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1. 发明授权

US11637020B2 Etching method and plasma etching apparatus 有权
公开(公告)号：US11637020B2
公开(公告)日：2023-04-25
申请号：US17398601
申请日：2021-08-10
申请人： TOKYO ELECTRON LIMITED
发明人： Koki Tanaka
IPC分类号： H01L21/311 , H01L21/3213 , H01J37/32
摘要： An etching method includes: (a) providing a substrate that contains silicon, on a support; (b) etching the substrate with plasma generated from a first gas that includes a fluorine-containing gas, to form an etching shape having a bottom; (c) generating plasma from a second gas that includes a hydrogen fluoride (HF) gas, to selectively form a condensed or solidified layer of HF at the bottom of the etching shape; and (d) etching the bottom with the plasma generated from the second gas, by supplying a bias power to the support. During (c) and (d), a temperature of the substrate is maintained to be 0° C. or lower.

2. 外观设计

USD977929S1 Binding tool 有权
公开(公告)号：USD977929S1
公开(公告)日：2023-02-14
申请号：US29786201
申请日：2021-05-28
申请人： MAX CO., LTD.
设计人： Takeo Hattori

3. 发明授权

US11557485B2 Plasma processing method and plasma processing apparatus 有权
公开(公告)号：US11557485B2
公开(公告)日：2023-01-17
申请号：US17357049
申请日：2021-06-24
申请人： TOKYO ELECTRON LIMITED
发明人： Yoshihide Kihara , Toru Hisamatsu , Kensuke Taniguchi , Yoshinari Hatazaki
IPC分类号： H01L21/306 , H01J37/32 , H01L21/3065
摘要： A plasma processing apparatus which forms a first film on a pattern formed on a substrate having dense and coarse areas, and then performs sputtering or etching on the first film.

4. 发明授权

US11557468B2 Plasma processing apparatus, temperature control method, and temperature control program 有权
公开(公告)号：US11557468B2
公开(公告)日：2023-01-17
申请号：US16191545
申请日：2018-11-15
申请人： TOKYO ELECTRON LIMITED
发明人： Shinsuke Oka
IPC分类号： H01J37/32 , H01L21/67 , H01L21/683
摘要： A heater controller controls power supplied to a heater capable of adjusting the temperature of a placement surface such that the heater reaches a set temperature. A temperature monitor measures the power supplied in the non-ignited state where the plasma is not ignited and in the transient state where the power supplied to the heater decreases after the plasma is ignited, while the power is controlled such that the temperature of the heater becomes constant. A parameter calculator calculates a heat input amount and the thermal resistance by using the power supplied in the non-ignited state and in the transient state to perform a fitting on a calculation model for calculating the power supplied in the transient state. A set temperature calculator calculates the set temperature of the heater at which the wafer reaches the target temperature, using the heat input amount and thermal resistance.

5. 发明授权

US11556853B2 Learning method, management device, and management program 有权
公开(公告)号：US11556853B2
公开(公告)日：2023-01-17
申请号：US16857384
申请日：2020-04-24
申请人： TOKYO ELECTRON LIMITED
发明人： Yuki Kataoka , Takehito Watanabe
IPC分类号： G06N20/00 , G01J3/443 , H01J37/32 , H01L21/67 , G01J3/28 , G06N3/12
摘要： There is provided a learning method. The method includes performing preprocessing on light emission data in a chamber of a plasma processing apparatus, setting a constraint for generating a regression equation representing a relationship between an etching rate of the plasma processing apparatus and the light emission data, selecting a learning target wavelength from the light emission data subjected to the preprocessing, and receiving selection of other sensor data different from the light emission data. The method further includes generating a regression equation based on the set constraint while using, as learning data, the selected wavelength, the received other sensor data, and the etching rate, and outputting the generated regression equation.

6. 发明授权

US11538669B2 Plasma processing apparatus 有权
公开(公告)号：US11538669B2
公开(公告)日：2022-12-27
申请号：US17155927
申请日：2021-01-22
申请人： TOKYO ELECTRON LIMITED
发明人： Toshifumi Ishida
IPC分类号： H01J37/32
摘要： An apparatus for a plasma processing includes an annular member, a support unit, a chamber and a pressure control unit. The annular member has a groove or a protrusion circumferentially formed on a bottom surface thereof, the groove or the protrusion having a first thread circumferentially formed on a side surface. The support unit has a protrusion or a groove circumferentially formed on a placing surface on which the annular member is placed such that the groove or the protrusion of the annular member is fitted with the protrusion or the groove of the support unit, the protrusion or the groove of the support unit having a second thread circumferentially formed on a side surface thereof. The chamber has therein the support unit. Further, the pressure control unit controls a pressure in the chamber such that a driving force for circumferentially rotating the annular member is obtained.

