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    • 8. 发明专利
    • 3-d nonvolatile memory
    • 3-D非易失性存储器
    • JP2006049926A
    • 2006-02-16
    • JP2005273676
    • 2005-09-21
    • Advanced Micro Devices Incアドバンスト・マイクロ・ディバイシズ・インコーポレイテッドAdvanced Micro Devices Incorporated
    • LIU YOWJUANG WHADDAD SAMEER S
    • H01L21/8247H01L27/115H01L29/788H01L29/792
    • H01L27/115H01L29/7885
    • PROBLEM TO BE SOLVED: To make it possible to manufacture a bit transistor of a smaller geometric shape without using an advanced costly lithographic tool.
      SOLUTION: The strip of a semiconductor material (e.g. P-type silicon) is oxidized, and the strip of oxide obtained as a result is removed. Then, depressions are left on the upper frontal surface of the semiconductor material having a sidewall of steep slope. There is no significant damage by ion bombardment on the sidewall of steep slope. It is because these are formed by oxidation and not by performing reactive ion etching on the semiconductor material. Therefore, a high-quality tunnel oxide can be formed on the sidewall of steep slope. Next, a floating gate 124 is formed on the tunnel oxide, and the corresponding word line is formed on the floating gate. After that, a conductive region (e.g. N-type silicon) is formed inside the bottom of the depressions. Finally, several conductive regions 150 (e.g. N-type silicon) corresponding to the floating gate are formed at the upper part of the edge of the depressions.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了使得可以制造更小几何形状的位晶体管而不使用先进的昂贵的光刻工具。 解决方案:半导体材料(例如P型硅)的条被氧化,并且结果获得的氧化物条被去除。 然后,在具有斜坡侧壁的半导体材料的上表面上留下凹陷。 陡坡边缘离子轰击没有明显的破坏。 这是因为这些是通过氧化形成的,而不是通过在半导体材料上进行反应离子蚀刻。 因此,可以在陡坡的侧壁上形成高质量的隧道氧化物。 接下来,在隧道氧化物上形成浮栅124,并且在浮栅上形成对应的字线。 之后,在凹部的底部形成有导电区域(例如N型硅)。 最后,在凹陷的边缘的上部形成对应于浮动栅极的几个导电区域150(例如N型硅)。 版权所有(C)2006,JPO&NCIPI