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81. 发明申请

US20170139256A1 ARRAY SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20170139256A1
公开(公告)日：2017-05-18
申请号：US14764176
申请日：2015-05-25
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
发明人： Xiaojiang Yu , Haibo Du
IPC分类号： G02F1/1343 , G02F1/1333 , G02F1/1362 , H01L27/12 , G02F1/1368
CPC分类号： G02F1/13439 , G02F1/133345 , G02F1/13338 , G02F1/134309 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/13685 , G02F2201/121 , G02F2202/09 , H01L21/77 , H01L27/12 , H01L27/124
摘要： The present invention provides an array substrate structure and a manufacturing method thereof, in which after a common electrode (91) is formed, a reduction resistant layer (82) is first formed on the common electrode (91) before deposition of a second insulation layer (83) in order to prevent the film quality of the common electrode (91) from being affected by a reductive atmosphere generated in a process of directly depositing the second insulation layer (83) on the common electrode (91) thereby reducing the influence on the transmittal of the common electrode (91) caused by the deposition of the second insulation layer (83) on the common electrode (91) and providing the common electrode (91) with increased transmittal and enhancing displaying performance.

82. 发明授权

US09387648B2 Glass laminated articles and layered articles 有权
标题翻译：玻璃层压制品和分层物品
公开(公告)号：US09387648B2
公开(公告)日：2016-07-12
申请号：US14474820
申请日：2014-09-02
申请人： CORNING INCORPORATED
发明人： David Francis Dawson-Elli , Steven Edward DeMartino , Laura Lee Hluck
IPC分类号： B32B7/02 , B29C65/00 , G02F1/153 , B32B17/10 , B32B37/14 , B32B38/00
CPC分类号： B32B7/02 , B32B17/10036 , B32B17/10091 , B32B17/101 , B32B17/10761 , B32B37/14 , B32B38/0004 , C03C17/3668 , C03C17/3681 , C03C2201/50 , E06B3/66 , G02F1/1523 , G02F1/153 , G02F1/1533 , G02F2001/1536 , G02F2202/09 , Y10T428/2495 , Y10T428/24967 , Y10T428/26
摘要： Laminated articles and layered articles, for example, low alkali glass laminated articles and layered articles useful for, for example, electrochromic devices are described.
摘要翻译：描述了层压制品和分层制品，例如低碱玻璃层压制品和用于例如电致变色装置的分层制品。

83. 发明授权

US08488927B2 Optical component having a waveguide array heterostructure 有权
标题翻译：具有波导阵列异质结构的光学部件
公开(公告)号：US08488927B2
公开(公告)日：2013-07-16
申请号：US13120661
申请日：2009-09-25
申请人： Jean-Marie Moison , Christophe Minot
发明人： Jean-Marie Moison , Christophe Minot
IPC分类号： G02B6/42
CPC分类号： G02F1/3515 , G02F1/0316 , G02F1/035 , G02F1/225 , G02F1/3511 , G02F1/365 , G02F3/00 , G02F3/024 , G02F2001/213 , G02F2201/12 , G02F2202/09 , G02F2202/101 , G02F2202/102 , G02F2203/15 , G02F2203/48
摘要： The invention relates to an optical component including an array of coupled waveguides, wherein said waveguide array includes: a first area made of parallel waveguides coupled according to a first coupling coefficient; a second area adjacent to the first area and made of parallel waveguides coupled according to a second coupling coefficient lower than the first coupling coefficient; a third area adjacent to the second area and made of parallel waveguides coupled according to a third coupling coefficient higher than the second coupling coefficient; a fourth area adjacent to the third area and made of parallel waveguides coupled according to a fourth coupling coefficient lower than the third coupling coefficient; and a fifth area adjacent to the fourth area and made of parallel waveguides coupled according to a fifth coupling coefficient higher than the fourth coupling coefficient.
摘要翻译：本发明涉及包括耦合波导阵列的光学部件，其中所述波导阵列包括：根据第一耦合系数耦合的平行波导制成的第一区域; 第二区域，与第一区域相邻并由根据低于第一耦合系数的第二耦合系数耦合的平行波导构成; 第三区域，与所述第二区域相邻并且由根据高于所述第二耦合系数的第三耦合系数耦合的平行波导构成; 与所述第三区域相邻的第四区域，并且由根据低于所述第三耦合系数的第四耦合系数耦合的平行波导构成; 以及与第四区域相邻并由根据高于第四耦合系数的第五耦合系数耦合的平行波导制成的第五区域。

