专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明专利

JPS63190183A VACUUM CHEMICAL REACTOR 失效
公开(公告)号：JPS63190183A
公开(公告)日：1988-08-05
申请号：JP1972487
申请日：1987-01-30
申请人： ANELVA CORP
发明人： ASAMAKI TATSUO
IPC分类号： C23C8/04 , C23C8/08 , C23C8/10 , C23C8/24 , C23C16/04 , C23C16/12 , C23C16/46 , C23C16/48 , C23F4/00
摘要： PURPOSE:To perform partial reforming treatment with good efficiency of electric power by selecting microwave liable to be absorbed to the part necessitating reforming in case of placing a substrate to be treated in a vacuum vessel and heating it with microwave irradiation while introducing reactive gas and subjecting the necessary part of the substrate to reforming treatment. CONSTITUTION:A substrate 31 to be treated is fitted on the window 51 made of quartz which is provided to an electromagnetic wave irradiating means 50 for microwave in the vacuum chamber 11 of a vacuum vessel 10. A gaseous raw material of a film formed on the surface of the substrate 31 is blown thereon uniformly and parallel as shown in arrows 44 from a cylinder 43. Then microwave having frequency sufficiently absorbed by the substrate 31 is applied from the oscillator 55 of the irradiating means 50 and only the substrate is selectively heated and raised in temp. and allowed to react with the introduced gaseous raw material and the film of the product resulting from the decomposition of the reactive gas is formed on the substrate 31. Further treatment such as etching excepting film formation is performed under excellent efficiency of electric power.

72. 发明专利

JPS63179078A FORMATION OF THIN FILM 失效
公开(公告)号：JPS63179078A
公开(公告)日：1988-07-23
申请号：JP1053487
申请日：1987-01-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： AKIYAMA KOJI , TAKIMOTO AKIO , TANAKA EIICHIRO , WATANABE MASANORI
IPC分类号： B01J19/08 , C23C16/12 , C23C16/14 , C23C16/18 , C23C16/24 , C23C16/26 , C23C16/30 , C23C16/32 , C23C16/34 , C23C16/50 , C23C16/511 , C30B25/02
摘要： PURPOSE:To form sharp substrate-film interface and to reduce unevenness of the characteristics of devices by applying a magnetic field to plasma to cause electron cyclotron resonance in the plasma, introducing the plasma into a film forming chamber and bringing it into contact with gaseous starting materials to form a thin film. CONSTITUTION:A vacuum vessel is divided into a film forming chamber 1 and a plasma generating chamber 4. A plasma generating gas is introduced into the chamber 4 and microwave power is impressed to generate plasma. A magnetic field is applied to the plasma to cause electron cyclotron resonance in the plasma and this plasma is introduced into the chamber 1 and brought into contact with gaseous starting materials introduced into the chamber 1. A thin film is formed on a substrate 2 under conditions so controlled that negative DC voltage generated in the substrate 2 kicks off at >=0.1V/sec velocity.

73. 发明专利

JPS63176476A FORMATION OF THIN FILM OR WORKING 失效
公开(公告)号：JPS63176476A
公开(公告)日：1988-07-20
申请号：JP480987
申请日：1987-01-14
申请人： HITACHI LTD
发明人： YOKOYAMA NATSUKI , HONMA YOSHIO , MUKAI KIICHIRO
IPC分类号： H01L21/285 , C23C16/12 , C23C16/14 , C23C16/20 , C23C16/46 , H01L21/205
摘要： PURPOSE:To carry out the formation of a high quality thin film or the accurate working of a sample by a chemical reaction with high reproducibility by heating the sample and a sample stand to a desired temp. at the outside of a reaction chamber and placing them in the chamber. CONSTITUTION:A sample 106 is put on a sample stand 107 in a sample temp. setting chamber 101 and a halogen lamp 104 or the like is switched on to heat the surface of the sample 106 and the stand 107 to a desired temp. A shut-off valve 103 is opened and a sample transferring rod 105 is moved forward to transfer and put the sample 106 together with the stand 107 on a support 112 in a reaction chamber 102. The rod 105 is then moved backward and the valve 103 is shut. After the chamber 102 is evacuated, gaseous starting materials for a thin film are introduced from the gas introducing hole 111. The temp. of the surface of the sample 106 lowers slightly but a thin film is formed on the surface of the sample 106 by CVD. By this method, the formation of a high quality thin film or the accurate working of the sample can be carried out by a chemical reaction with high reproducibility.

