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    • 1. 发明申请
    • CERAMIC FILTER AND REGENERATING METHOD THEREOF
    • 陶瓷过滤器及其再生方法
    • WO2008056542A1
    • 2008-05-15
    • PCT/JP2007/070774
    • 2007-10-18
    • NGK INSULATORS, LTD.ISOMURA, Manabu
    • ISOMURA, Manabu
    • B01D63/06B01D69/12B01D71/02B01D65/02
    • B01D71/024B01D63/066B01D65/02B01D67/0088B01D69/12B01D71/027B01D71/028B01D2321/32B01D2323/08
    • There is disclosed a ceramic filter formed with less membrane formation times and having a water permeation performance and a separation performance. There is also disclosed a regenerating method of the ceramic filter, capable of inexpensively regenerating the ceramic filter in a case where the filter deteriorates. A ceramic filter (10) includes a porous base member (11) formed of a ceramic porous body, a carbonaceous membrane (12) formed on the porous base member (11), and an inorganic separation membrane (e.g., a silica membrane (1)) formed on the carbonaceous membrane (12). As the inorganic separation membrane, instead of the silica membrane (1), a titania membrane, a zirconia membrane, a zeolite membrane or the like may be used. In a regenerating method of the ceramic filter (10), the deteriorated ceramic filter (10) is thermally treated to remove the carbonaceous membrane (12) and the silica membrane (1) from the porous base member (11), then the carbonaceous membrane (12) is formed on the porous base member (11), and the silica membrane (1) is formed on the carbonaceous membrane (12).
    • 公开了一种陶瓷过滤器,其具有较少的膜形成时间并且具有水渗透性能和分离性能。 还公开了一种陶瓷过滤器的再生方法,其能够在过滤器劣化的情况下廉价地再生陶瓷过滤器。 陶瓷过滤器(10)包括由陶瓷多孔体形成的多孔基底构件​​(11),形成在多孔基底构件​​(11)上的碳膜(12)和无机分离膜(例如,二氧化硅膜 ))形成在碳膜(12)上。 作为无机分离膜,代替二氧化硅膜(1),可以使用二氧化钛膜,氧化锆膜,沸石膜等。 在陶瓷过滤器(10)的再生方法中,对劣化的陶瓷过滤器(10)进行热处理以从多孔基底构件​​(11)除去碳质膜(12)和二氧化硅膜(1),然后将碳膜 (12)形成在多孔基材(11)上,在碳膜(12)上形成二氧化硅膜(1)。
    • 3. 发明申请
    • SEMICONDUCTOR LAYERED STRUCTURE AND ITS METHOD OF FORMATION, AND LIGHT EMITTING DEVICE
    • 半导体层状结构及其形成方法和发光装置
    • WO2007021017A1
    • 2007-02-22
    • PCT/JP2006/316280
    • 2006-08-14
    • NGK INSULATORS, LTD.COMMISSARIAT A L'ENERGIE ATOMIQUEHORI, YujiDAUDIN, BrunoBELLET-AMALRIC, Edith
    • HORI, YujiDAUDIN, BrunoBELLET-AMALRIC, Edith
    • H01S5/343
    • H01L33/06B82Y10/00B82Y20/00H01L21/0242H01L21/02458H01L21/02516H01L21/0254H01L21/02631H01L33/007
    • A light emitting device and its method of fabrication are provided, which have reduced constraints on the composition of a matrix region in a quantum dot structure. In formation of a quantum dot structure in a light emitting layer (5), a matrix region (an n-type conductive layer (4) and matrix layers (5m)) is formed on a growth underlying layer of AlN (an underlying layer (2) by itself or including a buffer layer (3)) whose abundance ratio of Al is higher (or whose lattice constant is smaller) than that in the matrix region by an MBE technique, thereby to realize conditions where compression stress is caused in an in-plane direction perpendicular to the direction of growth of the matrix region, and then to form island crystals (5d) by self-organization in the presence of this compression stress. The compression stress functions to inhibit an increase in lattice constant caused by the reduced abundance ratio of Al in the matrix region, i.e., to compensate for a difference in lattice constant between the island crystals and the matrix region. As a result, the compression stress functions to enlarge compositional limits for formation of the island crystals by self-organization to the Ga-rich side.