84. 发明授权

US08467635B2 Optical modulator 有权
标题翻译：光调制器
公开(公告)号：US08467635B2
公开(公告)日：2013-06-18
申请号：US13129680
申请日：2009-12-02
申请人： Yoshiyuki Doi , Takashi Yamada , Yohei Sakamaki , Akimasa Kaneko
发明人： Yoshiyuki Doi , Takashi Yamada , Yohei Sakamaki , Akimasa Kaneko
IPC分类号： G02F1/035 , G02F1/225
CPC分类号： G02F1/225 , G02F1/2257 , G02F2001/212 , G02F2001/217 , G02F2202/09 , G02F2202/20 , G02F2202/28 , G02F2203/20 , G02F2203/21
摘要： An optical modulator having a high stability is provided. In the optical modulator according to the present invention, a phase modulation by an electro-optic effect is made on an optical substrate of an electro-optic material while the setting of an operating point by a thermal-optic effect is made on a planar lightwave circuit (PLC) substrate of quartz, silicon, or the like. Such configuration can suppress the influence of thermal drift or the like because no heat is applied directly to the optical substrate of the electro-optic material. In addition, breakage and warpage of the substrate due to heat are also mitigated. Further, quartz used for the PLC has a low thermal conductivity, approximately one-fifth of that of the LN substrate (approximately 1 W/(m·K)), and therefore, a desired phase difference can be maintained with a low power consumption, and thus, the operating point becomes stabilized.
摘要翻译：提供了具有高稳定性的光调制器。在根据本发明的光调制器中，在电光材料的光学基板上进行通过电光效应的相位调制，同时通过热光学效应设置工作点在平面光波石英，硅等的电路（PLC）基板。这种构造可以抑制热漂移等的影响，因为没有热直接施加到电光材料的光学基板。此外，还减轻了由于热而引起的基板的断裂和翘曲。此外，用于PLC的石英具有低导热性，大约是LN衬底的约五分之一（约1W /（m·K）），因此可以以低功耗维持期望的相位差因此，工作点变得稳定。

85. 发明申请

US20120320448A1 CHIP-BASED FREQUENCY COMB GENERATOR WITH MICROWAVE REPETITION RATE 有权
标题翻译：具有微波重复速率的基于芯片的频率发电机
公开(公告)号：US20120320448A1
公开(公告)日：2012-12-20
申请号：US13525189
申请日：2012-06-15
申请人： Jiang LI , Hansuek LEE , Tong CHEN , Kerry VAHALA
发明人： Jiang LI , Hansuek LEE , Tong CHEN , Kerry VAHALA
IPC分类号： G02F2/02 , C03C25/68 , C03C25/22
CPC分类号： G02F1/353 , G02F1/2257 , G02F2201/063 , G02F2201/17 , G02F2201/58 , G02F2202/09 , G02F2202/105 , G02F2203/15 , G02F2203/54 , G02F2203/56 , G02F2203/69
摘要： A frequency comb generator fabricated on a chip with elimination of a disadvantageous reflow process, includes an ultra-high Q disk resonator having a waveguide that is a part of a wedge structure fabricated from a silicon dioxide layer of the chip. The disk resonator allows generation of a frequency comb with a mode spacing as low as 2.6 GHz and up to 220 GHz. A surface-loss-limited behavior of the disk resonator decouples a strong dependence of pumping threshold on repetition rate.
摘要翻译：制造在芯片上的消除不利的回流工艺的频率梳发生器包括具有作为由芯片的二氧化硅层制成的楔形结构的一部分的波导的超高Q盘谐振器。磁盘谐振器允许产生低至2.6GHz和高达220GHz的模式间隔的频率梳。盘式谐振器的表面损耗受限行为使抽水阈值对重复率的强烈依赖性解耦。

