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61. 发明申请

US20140169341A1 UPLINK CHANNEL ESTIMATION FOR A SOFTWARE DEFINED RADIO 有权
标题翻译：软件定义无线电的上行通道估计
公开(公告)号：US20140169341A1
公开(公告)日：2014-06-19
申请号：US13825800
申请日：2010-09-24
申请人： Senjie Zhang , Xuebin Yang , Guangjie Li , Peng Cheng
发明人： Senjie Zhang , Xuebin Yang , Guangjie Li , Peng Cheng
IPC分类号： H04B1/00
CPC分类号： H04B1/0003 , H04L25/0204 , H04L25/0212 , H04L25/022 , H04L25/0232 , H04L25/0242
摘要： A system and method for uplink channel estimation for a software defined radio is disclosed. The method comprises dividing an allocated bandwidth for a received signal on the uplink channel into N segments. The uplink channel estimation is processed for each of the N segments as a separate process. The uplink channel estimation includes pre-processing each of the N segments of the received signal; Wiener filtering the pre-processed segments of the received signal in the frequency domain; and Wiener filtering each of the frequency filtered segments in the time domain to determine a channel estimate for each of the N segments for use in equalizing the received signal.
摘要翻译：公开了一种用于软件定义无线电的上行链路信道估计的系统和方法。该方法包括将上行链路信道上的接收信号的分配带宽划分为N个段。对于N个段中的每一个处理上行链路信道估计作为单独的处理。上行链路信道估计包括预处理接收信号的N个段中的每一个; 维纳对频域中接收信号的预处理段进行滤波; 并且维纳滤波在时域中的每个频率滤波的段以确定用于均衡接收信号的N个段中的每一个的信道估计。

62. 发明申请

US20110079022A1 HYBRID THERMOELECTRIC-EJECTOR COOLING SYSTEM 有权
标题翻译：混合热电喷枪冷却系统
公开(公告)号：US20110079022A1
公开(公告)日：2011-04-07
申请号：US12896597
申请日：2010-10-01
申请人： Hongbin Ma , Peng Cheng , Joseph A. Boswell
发明人： Hongbin Ma , Peng Cheng , Joseph A. Boswell
IPC分类号： F25B21/02 , F28D15/04
CPC分类号： F25B21/02 , F28D15/043
摘要： A hybrid thermoelectric-ejector active cooling system having an increased Coefficient of Performance (COP) when compared to typical thermoelectric cooling modules. A thermoelectric cooling module is integrated with an ejector cooling device so that heat from the thermoelectric cooling module is rejected to a high temperature evaporator of the ejector cooling device. This provides for a total COP greater than the sum of the COPs of the thermoelectric cooling module and ejector cooling device individually. For example, given 1 unit input power into the thermoelectric cooling module, the heat received by the cold side of the thermoelectric cooling module would be COPTEC×1; and the energy rejected by the hot side of the thermoelectric cooling module and to drive the ejector cooling device would be COPTEC+1. Thus, the cooling received by the low temperature evaporator of the ejector cooling device is COPEJ×(COPTEC+1); and therefore total COPTE-Ej-AC is COPEj+COPTEC+COPEj×COPTEC. In addition, the hybrid thermoelectric ejector active cooling system will be able to operate at higher temperature differentials than standalone thermoelectric cooling devices.
摘要翻译：与典型的热电冷却模块相比，具有增加的性能系数（COP）的混合热电喷射器主动冷却系统。热电冷却模块与喷射器冷却装置集成，使得来自热电冷却模块的热量被排斥到喷射器冷却装置的高温蒸发器。这提供了大于热电冷却模块和喷射器冷却装置的COP的总和的总COP。例如，给热电冷却模块输入1个单位输入功率，热电冷却模块的冷端接收的热量为COPTEC×1; 并且由热电冷却模块的热侧拒绝并驱动喷射器冷却装置的能量将为COPTEC + 1。因此，由喷射器冷却装置的低温蒸发器接收的冷却是COPEJ×（COPTEC + 1）; 因此总COPTE-Ej-AC为COPEj + COPTEC + COPEj×COPTEC。此外，混合热电喷射器主动冷却系统将能够以比独立的热电冷却装置更高的温度差运行。

