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1. 发明申请

WO1997009399A1 HIGH-CONCENTRATION COAL/WATER MIXTURE FUEL AND PROCESS FOR PRODUCTION THEREOF 审中-公开
标题翻译：高浓度煤/水混合燃料及其生产方法
公开(公告)号：WO1997009399A1
公开(公告)日：1997-03-13
申请号：PCT/JP1996002546
申请日：1996-09-06
申请人： CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY , ONO, Tetsuo
发明人： CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
IPC分类号： C10L01/32
CPC分类号： C10L1/326
摘要： A process for producing a high-concentration coal/water mixture fuel, whereby a coal/water mixture fuel having a good fluidity even at a high concentration is produced from a dry-pulverized fine coal at a low cost with a reduced amount of the dispersant used. The process comprises mixing a fine coal pulverized so as to have a given particle diameter distribution with water and a dispersant, while adding a hydrophilic colloid having a protective effect to the fine coal preferably before the addition of the dispersant, thus giving a high-concentration coal/water mixture fuel, such as CWM, containing the hydrophilic colloid and being reduced in the amount of the surfactant used. The amount of the hydrophilic colloid to be added is less than 1 wt.% based on the CWM as a whole and an amount exceeding the one that causes mutual coagulation between the colloid and the coal, preferably of the order of ppm or ppT. The fine coal is rounded by rubbing the coals with each other before the production of CWM, whereby the fine coal is graulated without causing an extreme reduction in the initial grain diameter and coal grains are very finely pulverized to have a desirable grain diameter distribution as the CWM.
摘要翻译：一种生产高浓度煤/水混合燃料的方法，其中甚至高浓度的具有良好流动性的煤/水混合物燃料以低成本从干粉碎的细煤产生，并减少了分散剂的量用过的。该方法包括将粉碎的细煤与水和分散剂进行混合，同时在加入分散剂之前，优先加入具有保护作用的亲水胶体，然后加入分散剂，从而得到高浓度煤/水混合燃料，如含有亲水胶体的CWM，并减少表面活性剂的用量。亲水胶体的添加量相对于CWM为整体而小于1重量％，超过使胶体与煤之间相互凝结的量优选为ppm或ppT。在生产CWM之前，细煤通过相互摩擦将其倒圆，由此细煤不会引起初始粒径的极大降低而被磨细，并且煤粒被非常精细地粉碎以具有期望的粒径分布，因为 CWM。

2. 发明申请

WO2004076050A2 METHOD AND APPARATUS FOR PRODUCING FINE PARTICLES 审中-公开
标题翻译：生产细颗粒的方法和装置
公开(公告)号：WO2004076050A2
公开(公告)日：2004-09-10
申请号：PCT/JP2004/002501
申请日：2004-03-01
申请人： CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY , FURUYA, Masahiro
发明人： FURUYA, Masahiro
IPC分类号： B01J
CPC分类号： B01J2/06 , B22F9/08
摘要： The present invention provides a method and apparatus for producing fine particles. According to the production method, a molten material 1 which has been formed by melting a raw material to be formed into fine particles is supplied in the form of droplets 1a or a jet flow to a liquid coolant 3, and a vapor film formed so as to cover the molten material supplied to the liquid coolant 3 is forcedly broken to promote vapor explosion, thereby forming and cooling fine particles for solidification. The production method and apparatus can readily produce fine particles from a raw material having a high melting point, and can relatively readily produce submicron fine particles; such particles are difficult to produce by mean of the previously developed technique. The method and apparatus can produce amorphous fine particles, or polycrystalline fine particles having a target particle size by regulating conditions for fine particle formation and for cooling-solidification.
摘要翻译：本发明提供一种微粒生产方法和装置。根据该制造方法，通过将待形成微粒的原料熔化形成的熔融材料1以液滴1a或喷射流的形式供给到液体冷却剂3，形成为蒸镀膜为了覆盖供给到液体冷却剂3的熔融材料，被强制破坏以促进蒸汽爆炸，由此形成和冷却用于固化的细颗粒。制造方法和装置可以容易地从具有高熔点的原料产生细颗粒，并且可以相对容易地产生亚微米细颗粒; 这样的颗粒通过以前开发的技术是难以产生的。该方法和装置可以通过调节细颗粒形成和冷却固化的条件来产生具有目标粒径的无定形细颗粒或多晶细颗粒。

