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71. 发明公开

EP2823083A1 METHODS FOR MAKING SILICON CONTAINING FILMS ON THIN FILM TRANSISTOR DEVICES 审中-公开
标题翻译：用于生产硅薄膜含薄膜晶体管上DEVICES
公开(公告)号：EP2823083A1
公开(公告)日：2015-01-14
申请号：EP13711521.8
申请日：2013-03-08
申请人： Air Products and Chemicals, Inc.
发明人： MALLIKARJUNAN, Anupama , JOHNSON, Andrew David , WANG, Meiliang , VRTIS, Raymond Nicholas , HAN, Bing , LEI, Xinjian , O'NEILL, Mark Leonard
IPC分类号： C23C16/40 , C23C16/505 , H01L29/786
CPC分类号： H01L21/02164 , C23C16/402 , C23C16/505 , H01L21/02208 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/443 , H01L29/4908 , H01L29/51 , H01L29/7869
摘要： Described herein are low temperature processed high quality silicon containing films. Also disclosed are methods of forming silicon containing films at low temperatures. In one aspect, there are provided silicon-containing film having a thickness of about 2 nm to about 200nm and a density of about 2.2g/cm
3 or greater wherein the silicon-containing thin film is deposited by a deposition process selected from a group consisting of chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition (PECCVD, atomic layer deposition (ALD), and plasma enhanced atomic layer deposition (PEALD), and the vapor deposition is conducted at one or more temperatures ranging from about 25°C to about 400°C using an alkylsilane precursor selected from the group consisting of diethylsilane, triethylsilane, and combinations thereof.

72. 发明公开

EP2447303A4 PRODUCT OF POLYSILOXANE CONDENSATION 审中-公开
标题翻译：聚硅氧烷的凝聚产物
公开(公告)号：EP2447303A4
公开(公告)日：2012-10-10
申请号：EP10792179
申请日：2010-06-24
申请人： ASAHI KASEI E MATERIALS CORP
发明人： MORIYAMA REIKO , SAITO HIDEO , TAKADA SYOUZOU , DOI ICHIROU
IPC分类号： C08G77/44 , C08L83/04 , C09D183/10 , H01L21/312 , H01L21/76
CPC分类号： C08L83/04 , C08G77/02 , C08G77/04 , C08K3/36 , C08K2201/016 , H01L21/02123 , H01L21/02208 , H01L21/02282 , H01L21/3121 , H01L51/448 , Y10T428/31663 , C08L83/00
摘要： Provided is a condensation reaction product solution which is particularly suitable for filling a trench formed on a substrate having a narrow width and a high aspect ratio. The condensation reaction product solution has a long pot life, superior trench-filling when used for trench-filling, and a low cure shrinkage, an excellent crack resistance and a HF resistance when cured and converted into silicon oxide. The condensation reaction product solution comprises (I) a condensation reaction product obtained by condensation reaction from a condensation component comprising (i) 40% by mass or more and 99% by mass or less in equivalent of condensate of polysiloxane compound derived from silane compounds represented by the general formula (1) : R 1 n SiX 1 4-n (wherein n is an integer of 0 to 3, R 1 is hydrogen atom or a C 1-10 hydrocarbon group, and X 1 is a halogen atom, a C 1-6 alkoxy group or acetoxy group) and (ii) 1% by mass or more and 60% by mass or less of silica particles, and (II) a solvent, wherein the silane compounds represented by the general formula (1) are two or more types of silane compounds comprising a tetrafunctional silane compound which corresponds to the case of n = 0 in the general formula (1) and a trifunctional silane compound which corresponds to the case of n = 1 in the general formula (1).
摘要翻译：提供了一种缩合反应产物溶液，其特别适于填充形成在具有窄宽度和高纵横比的基底上的沟槽。缩合反应产物溶液具有长的适用期，用于沟槽填充时具有优异的沟槽填充性，并且固化和转化为氧化硅时具有低固化收缩率，优异的抗裂性和耐HF性。缩合反应产物溶液包含（I）缩合反应产物，该缩合反应产物由缩合组分缩合反应得到，该缩合反应产物包含（i）40质量％以上且99质量％以下，相当于来源于硅烷化合物的聚硅氧烷化合物的缩合物通式（1）表示：R 1 n SiX 1 4-n（n为0〜3的整数，R 1为氢原子或C 1-10烃基，X 1为卤素原子， C 1-6烷氧基或乙酰氧基）和（ii）1质量％以上且60质量％以下的二氧化硅粒子，和（II）溶剂，其中由通式（1）表示的硅烷化合物是通式（1）中与n = 0的情况相对应的四官能性硅烷化合物和通式（1）中n = 1的情况下的三官能性硅烷化合物的两种以上的硅烷化合物，。

