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1. 发明专利

MY7300376A SEISMIC EXPLORATION 未知
公开(公告)号：MY7300376A
公开(公告)日：1973-12-31
申请号：MY7300376
申请日：1973-12-31
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： PETER EMBREE
IPC分类号： G01V1/36

2. 发明专利

MY7300359A INTEGRATED CIRCUIT FABRICATION 未知
公开(公告)号：MY7300359A
公开(公告)日：1973-12-31
申请号：MY7300359
申请日：1973-12-31
申请人： TEXAS INSTRUMENTS INCORPORATED
IPC分类号： H01L21/00 , H01L21/762 , H01L27/02
摘要： 1,186,526. Integrated circuits. TEXAS INSTRUMENTS Inc. 15 Sept., 1967 [23 Dec., 1966], No. 42212/67. Heading H1K. A method of preparing an integrated circuit comprises the steps of: (a) forming a layer 4 of insulating material, preferably silicon dioxide or silicon nitride, on a supporting body 1 of silicon; (b) depositing single crystals 7 of silicon at a plurality of nucleation sites on the layer 4; (c) depositing a second layer 8 of insulating material on the surface of the layer 4 to cover the crystals 7; (d) depositing a substrate 9 of semi-conductor material, preferably polycrystalline silicon, on the layer 8; (e) removing the supporting body 1 by etching or lapping; and (f) forming individual circuit components in each of the crystals 7. The nucleation sites may be randomly distributed on the layer 4, their density being controlled by the deposition conditions or by exposing varying areas of the underlying surface of the body 1, or may be pre-selected by imprinting a nucleating agent on the layer or by forming indentations in the layer using mechanical means or an electron beam. In one embodiment, a silicon dioxide layer 4 15,000 Š thick, is formed by vapour deposition or thermal oxidation of the body 1 and the crystals 7 are formed by reacting SiCl 4 or SiHCl 3 with hydrogen at 1000-1300‹ C., suitable impurities being introduced into the reactor if required. The crystal growth is monitored through a microscope. The body 1 is removed with amine-catechol, and circuit components are formed in the crystals by ion implantation of appropriate impurities or by etching the layer 4 and diffusing or depositing suitable material. In a second embodiment having randomly distributed crystals, the locations of the crystals are recorded by scanning the surface and storing the information received in a computer. The computer may then be used to design a mask for selectively etching the layer 4 and forming the circuit components.

3. 发明专利

MY6900309A SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME 未知
公开(公告)号：MY6900309A
公开(公告)日：1969-12-31
申请号：MY6900309
申请日：1969-12-31
申请人： TEXAS INSTRUMENTS INCORPORATED
IPC分类号： H01L23/057 , H01L23/495 , H01L23/498 , H01L27/07 , H03K3/286 , H01G1/16 , H01L27/06
摘要： 958,241. Semi-conductor devices. TEXAS INSTRUMENTS Inc. May 6, 1960 [May 6, 1959], No. 16070/60. Heading H1K. A semi-conductor body, e.g. of germanium, silicon or intermetallic alloys is attached to an insulating, e.g. ceramic base by a cement, the thermal expansion coefficient of which matches those of the ceramic and semi-conductor. The wafer is then processed and a sealed enclosure, of which the substrate forms an external wall, formed around it. In one embodiment a semiconductor wafer in ohmic contact with metal strip or silver paste electrodes 3-6 (Fig. 1), on a ceramic base 1 is stuck to the base with a thermosetting cement, containing finely-divided glass, and is subsequently formed into a junction diode combined with a centre-tapped resistor, constituted by the semi-conductor wafer itself. A metal ring 11 (Fig. 2), coated with non-conductive glaze 12, or a ceramic ring metallized on its upper surface, is mounted on a low-melting glaze ring 13 applied over electrodes 3-7 and sealed thereto by heating to soften the glaze. Metal plate 14 is subsequently welded or soldered to ring 11 in inert gas or vacuo to form a sealed housing. A multivibrator formed from a single slab of semiconductor and of the circuit configuration shown in Fig. 4, is made by the following steps. A sheet of nickel-iron-cobalt alloy is etched to the form shown in Fig. 5 with indexing holes 53, 54. The sheet is positioned by these holes, a semi-conductor wafer ohisically soldered thereto in the position shown, and the assembly attached to a ceramic base as described above. The wafer is then subjected to various processes as described in Specification 945,734, to form therein the elements of the multivibrator circuit and to interconnect them. A housing is formed about the processed wafer broadly as described with reference to Fig. 2, but using a basically rectangular ring 52. The alloy sheet is finally cut along the dotted lines to isolate the various external connections of the circuit.

