会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • METHOD AND HEATING DEVICE FOR FORMING LARGE GRAIN SIZE SILICON MATERIAL STRUCTURE FOR PHOTOVOLTAIC DEVICES
    • 用于形成用于光伏器件的大粒度硅材料结构的方法和加热装置
    • US20090272720A1
    • 2009-11-05
    • US12433828
    • 2009-04-30
    • JIAN ZHONG YUAN
    • JIAN ZHONG YUAN
    • C03C25/68F27B14/10F27B14/14
    • F27B14/10C30B11/003C30B28/06C30B29/06F27B14/14
    • A method for forming polysilicon material for photovoltaic cells. A first silicon material characterized by a first purity level is provided. The first silicon material is subjected to a thermal process to transform the first silicon material to a molten state confined in a first spatial volume. The molten first silicon material is subjected to a directional cooling process provided in a second spatial volume for a predetermined period, removing thermal energy from a first region. A polycrystalline silicon material characterized by a second purity level and an average grain size greater than about 0.1 mm is formed from the molten first silicon material in a vicinity of the first region. One or more silicon wafers is formed from the polycrystalline silicon material. A polysilicon film material characterized by a grain size greater than about 0.1 mm is deposited overlying each of the silicon wafers.
    • 一种用于形成光伏电池的多晶硅材料的方法。 提供了以第一纯度水平为特征的第一硅材料。 对第一硅材料进行热处理,以将第一硅材料转变成限制在第一空间体积中的熔融状态。 熔融的第一硅材料经受在第二空间体积中提供的定向冷却过程达预定时间段,从第一区域去除热能。 在第一区域附近由熔融的第一硅材料形成特征在于第二纯度水平和大于约0.1mm的平均晶粒尺寸的多晶硅材料。 由多晶硅材料形成一个或多个硅晶片。 将晶粒尺寸大于约0.1mm的多晶硅膜材料沉积在每个硅晶片上。
    • 6. 发明申请
    • SILICON MATERIAL SURFACE ETCHING FOR LARGE POLYSILICON THIN FILM DEPOSITION AND STRACTURE
    • 硅多孔薄膜沉积和结晶的硅材料表面蚀刻
    • US20100126576A1
    • 2010-05-27
    • US12431734
    • 2009-04-28
    • JIAN ZHONG YUAN
    • JIAN ZHONG YUAN
    • H01L31/00H01L31/0368
    • H01L31/068H01L31/03682Y02E10/546Y02E10/547
    • A method for forming a photovoltaic cell. The method includes providing a first silicon material characterized by a resistivity less than about 0.5 ohm cm−1 and a first conductive type impurity characteristic. The first silicon material forms a first conductor layer for a photovoltaic cell. The method deposits a polysilicon film material overlying the surface region. In a specific embodiment, the polysilicon material has the first conductive type impurity characteristics and a resistivity greater than about 0.5 ohm cm−1. In a specific embodiment, the first polysilicon film material is characterized by a grain size greater than about 0.1 mm. The method forms a second conductive type impurity region having a second conductive type impurity characteristics opposite to the first conductive type impurity characteristics in a vicinity of a first surface region of the polysilicon film material. A second conductor layer overlies the second conductive type impurity region to form a photovoltaic cell.
    • 一种形成光伏电池的方法。 该方法包括提供第一硅材料,其特征在于小于约0.5欧姆cm-1的电阻率和第一导电类型杂质特性。 第一硅材料形成用于光伏电池的第一导体层。 该方法沉积覆盖表面区域的多晶硅膜材料。 在具体实施例中,多晶硅材料具有第一导电类型杂质特性和大于约0.5欧姆cm-1的电阻率。 在具体实施例中,第一多晶硅膜材料的特征在于大于约0.1mm的晶粒尺寸。 该方法形成具有与多晶硅膜材料的第一表面区域附近的第一导电类型杂质特性相反的第二导电类型杂质特性的第二导电类型杂质区。 第二导体层覆盖第二导电型杂质区,形成光电池。