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1. 发明申请

WO2023073102A1 METHOD, APPARATUS, STORAGE MEDIUM AND SYSTEM FOR CONTROLLING POWER CONVERTER 审中-公开
公开(公告)号：WO2023073102A1
公开(公告)日：2023-05-04
申请号：PCT/EP2022/080080
申请日：2022-10-27
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： HUANG, Xing , YANG, XiaoBo , TUCKEY, Andrew
IPC分类号： H02J7/00 , G01R31/389 , G01R31/392
摘要： A method for controlling at least one power converter is disclosed. The method includes generating at least one electrochemical impedance spectra (EIS) reference signal, the at least one EIS reference signal each having a frequency selected for EIS; superimposing the at least one EIS reference signal respectively on at least one control reference signal to produce at least one superimposed reference signal; controlling the at least one power converter respectively based on the at least one superimposed reference signal to cause respectively charging/discharging at least one battery module; acquiring at least one response signal produced respectively by the at least one battery module; and calculating at least one EIS respectively for the at least one battery module respectively based on the at least one superimposed reference signal and the at least one response signal.

2. 发明申请

WO2023072512A1 VERTICAL BREAK DISCONNECTOR 审中-公开
公开(公告)号：WO2023072512A1
公开(公告)日：2023-05-04
申请号：PCT/EP2022/076867
申请日：2022-09-27
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： CHAUHAN, Shashwat , PRAJAPATI, Chetan , JOSHI, Yogendra
IPC分类号： H01H31/28 , H01H31/02 , H01H3/46 , H01H1/20
摘要： A vertical break disconnector for electrical connection or disconnection is described. The vertical break disconnector (100) is provided with a first and second housing unit with one or more contacts for electrical current conduction. The first housing unit (102) supports an engagement mechanism to engage or disengage with the one or more contacts (208) of the first and second housing unit to electrically close or open the vertical break disconnector. The engagement mechanism includes a conducting element (112) pivotably coupled to the first housing unit (102) at a first end of the conducting element (112) over a rotating shaft (114), a rotating lever (116) mounted on the first housing unit (102), and a connecting link (122) mounted on the first end of the conducting element to couple the conducting element to the rotating lever. In operation, the rotating lever causes the conducting element to turn and twist to electrically close or open the vertical break disconnector.

3. 发明申请

WO2023057514A1 MONITORING OF A POWER DEVICE 审中-公开
公开(公告)号：WO2023057514A1
公开(公告)日：2023-04-13
申请号：PCT/EP2022/077701
申请日：2022-10-05
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： GUSTAVSSON, Niklas , LARSSON, Tommy , ABEYWICKRAMA, Nilanga , SCHIESSLING, Joachim
IPC分类号： G01M5/00 , G01R31/50 , G01M15/12 , G01M7/00 , G01M5/0066
摘要： The present disclosure relates to a method for monitoring a power device. The method comprises obtaining at least one frequency spectrum of at least one physical component of the power device, wherein the at least one frequency spectrum comprises at least one eigenfrequency of the at least one physical component of the power device; measuring, using at least one sensor, a vibroacoustic signal of the power device; and determining a signal contribution of the at least one physical component of the power device to the vibroacoustic signal based on the obtained at least one frequency spectrum. The present disclosure also relates to a respective monitoring device and a system comprising at least one sensor and a monitoring device.

4. 发明申请

WO2023025724A1 METAL ENCLOSED CIRCUIT BREAKER 审中-公开
公开(公告)号：WO2023025724A1
公开(公告)日：2023-03-02
申请号：PCT/EP2022/073333
申请日：2022-08-22
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： FURRER, Nils Henrik , WIRTH, Christph , VOSS, Robert , DHOTRE, Mahesh , RAPHAEL, Rijo-Jude
IPC分类号： H01H33/70 , H01H33/74 , H01H33/90
摘要： The invention relates to a metal enclosed circuit breaker (1) comprising a first arcing contact (2) and a second arcing contact (3), whereby the first arcing contact (2) and/or the second arcing contact (3) is axially movable along a switching axis (4), thereby forming, during a breaking operation, an arc (5) between the first arcing contact (2) and the second arcing contact (3) in an arcing volume (6), and an exhaust tube (15) arranged in extension to the first arcing contact (2) along the switching axis (4), whereby the exhaust tube (15) comprises a closed rear end (14) opposite to the first arcing contact (2) connectable to a rod (19) for actuating the first arcing contact (2), the exhaust tube (15) comprises a barrier element (20) arranged within the exhaust tube (15) defining a dead exhaust tube volume (21) between barrier ele- ment (20) and the rear end (14), and the barrier element (20) comprises a hole (22) extending through the barrier element (20).