86. 发明授权

US08324123B2 Glass plate, process for producing it, and process for producing TFT panel 有权
标题翻译：玻璃板，其制造方法以及TFT面板的制造方法
公开(公告)号：US08324123B2
公开(公告)日：2012-12-04
申请号：US12693482
申请日：2010-01-26
申请人： Yuya Shimada , Manabu Nishizawa , Junichiro Kase
发明人： Yuya Shimada , Manabu Nishizawa , Junichiro Kase
IPC分类号： C03C3/085 , C03C3/087 , C03B18/02
CPC分类号： C03C3/087 , C03C3/091 , G02F2001/133302 , G02F2201/54 , G02F2202/09
摘要： To provide a glass plate which has a low B2O3 content and which can be used as a glass plate for e.g. an LCD panel.A glass plate which comprises, as a glass matrix composition as represented by mass % based on oxide, from 53 to 74 mass % of SiO2, from 15 to 23 mass % of Al2O3, from 0 to 3 mass % of B2O3, from 2 to 17 mass % of MgO, from 0 to 12 mass % of CaO, from 0 to 6 mass % of SrO, from 6 to 28 mass % of MgO+CaO+SrO, from 0 to 9 mass % of Na2O, from 0 to 6 mass % of K2O and from 0.8 to 11 mass % of Na2O+K2O, contains from 100 to 500 ppm of SO3, has an average coefficient of thermal expansion from 50 to 350° C. of at most 60×10−7/° C., and has a strain point of at least 600° C.
摘要翻译：提供具有低B 2 O 3含量的玻璃板，并可用作例如玻璃板的玻璃板。一个液晶面板。玻璃板，其以基于氧化物的质量％表示的玻璃基质组合物，53〜74质量％的SiO 2，15〜23质量％的Al 2 O 3，0〜3质量％的B 2 O 3，2〜 0〜12质量％的MgO，0〜6质量％的SrO，6〜28质量％的MgO + CaO + SrO，0〜9质量％的Na 2 O，0〜6 K 2 O的质量％和Na 2 O + K 2 O的0.8〜11质量％含有100〜500ppm的SO 3，平均热膨胀系数为50〜350℃，为60×10 -7 /℃以下并具有至少600℃的应变点。

87. 发明申请

US20100213466A1 PHOTOSENSORS INCLUDING SEMICONDUCTOR-ON-INSULATOR STRUCTURE 审中-公开
标题翻译：包括半导体绝缘体结构的光电传感器
公开(公告)号：US20100213466A1
公开(公告)日：2010-08-26
申请号：US12393292
申请日：2009-02-26
申请人： Karl D. Hirschman , Robert Manley , Carlo Anthony Kosik Williams
发明人： Karl D. Hirschman , Robert Manley , Carlo Anthony Kosik Williams
IPC分类号： H01L33/00 , H01L31/0352 , H01L29/786
CPC分类号： H01L31/105 , G02F1/13338 , G02F2001/13312 , G02F2001/13324 , G02F2202/09 , G02F2202/105 , H01L21/76254 , H01L27/1214 , H01L31/03921 , H01L31/1136 , Y02E10/50
摘要： Photosensor based on SOI technology and display devices comprising the same. The photosensor can be a photodiode or a phototransistor, or a combination thereof when incorporated in a device. The photosensor exhibits a higher photoresponse than a traditional photosensor based on amorphous silicon film or polysilicon thin film technology. The present invention is useful, e.g., in making multifunctional display devices having photosensing function integrated therein.
摘要翻译：基于SOI技术的光传感器和包括该技术的显示装置。光电传感器可以是光电二极管或光电晶体管，或其结合在装置中时的组合。光传感器比基于非晶硅膜或多晶硅薄膜技术的传统光电传感器具有更高的光响应。本发明例如在制造具有光敏功能的多功能显示装置中是有用的。

