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61. 发明申请

WO2022167231A1 METAL SUBSTRATE STRUCTURE AND METHOD OF MANUFACTURING A METAL SUBSTRATE STRUCTURE FOR A SEMICONDUCTOR POWER MODULE AND SEMICONDUCTOR POWER MODULE 审中-公开
公开(公告)号：WO2022167231A1
公开(公告)日：2022-08-11
申请号：PCT/EP2022/051325
申请日：2022-01-21
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： GUILLON, David , EHRBAR, Roman , SCHUDERER, Juergen , BEYER, Harald
IPC分类号： H01L23/373 , H01L23/498
摘要： A metal substrate structure (10) for a semiconductor power module comprises a metal top layer (11) having at least one penetrating recess (14) which is formed by means of stamping and a metal bottom layer (13). The metal substrate structure (10) further comprises a dielectric layer (12) which is coupled with both the metal top layer (11) and the metal bottom layer (13), wherein the dielectric layer (12) is formed by means of molding between the metal top layer (11) and the metal bottom layer (13).

62. 发明申请

WO2022144165A1 DETERMINATION OF RESIDUAL FLUX IN A POWER TRANSFORMER 审中-公开
公开(公告)号：WO2022144165A1
公开(公告)日：2022-07-07
申请号：PCT/EP2021/085440
申请日：2021-12-13
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： STANEK, Michael , PARIKH, Urmil , SONAGRA, Mehulbhai
IPC分类号： G01R31/62 , H02H9/00
摘要： Determination of residual flux and the validity of the residual flux determined is described. A parameter associated with a voltage of a transformer is monitored. Based on a comparison of the parameter associated with the voltage of the transformer against a preset threshold value integration of the voltage of the transformer is started. Further, the voltage of the transformer is integrated to compute a residual flux.

63. 发明申请

WO2022136086A1 POWER SEMICONDUCTOR MODULE, METHOD FOR MANUFACTURING THE SAME AND ELECTRICAL CONVERTER 审中-公开
公开(公告)号：WO2022136086A1
公开(公告)日：2022-06-30
申请号：PCT/EP2021/086096
申请日：2021-12-16
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： KICIN, Slavo , RIEDEL, Gernot , SCHUDERER, Jürgen , MOHN, Fabian
IPC分类号： H01L21/66 , H01L21/60 , H01L25/07 , H01L23/495
摘要： The disclosure relates to a power semiconductor module (34), comprising a substrate (12) which carries a plurality of power semiconductor devices (10), wherein the plurality of power semiconductor devices (10) comprises a first group of power semiconductor devices (10) and a second group of at least one power semiconductor device (10). The first group of power semiconductor devices (10) consists of at least two non-damaged power semiconductor devices (10b, 10c), and the second group of power semiconductor devices (10) consists of at least one damaged power semiconductor device (10a). The at least two non-damaged power semiconductor devices (10b, 10c) are electrically interconnected in a parallel configuration, and the second group of at least one power semiconductor device (10) is electrically separated from the members of the first group of power semiconductor devices (10). The disclosure further relates to an electrical converter and a method for manufacturing a power semiconductor module (34).

64. 发明申请

WO2022112322A1 BIDIRECTIONAL THYRISTOR DEVICE WITH ASYMMETRIC CHARACTERISTICS 审中-公开
公开(公告)号：WO2022112322A1
公开(公告)日：2022-06-02
申请号：PCT/EP2021/082811
申请日：2021-11-24
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： VOBECKY, Jan
IPC分类号： H01L29/06 , H01L29/08 , H01L29/423 , H01L29/747 , H01L29/74
摘要： A bidirectional thyristor device comprising a semiconductor body (2) extending in a vertical direction between a first main surface (21) and a second main surface (22) opposite the first main surface (21), a first main electrode (31) arranged on the first main surface (21), and a second main electrode (32) arranged on the second main surface (22), is specified, wherein the semiconductor body (2) comprises a first base layer (51) of a first conductivity type, a second base layer (52) of the first conductivity type, and a third base layer (53) of a second conductivity type different than the first conductivity type arranged between the first base layer (51) and the second base layer (52). The first main electrode (31) acts as a cathode for a first thyristor functional element (11) and as an anode for a second thyristor functional element (12) of the bidirectional thyristor device (1). The bidirectional thyristor further comprises first and second emitter regions (61, 62) of the second conductivity type with emitter short regions (71,72) of the first conductivity type therein. The bidirectional thyristor device (1) is configured asymmetrically with respect to the first thyristor functional element (11) and the second thyristor functional element (12), through different arrangements of the first (71) and second (72) emitter short regions at the first and second main side.

65. 发明申请

WO2022111870A1 TRANSFORMER WITH AIR-FLOW RE-DIRECTOR 审中-公开
公开(公告)号：WO2022111870A1
公开(公告)日：2022-06-02
申请号：PCT/EP2021/072654
申请日：2021-08-13
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： SUN, QingJun , XU, Ye
IPC分类号： H01F27/08 , H01F27/28
摘要： A transformer including a core, a plurality of winding coils arranged in proximity of the core to inductively couple to the core, a plurality of air-gaps to allow air flow in the proximity of at least one of the core and winding coils, and an air-flow re-director including a plurality of independently adjustable surfaces angled to re-direct a flow of a portion of a cooling air received into the re-director into at least one pre-determined air-gap.

