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61. 发明专利

JPH05319983A PRODUCTION OF SINGLE CRYSTAL 失效
公开(公告)号：JPH05319983A
公开(公告)日：1993-12-03
申请号：JP15411892
申请日：1992-05-22
申请人： DENKI KAGAKU KOGYO KK
发明人： TERUI YOSHINORI , TERASAKI RYUICHI
IPC分类号： C30B25/18 , C30B11/00 , C30B11/12 , C30B29/06 , C30B29/62 , G01R1/067
摘要： PURPOSE:To obtain a single crystal with improved quality through such a way that a pattern portion of a specific metal layer is made and processed in a projected form, and a single crystal constituent element is taken into liquid droplets consisting of metals comprising the pattern portion in a raw material gas atmosphere and the single crystal is grown on a substrate. CONSTITUTION:An Au dot 2 with a diameter of D is formed on a Si single crystal substrate 1 and then masked, and portions other than the dot 2 are etched and the periphery of the masked part is also etched, thus forming a projected part 6. Thence, this part is heated and Au and Si are mutually dissolved into Au-Si alloy droplets 5. In this case, the etching depth v for the Si substrate is set larger than the Si etching depth w. In this state, a SiCl4/H2 mixed gas is introduced to take Si into the alloy droplets 5 to effect a supersaturated state and Si is deposited on the Si substrate to form a tapered solid Si under the droplets. Si deposition is further advanced to make the droplets into a hemispheric form and this deposition process is continued, thus forming the objective columnar Si single crystal.

62. 发明专利

JPH0242800B2 失效
公开(公告)号：JPH0242800B2
公开(公告)日：1990-09-26
申请号：JP4105985
申请日：1985-03-04
IPC分类号： C30B11/12 , C30B29/46 , H01L21/18 , H01L21/208

63. 发明专利

JPH0131451B2 失效
公开(公告)号：JPH0131451B2
公开(公告)日：1989-06-26
申请号：JP16782781
申请日：1981-10-20
申请人： EAROKEMU RISAACHI LAB INC
发明人： ROBAATO KEI GORUDO , CHAARUZU AARU DEITSUKUSON
IPC分类号： C01B33/02 , B01J12/00 , B01J19/26 , C01B33/027 , C01B33/033 , C30B11/12 , C30B29/06

64. 发明专利

JPS5928327A Forming method of single crystal semiconductor film 失效
标题翻译：单晶半导体膜的形成方法
公开(公告)号：JPS5928327A
公开(公告)日：1984-02-15
申请号：JP13739282
申请日：1982-08-09
申请人： Nippon Telegr & Teleph Corp
发明人： MORI HIDEFUMI , IKEDA MASAHIRO
IPC分类号： H01L27/00 , C30B11/12 , H01L21/20 , H01L21/336 , H01L21/84 , H01L21/86 , H01L29/78 , H01L29/786 , H01L31/04
CPC分类号： C30B11/12
摘要： PURPOSE:To obtain a single crystal Si film at a low temperature on a glass substrate of low cost by such an arrangement wherein when crystals composed of an alloy of Au and Si are caused to educe on an amorphous substrate, the orientation of crystals is controlled by the repetitive patterns of Au film. CONSTITUTION:On a quartz glass substrate 11, a film of Au 12 which forms eutectic crystal with Si is caused to adhere thereto, a resist film of specific pattern 13 is provided thereon, and spatter etching is processed on exposed parts of the film 12 and a repetitive pattern of polygon 14 having a vertical angle which is a multiple of about 60 deg. is obtained. Here, the pattern 14 shall be a trapezoid having vertical angles of 60 deg. and 120 deg. and the distance between opposing sides shall be approx. 1mum, and pitch shall be approx. 1.2mum. Next, the substrate 11 is heated up to a temperature higher than the eutectic temperature of Si and Au, and Si is caused to adhere by evaporation, and eutectic alloy of Si-Au is caused to generate between patterns 14, and single crystal Si layer 19 is caused to generate of which crystal direction is aligned, by using surplus Si 18 adhered to the pattern 14. At the same time, Au is moved from the alloy 17 and the desired Si-Au thin film 20 is obtained.
摘要翻译：目的：通过这样的结构，在低成本的玻璃基板上获得单晶Si膜，其中当由非晶衬底上由Au和Si的合金构成的晶体退火时，晶体的取向被控制通过Au膜的重复图案。构成：在石英玻璃基板11上，使与Si形成共晶的Au 12的膜附着在其上，在其上设置特定图案13的抗蚀剂膜，并在薄膜12的露出部分上进行溅射蚀刻，具有大约60度的倍数的垂直角的多边形14的重复图案。获得。这里，图案14是具有60度的垂直角的梯形。和120度相对侧之间的距离约为 1mum，音高约为 1.2mum。接下来，将基板11加热到高于Si和Au的共晶温度的温度，并且通过蒸发使Si附着，并且使Si-Au的共晶合金在图案14和单晶Si层之间产生通过使用附着在图案14上的剩余Si 18，使其生成晶体方向排列。同时，Au从合金17移动并获得所需的Si-Au薄膜20。