4. 发明专利

MY6900303A PROCESS FOR MAKING GLASS HEADER FOR TRANSISTOR 未知
公开(公告)号：MY6900303A
公开(公告)日：1969-12-31
申请号：MY6900303
申请日：1969-12-31
申请人： TEXAS INSTRUMENTS INCORPORATED
IPC分类号： C03C27/02 , H01J5/40 , H01L23/488

5. 发明专利

MY6900301A MINIATURE SEMICONDUCTOR DEVICES AND METHODS OF PRODUCING SAME 未知
公开(公告)号：MY6900301A
公开(公告)日：1969-12-31
申请号：MY6900301
申请日：1969-12-31
申请人： TEXAS INSTRUMENTS INCORPORATED
IPC分类号： H01L21/00 , H01L21/033 , H01L21/18 , H01L21/3063 , H01L21/316 , H01L21/76 , H01L21/761 , H01L21/82 , H01L21/8222 , H01L23/29 , H01L23/522 , H01L27/06 , H01L27/07 , H01L27/08 , H01L29/00 , H01L29/8605 , H01L29/92 , H01L29/93 , H01L29/94 , H03K3/281 , H03K3/286 , H01L23/52 , H01L29/86
摘要： 945,749. Semi-conductor devices. TEXAS INSTRUMENTS Inc. Feb. 2, 1960 [Feb. 6, 1959], No. 32744/63. Divided out of 945,734. Heading H1K. The subject matter of this Specification is included in Specification 945,734 from which the present Specification is divided but the claims relate to a device comprising a semi-conductor body with three superposed regions of alternate conductivity types forming a pair of PN junctions extending to a surface of the body and there defining two enclosed areas one within the other, with an insulating oxide of a semi-conductor covering selected parts of said surface, first and second ohmic contacts secured to said surface on opposite sides of the inner PN junction and a third ohmic contact secured to the third region. Specifications 945,737, 945,738, 945,739, 945,740, 945,741, 945,742, 945,743, 945,744, 945,745, 945,746, 945,747 and 945,748 also are referred to.

6. 发明专利

MY6900288A SEMICONDUCTOR INVERTER CIRCUIT 未知
公开(公告)号：MY6900288A
公开(公告)日：1969-12-31
申请号：MY6900288
申请日：1969-12-31
申请人： TEXAS INSTRUMENTS INCORPORATED
IPC分类号： H01L27/07 , H03K19/082 , H01L27/06

7. 发明专利

MY6900286A MINIATURE SEMICONDUCTOR DEVICES 未知
公开(公告)号：MY6900286A
公开(公告)日：1969-12-31
申请号：MY6900286
申请日：1969-12-31
申请人： TEXAS INSTRUMENTS INCORPORATED
IPC分类号： H01L21/00 , H01L21/033 , H01L21/18 , H01L21/3063 , H01L21/316 , H01L21/76 , H01L21/761 , H01L21/82 , H01L21/8222 , H01L23/29 , H01L23/522 , H01L27/06 , H01L27/07 , H01L27/08 , H01L29/00 , H01L29/8605 , H01L29/92 , H01L29/93 , H01L29/94 , H03K3/281 , H03K3/286 , H01L23/52 , H01L29/86
摘要： 945,749. Semi-conductor devices. TEXAS INSTRUMENTS Inc. Feb. 2, 1960 [Feb. 6, 1959], No. 32744/63. Divided out of 945,734. Heading H1K. The subject matter of this Specification is included in Specification 945,734 from which the present Specification is divided but the claims relate to a device comprising a semi-conductor body with three superposed regions of alternate conductivity types forming a pair of PN junctions extending to a surface of the body and there defining two enclosed areas one within the other, with an insulating oxide of a semi-conductor covering selected parts of said surface, first and second ohmic contacts secured to said surface on opposite sides of the inner PN junction and a third ohmic contact secured to the third region. Specifications 945,737, 945,738, 945,739, 945,740, 945,741, 945,742, 945,743, 945,744, 945,745, 945,746, 945,747 and 945,748 also are referred to.

8. 发明专利

MY6900284A SEMICONDUCTOR DEVICES CONTAINING TWO OR MORE CIRCUIT ELEMENTS THEREIN 未知
公开(公告)号：MY6900284A
公开(公告)日：1969-12-31
申请号：MY6900284
申请日：1969-12-31
申请人： TEXAS INSTRUMENTS INCORPORATED
IPC分类号： H01L21/00 , H01L21/033 , H01L21/18 , H01L21/3063 , H01L21/316 , H01L21/76 , H01L21/761 , H01L21/82 , H01L21/8222 , H01L23/29 , H01L23/522 , H01L27/06 , H01L27/07 , H01L27/08 , H01L29/00 , H01L29/8605 , H01L29/92 , H01L29/93 , H01L29/94 , H03K3/281 , H03K3/286
摘要： 945,749. Semi-conductor devices. TEXAS INSTRUMENTS Inc. Feb. 2, 1960 [Feb. 6, 1959], No. 32744/63. Divided out of 945,734. Heading H1K. The subject matter of this Specification is included in Specification 945,734 from which the present Specification is divided but the claims relate to a device comprising a semi-conductor body with three superposed regions of alternate conductivity types forming a pair of PN junctions extending to a surface of the body and there defining two enclosed areas one within the other, with an insulating oxide of a semi-conductor covering selected parts of said surface, first and second ohmic contacts secured to said surface on opposite sides of the inner PN junction and a third ohmic contact secured to the third region. Specifications 945,737, 945,738, 945,739, 945,740, 945,741, 945,742, 945,743, 945,744, 945,745, 945,746, 945,747 and 945,748 also are referred to.