66. 发明申请

WO2022111841A1 LOAD FORECASTING FOR ELECTRICAL EQUIPMENT USING MACHINE LEARNING 审中-公开
公开(公告)号：WO2022111841A1
公开(公告)日：2022-06-02
申请号：PCT/EP2020/086740
申请日：2020-12-17
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： CHEIM, Luiz
IPC分类号： G06N20/00 , G06Q10/04 , G06Q10/06 , G06Q50/06
摘要： Embodiments are disclosed for predicting, by a processor circuit, a load parameter value of an electrical equipment for a future time based on at least one machine learning model and a plurality of load parameter values including a set of predefined number of load parameter values extracted from a time series data stream of load parameter values obtained for the electrical equipment. There after calculating, by the processor circuit, an overload capability for the future time based on the predicted load parameter value and changing, by the processor circuit, at least one parameter associated with the electrical equipment at the present time based on the calculated overload capability for the future time.

67. 发明申请

WO2022106026A1 ELECTRICAL CONNECTOR HAVING AN ANNULAR CONTACT 审中-公开
公开(公告)号：WO2022106026A1
公开(公告)日：2022-05-27
申请号：PCT/EP2020/082904
申请日：2020-11-20
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： SAMUL, Boguslaw , OSTROWSKI, Joerg , GATZSCHE, Michael , SAXL, David
IPC分类号： H01R13/187 , H01R13/66 , H01H33/02
摘要： Electrical connector (44) comprising a connecting element (48) having a receiving hole (50) and being designed for mechanical and electrical connection to an electrical conductor (24), the receiving hole (50) having a plurality of grooves (52) extending circumferentially about an interior wall (54) of the receiving hole (50) and in communication with the receiving hole (50), and a plurality of contact elements (64), each contact element being housed in one of the plurality of grooves to ensure electrical contact with the electrical conductor (24) inserted in the connecting element (48). The connecting element (48) has a control segment (74a) extending longitudinally between two consecutive grooves (52) having an electrical resistance different from the electrical resistance of the side segments adjacent to the control segment (74a). The control segment (74a) can have a recess (70a) or be made of a material having a higher electrical resistance than the side segments.

68. 发明申请

WO2022105994A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE AND MANUFACTURING METHOD 审中-公开
公开(公告)号：WO2022105994A1
公开(公告)日：2022-05-27
申请号：PCT/EP2020/082533
申请日：2020-11-18
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： SALVATORE, Giovanni , SCHUDERER, Jürgen , LIU, Chunlei , KICIN, Slavo , MOHN, Fabian
IPC分类号： H01L21/60 , H01L25/03 , H01L25/07 , H01L23/31
摘要： In one embodiment, the power semiconductor module (1) comprises: - at least one chip-sized packaged semiconductor device (1), - an electrically insulating spacer body (4) arranged on the at least one cover body (23) of the at least one semiconductor device (1), - a plurality of contact pieces (3) that run through the spacer body (4) in the direction away from the chip top side (20) and that electrically contact the contact pedestals (22), and - a plurality of electric contact faces (51) electrically connected with the contact pieces (3) and located on a side of the spacer body (4) remote from the at least one semiconductor device (1).

69. 发明申请

WO2022048919A1 POWER SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：WO2022048919A1
公开(公告)日：2022-03-10
申请号：PCT/EP2021/073039
申请日：2021-08-19
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： VOBECKY, Jan , VEMULAPATI, Umamaheswara
IPC分类号： H01L29/06 , H01L29/423 , H01L29/74 , H01L21/332 , H01L29/08 , H01L23/482
摘要： Disclosed is a power semiconductor device comprising a semiconductor wafer having a first main side and a second main side opposite to the first main side. The semiconductor wafer comprises a plurality of parallel thyristor cells, wherein each thyristor cell comprises in an order from the first main side to the second main side (a) a cathode electrode and a gate electrode arranged on the first main side; (b) a cathode layer comprising a cathode region of a first conductivity type, forming an ohmic contact with the cathode electrode; (c) a first base layer of a second conductivity type different from the first conductivity type, wherein the cathode region is formed as a well in the first base layer and forms a first p-n junction between the first base layer and the cathode region; (d) a second base layer of the first conductivity type forming a second p-n junction with the first base layer; (e) an anode layer of the second conductivity type separated from the first base layer by the second base layer; wherein the gate electrode forms an ohmic contact with the first base layer; and an anode electrode is arranged on the second main side and forms an ohmic contact with the anode layer. The gate electrodes of the plurality of thyristor cells form a gate design comprising multiple polygons each comprising at least four struts. Disclosed is furthermore a method of manufacturing a Power semiconductor device.

70. 发明申请

WO2022043452A1 METHOD FOR OPERATING A CONVERTER, CONVERTER AND COMPUTER PROGRAM PRODUCT 审中-公开
公开(公告)号：WO2022043452A1
公开(公告)日：2022-03-03
申请号：PCT/EP2021/073639
申请日：2021-08-26
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： VASILADIOTIS, Michail , SIERRO, Nicolas
IPC分类号： H02M5/297 , H02M5/293 , H02M1/00
摘要： A converter (10) comprises a control arrangement (80) and a first number Z of modular-multilevel converters (13, 110) which are coupled in a parallel circuit. The first number Z is larger than 1. Each of the first number Z of modular-multilevel converters (13, 110) comprises a number M of branches (14 to 22) which each comprises at least a cell (23) with a capacitor (105) and semiconductor switches (106 to 109). A method for operating the converter (10) comprises generating at least a first voltage reference signal (VG_ref), a second voltage reference signal (VM_ref) and at least an inner voltage reference signal (Vbal_ref), combining these signals into a branch control signal (VAC_ref), generating cell control signals (S1 to S4) and providing the cell control signals (S1 to S4) to the semiconductor switches (106 to 109) of the cells (23).

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