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71. 发明申请

US20110195570A1 INTEGRATION OF BOTTOM-UP METAL FILM DEPOSITION 有权
标题翻译：底部金属膜沉积的整合
公开(公告)号：US20110195570A1
公开(公告)日：2011-08-11
申请号：US12702525
申请日：2010-02-09
申请人： Simon Su-Horng Lin , Chi-Ming Yang , Chyi Shyuan Chern , Chin-Hsiang Lin
发明人： Simon Su-Horng Lin , Chi-Ming Yang , Chyi Shyuan Chern , Chin-Hsiang Lin
IPC分类号： H01L21/3205
CPC分类号： H01L29/78 , C23C14/022 , C23C14/046 , C23C14/18 , C23C14/221 , C23C16/0263 , C23C16/045 , C23C16/06 , C23C16/48 , C23C16/484 , H01L21/28079 , H01L21/28088 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76865 , H01L21/76877 , H01L29/4966 , H01L29/66545
摘要： The described embodiments of methods of bottom-up metal deposition to fill interconnect and replacement gate structures enable gap-filling of fine features with high aspect ratios without voids and provide metal films with good film quality. In-situ pretreatment of metal film(s) deposited by gas cluster ion beam (GCIB) allows removal of surface impurities and surface oxide to improve adhesion between an underlying layer with the deposited metal film(s). Metal films deposited by photo-induced chemical vapor deposition (PI-CVD) using high energy of low-frequency light source(s) at relatively low temperature exhibit liquid-like nature, which allows the metal films to fill fine feature from bottom up. The post deposition annealing of metal film(s) deposited by PI-CVD densifies the metal film(s) and removes residual gaseous species from the metal film(s). For advanced manufacturing, such bottom-up metal deposition methods address the challenges of gap-filling of fine features with high aspect ratios.
摘要翻译：自下而上金属沉积以填充互连和替代栅极结构的方法的所述实施例使得能够在没有空隙的情况下间隙填充具有高纵横比的精细特征，并提供具有良好膜质量的金属膜。通过气体簇离子束（GCIB）沉积的金属膜的原位预处理允许去除表面杂质和表面氧化物以改善下层与沉积的金属膜之间的粘附。通过使用高能量的低频光源在较低温度下通过光致化学气相沉积（PI-CVD）沉积的金属膜表现出液体性质，这允许金属膜从下向上填充精细特征。通过PI-CVD沉积的金属膜的后沉积退火致密化金属膜并从金属膜去除残余的气态物质。对于先进的制造，这种自下而上的金属沉积方法解决了具有高纵横比的精细特征的间隙填充的挑战。

72. 发明申请

US20110065237A1 APPARATUS AND METHOD FOR MANUFACTURING MULTI-COMPONENT OXIDE HETEROSTRUCTURES 有权
标题翻译：用于制造多组分氧化物结构的装置和方法
公开(公告)号：US20110065237A1
公开(公告)日：2011-03-17
申请号：US12813394
申请日：2010-06-10
申请人： Mark Joseph Bennahmias , Michael John Zani , Jeffrey Winfield Scott
发明人： Mark Joseph Bennahmias , Michael John Zani , Jeffrey Winfield Scott
IPC分类号： H01L21/04 , C23C14/08
CPC分类号： C23C16/40 , C23C16/0263 , C23C16/45525 , H01L49/006
摘要： Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and metallization to produce ultra-high density MCOH nano-electronic devices. Applications include ultra-high density MCOH memory and logic, as well as electronic functionality based on single electrons, for example a novel flash memory cell Floating-Gate (FG) transistor with LaAlO3 as a gate tunneling dielectric. Other types of memory devices (DIMMS, DRAM, and DDR) made with patterned ALD of LaAlO3 as a gate dielectric are also possible.
摘要翻译：本文公开的某些实施例涉及使用表面成核来形成钙钛矿材料的原子层沉积（ALD），然后进行图案化蚀刻和金属化以形成超高密度MCOH纳米电子器件的多组分氧化物异质结构（MCOH）的形成。应用包括超高密度MCOH存储器和逻辑，以及基于单个电子的电子功能，例如具有LaAlO 3作为栅极隧道电介质的新型闪存单元浮栅（FG）晶体管。使用LaAlO 3的图案化ALD作为栅极电介质制成的其他类型的存储器件（DIMMS，DRAM和DDR）也是可能的。

