会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • ENHANCING THE EFFICIENCY OF AC-DC LOW VOLTAGE POWER SUPPLIES BY TOPOLOGICAL MODIFICATIONS
    • 通过拓扑修正提高AC-DC低压电源的效率
    • WO2006070254A3
    • 2006-08-31
    • PCT/IB2005003873
    • 2005-12-22
    • LANDIS & GYR AGLANDIS & GYR AGPAXTON-WHITE MICHAELHARRISON LEIGH
    • PAXTON-WHITE MICHAELHARRISON LEIGH
    • H02M7/06H02M7/217
    • H02M7/06H02M7/217
    • The present invention relates to improvements in or relating to power supplies, and more particularly, although not exclusively, relates to power supplies for utility meters. In order to operate a low voltage source from a mains voltage power supply, such as an electricity meter, the alternating current (AC) mains voltage must first be converted to direct current (DC). In common practice in low cost power supplies make use of a very simple arrangement of components to reduce the high ac voltage to a lower useable dc voltage. Such systems operate in a half wave rectification mode to reduce the circuit component numbers. This makes for inefficient DC voltage supplies. The present invention seeks to address a need to increase an amount of available electrical energy to operate the low voltage circuit requirements of an electricity meter without increasing the energy taken from the mains voltage. The present invention provides a power supply of which both cycles of an input alternating current are employed through the use of an inductor based circuit.
    • 本发明涉及电源的改进或涉及电源,更具体地说,虽然不是排他地涉及电力仪表的电源。 为了从诸如电表的电源电压电源操作低压源,必须首先将交流(AC)电源电压转换为直流电(DC)。 在低成本电源的通常做法中,使用非常简单的组件布置来将高交流电压降低到较低的可用直流电压。 这样的系统以半波整流模式工作,以减少电路元件数量。 这使得直流电压不足。 本发明寻求解决需要增加可用电能的量以操作电表的低压电路要求而不增加从电源电压获得的能量。 本发明提供一种通过使用基于电感器的电路来采用输入交流电流的两个周期的电源。
    • 2. 发明专利
    • OPTICALLY VARIABLE FACE PATTERN
    • JPH02165987A
    • 1990-06-26
    • JP25801289
    • 1989-10-04
    • LANDIS & GYR AG
    • GUREGOORU ANTESU
    • B41J2/465B41M3/14B42D15/10G02B5/18G03H1/30G06T1/00G09F19/14
    • PURPOSE: To facilitate discrimination of a genuine article from a false one by providing plurality of designs divided into a plurality of meshes containing optical diffraction elements having spatial frequencies in specified numbers or more. CONSTITUTION: A surface pattern has designs divided into meshes in the number of M containing optically active diffraction elements having spatial frequencies of 10/mm or more. Each mesh 6 of which the maximum dimensions are smaller than 0.3 mm is divided into pixels 7a-7f in the number of N each having a diffraction element 8 and each diffraction element 8 forms each pixel of the designs 3 in the number of N. Since a parameter of an indentation structure 9 which each of the diffraction elements 8 has is so determined as to correspond to each design, each of the designs 3 in the number of N can be recognized visually in a prescribed direction 15 of observation of the surface pattern. By the visual recognition at different angles of observation, according to this constitution, the genuineness of the pattern can be discriminated even by a novice in the case when it is irradiated normally by daylight or artificial light.
    • 3. 发明专利
    • ULTRAVIOLET PHOTOELECTRIC DETECTOR AND ITS MANUFACTURE
    • JPS6431472A
    • 1989-02-01
    • JP15136188
    • 1988-06-21
    • LANDIS & GYR AG
    • RADEIHOE POPOBITSUKU
    • H01L31/10G01J1/02H01L27/14H01L31/103H01L31/108H01L31/113
    • PURPOSE: To obtain the photoelectric detector made of a semiconductor material in a spectrum region from 200nm to 400nm having a higher sensitivity than that in a spectrum region of 400nm or over, by limiting a potential barrier of a detection region valid to detect a ray within a prescribed depth corresponding to an incident depth of a short wavelength component of a ray, with respect to at least the prescribed potential barrier formed to a substrate at a lower part of an incident window through doping. CONSTITUTION: An electrode 4 decides a level in Fermi energy. A potential of a band edge 14 above a valence electron band is decreased to a limit value Xp in existence at a depth of nearly 50nm-200nm from a Fermi energy 15, rises by a potential barrier 16 of about 0.1eV and reaches a typical value Xj of an intermediate layer 10. A detection region 17 is limited by the potential barrier 16 of the band edge 14 above the valance electron band. A short wavelength component of the ray 5 is almost completely absorbed in the detection region 17 and only a very slight part of the long wavelength component of the ray 5 is used to generate charges used for an EMK in the detection region 17. The position of the potential barrier in the interior of the photodetector is decided through the selection of a parameter in the case of ion implantation and in gradual cooling processing depending on a kind of an impurity atom, and then the spectrum sensitivity of the photoelectric detector is decided.