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    • 1. 发明申请
    • MULTISTAGE EXTREME ULTRA-VIOLET MASK QUALIFICATION
    • 多种极限超紫外线面膜鉴定
    • WO2014164894A1
    • 2014-10-09
    • PCT/US2014/023721
    • 2014-03-11
    • DINO TECHNOLOGY ACQUISITION LLC
    • PANG, Linyong
    • G06F17/50G06F1/00G03F1/84
    • G03F1/70G03F1/24G03F1/84G06T7/001G06T2207/10056G06T2207/30148
    • A technique for inspecting, qualifying and repairing photo-masks for use at extreme ultra-violet ( EUV ) wavelengths is described. In this technique, multiple images of a substrate and/or a blank that includes multiple layers deposited on the substrate are measured and compared to identify first potential defects. Using information associated with the first potential defects, such as locations of the first potential defects, another image of the EUV photo-mask that includes a mask pattern defined in an absorption layer, which is deposited on top of the multiple layers, is measured. Based on the other image and the first potential defects, second potential defects in the EUV photo-mask are identified. Next, a qualification condition of the EUV photo-mask is determined based on the first potential defects and the second potential defects.
    • 描述了用于检查,限定和修复在极紫外(EUV)波长下使用的光掩模的技术。 在该技术中,测量包括沉积在基板上的多个层的衬底和/或坯料的多个图像并进行比较以识别第一潜在缺陷。 使用与第一潜在缺陷相关联的信息,例如第一潜在缺陷的位置,测量包含沉积在多层顶部上的在吸收层中限定的掩模图案的EUV光掩模的另一图像。 基于其他图像和第一潜在缺陷,识别出EUV光掩模中的第二潜在缺陷。 接下来,基于第一潜在缺陷和第二潜在缺陷来确定EUV光掩模的限定条件。