73. 发明授权

US07541069B2 Method and system for coating internal surfaces using reverse-flow cycling 失效
标题翻译：使用逆流循环涂覆内表面的方法和系统
公开(公告)号：US07541069B2
公开(公告)日：2009-06-02
申请号：US11074252
申请日：2005-03-07
申请人： Andrew William Tudhope , William John Boardman , Raul Donate Mercado , Frederick Contreras
发明人： Andrew William Tudhope , William John Boardman , Raul Donate Mercado , Frederick Contreras
IPC分类号： C23C16/00 , H01L21/441
CPC分类号： C23C16/0245 , C23C16/0263 , C23C16/045 , C23C16/26 , C23C16/45502 , C23C16/45578 , C23C16/503 , C23C16/515
摘要： A method and system for coating the internal surfaces of a workpiece is presented. A bias voltage is connected to a workpiece, which functions as a cathode. A gas source and a vacuum source are coupled to each opening through a flow control system. The flow control system is capable of a first mode which enables a first opening to function as a gas inlet and a second opening to function as a vacuum exhaust. The flow control system also has a second mode which enables a first opening to function as a vacuum exhaust and a second opening to function as a gas inlet. The cycling may also be used to coat internal surfaces of a workpiece with a single opening. Cycling the flow control system between the first mode and second mode is performed until a uniform coating along the internal surfaces of the workpiece is achieved.
摘要翻译：提出了一种用于涂覆工件内表面的方法和系统。偏置电压连接到作为阴极的工件。气体源和真空源通过流量控制系统耦合到每个开口。流量控制系统能够实现第一模式，其能够使第一开口用作气体入口和用作真空排气的第二开口。流量控制系统还具有第二模式，其使得第一开口能够用作真空排气，第二开口用作气体入口。循环也可用于用单个开口涂覆工件的内表面。执行第一模式和第二模式之间的流量控制系统的循环，直到实现沿着工件的内表面的均匀涂覆。

74. 发明申请

US20080038524A1 Selective Doping of a Material 审中-公开
标题翻译：选择性掺杂材料
公开(公告)号：US20080038524A1
公开(公告)日：2008-02-14
申请号：US11597357
申请日：2005-06-23
申请人： Markku Rajala , Matti Putkonen , Joe Pimenoff , Lauri Niinisto , Jani Paivasaari , Jouko Kurki
发明人： Markku Rajala , Matti Putkonen , Joe Pimenoff , Lauri Niinisto , Jani Paivasaari , Jouko Kurki
IPC分类号： B05D3/06 , B05C19/00 , C03C11/00
CPC分类号： C03C23/0005 , C03B37/01838 , C03B37/01853 , C03B2201/10 , C03B2201/12 , C03B2201/28 , C03B2201/30 , C03B2201/31 , C03B2201/32 , C03B2201/34 , C03C21/00 , C03C21/007 , C23C16/0263 , C23C16/40 , C23C16/45553 , C30B25/02 , C30B31/08 , C30B31/16 , Y10T428/24802 , Y10T428/24926
摘要： The invention relates to a method of selective doping of a material by a) radiating a predetermined pre-treated pattern/region into the material, b) treating the material for producing reactive groups in the pre-treated pattern/region, and c) doping the material by the atomic layer deposition method for producing a pattern/region doped with a dopant in the material. The invention further relates to a selectively doped material, a system for preparing a selectively doped material, and use of said method.
摘要翻译：本发明涉及通过以下方法选择性掺杂材料：a）将预定的预处理图案/区域辐射到材料中，b）处理该材料以在预处理图案/区域中产生反应性基团，以及c）掺杂该材料通过用于在材料中产生掺杂有掺杂剂的图案/区域的原子层沉积方法。本发明还涉及选择性掺杂材料，用于制备选择性掺杂材料的系统以及所述方法的使用。

75. 发明授权

US06548899B2 Method of processing films prior to chemical vapor deposition using electron beam processing 失效
标题翻译：使用电子束处理在化学气相沉积之前处理膜的方法
公开(公告)号：US06548899B2
公开(公告)日：2003-04-15
申请号：US09729004
申请日：2000-12-04
申请人： Matthew Ross
发明人： Matthew Ross
IPC分类号： H01L2348
CPC分类号： H01L21/02126 , C23C16/0209 , C23C16/0263 , C23C16/0272 , H01L21/02118 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/02282 , H01L21/02351 , H01L21/3145 , H01L21/31612 , H01L21/3185 , H01L21/76801 , H01L21/76825 , H01L21/76829 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A treated substrate produced by a process for treating a dielectric layer on a substrate, which comprises applying a sufficient amount of a liquid dielectric composition onto an upper surface of a semiconductor substrate to thereby form a dielectric layer on the upper surface of the substrate, the dielectric layer having a thickness of from about 2,000 to about 50,000 angstroms; heating a surface of the dielectric layer and exposing the dielectric layer to an electron beam radiation, in which the electron beam radiation is concentrated at a distance within about 1,000 angstroms from the surface of the dielectric layer, under vacuum conditions to remove substantially all moisture and/or contaminants from the surface of the dielectric layer at a depth of up to about 1,000 angstroms from the surface of the dielectric layer; and chemical vapor depositing a chemical vapor deposit material onto the surface of the treated dielectric layer while maintaining the vacuum conditions.
摘要翻译：一种经处理的基板，其通过在基板上处理电介质层的方法制造，该方法包括将足够量的液体电介质组合物施加到半导体基板的上表面上，从而在基板的上表面上形成电介质层，介电层的厚度为约2000至约50,000埃; 加热电介质层的表面并将电介质层暴露于电子束辐射，其中电子束辐射在真空条件下在真空条件下集中在距离电介质层表面约1000埃的距离处以除去基本上所有的水分和 /或介质层表面的深度高达约1000埃的介质层表面的污染物; 以及化学气相沉积化学气相沉积材料到处理的介电层的表面上，同时保持真空条件。