65. 发明专利

JPS58196844A Preparation of ultra-fine fiber 失效
标题翻译：超细纤维的制备
公开(公告)号：JPS58196844A
公开(公告)日：1983-11-16
申请号：JP7792282
申请日：1982-05-10
申请人： Chikara Hayashi , Res Dev Corp Of Japan
发明人： HAYASHI CHIKARA
IPC分类号： C30B11/12 , B01J19/00 , B01J19/08 , C30B25/00
CPC分类号： B01J19/0006
摘要： PURPOSE:To make it possible to freely adjust the thickness of an ultra-fine fiber, by a method wherein a chain like magnetic ultra-fine particle is erected on a foundation plate while a gas is reacted with the particle at the leading end part thereof and the other end part thereof is attracted by a magnetic field. CONSTITUTION:When chain like magnetic ultra-fine particles 5 are arranged to the inner wall surface of a foundation plate 1 so as to be erected by a magnet 4 and a reaction gas is flowed through the reaction part of the foundation plate 1, at the contact part of the leading end part of each chain like magnetic ultra- fine particle 5 and the wall surface, the reaction of the reaction gas is carried out but, in this case, an electromagnetic magnet 6 is brought close to each chain like magnetic ultra-fine particle 5 to attract the other end part thereof. By this method, the thickness of a formed ultra-fine fiber can be freely adjusted by predetermined tensile force.
摘要翻译：目的：为了可以自由地调节超细纤维的厚度，通过在基板上竖起链状磁性超细颗粒的方法，同时使气体与其前端的颗粒反应其另一端部被磁场吸引。构成：当将磁性超细颗粒5布置在基板1的内壁表面上以由磁体4竖起并且反应气体流过基板1的反作用部分时，在每个链条的前端部分如磁性超细颗粒5和壁表面的接触部分，进行反应气体的反应，但是在这种情况下，电磁磁体6靠近每个链条，如磁性超细微粒5以吸引其另一端部。通过该方法，可以通过预定的拉伸力自由调节成形的超细纤维的厚度。

66. 发明专利

JPS5735160B2 JPS5735160B2 - 失效
公开(公告)号：JPS5735160B2
公开(公告)日：1982-07-27
申请号：JP8961376
申请日：1976-07-27
IPC分类号： C30B25/00 , C01F7/16 , C04B35/622 , C30B11/12 , C30B29/26 , C30B29/62 , D01F9/08
CPC分类号： C04B35/62231

67. 发明专利

JPS56164095A PREPARATION OF SEMICONDUCTOR USING SEALED CONTAINER 失效
公开(公告)号：JPS56164095A
公开(公告)日：1981-12-16
申请号：JP6947380
申请日：1980-05-23
申请人： SANKEN ELECTRIC CO LTD
发明人： KIYOMURA AKIO , TAMURA ISAMU
IPC分类号： C30B11/06 , C30B11/12 , C30B29/40 , C30B29/44 , H01L21/02 , H01L21/208 , H01L21/324
摘要： PURPOSE:To prepare a crystal or element of semiconductor with preventing the deformation of container relatively readily and securely, by detecting pressure in the container based on the deformation of the sealed container, adjusting the heating temperature of a substance to be vaporized so that the pressure in the container is regulated. CONSTITUTION:For example, in a devic for growing GaP crystal, when the amount of the red phosphours 4 is reduced with the growth of crystal 4 and its vaporization amount is lowered, the pressure in the sealed container 3 made of quartz is reduced, and the bottom 9a of the sealing plug 9 is dented downward. Consequently, the displacement rod 11 is lowered, and reduction in pressure in the container 3 is detected by both the scale plate 12 and the automatic pressure detector 14. When an automatic controlling loop is formed, the output of the device 14 is sent through the electric signal forming circuit 17 to the differential amplifier 18 as detection voltage, working as an output. The voltage is compared with the reference voltage 19, the heater 5 controlling circuit 20 is regulated by the differential output, the vaporization amount of the red phosphours 4 is changed, and the pressure in the container 3 is kept at the fixed value.

68. 发明专利

JPS5343158B1 失效
公开(公告)号：JPS5343158B1
公开(公告)日：1978-11-17
申请号：JP5694672
申请日：1972-06-09
IPC分类号： C30B11/00 , C30B11/10 , C30B11/12 , B01J17/06 , C01B21/06 , C01B31/26 , H01L21/208

69. 发明专利

JPS515910B1 失效
公开(公告)号：JPS515910B1
公开(公告)日：1976-02-24
申请号：JP9575770
申请日：1970-10-30
IPC分类号： C01G11/00 , C01G13/00 , C30B11/12 , C30B29/48 , B01J17/08

70. 发明专利

JPS511546B1 失效
公开(公告)号：JPS511546B1
公开(公告)日：1976-01-19
申请号：JP3633971
申请日：1971-05-28
IPC分类号： C30B11/00 , C30B11/06 , C30B11/12 , B01J17/06

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