73. 发明授权

EP1383163B1 Methods for forming silicon dioxide layers on substrates using atomic layer deposition 有权
标题翻译：一种通过原子层沉积形成的二氧化硅的过程
公开(公告)号：EP1383163B1
公开(公告)日：2012-03-28
申请号：EP03253968.6
申请日：2003-06-24
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Lee, Joo-won , Chu, Kang-soo , Park, Jae-eun , Yang, Jong-ho
IPC分类号： H01L21/316 , C23C16/40 , C23C16/02
CPC分类号： H01L21/31612 , C23C16/402 , C23C16/45534 , C23C16/56 , H01L21/02164 , H01L21/02208 , H01L21/02277 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/3122 , H01L21/3141

74. 发明公开

EP1962336A2 Insulating film material , multilayer interconnection structure, method for manufacturing the same and method for manufacturing semiconductor device 有权
标题翻译：绝缘片材料和在方法中的用途的绝缘膜材料的用于生产半导体器件
公开(公告)号：EP1962336A2
公开(公告)日：2008-08-27
申请号：EP08100966.4
申请日：2008-01-27
申请人： Fujitsu Ltd.
发明人： Kobayashi, Yasushi, c/o Fujuitsu Limited , Nakata, Yoshihiro, c/o Fujitsu Limited , Ozaki, Shirou, c/o Fujitsu Limited
IPC分类号： H01L21/312 , H01L21/768
CPC分类号： H01L21/31695 , C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02282 , H01L21/3122 , H01L21/76801 , H01L21/76807 , H01L21/76829 , H01L21/76834 , H01L2924/0002 , C08L2666/54 , H01L2924/00
摘要： To provide an insulating film material that can be advantageously used for forming an insulating film having a low dielectric constant and excellent resistance to damage, such as etching resistance and resistance to liquid reagents, a multilayer interconnection structure in which a parasitic capacitance between the interconnections can be reduced, efficient methods for manufacturing the multilayer interconnection structure, and an efficient method for manufacturing a semiconductor device with a high speed and reliability. The insulating film material contains at least a silicon compound having a steric structure represented by Structural Formula (1) below.

where, R 1 , R 2 , R 3 , and R 4 may be the same or different and at least one of them represents a functional group containing any of a hydrocarbon and an unsaturated hydrocarbon.
摘要翻译：要在绝缘膜材料提供并可以有利地用于绝缘的低介电常数和优异的耐损伤具有薄膜，颜色的形成：诸如耐蚀刻性和耐液体试剂，多层互连结构，其中互连之间的寄生电容可以被减小，用于制造多层互连结构的有效方法，以及为制造半导体器件具有高的速度和可靠性有效的方法。绝缘膜材料至少含有具有由结构式表示的立体结构的硅化合物（1）的下方。其中，R 1，R 2，R 3，和R 4可以相同或不同，并且它们中的至少一个含darstellt任何的烃和烃的不饱和的官能团。

75. 发明公开

EP1195451A1 Method of decreasing the dielectric constant in a SiOC layer 有权
标题翻译：在einer SiOC Schicht的Verfahren zur Reduzierung derDielektrizitätskonstante
公开(公告)号：EP1195451A1
公开(公告)日：2002-04-10
申请号：EP01120595.2
申请日：2001-08-29
申请人： Applied Materials, Inc.
发明人： Gaillard, Frédéric , Lim, Tian-Hoe , Yieh, Ellie , Lu, Yung-Cheng , Yau, Wai-Fan , Liu, Kuo-Wei , Jeng, Shin-Puu , Xia, Li-Qun
IPC分类号： C23C16/40 , H01L21/316
CPC分类号： H01L21/76834 , C23C16/401 , H01L21/02126 , H01L21/02208 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/314 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/7681 , H01L21/76814 , H01L21/76828
摘要： A method for processing a substrate comprising depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.
摘要翻译：一种用于处理衬底的方法，包括通过化学气相沉积在衬底上沉积包含硅，氧和碳的电介质层，其中介电层具有至少1原子量的碳含量和小于约的介电常数并且在电介质层上沉积含硅和碳的层。通过烷基硅烷在相对惰性气体的等离子体中的反应进一步沉积非晶氢化碳化硅层，通过具有三个或更多个甲基的有机硅化合物的反应沉积的电介质层的介电常数显着降低。

76. 发明公开

EP1059664A3 Method of depositing and etching dielectric layers 审中-公开
标题翻译：一种用于电介质层的沉积和蚀刻工艺
公开(公告)号：EP1059664A3
公开(公告)日：2001-10-10
申请号：EP00112300.9
申请日：2000-06-08
申请人： Applied Materials, Inc.
发明人： Bjorkman, Claes H. , Min, Yu Melissa , Shan, Hongqing , Cheung, David W. , Yau, Wai-fan , Chopra, Nasreen Gazala , Yin, Gerald Zheyao , Moghadam, Farhad , Huang, Judy H. , Yost, Dennis J. , Tang, Sum-Yee Betty , Kim, Yunsang , Liu, Kuo-Wei
IPC分类号： H01L21/312 , H01L21/311 , H01L21/762 , H01L21/768
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/31116 , H01L21/31138 , H01L21/3121 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L21/76829
摘要： A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