76. 发明授权

US5935323A Articles with diamond coating formed thereon by vapor-phase synthesis 失效
标题翻译：通过气相合成在其上形成金刚石涂层的制品
公开(公告)号：US5935323A
公开(公告)日：1999-08-10
申请号：US945212
申请日：1998-03-20
申请人： Michifumi Tanga , Takahiro Kitagawa
发明人： Michifumi Tanga , Takahiro Kitagawa
IPC分类号： C23C16/02 , C23C16/26 , C23C16/27 , C30B29/04
CPC分类号： C23C16/0263 , C23C16/0254 , C23C16/26 , C23C16/27
摘要： Articles with a tenaciously adherent diamond coating are made by forming a diamond coating on a base material by vapor-phase synthesis without causing any warpage of the coating. The diamond coating layer is formed on the surface of a base material having a number of pores formed by electric discharge or laser beams and having a depth of 0.0001-0.2 mm and a diameter of 0.001-0.02 mm. The pores may be connected to one another to form a groove. Suitable examples of the base material include molybdenum, tungsten, silicon, tungsten carbide, silicon carbide, silicon nitride, and cemented carbide mainly comprising tungsten carbide and cobalt and/or nickel.
摘要翻译： PCT No.PCT / JP96 / 01052 Sec。 371日期：1998年3月20日 102（e）1998年3月20日PCT PCT 1996年4月18日PCT公布。公开号WO96 / 34131 日期1996年10月31日具有强力粘附金刚石涂层的文章通过气相合成在基材上形成金刚石涂层而不会引起涂层翘曲而制成。金刚石涂层形成在具有多个由放电或激光束形成的孔的基材的表面上，其深度为0.0001-0.2mm，直径为0.001-0.02mm。孔可以彼此连接以形成凹槽。基材的合适实例包括钼，钨，硅，碳化钨，碳化硅，氮化硅和主要包含碳化钨和钴和/或镍的硬质合金。

77. 发明授权

US5855641A Mold for molding optical element 失效
标题翻译：用于模制光学元件的模具
公开(公告)号：US5855641A
公开(公告)日：1999-01-05
申请号：US739928
申请日：1996-10-30
申请人： Yasushi Taniguchi
发明人： Yasushi Taniguchi
IPC分类号： C03B11/00 , C03B11/08 , C23C16/02 , C23C16/26 , B29C33/56 , C03B40/00
CPC分类号： C03B11/086 , C23C16/0245 , C23C16/0263 , C23C16/26 , C03B2215/24 , Y02P40/57 , Y10S425/808
摘要： Molds for press molding an optical element of glass are disclosed. Proposed are: (1) A mold contains oxygen at the interface between a mold base of the mold and a carbon film formed at least on the molding surface of the mold base with an oxygen amount of 0-10 atom % and with the interface of a width of 0-500 .ANG., (2) a mold subjected to carbon ion injection at least on the molding surface of the mold base, and (3) a mold subjected to ion injection during or after formation of a carbon film at least on the molding surface of the mold base material.
摘要翻译：公开了用于压制玻璃的光学元件的模具。提出：（1）模具在模具的模具底座与至少在模具底座的模制表面上形成的碳膜之间的界面处含氧，氧量为0-10原子％，并且与宽度为0-500安培，（2）至少在模具底座的模制表面上进行碳离子注入的模具，和（3）至少在形成碳膜之前或之后进行离子注入的模具模具基材的成型表面。