63. 发明授权

US07005314B2 Sacrificial layer technique to make gaps in MEMS applications 有权
公开(公告)号：US07005314B2
公开(公告)日：2006-02-28
申请号：US09894334
申请日：2001-06-27
申请人： Qing Ma , Peng Cheng
发明人： Qing Ma , Peng Cheng
IPC分类号： H01L21/00
CPC分类号： B81C1/00126 , B81C2201/0109 , H03H3/0072
摘要： A method comprising over an area of a substrate, forming a plurality of three dimensional first structures; following forming the first structures, conformally introducing a sacrificial material over the area of the substrate; introducing a second structural material over the sacrificial material; and removing the sacrificial material. An apparatus comprising a first structure on a substrate; and a second structure on the substrate and separated from the first structure by an unfilled gap defined by the thickness of a removed film.

64. 发明授权

US06998357B2 High dielectric constant metal oxide gate dielectrics 失效
公开(公告)号：US06998357B2
公开(公告)日：2006-02-14
申请号：US10646034
申请日：2003-08-22
申请人： Gang Bai , David B. Fraser , Brian S. Doyle , Peng Cheng , Chunlin Liang
发明人： Gang Bai , David B. Fraser , Brian S. Doyle , Peng Cheng , Chunlin Liang
IPC分类号： H01L21/469
CPC分类号： H01L29/513 , H01L21/28185 , H01L21/28194 , H01L21/28211 , H01L21/28229 , H01L29/517
摘要： A method of forming a dielectric layer suitable for use as the gate dielectric layer of a metal-oxide-semiconductor field effect transistor (MOSFET) includes oxidizing the surface of a silicon substrate, forming a metal layer over the oxidized surface, and reacting the metal with the oxidized surface to form a substantially intrinsic layer of silicon superjacent the substrate, wherein at least a portion of the silicon layer may be an epitaxial silicon layer, and a metal oxide layer superjacent the silicon layer. In a further aspect of the present invention, an integrated circuit includes a plurality of MOSFETs, wherein various ones of the plurality of transistors have metal oxide gate dielectric layers and substantially intrinsic silicon layers subjacent the metal oxide dielectric layers.

65. 发明授权

US06650204B2 Resonator frequency correction by modifying support structures 失效
公开(公告)号：US06650204B2
公开(公告)日：2003-11-18
申请号：US10307053
申请日：2002-11-27
申请人： Qing Ma , Peng Cheng , Valluri Rao
发明人： Qing Ma , Peng Cheng , Valluri Rao
IPC分类号： H03H924
CPC分类号： H03H3/0077 , H03H9/2463 , Y10S977/70 , Y10S977/721 , Y10S977/733 , Y10S977/888 , Y10S977/889
摘要： A method including to a resonator coupled to at least one support structure on a substrate, the resonator having a resonating frequency in response to a frequency stimulus, modifying the resonating frequency by modifying the at least one support structure. A method including forming a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. A method including applying a frequency stimulus to a resonator coupled to at least one support structure on a chip-level substrate determining a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. An apparatus including a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency tuned by the modification of the at least one support structure to a selected frequency stimulus.

66. 发明授权

US06573822B2 Tunable inductor using microelectromechanical switches 有权
标题翻译：可调电感采用微机电开关
公开(公告)号：US06573822B2
公开(公告)日：2003-06-03
申请号：US09884738
申请日：2001-06-18
申请人： Qing Ma , Peng Cheng , Valluri Rao
发明人： Qing Ma , Peng Cheng , Valluri Rao
IPC分类号： H01F500
CPC分类号： H01F5/003 , H01F17/0006 , H01F21/12 , H01H59/0009 , H01L24/19 , H01L2924/12042 , H01L2924/14 , H01L2924/00
摘要： A tunable inductor is disclosed. The tunable inductor comprises a helical or spiral inductor formed on a semiconductor substrate having an input and an output. The helical inductor has a full length that provides a full inductance. Also, a full inductance switch is disposed between the output and the full length of the helical inductor. Finally, at least one microelectromechanical (MEMS) switch is disposed between the output and an intermediate location of the helical inductor.
摘要翻译：公开了一种可调电感器。可调电感器包括形成在具有输入和输出的半导体衬底上的螺旋或螺旋形电感器。螺旋电感器具有提供全电感的全长。此外，全电感开关设置在螺旋电感器的输出端和全长之间。最后，至少一个微机电（MEMS）开关设置在螺旋电感器的输出端和中间位置之间。