74. 发明专利

JPS62238368A THIN FILM FORMING DEVICE 失效
公开(公告)号：JPS62238368A
公开(公告)日：1987-10-19
申请号：JP7911286
申请日：1986-04-08
申请人： TOSHIBA CORP
发明人： ITO HITOSHI
IPC分类号： H01L21/205 , C23C16/08 , C23C16/12 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/31
摘要： PURPOSE:To form a highly reliable thin film by providing a gas outlet to a supporting part loaded with a substrate to be treated on the surface of which the thin film is formed in a reaction furnace, and removing a gas hindering the film formation. CONSTITUTION:A cantilever 4 loaded with a boat 5 packed with many substrates 14 is transferred into the reaction furnace 1, the boat 5 is placed on supporting rods 3a and 3b, and the cantilever 4 is taken out to the outside of the furnace. The reaction furnace 1 is evacuated, and the reaction furnace 1 is heated to a specified temp. by a three-zone heater 2. Subsequently, flow- controlled WF6 and H2, for example, are introduced from a gas chamber 17, and a W thin film is deposited on the substrate 14. At this time, the unreacted material of WF6 hindering the selectivity of the thin film and H2 and the by- product of HF are discharged from the outlet 13 of the boat supporting rods 3a and 3b close to the substrate 14 through an exhaust line 9. As a result, the effect of the hindering gases is controlled, and a highly reliable thin film is formed.

75. 发明专利

JPS61272379A CVD METHOD FOR ALUMINUM 失效
公开(公告)号：JPS61272379A
公开(公告)日：1986-12-02
申请号：JP11503085
申请日：1985-05-27
申请人： FUJITSU LTD
发明人： OBA TAKAYUKI
IPC分类号： C23C16/12 , C23F4/00 , H01L21/28 , H01L21/285 , H01L21/3205
摘要： PURPOSE:To enable high quality Al wiring by previously subjecting the surface of a substrate to plasma etching in an NF3 atmosphere so as to increase the rate of growth of Al by a CVD method an to enhance the adhesion. CONSTITUTION:A substrate 13 is placed on one of electrodes 12 in a plasma CVD apparatus 11, NF314 is introduced into the apparatus 11 from the feed port 15 through a shower and plasma is generated under proper conditions to subject the surface of the substrate to plasma etching. After the etching is finished, the remaining NF3 in the apparatus 11 is perfectly exhausted from the exhaust port 17, the interior of the apparatus 11 is purged with hydrogen, and TIB bubbled with He is introduced into the apparatus 11 together with hydrogen to grow Al on the surface of the substrate 13 by a CVD method.

76. 发明专利

JPS57158370A FORMATION OF METALLIC THIN FILM 失效
公开(公告)号：JPS57158370A
公开(公告)日：1982-09-30
申请号：JP4220981
申请日：1981-03-23
申请人： FUJITSU LTD
发明人： ITOU TAKASHI
IPC分类号： C23C16/12 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768
摘要： PURPOSE:To form a uniform thin Al film on a substrate with a large step by reacting AlX3 (X is halogen) with Al under reduced pressure to form AlX, decomposing the AlX into AlX3 and Al, and depositing the Al on the substrate. CONSTITUTION:H2 as a carrier gas is fed to an AlX3 container 48, mixed with AlX3 vapor, and introduced into a quarts reaction tube 43. In the tube 43 under reduced pressure, the AlX3 vapor heated with an electric furnace 41 reacts with molten Al 46 almost thoroughly, forming AlX. The AlX is carried toward a low temp. electric furnace 42 and dissociated on an Si wafer 47 to release AlX3 and to deposit a thin Al film. By this method the thin Al film 24 having no directional properties is deposited on the wafer 47. Accordingly, a uniform thin Al film can be formed even on a substrate with a large step without causing breaking.

77. 发明专利

JP6276849B2 無線周波に透過な窓有权
公开(公告)号：JP6276849B2
公开(公告)日：2018-02-07
申请号：JP2016518358
申请日：2014-05-30
申请人：アップルインコーポレイテッド
发明人：ミスラ, アビジート , トライオン, ブライアンエス. , クーマン, チャールズジェイ. , リンチ, スティーブンビー. , ライト, ジェームズエー.
IPC分类号： C23C14/14 , C23C16/12 , H05K5/04
CPC分类号： H01Q1/42 , H01Q1/243 , H01Q1/44

79. 发明专利

JP5808799B2 プラチナおよびニッケル層の進歩的な付着によって表面をアルミナイズする方法有权
标题翻译：如何通过渗铝铂和镍层的沉积渐进表面
公开(公告)号：JP5808799B2
公开(公告)日：2015-11-10
申请号：JP2013514760
申请日：2011-06-10
申请人：スネクマ
发明人：ラグランジユ,フレデリツク , マネツセ,ドウニ
IPC分类号： F01D25/00 , F02C7/00 , F01D5/28 , C23C16/12 , C23C16/20 , C25D5/12 , C25D5/50 , C23C28/02
CPC分类号： B05D1/36 , C23C10/28 , C23C16/0281 , C23C16/06 , C23C28/023 , C25D3/12 , C25D5/12 , C25D5/40 , Y02T50/67

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式