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    • 51. 发明授权
    • Oscillator circuit which compensates for external voltage supply, temperature and process
    • 振荡电路,补偿外部电源,温度和工艺
    • US08710939B2
    • 2014-04-29
    • US13501659
    • 2010-11-05
    • Sang Hun Kim
    • Sang Hun Kim
    • H03L1/00
    • H03K3/011H03K4/501H03L1/00
    • Disclosed is an oscillator circuit which compensates for external voltage supply, temperature, and a process, includes: a reference voltage generation unit configured to generate reference voltage Vbp stabilized against a change in external voltage supply VDD and temperature; a temperature compensation unit configured to generate first reference voltage PVREF, second reference voltage IVREF, and third reference voltage RX_VREF; an internal voltage supply generation unit configured to generate internal voltage supply VPPI stabilized against the change in external voltage supply VDD and temperature by receiving the first reference voltage PVREF; a current supply unit configured to generate compensation current RX_IREF in proportion to or in inverse proportion to temperature by receiving the second reference voltage IVREF; a process compensation unit configured to perform process compensation by controlling an amount of the compensation current RX_IREF; and an oscillation signal generation unit configured to generate oscillation signals.
    • 公开了补偿外部电压源,温度和工艺的振荡器电路,包括:参考电压产生单元,被配置为产生稳定的外部电压源VDD和温度变化的参考电压Vbp; 温度补偿单元,被配置为产生第一参考电压PVREF,第二参考电压IVREF和第三参考电压RX_VREF; 内部电压产生单元,被配置为产生通过接收第一参考电压PVREF而抵抗外部电压源VDD和温度的变化而稳定的内部电压供应VPPI; 电流供给单元,被配置为通过接收第二参考电压IVREF而与温度成比例地或与温度成反比地产生补偿电流RX_IREF; 处理补偿单元,被配置为通过控制补偿电流RX_IREF的量来执行处理补偿; 以及振荡信号生成单元,被配置为产生振荡信号。
    • 53. 发明申请
    • OSCILLATOR CIRCUIT WHICH COMPENSATES FOR EXTERNAL VOLTAGE SUPPLY, TEMPERATURE AND PROCESS
    • 补偿外部电压,温度和过程的振荡器电路
    • US20120229221A1
    • 2012-09-13
    • US13501659
    • 2010-11-05
    • Sang Hun Kim
    • Sang Hun Kim
    • H03K3/011
    • H03K3/011H03K4/501H03L1/00
    • Disclosed is an oscillator circuit which compensates for external voltage supply, temperature, and a process, includes: a reference voltage generation unit configured to generate reference voltage Vbp stabilized against a change in external voltage supply VDD and temperature; a temperature compensation unit configured to generate first reference voltage PVREF, second reference voltage IVREF, and third reference voltage RX_VREF; an internal voltage supply generation unit configured to generate internal voltage supply VPPI stabilized against the change in external voltage supply VDD and temperature by receiving the first reference voltage PVREF; a current supply unit configured to generate compensation current RX_IREF in proportion to or in inverse proportion to temperature by receiving the second reference voltage IVREF; a process compensation unit configured to perform process compensation by controlling an amount of the compensation current RX_IREF; and an oscillation signal generation unit configured to generate oscillation signals.
