要： Disclosed is a positive electrode active material including a plurality of crystalline particles comprising lithium manganate with a spinel structure including lithium and manganese as constituent elements, and of which at least 70% are primary particles with a diameter of 5 - 20 µm and a non-octahedral shape.
摘要翻译：本发明公开了一种正极活性物质，其含有多个结晶性粒子，该结晶性粒子含有以锂和锰为构成元素的尖晶石结构的锰酸锂，其中，至少70％为直径5〜20μm的一次粒子，八面体形状。

54. 发明申请

WO2010101307A3 POSITIVE ELECTRODE ACTIVE MATERIAL AND LITHIUM SECONDARY BATTERY USING SAME 审中-公开
标题翻译：使用正极电极活性材料和锂二次电池
公开(公告)号：WO2010101307A3
公开(公告)日：2010-11-11
申请号：PCT/JP2010060930
申请日：2010-06-21
申请人： NGK INSULATORS LTD , YURA YUKINOBU , KOBAYASHI NOBUYUKI , NANATAKI TSUTOMU , KAIGAWA KAZUYUKI
发明人： YURA YUKINOBU , KOBAYASHI NOBUYUKI , NANATAKI TSUTOMU , KAIGAWA KAZUYUKI
IPC分类号： C01G45/00 , H01M4/505
CPC分类号： H01M4/505 , H01M2004/021
摘要： Disclosed is a positive electrode active material including a plurality of crystal particles comprising lithium manganate with a spinel structure. At least 70% of all the crystal particles by area are primary particles, which are those with a particle diameter of 3 - 20 µm. The primary particles each have a component that includes a rectangular face, where the portion of the total surface area of each primary particle represented by a rectangular face is 0.5 - 5%.
摘要翻译：公开了一种正极活性物质，其包含多个具有尖晶石结构的锰酸锂的结晶粒子。所有晶粒中至少70％的面积是一次粒子，它们是粒径为3〜20μm的粒子。一次颗粒各自具有包括矩形面的部件，其中由矩形面表示的每个一次粒子的总表面积的部分为0.5-5％。

55. 发明申请

WO2008050814A1 METHOD OF MANUFACTURING CERAMIC POROUS MEMBRANE AND METHOD OF MANUFACTURING CERAMIC FILTER 审中-公开
标题翻译：陶瓷多孔膜的制造方法和制造陶瓷过滤器的方法
公开(公告)号：WO2008050814A1
公开(公告)日：2008-05-02
申请号：PCT/JP2007/070763
申请日：2007-10-18
申请人： NGK INSULATORS, LTD. , ISOMURA, Manabu , HISHIKI, Tatsuya , WADA, Ichiro
发明人： ISOMURA, Manabu , HISHIKI, Tatsuya , WADA, Ichiro
IPC分类号： B01D71/02 , C04B41/87
CPC分类号： B01D67/0048 , B01D63/066 , B01D2323/42
摘要： There are disclosed a method of manufacturing a thin and uniform ceramic porous membrane formed with less membrane formation times and having less defects, and a method of manufacturing a ceramic filter including the ceramic porous membrane. A UF membrane (14) having an average pore diameter smaller than that of a porous base member (11) is formed on the porous base member (11), a ceramic sol (40) is deposited on the UF membrane (14), and the ceramic sol (40) is dried with blown air and then fired to form a ceramic porous membrane (1) having an average pore diameter smaller than that of the UF membrane (14).
摘要翻译：公开了一种制造具有较少的膜形成时间并且具有较少缺陷的薄均匀陶瓷多孔膜的方法，以及制造包括陶瓷多孔膜的陶瓷过滤器的方法。在多孔基材（11）上形成平均孔径小于多孔基材（11）的UF膜（14），在UF膜（14）上淀积陶瓷溶胶（40），陶瓷溶胶（40）用吹扫空气干燥，然后烧制，形成平均孔径小于UF膜（14）的陶瓷多孔膜（1）。