7. 发明授权

US11519948B2 Measuring device and method 有权
公开(公告)号：US11519948B2
公开(公告)日：2022-12-06
申请号：US16876078
申请日：2020-05-17
申请人： TOKYO ELECTRON LIMITED
发明人： Daisuke Kawano
IPC分类号： G01R27/26 , G01K13/00 , H01L21/67 , H01J37/32
摘要： A measuring device is provided. The measuring device includes a base substrate, sensor electrodes, a temperature sensor, a high frequency oscillator, C/V conversion circuits for generating voltage signals corresponding to electrostatic capacitances of the sensor electrodes, an A/D converter for converting the voltage signals to digital values, a calculation unit for calculating measurement values indicating the electrostatic capacitances based on the digital values, and phase control circuits connected between the sensor electrodes and the high-frequency oscillator. Each of the conversion circuits includes an operational amplifier, and the high-frequency oscillator is connected to a non-inverting input terminal of the amplifier and is connected to an inverting input terminal thereof through a corresponding phase control circuit. The calculation unit stores parameters for setting admittances of the phase control circuits in association with temperatures and adjusts the admittances of the phase control circuits using a parameter associated with a detected temperature.

8. 发明授权

US11515183B2 Substrate processing system 有权
公开(公告)号：US11515183B2
公开(公告)日：2022-11-29
申请号：US16984520
申请日：2020-08-04
申请人： TOKYO ELECTRON LIMITED
发明人： Suguru Motegi , Takashi Kumagai , Akira Kodashima
IPC分类号： H01L21/67 , H01L21/677
摘要： A substrate processing system includes a first chamber, a second chamber, and a cooling passage. The first chamber has therein a space for processing a substrate transferred from a first transfer chamber maintained in a vacuum atmosphere. The second chamber is disposed below the first chamber to be vertically aligned with the first chamber and configured to communicate with the first transfer chamber and a second transfer chamber maintained in an atmospheric atmosphere. The second chamber has substantially the same footprint as a footprint of the first chamber. Further, a cooling passage is disposed between the first chamber and the second chamber and configured to allow a coolant to flow therethrough.

9. 发明授权

US11495480B2 Substrate processing system 有权
公开(公告)号：US11495480B2
公开(公告)日：2022-11-08
申请号：US16999024
申请日：2020-08-20
申请人： TOKYO ELECTRON LIMITED
发明人： Suguru Motegi , Takashi Kumagai , Akira Kodashima , Keisuke Yoshimura
IPC分类号： H01L21/67 , H01J37/32
摘要： A substrate processing system installed on a floor face is provided. The substrate processing system includes a substrate transfer module, a supporting table including a top plate disposed separately from the floor face, a plurality of substrate processing modules disposed on the top plate and coupled to the substrate transfer module along a lateral side of the substrate transfer module, and a plurality of power units disposed below the top plate. Further, the plurality of power units correspond to the plurality of substrate processing modules, respectively, and each of the power units is configured to supply electric power to the corresponding processing module.

10. 发明授权

US11495468B2 Etching method and etching apparatus 有权
公开(公告)号：US11495468B2
公开(公告)日：2022-11-08
申请号：US17006500
申请日：2020-08-28
申请人： TOKYO ELECTRON LIMITED
发明人： Takahiro Yokoyama , Maju Tomura , Yoshihide Kihara , Masanobu Honda
IPC分类号： H01L21/311 , H01J37/32 , H01L21/3065
摘要： An etching method includes: preparing a compound in a processing space in which an etching target is accommodated; and etching the etching target with a mask film formed thereon, under an environment where the compound exists. The etching of the etching target includes etching the etching target under an environment where hydrogen (H) and fluorine (F) exist when the etching target contains silicon nitride (SiN), and etching the etching target under an environment where nitrogen (N), hydrogen (H), and fluorine (F) exist when the etching target contains silicon (Si). The compound includes at least one halogen element selected from a group consisting of carbon (C), chlorine (Cl), bromine (Br), and iodine (I).

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