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61. 发明专利

JP2001351900A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JP2001351900A
公开(公告)日：2001-12-21
申请号：JP2000171341
申请日：2000-06-07
申请人： SHARP KK , MORI YUZO
发明人： EHATA YUSUKE , OKUDA TORU , MORI YUZO
IPC分类号： H05H1/46 , B01J19/08 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device which actually consumes much more electric power for a local plasma than a matching device does. SOLUTION: This plasma treatment device 100 is provided with a sample stage 12 for mounting a sample 13 and a resonator which makes impedance- matching on the electric power inputted from a power source, and the resonator is provided with an enclosure 9A having a space in at least its inside and a rotary electrode which generates a plasma to the sample 13 when the electrode is rotated against the enclosure 9A. The rotary electrode contains an internal conductor arranged in the space and the internal conductor contains a rotary electrode body 8A which is arranged oppositely to the sample 13 and rotates against the enclosure 9A and sample 13 and a rotary electrode shaft 4A which rotates integrally with the electrode body 8A. The center of the electrode body 8A is substantially coincident with that of the electrode shaft 4A.

62. 发明专利

JP2001348665A AMORPHOUS SiC THIN FILM BY ATMOSPHERIC PLASMA CVD 失效
公开(公告)号：JP2001348665A
公开(公告)日：2001-12-18
申请号：JP2000168209
申请日：2000-06-05
申请人： MORI YUZO
发明人： MORI YUZO
IPC分类号： C01B31/36 , C23C16/42 , C23C16/50 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To prepare an amorphous Si thin film produced on a substrate by atmospheric plasma CVD capable of film deposition at a high speed >=10 times that in the conventional film deposition methods such as an RF sputtering method and a plasma CVD method under the reduced pressure. SOLUTION: The inside of a chamber 1 is disposed with a sample stage 4 provided with a heating stage and a rotary electrode 2, the space between the sample stage 4 and the electrode 2 is provided with a gas to hold a substrate 3 to the sample stage 4, a gaseous starting material of 0.1 to 10 atm containing an Si feed reaction gas, a C feed reaction gas and a carrier gas composed of an inert gas introduced into the chamber is involved in the surface of the electrode rotated at a high speed to form a gas flow crossing the gap, the electrode is fed with high-frequency electric power to generate plasma on the gap, high density radical based on the reaction gas is generated, and while the sample stage and the electrode are relatively moved, by radical reaction, an SiC thin film is deposited on the heated substrate.

63. 发明专利

JP2001007091A HIGH DENSITY PLASMA REACTION METHOD 失效
公开(公告)号：JP2001007091A
公开(公告)日：2001-01-12
申请号：JP21601799
申请日：1999-07-29
申请人： SHARP KK , MORI YUZO
发明人： HOJO YOSHIYUKI , OKUDA TORU , MORI YUZO
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To treat a substrate at a high speed, without heating the substrate above its allowable temp. SOLUTION: This plasma reacting method is such that a rotating electrode 1, a high frequency power source for applying a high frequency voltage to the rotary electrode 1, and a substrate scanner for scanning a substrate 2 in a direction parallel to the rotating electrode 1 are provided, the rotary electrode 1 is rotated at a high speed, to form a high speed flow of reaction gas across a gap between the rotary electrode 1 and the substrate 2, a high frequency voltage is applied from the high frequency power source to the electrode 1 to generate a high density plasma P based on the reaction gas, and plasma reaction is generated between the plasma P and the substrate 2 being scanned by the substrate scanner. It comprises the steps of generating the high density plasma P, based on the reactive gas between the electrode 1 and the substrate 2 and a step of scanning the substrate 2 at a sufficiently high speed level to keep the temp. of the substrate 2 in the plasma reaction temp. from exceeding its allowable temp.

