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51. 发明专利

FI20010261A 未知
公开(公告)号：FI20010261A
公开(公告)日：2001-08-18
申请号：FI20010261
申请日：2001-02-12
申请人： CRYSTAL GROWING SYSTEMS GMBH
发明人： ALTERKRUEGER BURKHARD , SCHOLLER JOHANN
IPC分类号： C30B15/06 , C30B15/30 , G01G19/14 , C30B

52. 发明专利

AU1827097A Fiber drawing from undercooled molten materials 未知
公开(公告)号：AU1827097A
公开(公告)日：1997-08-01
申请号：AU1827097
申请日：1997-01-09
申请人： CONTAINERLESS RESEARCH INC
发明人： NORDINE PAUL C , WEBER J K RICHARD , FELTEN JOHN J
IPC分类号： C03B37/02 , C03C13/00 , C03B37/012 , C30B9/04 , C30B15/02 , C30B15/06
摘要： The present invention provides a method for drawing fibers from materials which exhibit low viscosities at the equilibrium melting temperature. Further, the present invention provides novel drawn fibers from materials which were thought to be incompatible with a fiber-drawing process. The present invention also provides a means of minimizing recrystallization of molten materials during fiber drawing. Still further, the present invention provides novel drawn fibers with a greater tensile strength and greater concentrations of additives as compared to prior art fibers. Lastly, the present invention provides a means for producing crystalline fibers with controlled chemical compositions, and fibers with high tensile strengths as compared to prior art fibers of the same composition. The present invention achieves these objectives by heating the desired materials until a liquid melt is formed, undercooling the melt until the proper viscosity is reached, initiating fiber drawing by inserting a "stinger" into the molten material, then finally drawing the fibers at the desired speed so that fibers of the desired composition and diameter are formed. If desired, crystalline fibers can be formed by heating the drawn fibers until crystallization occurs. The present invention also provides for drawing fibers from a melt under either containerless conditions or within a container.

53. 发明专利

DE3767932D1 未知
公开(公告)号：DE3767932D1
公开(公告)日：1991-03-14
申请号：DE3767932
申请日：1987-06-01
申请人： SIEMENS AG
发明人： FALCKENBERG RICHARD , HOYLER GERHARD , GRABMAIER JOSEF
IPC分类号： H01L21/301 , C30B15/00 , C30B15/06 , C30B29/06 , C30B29/64 , C30B33/00 , H01L31/04 , H01L31/09

54. 发明专利

DE3306515C2 未知
公开(公告)号：DE3306515C2
公开(公告)日：1989-11-02
申请号：DE3306515
申请日：1983-02-24
申请人： SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE
发明人： FALCKENBERG, RICHARD, DR.RER.NAT., 8025 UNTERHACHING, DE , GRABMAIER, JOSEF, DR.RER.NAT., 8137 BERG, DE
IPC分类号： C30B15/06 , C30B11/00 , C30B29/06

55. 发明专利

DE3803769A1 Method for producing thin, strip-shaped silicon crystals having a planar surface, suitable for fabrication of solar cells 未知
公开(公告)号：DE3803769A1
公开(公告)日：1989-08-17
申请号：DE3803769
申请日：1988-02-08
申请人： SIEMENS AG
发明人： HOYLER GERHARD DIPL PHYS , FALCKENBERG RICHARD DR RER NAT , GRABMAIER JOSEF DR RER NAT
IPC分类号： C30B15/06 , C30B15/00 , C30B15/34 , C30B29/06
摘要： Planar silicon strips (3) having a smooth surface are obtained - in a process in which the substrate body (1) employed is a graphite net which is passed tangentially across a silicon melt (2) held in a trough (6) and is thus coated with silicon - by there being arranged, downstream of the growth section (W) proper, a melting section (A). The latter consists of a cover (5) above the melt surface (2) whose temperature T1 is set in such a way that it is greater than or equal to the mean temperature T2 on the net-side surface of the substrate body (3) coated with silicon. The process is used in the production of silicon strips for solar cells, the substrate bodies used being carbon fibre nets (1) having internal mesh sizes of greater than 1.5 mm.

