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    • 82. 发明申请
    • MAGNETIC RESONANCE IMAGING LOCAL COIL COMPOSED OF SEPARATE PARTS
    • 磁共振成像局部线圈组成的单独部件
    • US20090189610A1
    • 2009-07-30
    • US12361716
    • 2009-01-29
    • Jian Zhong LiYan Hong Chen
    • Jian Zhong LiYan Hong Chen
    • G01R33/34
    • G01R33/34046G01R33/34084G01R33/3415
    • A separate type coil for a magnetic resonance imaging system has a first partial coil in a first partial casing and a second partial coil in a second partial casing, the first and second partial coils being connected to a connector for connection to the imaging system via a first cable and a second cable, respectively. The coil also has a coupler having a first part and a second part that are coupled to each other. The first part of the coupler is disposed in the first partial casing and is connected to the first partial coil, the second part of the coupler is disposed in the second partial casing The first cable is disposed in the second partial casing, and the second part of the coupler is connected to the connector for connection to the imaging system via the first cable. This separate type coil couples and connects the signals in the first partial coil to the cable and the connector via the coupler, so as to ensure the reliability of the electrical connections.
    • 用于磁共振成像系统的单独类型的线圈具有第一部分壳体中的第一部分线圈和第二部分壳体中的第二部分线圈,所述第一和第二部分线圈连接到连接器,用于经由 第一根电缆和第二根电缆。 线圈还具有耦合器,其具有彼此耦合的第一部分和第二部分。 耦合器的第一部分设置在第一部分壳体中并连接到第一部分线圈,耦合器的第二部分设置在第二部分壳体中。第一电缆设置在第二部分壳体中,第二部分 耦合器连接到连接器,以经由第一电缆连接到成像系统。 该分离型线圈通过耦合器将第一部分线圈中的信号耦合并连接到电缆和连接器,以确保电连接的可靠性。
    • 83. 发明申请
    • Data management method for logical volume manager
    • 逻辑卷管理器的数据管理方法
    • US20090138530A1
    • 2009-05-28
    • US11984965
    • 2007-11-26
    • Hai-Ting YaoJian-Zhong WangTom ChenWin-Harn Liu
    • Hai-Ting YaoJian-Zhong WangTom ChenWin-Harn Liu
    • G06F12/00
    • G06F12/122G06F3/0605G06F3/0647G06F3/0683
    • A data management method for logical volume manager (LVM), called LVM includes a first type of physical volume and a second type of physical volume. Access speed of the first type of physical volume is higher than that of the second type of physical volume. Each physical volume has a plurality of physical extents, and a data storage method includes the following steps. Obtaining access frequencies of all the physical extents in statistics; performing a data migration operation, migrating and saving data in the physical extents satisfying an access frequency threshold value in the second type of physical volume to the physical extents without any data in the first type of physical volume; and rewriting a corresponding physical extent number for the migrated data.
    • 称为LVM的逻辑卷管理器(LVM)的数据管理方法包括第一类物理卷和第二类物理卷。 第一类物理量的访问速度高于第二类物理卷的访问速度。 每个物理卷具有多个物理盘区,并且数据存储方法包括以下步骤。 获取统计中所有物理盘点的访问频率; 执行数据迁移操作,将满足所述第二类型物理卷中的访问频率阈值的物理范围中的数据迁移并保存到所述物理盘区,而没有所述第一类型物理卷中的任何数据; 并重写相应的迁移数据的物理盘区号。
    • 85. 发明授权
    • Schottky diode with silver layer contacting the ZnO and MgxZn1−xO films
    • 具有银层的肖特基二极管与ZnO和MgxZn1-xO膜接触
    • US07400030B2
    • 2008-07-15
    • US11042533
    • 2005-01-25
    • Yicheng LuHaifeng ShengSriram MuthukumarNuri William EmanetogluJian ZhongShaohua Liang
    • Yicheng LuHaifeng ShengSriram MuthukumarNuri William EmanetogluJian ZhongShaohua Liang
    • H01L29/04
    • H01L31/0392H01L31/022408H01L31/108H01L31/1123Y02E10/50
    • In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
    • 在本发明中,提供了半导体器件,例如在n型ZnO和Mg x 1 Zn 1-x O O外延膜上制造的肖特基UV光电探测器。 ZnO和Mg x Zn 1-x O薄膜生长在R平面蓝宝石衬底上,肖特基二极管制造在ZnO和Mg < 分别使用银和铝作为肖特基和欧姆接触金属的ZnO 1-x O O膜。 肖特基二极管具有圆形图案,其中内圆是肖特基接触,外环是欧姆接触。 Ag肖特基接触图案使用标准剥离技术制造,而Al欧姆接触图案是使用湿化学蚀刻法形成的。 与其感光对手相比,这些检测器显示低频光响应,高速光响应,较低的漏电流和低噪声性能。 本发明还可应用于光学调制器,金属半导体场效应晶体管(MESFET)等。