64. 发明专利

JP2000200769A HIGH SPEED ETCHING METHOD OF SILICON 失效
公开(公告)号：JP2000200769A
公开(公告)日：2000-07-18
申请号：JP37482598
申请日：1998-12-28
申请人： SHARP KK , MORI YUZO
发明人： NISHIKAWA KAZUHIRO , OKUDA TORU , MORI YUZO
IPC分类号： H01L21/302 , B81C1/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a high speed etching method of Si by using a plasma chemical vaporization machining method and using SF6 doped with O2 as a reactive gas. SOLUTION: A high speed etching method of Si is a method for quickly etching an object to be machined by the action of Si by the use of plasma in a gaseous atmosphere, the plasma being generated by applying voltage with a frequency over 100 MHz between a first electrode and a second electrode, the object being arranged above the surface of the second electrode opposite to the first electrode with a gap of 1 mm or less between the object and the first electrode and being etched by the action of the plasma. The gas atmosphere has a pressure ranging from 0.1 to 2 atmospheric pressure and contains a mixed gas of SF6 and O2 and a rare gas of He, Ne, or Ar and a volume ratio of O2/(SF6+O2) is set at 0.25-0.5.

65. 发明专利

JP2000045083A SURFACE WORKING METHOD, SURFACE WORKING DEVICE AND FUNCTIONAL ELEMENT 失效
公开(公告)号：JP2000045083A
公开(公告)日：2000-02-15
申请号：JP21012998
申请日：1998-07-24
申请人： SHARP KK , MORI YUZO
发明人： OKUDA TORU , HOJO YOSHIYUKI , MORI YUZO
IPC分类号： G03F7/09 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a surface working method by which a work can be subjected to a finely rugged surface roughing treatment while reducing physical damage on the surface of the work. SOLUTION: The work 1 is set inside a reaction vessel 2, the reaction vessel 2 is evacuated, an atmospheric gas 9 is introduced from a reaction gas vessel 7 into the reaction vessel 2, and the atmospheric gas 9 is sealed or circulated. Next, a high frequency electric power is fed to working electrodes 3 and 4 from a high frequency power source 5 to generate plasma, charged particles in a reaction gas present in the plasma are allowed to collide against the surface of the work 1 by self-bias effect, and the surface of the work 1 is subjected to physico-chemical surface treatment by the chemical reaction between the radical and the work 1. After that, the work 1 is set inside another reaction vessel to execute chemical surface treatment for chemically reacting the radical present in the plasma with the surface of the work 1.

66. 发明专利

JPH1058236A MACHINING METHOD USING HYDROXYL GROUP IN ULTRAPURE WATER 失效
公开(公告)号：JPH1058236A
公开(公告)日：1998-03-03
申请号：JP21251796
申请日：1996-08-12
申请人： MORI YUZO
发明人： MORI YUZO
IPC分类号： B23H3/08 , C02F1/00 , C02F1/42 , C02F1/46 , C02F1/48
摘要： PROBLEM TO BE SOLVED: To purely machine a workpiece without leaving impurities on the machining surface thereof by removing the impurities, or forming an oxidized coat through a chemical elution reaction or oxidizing reaction process using a hydroxyl group or hydroxyl group ions. SOLUTION: Water molecules in ultrapure water 4 are ionized and a hydroxyl group or hydroxyl group ions so generated are supplied to the surface of a workpiece 1. A pure oxidized film is formed on material surface via the reaction of workpiece atoms with the hydroxyl group or hydroxyl group ions. or material surf ace atoms are removed and a desired shape is obtained through the repetition of the process. When the hydroxyl group or hydroxyl group ions as machining aids are generated via chemical reaction on the surface of an electrode 2 positioned near the surface of the workpiece 1 or on the surface of a solid having an ion exchange function or a catalytic function, workpiece surface in the vicinity of the surface of a solid generating such a hydroxyl group or ions is preferentially machined. Thus, the shape of a material generating the hydroxyl group or hydroxyl group ion is transcribed on the surface of the workpiece 1.

