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    • 65. 发明授权
    • Detecting device for a cash drawer and a point of sales system
    • 现金抽屉检测装置和销售点系统
    • US08224701B2
    • 2012-07-17
    • US12155279
    • 2008-06-02
    • Yu-Feng ChienYen-Yi WeiYi-Ming LinMeng-Yuan Tsai
    • Yu-Feng ChienYen-Yi WeiYi-Ming LinMeng-Yuan Tsai
    • G06Q20/00
    • G07G1/0027G06Q20/202G07G3/006
    • A detecting device for a cash drawer is used for detecting a status of the cash drawer. The detecting device includes an operation logic circuit and a switch element. The operation logic circuit has a first input terminal, a second input terminal and an output terminal. The first input terminal and the second input terminal are respectively coupled with a micro switch. The first input terminal and the second input terminal are respectively inputted with a high level voltage. When the first input terminal and the second input terminal have the same logic voltage levels, the operation logic circuit outputs a first logic level to the output terminal. When the first input terminal and the second input terminal have different logic voltage levels, the operation logic circuit outputs a second logic level to the output terminal. The switch element is coupled between an electromagnetic switch and the first input terminal.
    • 用于现金抽屉的检测装置用于检测现金抽屉的状态。 检测装置包括操作逻辑电路和开关元件。 操作逻辑电路具有第一输入端子,第二输入端子和输出端子。 第一输入端子和第二输入端子分别与微型开关耦合。 第一输入端子和第二输入端子分别输入高电平电压。 当第一输入端子和第二输入端子具有相同的逻辑电压电平时,操作逻辑电路向输出端子输出第一逻辑电平。 当第一输入端子和第二输入端子具有不同的逻辑电压电平时,操作逻辑电路向输出端子输出第二逻辑电平。 开关元件耦合在电磁开关和第一输入端子之间。
    • 66. 发明申请
    • METHOD FOR UNLOCKING SCREEN AND EXECUTING APPLICATION PROGRAM
    • 解锁屏幕和执行应用程序的方法
    • US20120174042A1
    • 2012-07-05
    • US13191485
    • 2011-07-27
    • Yi-Wei Chang
    • Yi-Wei Chang
    • G06F3/048
    • G06F3/04883G06F3/0486G06F3/0488
    • A method for unlocking screen and executing application program is provided. The method is adapted to a mobile device having a touch screen. Under a screen lock mode of the mobile device, the touch screen is used to detect a touch and drag operation of a user. Then, it is determined whether a start point of the touch and drag operation is located within a predetermined region and a dragging distance of the touch and drag operation along a predetermined path is over a predetermined distance. If yes, it is further determined whether an end point of the touch and drag operation is located within one of a plurality of segmented regions of the touch screen, which respectively correspond to a plurality of application programs. If yes, the screen is unlocked and the application program corresponding to segmented region where the end point is located is executed simultaneously.
    • 提供了解锁画面和执行应用程序的方法。 该方法适用于具有触摸屏的移动设备。 在移动设备的屏幕锁定模式下,触摸屏用于检测用户的触摸和拖动操作。 然后,确定触摸和拖动操作的起始点是否位于预定区域内,并且沿着预定路径的触摸和拖动操作的拖动距离超过预定距离。 如果是,则进一步确定触摸和拖动操作的终点是否位于触摸屏的多个分段区域之一内,其分别对应于多个应用程序。 如果是,则屏幕被解锁并且与终点所在的分段区域相对应的应用程序被同时执行。
    • 67. 发明授权
    • Method of fabricating complementary metal-oxide-semiconductor (CMOS) Device
    • 互补金属氧化物半导体(CMOS)器件的制造方法
    • US08067281B1
    • 2011-11-29
    • US12830371
    • 2010-07-05
    • Yi-Wei ChenChien-Chung HuangNien-Ting HoKuo-Chih Lai
    • Yi-Wei ChenChien-Chung HuangNien-Ting HoKuo-Chih Lai
    • H01L21/8238
    • H01L21/823807H01L21/823814H01L21/823864H01L29/7848
    • A method of fabricating a CMOS device is provided. First, first and second gates, first and second offset spacers and first and second lightly-doped regions are respectively formed in first and second type metal-oxide-semiconductor regions. A mask layer is respectively formed on the first and second gates. Next, an epitaxial layer is formed in the substrate on two sides of the second gate. Next, first and second spacers, first and second doped regions are formed. Next, a portion of the first spacer is removed to expose a portion of a surface of the first lightly-doped region, thereby forming a first slimmed spacer. Next, a coating layer containing silicon is formed to cover the exposed first lightly-doped region, the first and second doped regions. Next, the mask layer is removed. Next, a metal silicide layer is formed on the first and second gates and the silicon layer.
    • 提供一种制造CMOS器件的方法。 首先,第一和第二栅极分别在第一和第二类型金属氧化物半导体区域中形成第一和第二偏移间隔物以及第一和第二轻掺杂区域。 掩模层分别形成在第一和第二栅极上。 接下来,在第二栅极的两侧的基板中形成外延层。 接下来,形成第一和第二间隔物,形成第一和第二掺杂区域。 接下来,去除第一间隔物的一部分以暴露第一轻掺杂区域的表面的一部分,从而形成第一细长间隔物。 接下来,形成包含硅的涂层以覆盖暴露的第一轻掺杂区域,第一和第二掺杂区域。 接下来,去除掩模层。 接下来,在第一和第二栅极和硅层上形成金属硅化物层。