56. 发明专利

DK295687D0 未知
公开(公告)号：DK295687D0
公开(公告)日：1987-06-10
申请号：DK295687
申请日：1987-06-10
申请人： KUEHNLE MANFRED R
发明人： KUEHNLE MANFRED R
IPC分类号： C30B15/06 , C30B15/00 , C30B29/20 , C30B29/60 , C30B29/64 , C30B33/00

57. 发明专利

DE3524997A1 Process for manufacturing strip-shaped silicon crystals with a horizontal pulling direction 未知
公开(公告)号：DE3524997A1
公开(公告)日：1987-01-15
申请号：DE3524997
申请日：1985-07-12
申请人： SIEMENS AG
发明人： RAUSCHER GERHARD , GRABMAIER JOSEF DR RER NAT , FALCKENBERG RICHARD DR RER NAT , HOYLER GERHARD
IPC分类号： C30B15/00 , C30B15/06 , C30B15/22 , C01B33/02 , C30B15/14 , C30B15/20 , C30B29/06 , H01F7/06 , H01L31/18
摘要： In a process for horizontal silicon ribbon pulling, in which the supporting body at the same time is the crystallisation nucleus for the build-up of the crystalline silicon strip, that end of the melt (4) which, in the pulling direction (6) is situated near the melting trough rim (5), is exposed to the action of a travelling magnetic field (1, 2, 3), so that as a result of the interaction between induced currents and travelling field a pressure acting in a non-contact manner is exerted on the melt meniscus (8) counter to the pulling direction (6) and thus stabilises the meniscus. This avoids the melt (4) being pulled along across the trough rim (5) by the crystallising layer (7). The process is used in the manufacture of silicon crystals for solar cells.

58. 发明专利

DE3520067A1 Method for producing strip-shaped silicon crystals employing a horizontal pulling direction 未知
公开(公告)号：DE3520067A1
公开(公告)日：1986-12-04
申请号：DE3520067
申请日：1985-06-04
申请人： SIEMENS AG
发明人： FALCKENBERG RICHARD DR RER NAT , HOYLER GERHARD DIPL PHYS , GRABMAIER JOSEF DR RER NAT
IPC分类号： C30B29/06 , C30B15/00 , C30B15/06 , C30B15/22 , H01L21/208
摘要： In a method for the horizontal pulling of silicon strips, in which the support body is at the same time the crystallisation nucleus for the structure of the crystalline silicon strip, that end of the melt (4) which, in the pulling direction (6), is situated in the region of the melting trough rim (5), is subjected to the influence of a divergent electromagnetic field (1, 2, 12, 22, 32, 42), so that a pressure acting in a non-contact manner stabilises the melt meniscus (14). This avoids the melt (4) being dragged across the trough rim (5) by the crystallising layer (3). The method is used in the production of silicon crystals for solar cells.

59. 发明专利

DE3010557C2 未知
公开(公告)号：DE3010557C2
公开(公告)日：1986-08-21
申请号：DE3010557
申请日：1980-03-19
申请人： SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE
发明人： GRABMAIER, JOSEF, DIPL.-PHYS. DR.RER.NAT., 8131 BERG, DE
IPC分类号： H01L31/04 , C30B11/14 , C30B15/00 , H01L21/208 , H01L31/18 , C30B11/02 , C30B15/06 , C30B15/10

60. 发明专利

ZA853873B PROCESS AND APPARATUS FOR PRODUCING SEMI-CONDUCTOR FOILS 未知
公开(公告)号：ZA853873B
公开(公告)日：1986-01-29
申请号：ZA853873
申请日：1985-05-22
申请人： BAYER AG
发明人： SCWIRTLICH INGO , WODITSCH PETER
IPC分类号： H01L31/04 , C01B33/02 , C30B15/00 , C30B15/06 , C30B29/64 , H01L21/208 , C30B
摘要： In the production of a semi-conductor foil by solidification of a liquid semi-conductor on a horizontal support, the improvement which comprises positioning a molding body on the horizontal support, supplying the liquid semi-conductor to the molding body, and effecting relative movement between the molding body and support in a direction parallel to the support. Thereby fault-free silicon foils can readily be produced.

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