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    • 70. 发明授权
    • Process for producing silicon or ferrosilicon in a low-shaft electric
furnace
    • 在低轴电炉中生产硅或硅铁的工艺
    • US4820341A
    • 1989-04-11
    • US865164
    • 1986-05-20
    • Gert-Wilhelm LaskRobert Nooden
    • Gert-Wilhelm LaskRobert Nooden
    • C01B33/02C01B20060101C01B31/30C01B33/025C01B33/06C04B20060101C22C20060101C22C33/00C22C38/02
    • C01B33/025C22C33/003
    • A process for the production of silicon in a low-shaft electric furnace, in which raw-material blanks are first formed which contain fine-grain silicon dioxide, e.g. in the form of sand, and carbon in excess in respect of the reduction to silicon carbide and the raw-material blanks are introduced into the low-shaft furnance as a charge in mixture with silicon dioxide in lump form. The silicon dioxide in the raw-material moldings is reduced to silicon carbide in an upper part of the low-shaft electric furnace at a temperature of below 1600.degree. C. and coke structure agglomerates are formed from the excess carbon of the raw-material moldings. In a lower part of the low-shaft electric furnace, the silicon dioxide in lump form, is reduced to silicon with silicon carbide and carbon from the coke structure agglomerates at a temperature of above 1600.degree. C., preferably from 1800.degree. to 200.degree. C. The raw-material moldings are formed with bituminous binder containing a fine-particle silica powder. The silicon carbon reduction results in coke structure agglomerates having a very large internal carbon area in accordance with the internal area and percentage proportion of silica powder in the raw-material moldings. The silicon dioxide and gaseous silicon monoxide are reduced with the coke structure agglomerates having the increased internal area.
    • 一种在低轴电炉中生产硅的方法,其中首先形成含有细粒二氧化硅的原料坯料,例如, 以砂的形式,并且关于还原为碳化硅的碳过量,并且原料坯料作为与二氧化硅块状形式的混合物的电荷引入低轴炉中。 原料模制品中的二氧化硅在低轴电炉的上部在低于1600℃的温度下还原成碳化硅,焦炭结构聚集体由原料模制品的多余碳形成 。 在低轴电炉的下部,块状的二氧化硅由碳化硅还原为硅,焦炭结构中的碳在高于1600℃,优选1800〜200℃的温度下还原。 原料模制品由含有细颗粒二氧化硅粉末的沥青粘合剂形成。 根据原料模制品中的二氧化硅粉末的内部面积和百分比,硅碳还原导致具有非常大的内部碳面积的焦炭结构聚集体。 二氧化硅和气态一氧化硅随焦炭结构团聚物的内部面积增加而减少。