5. 发明申请

WO2023001962A1 ON-LOAD TAP CHANGER WITH POSITIONING DEVICE AND METHOD FOR ASSEMBLING AN ON-LOAD TAP CHANGER 审中-公开
公开(公告)号：WO2023001962A1
公开(公告)日：2023-01-26
申请号：PCT/EP2022/070486
申请日：2022-07-21
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： VASILEV, Borislav , KOKEV, Todor , MIHAYLOV, Angel , LARSSON, Tommy
IPC分类号： H01H9/00 , H01H11/00
摘要： An on-load tap changer (1) comprises a static unit (2) comprising fixed contacts ( 4a-4e, 5a-5e ) for connection to taps at a transformer winding, a dynamic unit (7) comprising at least one movable contact (8, 9) for selectively contacting one of the fixed contacts ( 4a-4e, 5a-5e) during operation of the transformer, and comprises a rotational positioning device (14) for adjusting the rotational position of the dynamic unit (7) relative to the static unit (2) during at least one of assembly or disassembly of the tap changer (1).

6. 发明申请

WO2023280669A2 POWER MODULE COMPRISING A PATTERNED SINTERED CONNECTION AND METHOD FOR PRODUCING A POWER MODULE 审中-公开
公开(公告)号：WO2023280669A2
公开(公告)日：2023-01-12
申请号：PCT/EP2022/068021
申请日：2022-06-30
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： YAGHOUBI, Farhad , ZHANG, Biwei , BEYER, Harald
IPC分类号： H01L23/488 , H01L23/49 , H01L21/60 , H01L25/07
摘要： A power module (10) is provided which comprises a substrate (2), an electronic component (3) and an electrical connection (4), wherein the power module further comprises a first connection layer (5B) and a second connection layer (5C). The substrate (2) has a first metallization layer (21) and a second metallization layer (22) spatially separated from the first metallization layer (21) by a separating trench (2T). The first connection layer (5B) is formed along a vertical direction between the substrate (2) and the electronic component (3). The electronic component (3) is a semiconductor chip and is electrically and thermally connected to the first metallization layer (21) by the first connection layer (5B) being a patterned sintered connection layer which forms a sintered connection between the substrate (2) and the electronic component (3). In top view, an area (50) of the sintered connection is partly covered by a sintering material, wherein not-covered subregions (50U) are bordered by one or several outer edges (50E) of the area (50). A ratio of surfaces of the not-covered subregions (50U) to the respective area (50) of the sintered connection is between 10 % and 75 %, inclusive. The electrical connection (4) is electrically connected to the electronic component (3) by the second connection layer (5C) being another patterned sintered connection layer. Moreover, a method for producing such a power module (10) is provided.

7. 发明申请

WO2022248140A1 SEMICONDUCTOR DEVICE HAVING A REDUCED CONCENTRATION OF CARBON VACANCIES AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：WO2022248140A1
公开(公告)日：2022-12-01
申请号：PCT/EP2022/061041
申请日：2022-04-26
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： ALFIERI, Giovanni , KNOLL, Lars
IPC分类号： H01L21/329 , H01L21/331 , H01L29/16 , H01L29/04 , H01L29/06 , H01L29/32 , H01L29/732 , H01L29/739 , H01L29/861 , H01L29/872
摘要： The present disclosure relates to a semiconductor device (1) comprising at least one epitaxial layer (2) made from a first semiconductor material comprising carbon and having a [0001] crystallographic axis. At least one implantation area (4) is formed at a sidewall (3a) of the epitaxial layer (2), wherein a normal direction of the sidewall (3a) is perpendicular to the [0001] crystallographic axis. At least one part of the epitaxial layer (2) has a reduced concentration of carbon vacancy (VC) with respect to the first semiconductor material of the at least one epitaxial layer (2) as-grown. The present disclosure further relates to a method for manufacturing a semiconductor device (1), wherein ions are implanted through at least one sidewall (3a) of at least one epitaxial layer (2).