9. 发明专利

MY6900256A DIGITAL DATA HANDLING 未知
公开(公告)号：MY6900256A
公开(公告)日：1969-12-31
申请号：MY6900256
申请日：1969-12-31
申请人： TEXAS INSTRUMENTS INCORPORATED
IPC分类号： G06F3/06
摘要： 1,060,762. Electric digital-data-storage apparatus. TEXAS INSTRUMENTS Inc. April 6, 1964 [April 9, 1963], No. 14118/64. Heading G4C. A system for asynchronously transferring digital words into and out of a memory comprises means to sequentially read in data to a memory, means to produce a command after a word is read into the memory, means responsive to said command to enable the operation of read-out means whereby the read-out means has access to each word stored in the memory after it is read in, and wherein the read-out means inhibits the read-in and vice versa, and search means used to locate the digital words to be read into the memory. In the system described words are stored on magnetic tape (Fig. 1, not shown). A Start command starts the tape transport in the Search mode wherein data is transferred in parallel to a Buffer Register 6. When a word, identical to a predetermined word stored in Register 11 enters Register 6 Comparator 14 terminates the Search mode, initiates the Read mode and opens Gate G3 to transfer the word via Register 7 to Buffer Memory 8. Gate G2 is also opened to transfer the words to Register 11. Index Register A, decremented each time a word is entered in the Memory determines the address of the word, A being preset to a value equal to the number of words to be transferred. If a word is required for arithmetical operations in Unit 9 after it has been entered in Memory 8 the word is transferred to Unit 9 under the control of Index Register B which is decremented for each word read out, Register B being pre-set equal to Register A. The read-out command is produced by Controller 10. When the index Comparator 18 identifies that the Memory is full, a signal is sent out to stop the tape transport. The FULL pulse plus the 1st bit of the succeeding word set INHIBIT 36 to close gate G3. The sixteen least significant digits of said succeeding word are then transferred to Register 11 to identify the starting word on the next read-out. The INHIBIT pulse passes Delay 34 to close gate 2 after the digits are transferred. The tape having overshot the stop mark due to momentum and inertia is recycled to a point prior to its stopping point. On the next operation the search mode occurs until the word stored in Register 11 is reached and the read operation is continued. If the Index Comparator defines an EMPTY state then the tape transport is started if it was stopped or otherwise continues reading out. If Register A and B contain the same quantity then the Comparator produces an INHIBIT READ-OUT signal. The circuits preventing read-out while information is being read in, or vice versa are given in Figs. 5A, 5B (not shown). To enable read-in a clock-bit sets Flip-Flop (44) to enable AND gate (45). An Arithmetic Command Completed signal applied to gate (45) sets Flip-Flop (46) to enable AND gate (47) and remove the INHIBIT signal which otherwise enables readout. A Memory Idle command acts to set a Blocking Oscillator (48) to open gate G4 (also in Fig. 2) and also to open gate G3 via AND gate (29). The latter signal is also applied to reset Flip-Flop (44) and also via delay (49) to reset Flip-Flop (46). After an Arithmetic Operation an Arithmetic Operation Completed signal is applied to Blocking Oscillator (50) to set Flip-Flop (51) and send the ACC signal to AND gate (45). This signal is applied via DELAY (52) to AND gate (53) the DELAY allowing sufficient time to allow Flip-Flop (46) to be set by the read-in command if required. If Flip-Flop (46) produces an INHIBIT signal and the COMPARATOR does not INHIBIT READ-OUT then AND gate (53) is enabled and sets Blocking Oscillator (54) to start the arithmetic operation, the start pulse being fed back to Flip-Flop (51) to remove the ACC command.

10. 发明专利

MY6900242A BORON NITRIDE THIN FILM DEVICE AND PROCESS FOR MAKING SAME 未知
公开(公告)号：MY6900242A
公开(公告)日：1969-12-31
申请号：MY6900242
申请日：1969-12-31
申请人： TEXAS INSTRUMENTS INCORPORATED
IPC分类号： C04B41/52 , C04B41/89 , C23C8/08 , C23C16/02 , C23C16/34 , C23C28/00 , H01B1/00 , H01B3/00 , H01B3/02 , H01B11/00 , H01G4/06 , H01G4/08 , H01L49/02 , H01B
摘要： 1,083,523. Etching. TEXAS INSTRUMENTS Inc. Dec. 11, 1964 [Dec. 12, 1963], No. 4695/67. Divided out of 1,083,522. Heading B6J. Boron nitride is etched with ortho-phosphoric acid at a temperature of 295‹ C. An assembly comprising a substrate of molybdenum foil coated on each side with a boron nitride film with an interlayer of molybdenum boride, and with an outer film of gold or molybdenum is selectively etched to form a capacitor. The gold is etched with hydrochloric acid and the molybdenum with HCl-HNO 3 . An assembly comprising a plurality of assemblies as referred to above joined together can also be treated with a series of such etching steps.

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