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    • 56. 发明授权
    • Method for producing In2O3—SnO2 precursor sol
    • 生产In2O3-SnO2前体溶胶的方法
    • US06235260B1
    • 2001-05-22
    • US09230252
    • 1999-03-22
    • Motoyuki TokiToshimi FukuiNaoko AsakumaTakamitsu Fujii
    • Motoyuki TokiToshimi FukuiNaoko AsakumaTakamitsu Fujii
    • B01F308
    • C01G19/00C03C17/253C03C2217/231C03C2218/113C04B41/505C04B2111/805C04B2111/94C04B41/0036C04B41/0045C04B41/4537C04B41/4554C04B41/5072
    • The invention relates to a method for forming a transparent conductive thin film of In2O3—SnO2 on a surface of a plastics substrate of less heat resistance other than that of glass, ceramics, etc. When an In2O3—SnO2 precursor sol is produced by hydrolyzing and polymerizing a solution containing indium alkoxide and tin alkoxide, either tri-s-butoxyindium or tri-t-butoxyindium is used as the indium alkoxide. Water is added to the solution containing indium alkoxide and tin alkoxide at a temperature of not higher than −20° C. The obtained In2O3—SnO2 precursor sol is applied to a surface of a substrate to form a gel film, then the gel film is either irradiated with an ultraviolet beam of which wave length is not longer than 360 nm, or irradiated with an ultraviolet beam of which wave length is not longer than 260 nm and further irradiated with a laser beam of which wave length is not longer than 360 nm, to crystallize the gel forming the thin film, whereby an In2O3—SnO2 thin film having a conductivity is formed on the surface of the substrate.
    • 本发明涉及在除了玻璃,陶瓷等以外的耐热性低的塑料基板的表面上形成In2O3-SnO2的透明导电性薄膜的方法。当In2O3-SnO2前体溶胶通过水解和 使用含有烷氧化铟和锡醇盐的溶液,即三正丁氧基铟或三叔丁氧基铟作为铟醇盐。 在不高于-20℃的温度下,向含有烷氧基烷氧化物和锡醇盐的溶液中加入水。将得到的In2O3-SnO2前体溶胶施加到基材的表面,形成凝胶膜,然后将凝胶膜 用波长不大于360nm的紫外线照射或用波长不大于260nm的紫外线照射,并进一步用波长不大于360nm的激光束照射 使形成薄膜的凝胶结晶,由此在基板的表面上形成具有导电性的In2O3-SnO2薄膜。