77. 发明公开

EP1077274A1 Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes 审中-公开
标题翻译：一种用于薄层的沉积过程中，特别是与低k电介质的
公开(公告)号：EP1077274A1
公开(公告)日：2001-02-21
申请号：EP99402073.3
申请日：1999-08-17
申请人： Applied Materials, Inc.
发明人： Pokhama, Himansu , Xia, Li-Qun , Lim, Tian-Hoe
IPC分类号： C23C16/44 , H01L21/316 , C23C16/40
CPC分类号： C23C16/45572 , C23C16/401 , C23C16/4411 , C23C16/455 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02208 , H01L21/02211 , H01L21/02271 , H01L21/02274 , H01L21/02312 , H01L21/02337 , H01L21/0234 , H01L21/02362 , H01L21/31612 , H01L21/31633
摘要： An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.
摘要翻译：用于沉积薄膜的设备和方法。该装置基因集会包括具有一个或多个壁和一盖和两个热交换器的处理腔室。第一热交换器耦接至所述壁和第二热交换器耦接至所述盖。两个热交换器被配置为提供的壁和盖的单独的温度控制。盖子和壁温度的单独的控制抑制有机硅烷的反应的盖内，同时优化所述室内的反应。的装置实现，其中，方法的工艺气体包含臭氧和有机硅烷到通过允许进入一个处理，同时一个基片被加热以形成在所述衬底掺杂碳的氧化硅层。在沉积期间，盖被保持比壁冷却器。

78. 发明公开

EP1055012A2 PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS 有权
标题翻译：具有低介电常数介质薄膜等离子体分离过程
公开(公告)号：EP1055012A2
公开(公告)日：2000-11-29
申请号：EP99906897.6
申请日：1999-02-10
申请人： Applied Materials, Inc.
发明人： CHEUNG, David , YAU, Wai-Fan , MANDAL, Robert, P. , JENG, Shin-Puu , LIU, Kuo-Wei , LU, Yung-Cheng , BARNES, Mike , WILLECKE, Ralf, B. , MOGHADAM, Farhad , ISHIKAWA, Tetsuya , POON, Tze
IPC分类号： C23C4/00
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2-SiH-O-SiH-(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10 % to 30 % of the duty cycle.

79. 发明公开

EP3051576A1 METHOD OF PROCESSING A TARGET OBJECT COMPRISING FORMING A SILICON OXIDE FILM 审中-公开
标题翻译：用于处理的目标方法指向综合矿床由氧化硅膜
公开(公告)号：EP3051576A1
公开(公告)日：2016-08-03
申请号：EP16153395.5
申请日：2016-01-29
申请人： TOKYO ELECTRON LIMITED
发明人： Kihara, Yoshihide , Hisamatsu, Toru , Oishi, Tomoyuki , Honda, Masanobu
IPC分类号： H01L21/02 , H01L21/033
CPC分类号： H01L21/31144 , H01L21/02164 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/0276 , H01L21/0337 , H01L21/31116 , H01L21/31138
摘要： Non-uniformity in a thickness of a silicon oxide film formed on a processing target object can be reduced even when an aspect ratio of an opening of a mask is increased. A silicon oxide film is formed by repeating a sequence including: (a) a first process of forming a reactant precursor on the processing target object by generating plasma of a first gas containing a silicon halide gas within a processing vessel of a plasma processing apparatus; (b) a second process of generating plasma of a rare gas within the processing vessel after the first process; (c) a third process of forming a silicon oxide film by generating plasma of a second gas containing an oxygen gas within the processing vessel after the second process; and (d) a fourth process of generating plasma of a rare gas within the processing vessel after the third process.
摘要翻译：在一定厚度的氧化硅的处理对象物上成膜的非均匀性可以甚至当掩模的开口的纵横比的增加被降低。的氧化硅膜，是通过重复的序列，包括形成：（a）以产生含有一个等离子体处理装置的处理容器内的卤化硅气体的第一气体的等离子形成的处理对象物上的反应物前体的第1工序; （B）所述第一处理后的处理容器内产生的稀有气体的等离子体的第二工序; （C）通过产生第二气体的第二处理后的处理容器内含有氧气气体的等离子体形成的氧化硅膜的第3工序; 及（d）所述第三工序后生成所述处理容器内的稀有气体的等离子体的第四过程。

80. 发明授权

EP1055012B1 PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS 有权
标题翻译：具有低介电常数介质薄膜等离子体分离过程
公开(公告)号：EP1055012B1
公开(公告)日：2006-02-08
申请号：EP99906897.6
申请日：1999-02-10
申请人： APPLIED MATERIALS, INC.
发明人： CHEUNG, David , YAU, Wai-Fan , MANDAL, Robert, P. , JENG, Shin-Puu , LIU, Kuo-Wei , LU, Yung-Cheng , BARNES, Mike , WILLECKE, Ralf, B. , MOGHADAM, Farhad , ISHIKAWA, Tetsuya , POON, Tze
IPC分类号： H01L21/316 , C23C16/40 , H01L21/768
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2-SiH-O-SiH-(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10 % to 30 % of the duty cycle.

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