67. 发明授权

US06479921B2 Micro-electromechanical structure resonator, method of making, and method of using 失效
标题翻译：微机电结构谐振器，制造方法和使用方法
公开(公告)号：US06479921B2
公开(公告)日：2002-11-12
申请号：US10046128
申请日：2002-01-09
申请人： Qing Ma , Peng Cheng
发明人： Qing Ma , Peng Cheng
IPC分类号： H02N100
CPC分类号： H03H3/0077 , B81B3/007 , G11B5/484 , G11B21/16 , H03H9/24 , H03H9/2463 , H03H2009/0233
摘要： The invention relates to a hollow microbeam that is fabricated upon a base or pedestal. Processing of the hollow microbeam includes forming at least one hollow channel in the microbeam by removing temporary fillers after formation of the microbeam. The inventive microbeam may provide at least an order of magnitude increase in oscillational frequency over a solid microbeam.
摘要翻译：本发明涉及一种制造在基座或基座上的中空微波束。中空微束的加工包括通过在形成微束之后去除临时填料而在微束中形成至少一个中空通道。本发明的微束可以在固体微束上提供振荡频率至少一个数量级的增加。

68. 发明授权

US06445106B1 Micro-electromechanical structure resonator, method of making, and method of using 有权
公开(公告)号：US06445106B1
公开(公告)日：2002-09-03
申请号：US09507228
申请日：2000-02-18
申请人： Qing Ma , Peng Cheng
发明人： Qing Ma , Peng Cheng
IPC分类号： G11B900
CPC分类号： H03H3/0077 , B81B3/007 , G11B5/484 , G11B21/16 , H03H9/24 , H03H9/2463 , H03H2009/0233
摘要： The invention relates to a hollow microbeam that is fabricated upon a base or pedestal. Processing of the hollow microbeam includes forming at least one hollow channel in the microbeam by removing temporary fillers after formation of the microbeam. The inventive microbeam may provide at least an order of magnitude increase in oscillational frequency over a solid microbeam.

69. 发明授权

US06355534B1 Variable tunable range MEMS capacitor 有权
标题翻译：可变可调范围的MEMS电容器
公开(公告)号：US06355534B1
公开(公告)日：2002-03-12
申请号：US09491560
申请日：2000-01-26
申请人： Peng Cheng , Qing Ma
发明人： Peng Cheng , Qing Ma
IPC分类号： H01L2120
CPC分类号： H01G5/16 , Y10T29/435
摘要： The invention relates to a variable capacitor and method of making it. The variable capacitor comprises a fixed charge plate disposed in a substrate, a movable charge plate disposed above the fixed charge plate, and a stiffener affixed to the movable charge plate. The movable charge plate may be patterned to form a movable actuator plate where the fixed charge plate is elevated above a fixed actuator plate.
摘要翻译：本发明涉及一种可变电容器及其制造方法。可变电容器包括设置在基板中的固定充电板，设置在固定充电板上方的可移动充电板和固定到可移动充电板的加强件。可移动充电板可以被图案化以形成可动致动器板，其中固定的充电板在固定的致动器板上方升高。

70. 发明授权

US5891805A Method of forming contacts 失效
标题翻译：形成接触的方法
公开(公告)号：US5891805A
公开(公告)日：1999-04-06
申请号：US766330
申请日：1996-12-13
申请人： Peng Cheng , Brian S. Doyle
发明人： Peng Cheng , Brian S. Doyle
IPC分类号： H01L21/033 , H01L21/768 , H01L21/302
CPC分类号： H01L21/76885 , H01L21/0337
摘要： A method of forming a contact is disclosed. A substrate having a desired electrical contact location is provided. The substrate has a conductive layer. A first mask with an edge over the desired electrical contact location is formed on the substrate. A contact material is deposited over the first mask and the substrate. A first portion of the contact material is then removed such that a second portion of the contact material remains to form a contact adjacent to the edge of the mask, over the desired electrical contact location.
摘要翻译：公开了形成接触的方法。提供具有所需电接触位置的基板。基板具有导电层。在衬底上形成具有在所需电接触位置上的边缘的第一掩模。接触材料沉积在第一掩模和基底上。然后去除接触材料的第一部分，使得接触材料的第二部分保留以在所需的电接触位置上形成邻近掩模边缘的接触。

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