78. 发明授权

US5082359A Diamond films and method of growing diamond films on nondiamond substrates 失效
标题翻译：金刚石薄膜和在非金刚石基底上生长金刚石薄膜的方法
公开(公告)号：US5082359A
公开(公告)日：1992-01-21
申请号：US442121
申请日：1989-11-28
申请人： Allen R. Kirkpatrick
发明人： Allen R. Kirkpatrick
IPC分类号： C23C16/02 , C23C16/27 , C30B25/02 , C30B25/18 , G02B1/10
CPC分类号： G02B1/105 , C23C16/0227 , C23C16/0263 , C23C16/0272 , C23C16/271 , C30B25/02 , C30B25/18 , C30B29/04 , Y10T428/30
摘要： A method of forming a polycrystalline film, such as a diamond, on a foreign substrate involves preparing the substrate before film deposition to define discrete nucleation sites. The substrate is prepared for film deposition by forming a pattern of irregularities in the surface thereof. The irregularities, typically craters, are arranged in a predetermined pattern which corresponds to that desired for the location of film crystals. The craters preferrably are of uniform, predetermined dimensions (in the sub-micron and micron size range) and are uniformly spaced apart by a predetermined distance. The craters may be formed by a number of techniques, including focused ion beam milling, laser vaporization, and chemical or plasma etching using a patterned photoresist. Once the substrate has been prepared the film may be deposited by a number of known techniques. Films prepared by this method are characterized by a regular surface pattern of crystals which may be arranged in virtually any desired pattern. Diamond film materials made by this technique may be used in many electrical, optical, thermal and other applications.
摘要翻译：在异物基底上形成诸如金刚石的多晶膜的方法包括在膜沉积之前制备基底以限定离散的成核位点。通过在其表面上形成不规则图案来制备用于膜沉积的衬底。不规则形状（通常为凹坑）以与薄膜晶体的位置所期望的对应的预定图案排列。凹坑优选地具有均匀的预定尺寸（亚微米和微米尺寸范围），并且均匀间隔开预定距离。凹坑可以通过许多技术形成，包括聚焦离子束研磨，激光蒸发和使用图案化的光致抗蚀剂的化学或等离子体蚀刻。一旦制备了基底，可以通过多种已知技术沉积该膜。通过该方法制备的膜的特征在于可以以几乎任何所需图案布置的规则的晶体表面图案。通过该技术制造的金刚石膜材料可用于许多电气，光学，热学和其他应用中。

79. 发明申请

US20180141130A1 MACHINING TOOL 审中-公开
公开(公告)号：US20180141130A1
公开(公告)日：2018-05-24
申请号：US15807770
申请日：2017-11-09
申请人： GUEHRING KG
发明人： Stefan SATTEL , Immo Garrn , Manfred Schwenck
IPC分类号： B23B27/14 , C23C14/48 , C23C14/06
CPC分类号： B23B27/148 , B23B2200/3627 , C23C14/0641 , C23C14/48 , C23C16/0263 , C23C16/27
摘要： The invention relates to a machining tool comprising a substrate surface made of a hard metal or a ceramic material; the substrate surface contains carbide-based and/or nitride-based and/or oxide-based hard particles embedded in a cobalt-containing binder matrix, and the substrate surface contains additional atoms implanted using ion beams of at least one species of cations.

80. 发明授权

US09966250B2 Method to transfer two dimensional film grown on metal-coated wafer to the wafer itself in a face-to-face manner 有权
公开(公告)号：US09966250B2
公开(公告)日：2018-05-08
申请号：US15608525
申请日：2017-05-30
申请人： National University of Singapore
发明人： Kian Ping Loh , Libo Gao , Antonio Helio Castro Neto
IPC分类号： H01L21/02 , C30B23/02 , C30B29/26 , H01L39/24 , C30B29/22 , H01L21/3205
CPC分类号： H01L21/02107 , C01B32/186 , C01B32/194 , C23C16/01 , C23C16/0263 , C23C16/0281 , C23C16/26 , C30B23/02 , C30B29/225 , C30B29/26 , H01L21/02002 , H01L21/02326 , H01L21/02381 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02527 , H01L21/02568 , H01L21/0262 , H01L21/02658 , H01L21/02664 , H01L21/02694 , H01L21/3205 , H01L29/1606 , H01L29/78684 , H01L39/2422
摘要： A method of in-situ transfer during fabrication of a component comprising a 2-dimensional crystalline thin film on a substrate is disclosed. In one embodiment, the method includes forming a layered structure comprising a polymer, a 2-dimensional crystalline thin film, a metal catalyst, and a substrate. The metal catalyst, being a growth medium for the two-dimensional crystalline thin film, is etched and removed by infiltrating liquid to enable the in-situ transfer of the two-dimensional crystalline thin film directly onto the underlying substrate.

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