8. 发明申请

WO2022248085A1 A TAP CHANGER ASSEMBLY AND A TRANSFORMER TANK ASSEMBLY 审中-公开
公开(公告)号：WO2022248085A1
公开(公告)日：2022-12-01
申请号：PCT/EP2022/051244
申请日：2022-01-20
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： BERGSTRÖM, Anton , MONTELIUS, Fredrik
IPC分类号： H01H9/00 , F16K17/16 , H01F27/14 , H01H33/55
摘要： The disclosure relates to a tap changer assembly (100) comprising a tap changer assembly housing (110) completely enclosing a tap changer volume 10 and an overflow volume (12), respectively. The tap changer assembly (100) further comprising at least a part of a tap changer (13) located in the tap changer volume (10). The tap changer volume (10) and the overflow volume (12) are connectable to each other via an overflow assembly (16). The overflow assembly (16) is such that when a pressure in the tap changer volume (10) is lower than a predetermined overflow pressure threshold, fluid communication between the tap changer volume (10) and the overflow volume (12) via the overflow assembly (16) is prevented and when the pressure in the tap changer volume (10) is equal to or higher than the predetermined overflow pressure threshold, fluid communication between the tap changer volume (10) and the overflow volume (12) via the overflow assembly (16) is enabled. The tap changer volume (10) and the overflow volume (12) are aligned along an axis (Z), wherein the tap changer assembly housing (110) has a largest internal cross-sectional area, enclosing said tap changer volume (10), orthogonal to the axis (Z). When fluid communication between said tap changer volume (10) and said overflow volume (12) via said overflow assembly (14) is enabled, an area at least 10% of said largest internal cross-sectional area between the tap changer volume (10) and the overflow volume (12) is enabled for fluid communication via said overflow assembly (14). The disclosure further relates to a transformer tank assembly (300) comprising a transformer tank (30) and the tap changer (100) assembly according to the above.

9. 发明申请

WO2022224280A1 METHOD OF CONTROLLING A POWER CONVERTER, CONVERTER ARRANGEMENT AND COMPUTER PROGRAM PRODUCT 审中-公开
公开(公告)号：WO2022224280A1
公开(公告)日：2022-10-27
申请号：PCT/IT2021/000020
申请日：2021-04-20
申请人： HITACHI ENERGY SWITZERLAND AG , UNIVERSITA' DEGLI STUDI DI GENOVA
发明人： ROSINI, Alessandro , TUCKEY, Andrew , BONFIGLIO, Andrea
IPC分类号： H02M1/32 , H02M7/797 , H02M7/537
摘要： A method of controlling a power converter (11) comprises determining a frequency control error (Ferr), an active power target (PSet), a phase angle target (Φ), a voltage control error (Verr), a reactive power target (Exc) and an output voltage target (Vd*) and controlling the power converter (11) based on the output voltage target (Vd*) and the phase angle target (Φ). The method comprises at least one of determining the active power target (PSet) independent of the frequency control error (Ferr) in case a fault signal (SF) indicating a fault is detected and in dependence on at least the frequency control error (Ferr) otherwise, determining the phase angle target (Φ) independent of the active power target (PSet) in case of a respective fault signal (SF) and in dependence on at least the active power target (PSet) otherwise, determining the reactive power target (Exc) independent of the voltage control error (Verr) in case of a respective fault signal (SF) and in dependence on at least the voltage control error (Verr) otherwise, and determining the output voltage target (Vd*) independent of the reactive power target (Exc) in case of a respective fault signal (SF) and in dependence on at least the reactive power target (Exc) otherwise.

10. 发明申请

WO2022223199A1 SEMICONDUCTOR POWER MODULE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR POWER MODULE 审中-公开
公开(公告)号：WO2022223199A1
公开(公告)日：2022-10-27
申请号：PCT/EP2022/056135
申请日：2022-03-10
申请人： HITACHI ENERGY SWITZERLAND AG
发明人： GUILLON, David , MOHN, Fabian
IPC分类号： H01L21/56 , H01L23/31 , H01L23/00
摘要： A semiconductor power module (10) for a semiconductor device comprises a leadframe or substrate (4) and a resin body that is coupled to the leadframe or substrate (4). The resin body includes at least a first resin element (1) and a second resin element (2), wherein a resin material of the first resin element (1) is different from a resin material of the second resin element (2). The resin elements (1, 2) are configured such that they are separated in part at least with respect to surface areas facing each other by means of a recess (5, 6).

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