56. 发明申请

WO2007117034A1 PRODUCTION METHODS OF SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：半导体晶体和半导体衬底的生产方法
公开(公告)号：WO2007117034A1
公开(公告)日：2007-10-18
申请号：PCT/JP2007/058025
申请日：2007-04-05
申请人： TOYODA GOSEI CO., LTD. , NGK INSULATORS, LTD. , OSAKA UNIVERSITY , SHIBATA, Naoki , HIRATA, Koji , YAMAZAKI, Shiro , IMAI, Katsuhiro , IWAI, Makoto , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
发明人： SHIBATA, Naoki , HIRATA, Koji , YAMAZAKI, Shiro , IMAI, Katsuhiro , IWAI, Makoto , SASAKI, Takatomo , MORI, Yusuke , KAWAMURA, Fumio
IPC分类号： C30B29/38 , C30B9/00 , H01L33/00
CPC分类号： C30B29/403 , C30B9/00 , H01L33/0075 , Y10T428/265 , Y10T428/266
摘要： To provide a semiconductor substrate of high quality suitable for fabricating an electronic device or an optical device. The present invention provides a method for producing a semiconductor substrate for an electronic device or an optical device, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal or after completion of growth of the semiconductor crystal.
摘要翻译：提供适合于制造电子器件或光学器件的高品质的半导体衬底。本发明提供了一种用于制造电子器件或光学器件的半导体衬底的方法，所述方法包括使氮（N）与镓（Ga），铝（Al）或铟（In）反应，其为III族元素在含有选自碱金属和碱土金属中的多种金属元素的助熔剂混合物中，从而生长III族氮化物类化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 III族氮化物基化合物半导体晶体，在半导体晶体生长过程中或半导体晶体生长完成之后。

57. 发明申请

WO1997037195A1 OSCILLATION GYRO SENSOR, COMPOSITE SENSOR AND PROCESS OF PRODUCING GYRO SENSOR 审中-公开
标题翻译：振动陀螺传感器，复合传感器及生产陀螺传感器的过程
公开(公告)号：WO1997037195A1
公开(公告)日：1997-10-09
申请号：PCT/JP1997001094
申请日：1997-03-28
申请人： NGK INSULATORS, LTD. , TAKEUCHI, Yukihisa , NAMERIKAWA, Masahiko , SHIBATA, Kazuyoshi , OHNISHI, Takao
发明人： NGK INSULATORS, LTD.
IPC分类号： G01C19/56
CPC分类号： G01P15/097 , G01C19/5628 , G01P15/0922 , G01P2015/0817 , Y10T29/42
摘要： A detection unit equipped with a piezoelectric/electrostriction device (12) for detecting displacement perpendicular to the oscillation direction of an oscillator (2) when the oscillator rotates is constructed of a sintered body of ceramic together with the oscillator (2) and a support (4). The detection unit is constituted by a first sheet-like portion (6) which is thinner than the oscillator (2) and whose major surface extends in the oscillation direction. The piezoelectric/electrostriction device (12) is integrally formed on the first sheet-like portion (6) by a film formation method. Further, a thin second sheet-like portion (8) for lowering the rigidity of the oscillation element (2) in the oscillation direction and allowing the oscillation element (2) to easily oscillate is integrally disposed so that the major surface thereof extends perpendicularly to the oscillation direction. A ceramic oscillation gyro sensor the characteristics of which are hardly affected by the surrounding magnetic field, the manufacture of which is easy, and which has a high sensitivity is provided.
摘要翻译：配备有用于检测当振荡器旋转时垂直于振荡器（2）的振荡方向的位移的压电/电致伸缩装置（12）的检测单元与振荡器（2）和支撑件（2）一起由陶瓷烧结体构成 4）。检测单元由比振荡器（2）薄的主要表面在振荡方向上延伸的第一片状部分（6）构成。压电/电致伸缩装置（12）通过成膜方法一体形成在第一片状部分（6）上。此外，用于降低振动元件（2）在振荡方向上的刚性并使振动元件（2）容易振荡的薄的第二片状部分（8）被一体地设置成使得其主表面垂直延伸振荡方向。一种陶瓷振荡陀螺传感器，其特性几乎不受周围磁场的影响，其制造容易，并且具有高灵敏度。

58. 发明申请

WO1997003836A1 PIEZOELECTRIC/ELECTROSTRICTIVE FILM TYPE CHIP 审中-公开
标题翻译：压电/静电膜型芯片
公开(公告)号：WO1997003836A1
公开(公告)日：1997-02-06
申请号：PCT/JP1996002054
申请日：1996-07-23
申请人： SEIKO EPSON CORPORATION , NGK INSULATORS, LTD. , USUI, Minoru , KATAKURA, Takahiro , AKAHANE, Fujio , KAMOI, Kazumi , SHINADA, Satoshi , TAKEUCHI, Yukihisa , TAKAHASHI, Nobuo
发明人： SEIKO EPSON CORPORATION , NGK INSULATORS, LTD.
IPC分类号： B41J02/045
CPC分类号： B41J2/1637 , B41J2/14233 , B41J2/161 , B41J2/1632 , B41J2/1642 , B41J2/1646 , B41J2002/14306 , B41J2002/14387 , B41J2002/14491
摘要： A piezoelectric/electrostrictive film type chip (50) comprises a spacer plate (74) having a window arrangement pattern (100) composed of at least a plurality of windows (75), a ceramic substrate (70) integrated with a thin closure plate (72) covering the windows (75), and a piezoelectric/electrostrictive actuating section (71) composed of a lower electrode (81), a piezoelectric/electrostrictive layer (82) and an upper electrode (83) which are successively formed in multilayer by a film-forming method in the area covering the windows (75) on the outer surface of the closure plate (72). A positioning pin hole (52) is provided at or near the center of gravity of the window arrangement pattern (100). The lowering of the accuracy of the alignment of the pin pressure with the communication hole of the piezoelectric/electrostrictive actuator is suppressed to a minimum, and therefore the chip is joined to the ink-nozzle member with good positional accuracy.
摘要翻译：压电/电致伸缩膜型芯片（50）包括具有由至少多个窗口（75）构成的窗口布置图案（100）的隔离板（74），与薄封闭板（覆盖窗口（75）的压电/电致伸缩致动部（71），以及由下电极（81），压电/电致伸缩层（82）和上电极（83）组成的压电/电致伸缩致动部分在覆盖封盖板（72）的外表面上的窗（75）的区域中的成膜方法。在窗口布置图案（100）的重心处或其附近设置定位销孔（52）。压电/电致伸缩致动器的连通孔的销压力的对准精度的降低被抑制到最小限度，因此芯片以良好的位置精度与油墨喷嘴构件接合。