3. 发明申请

WO2005022562A1 SUPERCONDUCTING FILM AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：超级薄膜及其制造方法
公开(公告)号：WO2005022562A1
公开(公告)日：2005-03-10
申请号：PCT/JP2004/012781
申请日：2004-08-27
申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY , MATSUMOTO, Kaname , MUKAIDA, Masashi , YOSHIDA, Yutaka , ICHINOSE, Ataru , HORII, Shigeru
发明人： MATSUMOTO, Kaname , MUKAIDA, Masashi , YOSHIDA, Yutaka , ICHINOSE, Ataru , HORII, Shigeru
IPC分类号： H01B12/06
CPC分类号： C23C14/02 , C23C14/028 , C23C14/087 , H01L39/2454 , H01L39/2483 , H01L39/2487 , Y10S505/816 , Y10T428/24322 , Y10T428/2457
摘要： The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film. A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles.
摘要翻译：本发明涉及一种超导膜，其具有在基板上形成有基板和超导体层的超导膜，其中，在形成超导体层的基板表面上平行于电流流动方向形成有纳米槽，二维晶体缺陷为引入到纳米槽上的超导体层中，以及制造该超导膜的方法。本发明的低成本且具有非常高的Jc的本发明的超导膜可用于诸如电缆，磁体，屏蔽，限流器，微波器件和这些制品的半成品的应用中。

4. 发明申请

WO2021152525A1 IONIC ELEMENT, METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：WO2021152525A1
公开(公告)日：2021-08-05
申请号：PCT/IB2021/050709
申请日：2021-01-29
申请人： CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY , UNIVERSITE GRENOBLE ALPES , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
发明人： SACÉPÉ, Benjamin , LIEB (SEIDEMANN), Johanna , ONO, Shimpei
IPC分类号： H01G7/02 , H01G9/028 , H01G11/56 , H01L29/861 , H01L23/29 , H01L23/31
摘要： An ionic element according to an embodiment includes an ion layer. The ion layer includes a polymer, an electrolyte, and a pair of end faces. The polymer is a base material. The electrolyte includes ions having a multiple bonding property. The ions are chemically arranged and chemically fixed in the ion layer in a region that is adjacent to at least one of the pair of end faces.

5. 发明专利

DE3026212C2 未知
公开(公告)号：DE3026212C2
公开(公告)日：1987-11-05
申请号：DE3026212
申请日：1980-07-10
申请人： DORYOKURO KAKUNENRYO KAIHATSU JIGYODAN , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY, TOKIO/TOKYO, JP
发明人： YUHARA, SHUNICHI , HASEGAWA, NARUO , NAKASUJI, TAKASHI, MITO, IBARAKI, JP , AOKI, NORICHIKA, ATSUGI, KANAGAWA, JP
IPC分类号： C21D8/00 , C21D8/10

6. 发明申请

US20200083330A1 SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME 审中-公开
公开(公告)号：US20200083330A1
公开(公告)日：2020-03-12
申请号：US16616780
申请日：2018-04-19
申请人： SHOWA DENKO K.K. , Central Research Institute of Electric Power Industry , DENSO CORPORATION
发明人： Keisuke FUKADA , Naoto ISHIBASHI , Akira BANDO , Masahiko ITO , Isaho KAMATA , Hidekazu TSUCHIDA , Kazukuni HARA , Masami NAITO , Hideyuki UEHIGASHI , Hiroaki FUJIBAYASHI , Hirofumi AOKI , Toshikazu SUGIURA , Katsumi SUZUKI
IPC分类号： H01L29/16 , C23C16/42 , C30B29/36 , H01L21/02
摘要： A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.

7. 发明申请

US20190285503A1 Gas Leakage Detection Method and Gas Leakage Detection Apparatus in Horizontally-Installed Canister 审中-公开
公开(公告)号：US20190285503A1
公开(公告)日：2019-09-19
申请号：US16351927
申请日：2019-03-13
申请人： CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
发明人： Hirofumi Takeda
IPC分类号： G01M3/00
摘要： In a canister horizontally installed and housed inside a concrete silo, at least two temperatures out of a temperature TB at a canister bottom portion to be one end portion in a lateral direction in a horizontally-installed attitude, a temperature TSB at a canister side surface lower portion located below a horizontal plane passing through a center of the canister, a temperature TT at a canister lid portion to be the other end portion in the lateral direction, and a temperature TST at a canister side surface upper portion located above the horizontal plane passing through the center of the canister are monitored, and occurrence of leakage of an inert gas inside the canister is detected when there is a change in a temperature difference between the at least two temperatures.