88. 发明申请

US20100103356A1 SPINEL SINTERED BODY, PRODUCTION METHOD THEREOF, TRANSPARENT SUBSTRATE, AND LIQUID CRYSTAL PROJECTOR 审中-公开
标题翻译：螺旋烧结体，其生产方法，透明基板和液晶投影仪
公开(公告)号：US20100103356A1
公开(公告)日：2010-04-29
申请号：US12528766
申请日：2008-02-28
申请人： Masashi Yoshimura , Takenori Yoshikane , Shigeru Nakayama , Akihito Fujii
发明人： Masashi Yoshimura , Takenori Yoshikane , Shigeru Nakayama , Akihito Fujii
IPC分类号： G02F1/1333 , C04B35/053
CPC分类号： C04B35/443 , C04B35/6455 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2111/805 , C04B2235/3201 , C04B2235/3208 , C04B2235/3272 , C04B2235/3418 , C04B2235/6581 , C04B2235/661 , C04B2235/72 , C04B2235/77 , C04B2235/79 , C04B2235/9653 , G02B1/02 , G02F2001/133311 , G02F2201/50 , G02F2202/09 , G02F2203/01 , G02F2203/06 , G03B21/005 , C04B41/4529 , C04B41/5027 , C04B41/5055
摘要： A spinel sintered body has a composition of MgO·nAl2O3 (1.05≦n≦1.30) containing 20 ppm or less of Si element. A production method thereof includes the steps of: forming a compacted body from a spinel powder containing 50 ppm or less of Si element and having a purity of not less than 99.5 mass %; a first sintering step of forming a sintered body having a density of not less than 95% by sintering the compacted body at 1500° C. to 1700° C. in a vacuum; and a second sintering step of subjecting the sintered body to pressurized sintering at 1600° C. to 1800° C.
摘要翻译：尖晶石烧结体具有含有20ppm以下的Si元素的MgO·nAl 2 O 3（1.05＆nlE; n＆nlE; 1.30）的组成。其制造方法包括以下步骤：由含有50ppm以下Si元素，纯度为99.5质量％以上的尖晶石粉末形成压实体; 通过在真空中在1500℃〜1700℃下烧结压实体，形成密度不低于95％的烧结体的第一烧结步骤; 以及第二烧结步骤，使烧结体在1600℃至1800℃下进行加压烧结。

89. 发明申请

US20080309886A1 Controllable Light Monitor Element and Device For Use 审中-公开
标题翻译：可控光监控元件和设备使用
公开(公告)号：US20080309886A1
公开(公告)日：2008-12-18
申请号：US12091879
申请日：2006-10-27
申请人： Uwe Prochnow
发明人： Uwe Prochnow
IPC分类号： G02F1/01 , G02B26/08 , G03B21/14
CPC分类号： H04N9/3129 , G02F1/0121 , G02F1/0126 , G02F1/0147 , G02F2202/09
摘要： The invention relates to a controllable light modulator (M) whose transmission can be controlled by the intensity of electric fields, wherein it is exposed to an intensity-controlled microwave field. Furthermore a device for laser projection is illustrated which is controlled by a light modulator of this kind.
摘要翻译：本发明涉及一种可控制光调制器（M），其可以通过电场强度来控制其传输，其中暴露于强度控制的微波场。此外，示出了由这种光调制器控制的用于激光投射的装置。

90. 发明申请

US20070281172A1 Semiconductor on insulator structure made using radiation annealing 失效
标题翻译：半导体绝缘子结构采用辐射退火制成
公开(公告)号：US20070281172A1
公开(公告)日：2007-12-06
申请号：US11726290
申请日：2007-03-21
申请人： James Gregory Couillard , Philippe Lehuede , Sophie A. Vallon
发明人： James Gregory Couillard , Philippe Lehuede , Sophie A. Vallon
IPC分类号： H01L21/00 , B32B9/04 , H01L21/324 , G21K5/00
CPC分类号： H01L21/268 , G02F2202/09 , G02F2202/104 , H01L21/302 , H01L21/324 , H01L21/3247 , H01L21/67115 , H01L21/7624 , H01L21/76254
摘要： Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.
摘要翻译：绝缘体上半导体（SOI）结构的系统和方法和产品，包括使至少一个未完成的表面进行激光退火处理。 SOI结构的制造还可以包括使施主半导体晶片的注入表面进行离子注入工艺以在施主半导体晶片中产生剥离层; 将剥离层的注入表面接合到绝缘体基板上; 将剥离层与施主半导体晶片分离，从而暴露至少一个切割表面; 以及对所述至少一个切割表面进行激光退火处理。

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