67. 发明专利

JPH09236411A MEASURING DEVICE FOR DIAMETER OF FINE PARTICLE 失效
公开(公告)号：JPH09236411A
公开(公告)日：1997-09-09
申请号：JP7137596
申请日：1996-02-29
申请人： MORI YUZO , JASCO CORP
发明人： MORI YUZO
IPC分类号： G01B11/08 , G01N15/14
摘要： PROBLEM TO BE SOLVED: To adequately measure a diameter of a fine particle without breaking a photomultiplier tube even when it receives an incident light having an unexpected excessive level, by providing means for emitting a laser light, scanning, collecting a light, applying an accelerated voltage, storing, changing a voltage, obtaining a characteristic of an output current with respect to an incident light quantity and obtaining data on the diameter of the fine particle in addition to the photomultiplier tube. SOLUTION: A measuring region is divided by an applying voltage of a photomultiplier tube 26 and an output current is made to be saturated at a current level equal to or lower than a rated current with respect to an incident light having an excessive level so that a wide range of a light quantity can be measured. Also, the photomultiplier tube 26 is not broken by the incident light having an unexpected excessive level. An oval face mirror condenser 22 and a parabolic mirror 24 are used as condenser means. A dispersion light from a surface of a specimen 10 to be measured is collected to a point by the oval face mirror condenser 22 and further collected to the photomultiplier tube 26 by the parabolic mirror 24, thereby efficiently collecting the dispersion light from the surface of the specimen 10 to be measured to the photomultiplier tube 26.

68. 发明专利

JPH0970669A SHAPE CREATING METHOD AND DEVICE THEREFOR 失效
公开(公告)号：JPH0970669A
公开(公告)日：1997-03-18
申请号：JP23034795
申请日：1995-09-07
申请人： MORI YUZO , NIKON CORP
发明人： TAKINO HIDEO , ITO HIROSHI , SHIBATA NORIO , EBI MASAMI , TANAKA HIROAKI , MORI YUZO
IPC分类号： H05H1/46 , B23K10/00 , C23F4/00 , G02B3/00 , H01L21/302 , H01L21/3065 , H01L27/14
摘要： PROBLEM TO BE SOLVED: To provide a machining device which machines by the radical reaction generated with a plasma and which is suitable for machining a curve face. SOLUTION: In a machining device having a support part 1 to mount an object to be machined 10, an electrode 2 to generate a plasma, a gas supplying part 4 to supply reaction gas at least to the neighborhood of the object to be machined 10, and a transferring means 6 to transfer the electrode 2 relatively against the object to be machined 10 in order to transfer the electrode 2 to the machining point of the object to be machined 10, in order to machine by keeping the plasma generating face of the electrode 2 in parallel with the tangent plane of the machining part of the object to be machined 10, an electrode inclining means 8 to incline the electrode is arranged.

69. 发明专利

JPH07308409A GOLF CLUB HEAD 失效
公开(公告)号：JPH07308409A
公开(公告)日：1995-11-28
申请号：JP10359794
申请日：1994-05-18
申请人： TSURUYA CO , MORI YUZO
发明人： MORI YUZO , MANABE MASAHIKO , TANAKA TOSHIHISA , NODA KIYONORI
IPC分类号： A63B53/04 , A63B102/32
摘要： PURPOSE:To provide a golf club head which is a golf club head for wood clubs formed of persimmon as a main member, has a big head, permits widening of a sweet spot and features excellent directional stability of a hit ball. CONSTITUTION:This golf club head is made of the persimmon as its main member and is formed with single or plural recessed parts 8 opened at least on its face side or sole side. These recessed parts 8 are clad with a face plate 4 or sole plate 5, by which gap parts 9 are formed in the head 1.

70. 发明专利

JPH07122768A PHOTOVOLTAIC ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH07122768A
公开(公告)日：1995-05-12
申请号：JP26626393
申请日：1993-10-25
申请人： SANYO ELECTRIC CO , MORI YUZO
发明人： MORI YUZO , KIYAMA SEIICHI
IPC分类号： H01L31/042 , B81B1/00
摘要： PURPOSE:To obtain a small type photoelectric conversion element mountable on a microscopic machine and the like and high voltage can be taken out. CONSTITUTION:An n-type semiconductor layer 31 and a p-type semiconductor layer 32 are formed on the prescribed region of the base semiconductor layer such as a single crystal silicon wafer and the like by doping impurities, and the photoelectric conversion units 33, composed of these semiconductor layers, are series-connected through the intermediary of low resistance layers 34.

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