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    • 3. 发明授权
    • Beam generator
    • 梁发电机
    • US09025624B2
    • 2015-05-05
    • US13545733
    • 2012-07-10
    • Dong-Gun LeeSeong-Sue KimHwan-Seok Seo
    • Dong-Gun LeeSeong-Sue KimHwan-Seok Seo
    • H01S3/30H01S3/02G03F7/20G03F1/84
    • G03F7/70025G03F1/84G03F7/70575
    • A beam generator for an aerial image generating apparatus includes a laser source for emitting a laser beam and a short wavelength beam source for generating a short wavelength beam by processing the laser beam such that the short wavelength beam is coherent with and has a wavelength shorter than that of the laser beam. A spectral unit includes a quartz plate and a spectral layer coated on a surface of the quartz plate. The spectral layer has a Brewster's angle greater than 70° with respect to the laser beam such that the short wavelength beam is reflected from the spectral unit without the laser beam, increasing the reflectivity of the shortwave beam while decreasing the reflectivity and absorptivity of the laser beam in the spectral unit.
    • 用于空间图像生成装置的光束发生器包括用于发射激光束的激光源和用于通过处理激光束来产生短波长光束的短波长光束源,使得短波长光束相干并具有比波长短的波长 激光束的。 光谱单元包括石英板和涂覆在石英板的表面上的光谱层。 光谱层相对于激光束具有大于70°的布鲁斯特角,使得短波长光束不受激光束从光谱单元反射,增加了短波束的反射率,同时降低了激光的反射率和吸收率 光束在光谱单位。
    • 7. 发明申请
    • METHOD OF MEASURING AERIAL IMAGE OF EUV MASK
    • 测量EUV掩蔽的空气影像的方法
    • US20120008123A1
    • 2012-01-12
    • US13238748
    • 2011-09-21
    • Dong-gun LEESeong-sue KIM
    • Dong-gun LEESeong-sue KIM
    • G03B27/52
    • G21K1/062B82Y10/00B82Y40/00G03F1/24G03F1/84G21K2201/061
    • An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*σ, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, σ denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.
    • 一种用于通过使用扫描仪扫描图案来测量要在半导体上形成的图案的图像的装置,该装置包括包含图案的EUV掩模,在EUV掩模的第一侧上的偏光透镜,并且适于聚焦EUV光 在EUV掩模的一部分上以与扫描仪将相对于EUV掩模的法线配置的角度相同的角度,以及检测器,布置在EUV掩模的另一侧上,并且适于感测 来自EUV掩模的EUV光,其中NAzoneplate = NAscanner / n和NAdetector = NAscanner / n *&sgr;其中NAzoneplate表示该区域透镜的NA,NAdetector表示检测器的NA,NAscanner表示扫描仪的NA, &sgr 表示扫描仪的离轴度,n表示扫描仪的缩小倍率。