59. 发明申请

WO1996021940A1 HIGH PRESSURE DISCHARGE LAMP AND PRODUCTION METHOD THEREOF 审中-公开
标题翻译：高压放电灯及其生产方法
公开(公告)号：WO1996021940A1
公开(公告)日：1996-07-18
申请号：PCT/IB1996000027
申请日：1996-01-12
申请人： NGK INSULATORS, LTD. , SUZUKI, Go , NIIMI, Norikazu , KONDO, Tsutomu
发明人： NGK INSULATORS, LTD.
IPC分类号： H01J61/36
CPC分类号： H01J61/366 , H01J9/266 , H01J9/323 , H01J61/34 , H01J61/363 , H01J61/82
摘要： A high pressure discharge lamp includes a ceramic discharge tube (11) having an ionization light-emitting substance and a starting gas filled in the internal space (13) thereof, a closing member (50A) equipped with a through-hole (14a, 15a), at least a part of which is fixed to the inside of end portion (12) of the ceramic discharge lamp (11), a current conductor (5) equipped with an electrode system (9) and inserted into the through-hole (14a, 15a) of the closing member (50A), and a sealing material layer (16A) so formed as to be bonded to the closing member (50A) at portions other than the through-hole (14a, 15a) and to the current conductor (5). Preferably, the sealing material layer (16A) comprises a metallized layer.
摘要翻译：高压放电灯包括：陶瓷放电管（11），其具有电离发光物质和填充在其内部空间（13）中的起始气体;封闭构件（50A），其具有通孔（14a，15a）），其至少一部分固定在陶瓷放电灯（11）的端部（12）的内部，具有电极系统（9）的电流导体（5）并插入到通孔（以及密封材料层（16A），其形成为在通孔（14a，15a）以外的部分与封闭件（50A）接合，并且与电流导体（5）。优选地，密封材料层（16A）包括金属化层。

60. 发明申请

WO1995021139A1 ALUMINUM NITRIDE SINTER AND PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：氮化铝烧结炉及其生产方法
公开(公告)号：WO1995021139A1
公开(公告)日：1995-08-10
申请号：PCT/JP1995000141
申请日：1995-02-03
申请人： NGK INSULATORS, LTD. , SAKON, Atsushi , USHIKOSHI, Ryusuke , UMEMOTO, Koichi , KOBAYASHI, Hiromichi
发明人： NGK INSULATORS, LTD.
IPC分类号： C04B35/581
CPC分类号： C04B35/581
摘要： An aluminum nitride sinter in which the content of each of its constituent metal elements other than aluminum is not greater than 100 ppm and which is black with lightness of not higher than N4 stipulated in JIS Z 8721. Preferably, a relative density of the sinter is at least 99.3 % and a mean particle size of crystal particles constituting the sinter is from 0.6 to 4.0 mu m. Aluminum nitride powder obtained by reductive nitriding is sintered at a temperature of not lower than 1,800 DEG C and a pressure of at least 120 kg/cm . This temperature is preferably not higher than 2,000 DEG C, and sintering is preferably carried out for at least 2 hours but not longer than 5 hours.
摘要翻译：氮化铝烧结体，其中除铝以外的其各组成金属元素的含量不大于100ppm，并且黑色，其亮度不高于JIS Z 8721规定的N4。优选地，烧结体的相对密度为至少99.3％，构成烧结体的结晶粒子的平均粒径为0.6〜4.0μm。通过还原氮化获得的氮化铝粉末在不低于1800℃的温度和至少120kg / cm 2的压力下烧结。该温度优选为2000℃以下，烧结优选为2小时以上5小时以下。

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