    • 提供了一种发光器件及其制造方法,其对量子点结构中的矩阵区域的组成具有减少的限制。 在发光层(5)中形成量子点结构时,在AlN的生长下层(底层(基底层)上形成矩阵区域(n型导电层(4)和矩阵层(5m))) 2)本身或包含缓冲层(3)),其通过MBE技术使Al的丰度比(或其晶格常数小)在矩阵区域中的丰度比,从而实现在 在垂直于基质区域生长方向的面内方向,然后在存在压缩应力的情况下通过自组织形成岛状晶体(5d)。 压缩应力的作用是抑制由于基质区域中的Al的丰度比降低引起的晶格常数的增加,即补偿岛状晶体与基质区域之间的晶格常数差。 结果,压缩应力的作用是通过自组织到富镓侧来扩大形成岛状晶体的组成极限。
    • 5. 发明申请
    • SURFACE ACOUSTIC WAVE CONVERTER AND ACOUSTIC WAVE FILTER USING THE SAME
    • 表面声波变换器和声波滤波器
    • WO1997017757A1
    • 1997-05-15
    • PCT/JP1996003284
    • 1996-11-08
    • NGK INSULATORS, LTD.TAKEUCHI, MasaoYAMANOUCHI, KazuhikoODAGAWA, HiroyukiTANAKA, Mitsuhiro
    • NGK INSULATORS, LTD.
    • H03H09/145
    • H03H9/14547H03H9/02716H03H9/14505H03H9/14517H03H9/14552H03H9/14594
    • A surface acoustic wave converter which is suitable for anisotropic piezoelectric substrates having the NSPUDT characteristic. The converter is provided with a converter structure having an exciting electrode structure (21) and a reflector structure (22) formed on an anisotropic piezoeletric substrate that is so cut that the substrate has an NSPUDT characteristic. The structure (21) is provided with a positive electrode (23) having a plurality of electrode fingers arranged at a pitch lambda ( lambda is the wavelength of the basic surface acoustic wave) and a negative electrode (24) having an electrode finger between the electrode fingers of the positive electrode in such a way that the center-to-center distances between the fingers is lambda /2. The reflector structure (22) has a plurality of electrode fingers so arranged that the center-to-center distances between the fingers are lambda /2. The distance Lg between the structures (21 and 22) is Lg=(2n+1) lambda /4 (n is a positive integer).
    • 一种适用于具有NSPUDT特性的各向异性压电基片的表面声波转换器。 转换器设置有具有激发电极结构(21)的转换器结构和形成在各向异性压电基板上的反射器结构(22),其被切割以使得基板具有NSPUDT特性。 结构(21)设置有正极(23),其具有以间距λ(λ表示基本表面声波的波长)排列的多个电极指,以及具有电极指的负极(24) 正极的电极指,使得手指之间的中心到中心的距离为λ/ 2。 反射器结构(22)具有多个电极指,以使得手指之间的中心到中心的距离为λ/ 2。 结构(21,22)之间的距离Lg为Lg =(2n + 1)λ/ 4(n为正整数)。
    • 7. 发明申请
    • CONDUCTIVE INSULATOR
    • 导电绝缘子
    • WO1995026560A1
    • 1995-10-05
    • PCT/JP1995000574
    • 1995-03-28
    • NGK INSULATORS, LTD.SUZUKI, YoshihiroKUTSUNA, EijiNOZAKI, HiroshiMORI, Shigeo
    • NGK INSULATORS, LTD.
    • H01B17/00
    • H01B17/16H01B17/42
    • A conductive insulator which comprises an insulator body, and a metal member fixed to the insulator body via cement having high electric resistance. The exposed surface of the insulator body is covered with a first conductive layer, while the area hidden under the cement is covered at least in part with a second conductive layer. The second conductive layer is covered with a conductive film which is softer than the second conductive layer. The second conductive layer is electrically connected to the first conductive layer. This conductive insulator has a simple construction, and is manufactured simply, the insulator being able to secure the conductivity of the cement of high electric resistance at a level of practical use thereof.
    • 一种导电绝缘体,其包括绝缘体,以及通过具有高电阻的水泥固定到绝缘体的金属构件。 绝缘体的暴露表面被第一导电层覆盖,而水泥下方的区域至少部分被第二导电层覆盖。 第二导电层被比第二导电层软的导电膜覆盖。 第二导电层电连接到第一导电层。 该导电绝缘体具有简单的结构,并且简单地制造,绝缘子能够将高电阻的水泥的导电性确保在其实际应用的水平。