8. 发明授权

US10145754B2 Method and apparatus for detecting gas leakage from radioactive material sealed container 有权
公开(公告)号：US10145754B2
公开(公告)日：2018-12-04
申请号：US15292230
申请日：2016-10-13
申请人： CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
发明人： Hirofumi Takeda
IPC分类号： G21F5/10 , G01M3/00 , G21F5/12
摘要： A method for detecting gas leakage from a radioactive material sealed container includes measuring a temperature at a bottom portion of a metallic sealed container. A feeding air temperature of external air passing between the metallic sealed container and a concrete-made storage container is also measured. Presence of leakage of inactive gas is determined by comparing the temperatures or by utilizing a physical amount calculated by using the temperatures.

9. 发明授权

US09496345B2 Semiconductor structure, semiconductor device, and method for producing semiconductor structure 有权
标题翻译：半导体结构，半导体器件和半导体结构的制造方法
公开(公告)号：US09496345B2
公开(公告)日：2016-11-15
申请号：US14418897
申请日：2013-07-31
申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
发明人： Kazutoshi Kojima , Shiyang Ji , Tetsuya Miyazawa , Hidekazu Tsuchida , Koji Nakayama , Tetsuro Hemmi , Katsunori Asano
IPC分类号： H01L29/15 , H01L29/10 , H01L29/66 , H01L29/16 , C30B25/20 , C30B29/36 , H01L21/02 , H01L29/04 , H01L29/167 , H01L29/739 , H01L21/04
CPC分类号： H01L29/1608 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0259 , H01L21/02609 , H01L21/0262 , H01L21/046 , H01L29/04 , H01L29/045 , H01L29/167 , H01L29/66068 , H01L29/7393 , H01L29/7395
摘要： The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.
摘要翻译：本发明提供一种半导体结构，其至少包括具有α型晶体结构的p型碳化硅单晶层，其含有杂质浓度为1×1019 cm -3以上的铝，厚度为50μm，或更大还提供了一种制造本发明的半导体结构的方法，该方法至少包括将碳化硅源和铝源引入并外延生长的p型碳化硅单晶层的外延生长步骤在由碳化硅单体制成的基底层上具有α型晶体结构的晶体，其中外延生长步骤在1500℃至1,700℃的温度条件下进行，压力条件为5×10 3 Pa至25×10 3 Pa。

10. 发明申请

US20150214306A1 SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR STRUCTURE 有权
标题翻译：半导体结构，半导体器件及其半导体结构的制造方法
公开(公告)号：US20150214306A1
公开(公告)日：2015-07-30
申请号：US14418897
申请日：2013-07-31
申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
发明人： Kazutoshi Kojima , Shiyang Ji , Tetsuya Miyazawa , Hidekazu Tsuchida , Koji Nakayama , Tetsuro Hemmi , Katsunori Asano
IPC分类号： H01L29/16 , H01L29/04 , C30B29/36 , H01L21/02 , C30B25/20 , H01L29/167 , H01L29/739
CPC分类号： H01L29/1608 , C30B25/20 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0259 , H01L21/02609 , H01L21/0262 , H01L21/046 , H01L29/04 , H01L29/045 , H01L29/167 , H01L29/66068 , H01L29/7393 , H01L29/7395
摘要： The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.
摘要翻译：本发明提供一种半导体结构，其至少包括具有α型晶体结构的p型碳化硅单晶层，其含有杂质浓度为1×1019 cm -3以上的铝，厚度为50μm，或更大还提供了一种制造本发明的半导体结构的方法，该方法至少包括将碳化硅源和铝源引入并外延生长的p型碳化硅单晶层的外延生长步骤在由碳化硅单体制成的基底层上具有α型晶体结构的晶体，其中外延生长步骤在1500℃至1,700℃的温度条件下进行，压力条件为5×10 3 Pa至25×10 3 Pa。

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