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    • 85. 发明授权
    • Resin composition, gate insulating layer, and organic thin film transistor
    • 树脂组合物,栅极绝缘层和有机薄膜晶体管
    • US08476621B2
    • 2013-07-02
    • US13060456
    • 2009-08-25
    • Isao Yahagi
    • Isao Yahagi
    • H01L35/24
    • C08F220/22C08F12/20C08F12/24C08F212/08C08F212/10C08F212/14C08F220/18C08F220/36C08F2220/343C08K5/0025C08L25/18C08L2205/02H01L51/052H01L51/0541H01L51/0545C08L2666/04
    • The subject of the present invention is to provide an organic thin film transistor with a small hysteresis. The means for solving the subject is a resin composition for an organic thin film transistor gate insulating layer comprising (A) a macromolecule that comprises at least one repeating unit selected from the group consisting of repeating units represented by Formula (1), repeating units represented by Formula (1′), and repeating units represented by Formula (2) and contains two or more first functional groups in its molecule, wherein the first functional group is a functional group that generates, by the action of electromagnetic waves or heat, a second functional group that reacts with active hydrogen, and (B) at least one compound selected from the group consisting of low-molecular compounds containing two or more active hydrogens in each molecule and macromolecules containing two or more active hydrogens in each molecule.
    • 本发明的主题是提供具有小滞后的有机薄膜晶体管。 用于解决问题的方法是一种有机薄膜晶体管栅极绝缘层的树脂组合物,其包含(A)大分子,其包含至少一种选自由式(1)表示的重复单元,重复单元 由式(1')表示的重复单元和式(2)表示的重复单元,其分子中含有2个以上的第一官能团,其中,第一官能团是通过电磁波或热而产生的官能团 与活性氢反应的第二官能团,和(B)选自每个分子中含有两个或更多个活性氢的低分子化合物和每个分子中含有两个或更多个活性氢的大分子的至少一种化合物。