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    • 51. 发明授权
    • System and method for measuring readback signal amplitude asymmetry in a perpendicular magnetic recording disk drive
    • 用于测量垂直磁记录磁盘驱动器中回读信号幅度不对称的系统和方法
    • US07411754B2
    • 2008-08-12
    • US11463307
    • 2006-08-08
    • Mike X. WangJing Zhang
    • Mike X. WangJing Zhang
    • G11B5/09
    • G11B19/048G11B5/455G11B5/4555
    • A method for operating a tester for testing heads and disks of a magnetic recording disk drive during manufacturing calculates the readback signal amplitude asymmetry in the frequency domain without the need for measurement in the time domain with a peak detection channel. The tester first signals the write head to write a first pattern on the disk to generate a readback signal with positive pulses. The read head then detects this first recorded pattern and sends the readback signal to a spectrum analyzer connected to the tester. The tester then signals the write head to write a second pattern on the disk to generate a readback signal with negative pulses. The read head then detects this second recorded pattern and sends the readback signal to the spectrum analyzer. The spectrum analyzer measures the amplitudes of the first and second readback signals in the frequency domain using a bandpass filter. A controller in the tester calculates readback signal amplitude asymmetry from the measured amplitudes of the first and second readback signals.
    • 用于在制造期间操作用于测试磁记录盘驱动器的磁头和磁盘的测试器的方法计算频域中的回读信号幅度不对称性,而不需要使用峰值检测通道在时域中进行测量。 测试仪首先发信号通知写入头,将第一个模式写在磁盘上,以产生具有正脉冲的回读信号。 读头然后检测该第一记录图案,并将回读信号发送到连接到测试仪的频谱分析仪。 然后,测试仪发信号通知写入头,将第二个模式写入磁盘,以产生具有负脉冲的回读信号。 然后,读取头检测该第二记录图案,并将回读信号发送到频谱分析仪。 频谱分析仪使用带通滤波器测量频域中的第一和第二回读信号的振幅。 测试仪中的控制器根据第一和第二回读信号的测量幅度计算回读信号幅度不对称。
    • 55. 发明授权
    • Method for forming a hard bias structure in a magnetoresistive sensor
    • 在磁阻传感器中形成硬偏压结构的方法
    • US07284316B1
    • 2007-10-23
    • US10991712
    • 2004-11-17
    • Yiming HuaiJinqiu ZhangJing Zhang
    • Yiming HuaiJinqiu ZhangJing Zhang
    • G11B5/127H04R31/00
    • G11B5/3932B82Y10/00B82Y25/00G11B5/3163G11B2005/3996Y10T29/49034Y10T29/49043Y10T29/49046Y10T29/49048Y10T29/49052
    • A method for forming a hard bias structure in a magnetoresistive sensor is disclosed. A magnetoresistive sensor having a soft magnetic bias layer, spacer layer, and a magnetoresistive layer, is formed over a substrate having a gap layer. A mask is formed over a portion of the magnetoresistive sensor structure to define a central region. The masked structure is ion milled to remove portions not shielded by the mask, to form the central region with sloped sides, and to expose a region of the gap layer laterally adjacent the sloped sides. A first underlayer is deposited onto at least the sloped sides at a high deposition angle. A second underlayer is deposited to at least partially overlap the first underlayer, and at a first lower deposition angle. A hard bias layer is deposited over at least a portion of the second underlayer, and at a second lower deposition angle.
    • 公开了一种在磁阻传感器中形成硬偏压结构的方法。 在具有间隙层的衬底上形成具有软磁偏置层,间隔层和磁阻层的磁阻传感器。 在磁阻传感器结构的一部分上形成掩模以限定中心区域。 被掩蔽的结构被离子研磨以去除未被掩模屏蔽的部分,以形成具有倾斜侧面的中心区域,并且使间隙层的区域横向暴露在倾斜侧面附近。 第一底层以高沉积角度沉积在至少倾斜的侧面上。 沉积第二底层至少部分地与第一底层重叠,并且以第一较低沉积角度沉积。 硬偏压层沉积在第二底层的至少一部分上,并且沉积在第二较低沉积角度。
    • 60. 发明授权
    • Magnetoresistive sensor with overlapping lead layers including alpha tantalum and conductive layers
    • 具有重叠引线层的磁阻传感器,包括α钽和导电层
    • US06934129B1
    • 2005-08-23
    • US10260896
    • 2002-09-30
    • Jinqiu ZhangJing ZhangYiming HuaiLifan Chen
    • Jinqiu ZhangJing ZhangYiming HuaiLifan Chen
    • G11B5/39
    • G11B5/3932
    • Magnetoresistive (MR) sensors are disclosed that have leads that overlap a MR structure and distribute current to and from the MR structure so that the current is not concentrated in small portions of the leads, alleviating the problems mentioned above. For example, the leads can be formed of a body-centered cubic (bcc) form of tantalum, combined with gold or other highly conductive materials. For the situation in which a thicker bcc tantalum layer covers a highly conductive gold layer, the tantalum layer protects the gold layer during MR structure etching, so that the leads can have broad layers of electrically conductive material for connection to MR structures. The broad leads also conduct heat better than the read gap material that they replace, further reducing the temperature at the connection between the leads and the MR structure.
    • 公开了磁阻(MR)传感器,其具有与MR结构重叠的引线并且将电流分配到MR结构和从MR结构分配电流,使得电流不集中在引线的小部分中,减轻了上述问题。 例如,引线可以由体心立方(bcc)形式的钽形成,与金或其它高导​​电材料组合。 对于较厚的bcc钽层覆盖高导电金层的情况,钽层在MR结构蚀刻期间保护金层,使得引线可以具有用于连接到MR结构的宽层导电材料。 宽引线还比它们所替代的读取间隙材料更好地传导热量,进一步降低引线与MR结构之间的连接处的温度。