    • 公开了补偿外部电压源,温度和工艺的振荡器电路,包括:参考电压产生单元,被配置为产生稳定的外部电压源VDD和温度变化的参考电压Vbp; 温度补偿单元,被配置为产生第一参考电压PVREF,第二参考电压IVREF和第三参考电压RX_VREF; 内部电压产生单元,被配置为产生通过接收第一参考电压PVREF而抵抗外部电压源VDD和温度的变化而稳定的内部电压供应VPPI; 电流供给单元,被配置为通过接收第二参考电压IVREF而与温度成比例地或与温度成反比地产生补偿电流RX_IREF; 处理补偿单元,被配置为通过控制补偿电流RX_IREF的量来执行处理补偿; 以及振荡信号生成单元,被配置为产生振荡信号。
    • 59. 发明授权
    • Germanium semiconductor device and method of manufacturing the same
    • 锗半导体器件及其制造方法
    • US07550796B2
    • 2009-06-23
    • US11947123
    • 2007-11-29
    • Sang Hun KimHyun Cheol BaeSang Heung Lee
    • Sang Hun KimHyun Cheol BaeSang Heung Lee
    • H01L29/78H01L21/336
    • H01L29/66613H01L21/223H01L21/28079H01L29/165H01L29/41783H01L29/517H01L29/665H01L29/66545H01L29/66606H01L29/66742H01L29/78H01L29/78684
    • A germanium semiconductor device and a method of manufacturing the same are provided. The method includes the steps of: forming an isolation layer on a substrate using a shallow trench; forming a silicon-nitride layer on the substrate, and selectively etching the silicon nitride layer to expose source and drain regions; injecting impurities onto a surface of the substrate over the exposed source and drain regions using delta-doping to form a delta-doping layer; selectively growing a silicon germanium layer containing impurities on the delta-doping layer; rapidly annealing the substrate and forming source and drain regions by diffusion of the impurities; depositing an insulating layer on the entire surface of the substrate; etching the insulating layer and forming source and drain contact parts to be in contact with source and drain terminals; depositing metal over the insulating layer having the source and drain contact parts thereon and forming a metal silicide layer; and after forming the silicide layer, forming the source and drain terminals to be in contact with the silicide layer. Accordingly, the source and drain regions having a shallow junction depth may be ensured by forming the source and drain regions through annealing after delta-doping and selectively growing the silicon germanium layer containing high-concentration impurities. Also, the germanium silicide layer is stably formed by the silicon germanium layer grown in the source and drain regions, and thus contact resistance is lowered and driving current of the device is improved.
    • 提供锗半导体器件及其制造方法。 该方法包括以下步骤:使用浅沟槽在衬底上形成隔离层; 在衬底上形成氮化硅层,并选择性地蚀刻氮化硅层以暴露出源区和漏区; 使用增量掺杂在暴露的源极和漏极区域上在衬底的表面上注入杂质以形成δ-掺杂层; 在δ-掺杂层上选择性地生长含有杂质的硅锗层; 快速退火衬底并通过杂质扩散形成源区和漏区; 在基板的整个表面上沉积绝缘层; 蚀刻绝缘层并形成源极和漏极接触部分以与源极和漏极端子接触; 在其上具有源极和漏极接触部分的绝缘层上沉积金属并形成金属硅化物层; 并且在形成硅化物层之后,形成与硅化物层接触的源极和漏极端子。 因此,具有浅结深度的源极和漏极区域可以通过在增量掺杂之后退火形成源区和漏极区域并选择性地生长含有高浓度杂质的硅锗层来确保。 此外,通过在源极区和漏极区中生长的硅锗层稳定地形成硅化锗层,因此接触电阻降低,器件的驱动电流提高。
    • 60. 发明申请
    • Driving IC for display apparatus, display apparatus and setting data programming method thereof
    • 显示装置用驱动IC,显示装置及其设定数据编程方法
    • US20090073147A1
    • 2009-03-19
    • US12156530
    • 2008-06-02
    • Jong-kon BaeSang-hun Kim
    • Jong-kon BaeSang-hun Kim
    • G06F3/038
    • G09G3/2092G09G2320/0693G09G2320/08
    • A driving integrated circuit (IC) in which operations of registers and a method of programming setting data are improved, a display apparatus including the same, and the method of programming setting data of the display apparatus are provided. The display apparatus includes a panel displaying images, a driving IC disposed to drive the display apparatus and including a register block temporarily storing externally provided data, and a non-volatile memory storing setting data setting up operating conditions of the display apparatus. The register block includes one or more registers disposed in series, stores the data during a first interval of acquiring the setting data, and shifts and outputs data stored in the registers during a second interval for programming the acquired setting data to the non-volatile memory.
    • 提供了一种驱动集成电路(IC),其中改进了寄存器的操作和编程设置数据的方法,包括该驱动集成电路的显示装置以及显示装置的设置数据的编程方法。 显示装置包括显示图像的面板,设置用于驱动显示装置并包括临时存储外部提供的数据的寄存器块的驱动IC和存储设置显示装置的操作条件的设置数据的非易失性存储器。 寄存器块包括串联布置的一个或多个寄存器,在获取设置数据的第一间隔期间存储数据,并且在第二间隔期间移位和输出存储在寄存器中的数据,以将所获取的设置数据编程到非易失性存储器 。